FS75R07N2E4B11BOSA1 [INFINEON]

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-25;
FS75R07N2E4B11BOSA1
型号: FS75R07N2E4B11BOSA1
厂家: Infineon    Infineon
描述:

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-25

局域网 栅 功率控制 晶体管
文件: 总9页 (文件大小:945K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
技术信息ꢀ/ꢀTechnicalꢀInformation  
IGBT-模块  
IGBT-modules  
FS75R07N2E4_B11  
EconoPACK™2ꢀ模块ꢀ采用第四代沟槽栅/场终止IGBT4和第四代发射极控制二极管  
带有pressfit压接管脚和温度检测NTC  
EconoPACK™2ꢀmoduleꢀwithꢀTrench/FieldstopꢀIGBT4ꢀandꢀEmitterꢀControlledꢀ4ꢀdiodeꢀandꢀPressFITꢀ/ꢀNTC  
初步数据ꢀ/ꢀPreliminaryꢀData  
VCES = 650V  
IC nom = 75A / ICRM = 150A  
典型应用  
TypicalꢀApplications  
电机传动  
• MotorꢀDrives  
电气特性  
ElectricalꢀFeatures  
增加阻断电压至650V  
高短路能力,自限制短路电流  
• Increasedꢀblockingꢀvoltageꢀcapabilityꢀtoꢀ650V  
High Short Circuit Capability, Self Limiting Short  
CircuitꢀCurrent  
沟槽栅IGBT4  
Tvjꢀopꢀ=ꢀ150°C  
• TrenchꢀIGBTꢀ4  
• Tvjꢀopꢀ=ꢀ150°C  
机械特性  
MechanicalꢀFeatures  
集成NTC温度传感器  
铜基板  
• IntegratedꢀNTCꢀtemperatureꢀsensor  
• CopperꢀBaseꢀPlate  
PressFITꢀ压接技术  
标封装  
• PressFITꢀContactꢀTechnology  
• StandardꢀHousing  
ModuleꢀLabelꢀCode  
BarcodeꢀCodeꢀ128  
ContentꢀofꢀtheꢀCode  
ModuleꢀSerialꢀNumber  
ꢀDigit  
ꢀꢀ1ꢀ-ꢀꢀꢀ5  
ꢀꢀ6ꢀ-ꢀ11  
12ꢀ-ꢀ19  
20ꢀ-ꢀ21  
22ꢀ-ꢀ23  
ModuleꢀMaterialꢀNumber  
ProductionꢀOrderꢀNumber  
Datecodeꢀ(ProductionꢀYear)  
Datecodeꢀ(ProductionꢀWeek)  
DMXꢀ-ꢀCode  
preparedꢀby:ꢀAS  
approvedꢀby:ꢀRS  
dateꢀofꢀpublication:ꢀ2013-11-08  
revision:ꢀ2.0  
ULꢀapprovedꢀ(E83335)  
1
技术信息ꢀ/ꢀTechnicalꢀInformation  
IGBT-模块  
IGBT-modules  
FS75R07N2E4_B11  
初步数据  
PreliminaryꢀData  
IGBT,ꢀ逆变器ꢀ/ꢀIGBT,Inverter  
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues  
集电极-发射极电压  
Tvj = 25°C  
VCES  
IC nom  
ICRM  
Ptot  
650  
75  
V
A
Collector-emitterꢀvoltage  
连续集电极直流电流  
ContinuousꢀDCꢀcollectorꢀcurrent  
TC = 70°C, Tvj max = 175°C  
集电极重复峰值电流  
Repetitiveꢀpeakꢀcollectorꢀcurrent  
tP = 1 ms  
150  
250  
+/-20  
A
总功率损耗  
Totalꢀpowerꢀdissipation  
TC = 25°C, Tvj max = 175°C  
W
V
栅极-发射极峰值电压  
Gate-emitterꢀpeakꢀvoltage  
VGES  
特征值ꢀ/ꢀCharacteristicꢀValues  
min. typ. max.  
集电极-发射极饱和电压  
Collector-emitterꢀsaturationꢀvoltage  
IC = 75 A, VGE = 15 V  
IC = 75 A, VGE = 15 V  
IC = 75 A, VGE = 15 V  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
1,55 1,95  
1,70  
1,75  
V
V
V
VCE sat  
栅极阈值电压  
Gateꢀthresholdꢀvoltage  
IC = 1,20 mA, VCE = VGE, Tvj = 25°C  
VGE = -15 V ... +15 V  
VGEth  
QG  
5,0  
5,8  
0,75  
0,0  
4,60  
0,145  
6,5  
V
µC  
栅极电荷  
Gateꢀcharge  
内部栅极电阻  
Internalꢀgateꢀresistor  
Tvj = 25°C  
RGint  
Cies  
Cres  
ICES  
IGES  
td on  
输入电容  
Inputꢀcapacitance  
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V  
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V  
VCE = 650 V, VGE = 0 V, Tvj = 25°C  
VCE = 0 V, VGE = 20 V, Tvj = 25°C  
nF  
nF  
反向传输电容  
Reverseꢀtransferꢀcapacitance  
集电极-发射极截止电流  
Collector-emitterꢀcut-offꢀcurrent  
1,0 mA  
栅极-发射极漏电流  
Gate-emitterꢀleakageꢀcurrent  
400 nA  
µs  
开通延迟时间(电感负载)  
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload  
IC = 75 A, VCE = 300 V  
VGE = ±15 V  
RGon = 5,1 Ω  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
0,025  
0,025  
0,025  
µs  
µs  
上升时间(电感负载)  
Riseꢀtime,ꢀinductiveꢀload  
IC = 75 A, VCE = 300 V  
VGE = ±15 V  
RGon = 5,1 Ω  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
0,02  
0,02  
0,02  
µs  
µs  
µs  
tr  
td off  
tf  
关断延迟时间(电感负载)  
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload  
IC = 75 A, VCE = 300 V  
VGE = ±15 V  
RGoff = 5,1 Ω  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
0,21  
0,24  
0,25  
µs  
µs  
µs  
下降时间(电感负载)  
Fallꢀtime,ꢀinductiveꢀload  
IC = 75 A, VCE = 300 V  
VGE = ±15 V  
RGoff = 5,1 Ω  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
0,06  
0,07  
0,07  
µs  
µs  
µs  
开通损耗能量ꢀ(每脉冲)  
Turn-onꢀenergyꢀlossꢀperꢀpulse  
IC = 75 A, VCE = 300 V, LS = 30 nH  
VGE = ±15 V, di/dt = 4000 A/µs (Tvj = 150°C) Tvj = 125°C  
RGon = 5,1 Ω  
Tvj = 25°C  
0,385  
0,55  
0,66  
mJ  
mJ  
mJ  
Eon  
Eoff  
Tvj = 150°C  
关断损耗能量ꢀ(每脉冲)  
Turn-offꢀenergyꢀlossꢀperꢀpulse  
IC = 75 A, VCE = 300 V, LS = 30 nH  
VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C)Tvj = 125°C  
RGoff = 5,1 Ω  
Tvj = 25°C  
3,35  
3,90  
4,20  
mJ  
mJ  
mJ  
Tvj = 150°C  
短路数据  
SCꢀdata  
VGE 15 V, VCC = 360 V  
VCEmax = VCES -LsCE ·di/dt  
tP 10 µs, Tvj = 25°C  
tP 10 µs, Tvj = 150°C  
360  
290  
A
A
ISC  
结-外壳热阻  
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase  
每个ꢀIGBTꢀ/ꢀperꢀIGBT  
每个ꢀIGBTꢀ/ꢀperꢀIGBT  
RthJC  
RthCH  
Tvj op  
0,20  
0,60 K/W  
K/W  
外壳-散热器热阻  
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink  
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)  
在开关状态下温度  
Temperatureꢀunderꢀswitchingꢀconditions  
-40  
150  
°C  
preparedꢀby:ꢀAS  
approvedꢀby:ꢀRS  
dateꢀofꢀpublication:ꢀ2013-11-08  
revision:ꢀ2.0  
2
技术信息ꢀ/ꢀTechnicalꢀInformation  
IGBT-模块  
IGBT-modules  
FS75R07N2E4_B11  
初步数据  
PreliminaryꢀData  
二极管,逆变器ꢀ/ꢀDiode,ꢀInverter  
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues  
反向重复峰值电压  
Tvj = 25°C  
VRRM  
IF  
IFRM  
I²t  
650  
75  
V
A
A
Repetitiveꢀpeakꢀreverseꢀvoltage  
连续正向直流电流  
ContinuousꢀDCꢀforwardꢀcurrent  
正向重复峰值电流  
Repetitiveꢀpeakꢀforwardꢀcurrent  
tP = 1 ms  
150  
I2t-值  
I²tꢀ-ꢀvalue  
VR = 0 V, tP = 10 ms, Tvj = 125°C  
VR = 0 V, tP = 10 ms, Tvj = 150°C  
660  
610  
A²s  
A²s  
特征值ꢀ/ꢀCharacteristicꢀValues  
min. typ. max.  
正向电压  
Forwardꢀvoltage  
IF = 75 A, VGE = 0 V  
IF = 75 A, VGE = 0 V  
IF = 75 A, VGE = 0 V  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
1,55 1,95  
1,50  
1,45  
V
V
V
VF  
IRM  
Qr  
反向恢复峰值电流  
Peakꢀreverseꢀrecoveryꢀcurrent  
IF = 75 A, - diF/dt = 4000 A/µs (Tvj=150°C) Tvj = 25°C  
VR = 300 V  
VGE = -15 V  
100  
A
A
A
Tvj = 125°C  
Tvj = 150°C  
115  
125  
恢复电荷  
Recoveredꢀcharge  
IF = 75 A, - diF/dt = 4000 A/µs (Tvj=150°C) Tvj = 25°C  
VR = 300 V  
VGE = -15 V  
3,00  
6,00  
7,50  
µC  
µC  
µC  
Tvj = 125°C  
Tvj = 150°C  
反向恢复损耗(每脉冲)  
Reverseꢀrecoveryꢀenergy  
IF = 75 A, - diF/dt = 4000 A/µs (Tvj=150°C) Tvj = 25°C  
VR = 300 V  
VGE = -15 V  
0,95  
1,50  
1,85  
mJ  
mJ  
mJ  
Tvj = 125°C  
Tvj = 150°C  
Erec  
结-外壳热阻  
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase  
每个二极管ꢀ/ꢀperꢀdiode  
RthJC  
RthCH  
Tvj op  
0,31  
0,95 K/W  
K/W  
外壳-散热器热阻  
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink  
每个二极管ꢀ/ꢀperꢀdiode  
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)  
在开关状态下温度  
Temperatureꢀunderꢀswitchingꢀconditions  
-40  
150  
°C  
负温度系数热敏电阻ꢀ/ꢀNTC-Thermistor  
特征值ꢀ/ꢀCharacteristicꢀValues  
min. typ. max.  
额定电阻值  
Ratedꢀresistance  
TC = 25°C  
R25  
R/R  
P25  
-5  
5,00  
kΩ  
R100ꢀꢀ偏差  
DeviationꢀofꢀR100  
TC = 100°C, R100 = 493 Ω  
5
%
耗散功率  
Powerꢀdissipation  
TC = 25°C  
20,0 mW  
B-值  
B-value  
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]  
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]  
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]  
B25/50  
B25/80  
B25/100  
3375  
3411  
3433  
K
K
K
B-值  
B-value  
B-值  
B-value  
根据应用手册标定  
Specificationꢀaccordingꢀtoꢀtheꢀvalidꢀapplicationꢀnote.  
preparedꢀby:ꢀAS  
approvedꢀby:ꢀRS  
dateꢀofꢀpublication:ꢀ2013-11-08  
revision:ꢀ2.0  
3
技术信息ꢀ/ꢀTechnicalꢀInformation  
IGBT-模块  
IGBT-modules  
FS75R07N2E4_B11  
初步数据  
PreliminaryꢀData  
模块ꢀ/ꢀModule  
绝缘测试电压  
Isolationꢀtestꢀvoltage  
RMS, f = 50 Hz, t = 1 min.  
VISOL  
2,5  
Cu  
kV  
模块基板材料  
Materialꢀofꢀmoduleꢀbaseplate  
内部绝缘  
Internalꢀisolation  
基本绝缘ꢀꢀ(classꢀ1,ꢀIECꢀ61140)  
basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)  
Al2O3  
10,0  
爬电距离  
Creepageꢀdistance  
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink  
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal  
mm  
mm  
电气间隙  
Clearance  
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink  
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal  
7,5  
相对电痕指数  
Comperativeꢀtrackingꢀindex  
CTI  
> 200  
min. typ. max.  
外壳-散热器热阻  
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink  
每个模块ꢀ/ꢀperꢀmodule  
RthCH  
LsCE  
RCC'+EE'  
Tstg  
0,02  
19  
2,50  
K/W  
nH  
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀ/ꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)  
杂散电感,模块  
Strayꢀinductanceꢀmodule  
模块引线电阻,端子-芯片  
Moduleꢀleadꢀresistance,ꢀterminalsꢀ-ꢀchip  
TCꢀ=ꢀ25°C,ꢀ每个开关ꢀ/ꢀperꢀswitch  
mΩ  
储存温度  
Storageꢀtemperature  
-40  
3,00  
125 °C  
6,00 Nm  
模块安装的安装扭距  
Mountingꢀtorqueꢀforꢀmodulꢀmounting  
螺丝ꢀM5ꢀ根据相应的应用手册进行安装  
ScrewꢀM5ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote  
M
-
重量  
Weight  
G
180  
g
preparedꢀby:ꢀAS  
approvedꢀby:ꢀRS  
dateꢀofꢀpublication:ꢀ2013-11-08  
revision:ꢀ2.0  
4
技术信息ꢀ/ꢀTechnicalꢀInformation  
IGBT-模块  
IGBT-modules  
FS75R07N2E4_B11  
初步数据  
PreliminaryꢀData  
输出特性ꢀIGBT,ꢀ逆变器ꢀ(典型)  
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)  
输出特性ꢀIGBT,ꢀ逆变器ꢀ(典型)  
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)  
ICꢀ=ꢀfꢀ(VCE  
ICꢀ=ꢀfꢀ(VCE  
)
)
VGEꢀ=ꢀ15ꢀV  
Tvjꢀ=ꢀ150°C  
150  
150  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
VGE = 19V  
VGE = 17V  
VGE = 15V  
VGE = 13V  
VGE = 11V  
VGE = 9V  
135  
120  
105  
90  
135  
120  
105  
90  
75  
60  
45  
30  
15  
0
75  
60  
45  
30  
15  
0
0,0  
0,5  
1,0  
1,5  
VCE [V]  
2,0  
2,5  
3,0  
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0  
VCE [V]  
传输特性ꢀIGBT,ꢀ逆变器ꢀ(典型)  
transferꢀcharacteristicꢀIGBT,Inverterꢀ(typical)  
ICꢀ=ꢀfꢀ(VGE  
开关损耗ꢀIGBT,ꢀ逆变器ꢀ(典型)  
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)  
Eonꢀ=ꢀfꢀ(IC),ꢀEoffꢀ=ꢀfꢀ(IC)  
)
VCEꢀ=ꢀ20ꢀV  
VGEꢀ=ꢀ±15ꢀV,ꢀRGonꢀ=ꢀ5.1ꢀ,ꢀRGoffꢀ=ꢀ5.1ꢀ,ꢀVCEꢀ=ꢀ300ꢀV  
150  
7,0  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
Eon, Tvj = 125°C  
6,5  
Eoff, Tvj = 125°C  
135  
120  
105  
90  
Eon, Tvj = 150°  
Eoff, Tvj = 150°C  
6,0  
5,5  
5,0  
4,5  
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
75  
60  
45  
30  
15  
0
5
6
7
8
9
10  
11  
12  
0
15 30 45 60 75 90 105 120 135 150  
VGE [V]  
IC [A]  
preparedꢀby:ꢀAS  
approvedꢀby:ꢀRS  
dateꢀofꢀpublication:ꢀ2013-11-08  
revision:ꢀ2.0  
5
技术信息ꢀ/ꢀTechnicalꢀInformation  
IGBT-模块  
IGBT-modules  
FS75R07N2E4_B11  
初步数据  
PreliminaryꢀData  
开关损耗ꢀIGBT,ꢀ逆变器ꢀ(典型)  
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)  
Eonꢀ=ꢀfꢀ(RG),ꢀEoffꢀ=ꢀfꢀ(RG)  
瞬态热阻抗ꢀIGBT,ꢀ逆变器ꢀ  
transientꢀthermalꢀimpedanceꢀIGBT,Inverterꢀ  
ZthJCꢀ=ꢀfꢀ(t)  
VGEꢀ=ꢀ±15ꢀV,ꢀICꢀ=ꢀ75ꢀA,ꢀVCEꢀ=ꢀ300ꢀV  
6,0  
1
Eon, Tvj = 125°C  
ZthJC : IGBT  
5,5  
5,0  
4,5  
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Eoff, Tvj = 125°C  
Eon, Tvj = 150°C  
Eoff, Tvj = 150°C  
0,1  
i:  
1
2
3
4
ri[K/W]: 0,036 0,198 0,192 0,174  
τi[s]:  
0,01 0,02 0,05 0,1  
0,01  
0,001  
0
5
10  
15  
20  
25  
0,01  
0,1  
t [s]  
1
10  
RG []  
反偏安全工作区ꢀIGBT,ꢀ逆变器ꢀ(RBSOA)  
reverseꢀbiasꢀsafeꢀoperatingꢀareaꢀIGBT,Inverterꢀ(RBSOA)  
ICꢀ=ꢀfꢀ(VCE  
正向偏压特性ꢀ二极管,逆变器ꢀ(典型)  
forwardꢀcharacteristicꢀofꢀDiode,ꢀInverterꢀ(typical)  
IFꢀ=ꢀfꢀ(VF)  
)
VGEꢀ=ꢀ±15ꢀV,ꢀRGoffꢀ=ꢀ5.1ꢀ,ꢀTvjꢀ=ꢀ150°C  
165  
150  
IC, Modul  
Tvj = 25°C  
IC, Chip  
Tvj = 125°C  
Tvj = 150°C  
150  
135  
120  
105  
90  
135  
120  
105  
90  
75  
60  
45  
30  
15  
0
75  
60  
45  
30  
15  
0
0
100  
200  
300  
400  
500  
600  
700  
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0  
VCE [V]  
VF [V]  
preparedꢀby:ꢀAS  
approvedꢀby:ꢀRS  
dateꢀofꢀpublication:ꢀ2013-11-08  
revision:ꢀ2.0  
6
技术信息ꢀ/ꢀTechnicalꢀInformation  
IGBT-模块  
IGBT-modules  
FS75R07N2E4_B11  
初步数据  
PreliminaryꢀData  
开关损耗ꢀ二极管,逆变器ꢀ(典型)  
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)  
Erecꢀ=ꢀfꢀ(IF)  
开关损耗ꢀ二极管,逆变器ꢀ(典型)  
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)  
Erecꢀ=ꢀfꢀ(RG)  
RGonꢀ=ꢀ5.1ꢀ,ꢀVCEꢀ=ꢀ300ꢀV  
IFꢀ=ꢀ75ꢀA,ꢀVCEꢀ=ꢀ300ꢀV  
3,0  
3,0  
Erec, Tvj = 125°C  
Erec, Tvj = 150°C  
Erec, Tvj = 125°C  
Erec, Tvj = 150°C  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
0
15 30 45 60 75 90 105 120 135 150  
IF [A]  
0
5
10 15 20 25 30 35 40 45 50  
RG []  
瞬态热阻抗ꢀ二极管,逆变器ꢀ  
transientꢀthermalꢀimpedanceꢀDiode,ꢀInverterꢀ  
ZthJCꢀ=ꢀfꢀ(t)  
负温度系数热敏电阻ꢀ温度特性  
NTC-Thermistor-temperatureꢀcharacteristicꢀ(typical)  
Rꢀ=ꢀfꢀ(T)  
1
100000  
ZthJC : Diode  
Rtyp  
10000  
1000  
100  
0,1  
i:  
1
2
3
4
ri[K/W]: 0,057 0,3135 0,304 0,2755  
τi[s]:  
0,01 0,02  
0,05 0,1  
0,01  
0,001  
0,01  
0,1  
t [s]  
1
10  
0
20  
40  
60  
80  
TC [°C]  
100 120 140 160  
preparedꢀby:ꢀAS  
approvedꢀby:ꢀRS  
dateꢀofꢀpublication:ꢀ2013-11-08  
revision:ꢀ2.0  
7
技术信息ꢀ/ꢀTechnicalꢀInformation  
IGBT-模块  
IGBT-modules  
FS75R07N2E4_B11  
初步数据  
PreliminaryꢀData  
接线图ꢀ/ꢀcircuit_diagram_headline  
J
封装尺寸ꢀ/ꢀpackageꢀoutlines  
Infineon  
preparedꢀby:ꢀAS  
approvedꢀby:ꢀRS  
dateꢀofꢀpublication:ꢀ2013-11-08  
revision:ꢀ2.0  
8
技术信息ꢀ/ꢀTechnicalꢀInformation  
IGBT-模块  
IGBT-modules  
FS75R07N2E4_B11  
初步数据  
PreliminaryꢀData  
使用条件和条款  
使用条件和条款  
产品规格书中的数据是专门为技术人员提供的,您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合  
产品规格书中所描述的产品特性是被保证的,任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外,产品和产品的特性没有任何的保证  
请注意安装及应用指南中的信息。  
如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话,请联系我们负责你的销售部门(详情查询  
www.infineon.comꢀ)。对那些特别感兴趣的问题我们将提供相应的应用手册  
由于技术需要,我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门  
如果您想将我们的产品用于航天,健康,危及生命或者生命维持等应用,请申明。  
请注意,对这类应用我们强烈建议  
-执行联合的风险和质量评估  
-得到质量协议的结论  
-ꢀ建立联合的测试和出厂产品检查,ꢀ我们可以根据测试的实际情况供货  
如果有必要,请根据实际需要将类似的说明给你的客户  
保留产品规格书的修改权  
Termsꢀ&ꢀConditionsꢀofꢀusage  
Theꢀdataꢀcontainedꢀinꢀthisꢀproductꢀdataꢀsheetꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀYouꢀandꢀyourꢀtechnicalꢀdepartmentsꢀwill  
haveꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproductꢀdataꢀwithꢀrespectꢀtoꢀsuch  
application.  
Thisꢀproductꢀdataꢀsheetꢀisꢀdescribingꢀtheꢀcharacteristicsꢀofꢀthisꢀproductꢀforꢀwhichꢀaꢀwarrantyꢀisꢀgranted.ꢀAnyꢀsuchꢀwarrantyꢀisꢀgranted  
exclusivelyꢀpursuantꢀtheꢀtermsꢀandꢀconditionsꢀofꢀtheꢀsupplyꢀagreement.ꢀThereꢀwillꢀbeꢀnoꢀguaranteeꢀofꢀanyꢀkindꢀforꢀtheꢀproductꢀandꢀits  
characteristics.ꢀTheꢀinformationꢀinꢀtheꢀvalidꢀapplication-ꢀandꢀassemblyꢀnotesꢀofꢀtheꢀmoduleꢀmustꢀbeꢀconsidered.  
Shouldꢀyouꢀrequireꢀproductꢀinformationꢀinꢀexcessꢀofꢀtheꢀdataꢀgivenꢀinꢀthisꢀproductꢀdataꢀsheetꢀorꢀwhichꢀconcernsꢀtheꢀspecificꢀapplicationꢀof  
ourꢀproduct,ꢀpleaseꢀcontactꢀtheꢀsalesꢀoffice,ꢀwhichꢀisꢀresponsibleꢀforꢀyouꢀ(ꢀseeꢀꢀwww.infineon.comꢀ).ꢀForꢀthoseꢀthatꢀareꢀspecifically  
interestedꢀweꢀmayꢀprovideꢀapplicationꢀnotes.ꢀ  
Dueꢀtoꢀtechnicalꢀrequirementsꢀourꢀproductꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestionꢀpleaseꢀcontactꢀthe  
salesꢀoffice,ꢀwhichꢀisꢀresponsibleꢀforꢀyou.  
ShouldꢀyouꢀintendꢀtoꢀuseꢀtheꢀProductꢀinꢀaviationꢀapplications,ꢀinꢀhealthꢀorꢀliveꢀendangeringꢀorꢀlifeꢀsupportꢀapplications,ꢀpleaseꢀnotify.ꢀPlease  
note,ꢀthatꢀforꢀanyꢀsuchꢀapplicationsꢀweꢀurgentlyꢀrecommend  
-ꢀtoꢀperformꢀjointꢀRiskꢀandꢀQualityꢀAssessments;  
-ꢀtheꢀconclusionꢀofꢀQualityꢀAgreements;  
-ꢀtoꢀestablishꢀjointꢀmeasuresꢀofꢀanꢀongoingꢀproductꢀsurvey,ꢀandꢀthatꢀweꢀmayꢀmakeꢀdeliveryꢀdependedꢀon  
ꢀꢀtheꢀrealizationꢀofꢀanyꢀsuchꢀmeasures.  
Ifꢀandꢀtoꢀtheꢀextentꢀnecessary,ꢀpleaseꢀforwardꢀequivalentꢀnoticesꢀtoꢀyourꢀcustomers.  
Changesꢀofꢀthisꢀproductꢀdataꢀsheetꢀareꢀreserved.  
preparedꢀby:ꢀAS  
approvedꢀby:ꢀRS  
dateꢀofꢀpublication:ꢀ2013-11-08  
revision:ꢀ2.0  
9

相关型号:

FS75R07N2E4BOSA1

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-28
INFINEON

FS75R07N2E4_B11

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-25
INFINEON

FS75R07U1E4

Insulated Gate Bipolar Transistor
INFINEON

FS75R07U1E4BPSA1

Insulated Gate Bipolar Transistor
INFINEON

FS75R07W2E3B11ABOMA1

Insulated Gate Bipolar Transistor, 95A I(C), 650V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-35
INFINEON

FS75R07W2E3_B11A

Insulated Gate Bipolar Transistor, 95A I(C), 650V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-35
INFINEON

FS75R12KE3

EconoPACK™2 1200 V, 75 A 六单元 IGBT 模块,采用第三代 IGBT 和NTC 温度检测
INFINEON

FS75R12KE3B9BDLA1

Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, MODULE-26
INFINEON

FS75R12KE3BOSA1

Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, MODULE-28
INFINEON

FS75R12KE3G

IGBT-Modules
EUPEC

FS75R12KE3G_03

IGBT-modules
EUPEC

FS75R12KE3_B9

IGBT-modules
INFINEON