FS820R08A6P2B_技术文档

HybridPACK™ꢀDriveꢀModule

FS820R08A6P2B

FinalꢀDataꢀSheet

V3.1,ꢀ2019-10-10

AutomotiveꢀHighꢀPower

FS820R08A6P2B

HybridPACK™ꢀDriveꢀModule

1ꢀꢀꢀꢀꢀFeaturesꢀ/ꢀDescription

HybridPACK™ꢀDriveꢀmoduleꢀwithꢀEDT2ꢀIGBTꢀandꢀDiode

T

V_CES= 750 V

I_C= 820 A

Typical Applications

Description

• Automotive Applications

• Hybrid Electrical Vehicles (H)EV

• Motor Drives

The HybridPACK^TMDrive is a very compact

six-pack module (750V/820A) optimized for hybrid

and electric vehicles. The power module

implements the new EDT2 IGBT generation, which

is an automotive Micro-Pattern Trench-Field-Stop

cell design optimized for electric drive train

applications. The chipset has benchmark current

density combined with short circuit ruggedness and

increased blocking voltage for reliable inverter

operation under harsh environmental conditions.

The EDT2 IGBTs also show excellent light load

power losses, which helps to improve system

efficiency over a real driving cycle. The EDT2 IGBT

was optimized for applications with switching

frequencies in the range of 10 kHz.

• Commercial Agriculture Vehicles

Electrical Features

• Blocking voltage 750V

• Low V_CEsat

• Low Switching Losses

• Low Qg and Crss

• Low Inductive Design

• T_{vj op}= 150°C

• Short-time extended Operation Temperature

T_{vj op}= 175°C

The new HybridPACK^TMDrive power module family

comes with mechanical guiding elements

supporting easy assembly processes for customers.

Furthermore, the press-fit pins for the signal

terminals avoid additional time consuming selective

solder processes, which provides cost savings on

system level and increases system reliability. The

direct cooled baseplate with PinFin structure in the

FS820R08A6P2B product best utilizes the

implemented chipset and shows superior thermal

characteristics. Due to the high clearance &

creepage distances, the module family is also well

suited for increased system working voltages and

supports modular inverter approaches.

Mechanical Features

• 4.2kV DC 1sec Insulation

• High Creepage and Clearance Distances

• Compact design

• High Power Density

• Direct Cooled PinFin Base Plate

• Guiding elements for PCB and cooler assembly

• Integrated NTC temperature sensor

• PressFIT Contact Technology

• RoHS compliant

• UL 94 V0 module frame

Product Name

Ordering Code

SP001499708

FS820R08A6P2B

Final Data Sheet

2

V3.1,ꢀꢀ2019-10-10

FS820R08A6P2B

HybridPACK™ Drive Module

2

IGBT,Inverter

2.1 Maximum Rated Values

Parameter

Conditions

Symbol

V_CES

I_CN

Value

750

Unit

V

Collector-emitter voltage

T_vj= 25°C

Implemented collector current

Continuous DC collector current

Repetitive peak collector current

Total power dissipation

820

A

T_F= 80°C, T_{vj max}= 175°C

t_P= 1 ms

I_{C nom}

I_CRM

450¹⁾

1640

714¹⁾

+/-20

A

T_F= 75°C, T_{vj max}= 175°C

P_tot

W

V

Gate-emitter peak voltage

V_GES

2.2 Characteristic Values

min. typ. max.

Collector-emitter saturation voltage

I_C= 450 A, V_GE= 15 V

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

1.10 1.35

1.15

V_{CE sat}

V

I_C= 820 A, V_GE= 15 V

T_vj= 25°C

T_vj= 175°C

1.30

1.50

Gate threshold voltage

I_C= 9.60 mA, V_CE= V_GE

T_vj= 25°C

T_vj= 175°C

4.90 5.80 6.50

4,10

V_GEth

Gate charge

V_GE= -8 V ... 15 V, V_CE= 400V

Q_G

R_Gint

C_ies

C_oes

C_res

4.40

0.7

µC

Ω

Internal gate resistor

Input capacitance

T_vj= 25°C

f = 1 MHz, V_CE= 50 V, V_GE= 0 V

80.0

1.00

0.30

nF

Output capacitance

Reverse transfer capacitance

Collector-emitter cut-off current

V_CE= 750 V, V_GE= 0 V

T_vj= 25°C

T_vj= 175°C

1.0

5

I_CES

I_GES

t_{d on}

mA

nA

Gate-emitter leakage current

V_CE= 0 V, V_GE= 20 V

T_vj= 25°C

400

Turn-on delay time, inductive load

I_C= 450 A, V_CE= 400 V

V_GE= -8 V / +15 V

R_Gon= 2.4 Ω

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

0.28

0.29

0.30

µs

Rise time, inductive load

I_C= 450 A, V_CE= 400 V

V_GE= -8 V / +15 V

R_Gon= 2.4 Ω

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

0.07

0.08

t_r

Turn-off delay time, inductive load

Fall time, inductive load

I_C= 450 A, V_CE= 400 V

V_GE= -8 V / +15 V

R_Goff= 5.1 Ω

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

0.94

1.05

t_{d off}

I_C= 450 A, V_CE= 400 V

V_GE= -8 V / +15 V

R_Goff= 5.1 Ω

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

0.04

0.05

0.06

t_f

Turn-on energy loss per pulse

I_C= 450 A, V_CE= 400 V, L_S= 20 nH

V_GE= -8 V / +15 V

R_Gon= 2.4 Ω

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

13.5

17.5

18.0

E_on

mJ

di/dt (T_vj25°C) = 5500 A/µs

di/dt (T_vj150°C) = 5000 A/µs

Turn-off energy loss per pulse

I_C= 450 A, V_CE= 400 V, L_S= 20 nH

V_GE= -8 V / +15 V

R_Goff= 5.1 Ω

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

23.5

29.0

30.0

E_off

mJ

A

dv/dt (T_vj25°C) = 3100 V/µs

dv/dt (T_vj150°C) = 2500 V/µs

SC data

V_GE≤ 15 V, V_CC= 400 V

V_CEmax= V_CES-L_sCE·di/dt

t_P≤ 6 µs, T_vj= 25°C

t_P≤ 3 µs, T_vj= 175°C

4800

3900

I_SC

Thermal resistance, junction to cooling fluid per IGBT; ∆V/∆t = 10 dm³/min, T_F= 75°C

R_thJF

0.120²⁾0.140²⁾K/W

Temperature under switching conditions

t_opcontinuous

-40

150

150³⁾

175

for 10s within a period of 30s, occurence maximum 3000

times over lifetime

T_{vj op}

°C

¹⁾Verified by characterization / design not by test.

²⁾Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.

³⁾For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.

Final Data Sheet

3

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FS820R08A6P2B

HybridPACK™ Drive Module

3

Diode, Inverter

3.1 Maximum Rated Values

Parameter

Conditions

Symbol

V_RRM

I_FN

Value

750

Unit

V

Repetitive peak reverse voltage

Implemented forward current

Continuous DC forward current

Repetitive peak forward current

I²t - value

T_vj= 25°C

820

A

I_F

450¹⁾

A

t_P= 1 ms

I_FRM

1640

A

V_R= 0 V, t_P= 10 ms, T_vj= 150°C

V_R= 0 V, t_P= 10 ms, T_vj= 175°C

19000

16000

A²s

I²t

3.2 Characteristic Values

min. typ. max.

Forward voltage

I_F= 450 A, V_GE= 0 V

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

1.45 1.65

1.30

1.25

V_F

V

I_F= 820 A, V_GE= 0 V

T_vj= 25°C

T_vj= 175°C

1.70

1.60

Peak reverse recovery current

Recovered charge

I_F= 450 A, - di_F/dt = 5000 A/µs (T_vj= 150°C) T_vj= 25°C

250

350

370

V_R= 400 V

V_GE= -8 V

T_vj= 150°C

T_vj= 175°C

I_RM

A

I_F= 450 A, - di_F/dt = 5000 A/µs (T_vj= 150°C) T_vj= 25°C

20.0

40.0

45.0

V_R= 400 V

V_GE= -8 V

T_vj= 150°C

T_vj= 175°C

Q_r

µC

mJ

Reverse recovery energy

I_F= 450 A, - di_F/dt = 5000 A/µs (T_vj= 150°C) T_vj= 25°C

7.00

13.0

15.0

V_R= 400 V

V_GE= -8 V

T_vj= 150°C

T_vj= 175°C

E_rec

R_thJF

T_{vj op}

Thermal resistance, junction to cooling fluid per diode; ∆V/∆t = 10 dm³/min, T_F= 75°C

Temperature under switching conditions t_opcontinuous

0.175²⁾0.200²⁾K/W

150³⁾

-40

150

for 10s within a period of 30s, occurence maximum 3000

times over lifetime

175

°C

4

NTC-Thermistor

min. typ. max.

Parameter

Conditions

Symbol

R₂₅

Value

Unit

kΩ

%

Rated resistance

Deviation of R100

Power dissipation

B-value

T_C= 25°C

5.00

T_C= 100°C, R₁₀₀= 493 Ω

T_C= 25°C

∆R/R

P₂₅

-5

5

20.0 mW

R₂= R₂₅exp [B_25/50(1/T₂- 1/(298,15 K))]

R₂= R₂₅exp [B_25/80(1/T₂- 1/(298,15 K))]

R₂= R₂₅exp [B_25/100(1/T₂- 1/(298,15 K))]

B_25/50

B_25/80

B_25/100

3375

3411

3433

K

B-value

Specification according to the valid application note.

¹⁾Verified by characterization / design not by test.

²⁾Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.

³⁾For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.

Final Data Sheet

4

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FS820R08A6P2B

HybridPACK™ Drive Module

5

Module

Parameter

Conditions

Symbol

V_ISOL

Value

4.2

Unit

kV

A

Isolation test voltage

RMS, f = 0 Hz, t = 1 sec

T_F= 75°C, T_Ct= 105°C

Maximum RMS module terminal current

Material of module baseplate

Internal isolation

I_tRMS

500

Cu+Ni¹⁾

2)

basic insulation (class 1, IEC 61140)

Al₂O₃

Creepage distance

terminal to heatsink

terminal to terminal

9.0

d_Creep

mm

Clearance

terminal to heatsink

terminal to terminal

4.5

d_Clear

CTI

Comperative tracking index

> 200

min. typ. max.

Pressure drop in cooling circuit

∆V/∆t = 10.0 dm³/min; T_F= 75°C

∆p

64³⁾

mbar

bar

Maximum pressure in cooling circuit

T_baseplate< 40°C

T_baseplate> 40°C

(relative pressure)

2.5

2.0

p

Stray inductance module

L_sCE

R_CC'+EE'

T_stg

8.0

nH

mΩ

°C

Module lead resistance, terminals - chip

Storage temperature

T_F= 25 °C, per switch

0.75

-40

125

Mounting torque for modul mounting

Screw M4 baseplate to heatsink

Screw EJOT Delta PCB to frame

1.80 2.00 2.20

0.45 0.50 0.55⁴⁾

M

G

Nm

g

Weight

720

¹⁾Ni plated Cu baseplate.

²⁾Improved Al₂O₃ceramic.

³⁾Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.

⁴⁾EJOT Delta PT WN 5451 30x10. Effective mounting torque according to application note AN-HPD-ASSEMBLY

Final Data Sheet

5

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FS820R08A6P2B

HybridPACK™ Drive Module

6

Characteristics Diagrams

output characteristic IGBT,Inverter (typical)

I_C= f (V_CE

output characteristic IGBT,Inverter (typical)

I_C= f (V_CE

)

V_GE= 15 V

1600

1500

1400

1300

1200

1100

1000

900

T_vj= 150°C

1600

1500

1400

1300

1200

1100

1000

900

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

V_GE= 19V

V_GE= 17V

V_GE= 15V

V_GE= 13V

V_GE= 11V

V_GE= 9V

800

700

600

500

400

300

200

100

0

0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2

0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 4,0

V_CE[V]

transfer characteristic IGBT,Inverter (typical)

switching losses IGBT,Inverter (typical)

E_on= f (I_C), E_off= f (I_C),

I_C= f (V_GE

)

V_CE= 20 V

1600

1500

1400

1300

1200

1100

1000

900

V_GE= +15 V / -8 V, R_Gon= 2.4 Ω, R_Goff= 5.1 Ω, V_CE= 400 V

70

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

E_on, T_vj= 150°C

E_off, T_vj= 150°C

E_on, T_vj= 175°C

60

50

40

30

20

10

0

E_off, T_vj= 175°C

800

700

600

500

400

300

200

100

0

5

6

7

8

9

10

11

12

0

100 200 300 400 500 600 700 800 900

V_GE[V]

I_C[A]

Final Data Sheet

6

V3.1, 2019-10-10

FS820R08A6P2B

HybridPACK™ Drive Module

switching losses IGBT,Inverter (typical)

E_on= f (R_G), E_off= f (R_G),

transient thermal impedance IGBT,Inverter

Z_thJF= f (t), cooler design according to AN-HPD-ASSEMBLY

V_GE= +15V / -8V, I_C= 450 A, V_CE= 400 V

∆V/∆t = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol

140

1

E_on, T_vj= 150°C

E_off, T_vj= 150°C

E_on, T_vj= 175°C

Z_thJF: IGBT

120

100

80

60

40

20

0

E_off, T_vj= 175°C

0,1

0,01

i:

1

2

3

4

r_i[K/W]: 0,005 0,05 0,065 0,02

τ_i[s]:

0,001 0,03 0,25 1,5

0,001

0

2

4

6

8

10 12 14 16 18 20 22 24

0,01

0,1

t [s]

1

10

R_G[Ω]

reverse bias safe operating area IGBT,Inverter (RBSOA)

I_C= f (V_CE

thermal impedance IGBT,Inverter

R_thJF= f (∆V/∆t), cooler design according to AN-HPD-Assembly

)

V_GE= +15V / -8V, R_Goff= 5,1 Ω, T_vj= 175°C

Tf = 75°C; 50% water / 50% ethylenglycol

1700

1600

1500

1400

1300

1200

1100

1000

900

0,152

R_thJF: IGBT

0,150

0,148

0,146

0,144

0,142

0,140

0,138

0,136

0,134

800

700

600

500

400

300

200

100

0

I_C, Modul

I_C, Chip

0

100

200

300

400

V_CE[V]

500

600

700

800

4

5

6

7

8

9

10

11

12

13

14

∆V/∆t [dm³/min]

Final Data Sheet

7

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FS820R08A6P2B

HybridPACK™ Drive Module

capacity characteristic IGBT,Inverter (typical)

C = f(V_CE

gate charge characteristic IGBT,Inverter (typical)

V_GE= f(Q_G)

)

V_GE= 0 V, T_vj= 25°C, f = 1MHz

V_CE= 400 V, I_C= 450 A, T_vj= 25°C

100

15

Q_G

C_ies

C_oes

C_res

12

9

10

6

3

0

1

-3

-6

-9

0,1

0

100

200

300

400

500

0

1

2

3

4

5

V_CE[V]

Q_G[µC]

maximum allowed collector-emitter voltage

V_CES= f(T_vj), verified by characterization / design not by test

forward characteristic of Diode, Inverter (typical)

I_F= f (V_F)

I_CES= 1 mA for T_vj≤ 25°C; I_CES= 30 mA for T_vj> 25°C

800

1600

V_CES

T_vj= 25°C

T_vj= 150°C

1500

T_vj= 175°C

1400

775

750

725

700

675

650

1300

1200

1100

1000

900

800

700

600

500

400

300

200

100

0

-50 -25

0

25

50

75 100 125 150 175 200

T_vj[°C]

0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2

V_F[V]

Final Data Sheet

8

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FS820R08A6P2B

HybridPACK™ Drive Module

switching losses Diode, Inverter (typical)

E_rec= f (I_F),

switching losses Diode, Inverter (typical)

E_rec= f (R_G),

R_Gon= 2.4 Ω, V_CE= 400 V

I_F= 450 A, V_CE= 400 V

22

20

18

16

14

12

10

8

E_rec, T_vj= 150°C

E_rec, T_vj= 175°C

E_rec, T_vj= 150°C

E_rec, T_vj= 175°C

20

18

16

14

12

10

8

6

4

2

0

100 200 300 400 500 600 700 800 900

I_F[A]

0

2

4

6

8

10 12 14 16 18 20 22 24

R_G[Ω]

transient thermal impedance Diode, Inverter

thermal impedance Diode, Inverter

Z_thJF= f (t), cooler design according to AN-HPD-ASSEMBLY

∆V/∆t = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol

R_thJF= f (∆V/∆t), cooler design according to AN-HPD-ASSEMBLY

Tf = 75°C; 50% water / 50% ethylenglycol

1

0,214

Z_thJC: Diode

R_thJF: Diode

0,212

0,210

0,208

0,206

0,204

0,202

0,200

0,198

0,196

0,194

0,1

0,01

i:

1

2

3

4

r_i[K/W]: 0,015 0,1 0,065 0,02

τ_i[s]:

0,001 0,03 0,25 1,5

0,001

0,01

0,1

t [s]

1

10

4

5

6

7

8

9

10

11

12

13

14

∆V/∆t [dm³/min]

Final Data Sheet

9

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FS820R08A6P2B

HybridPACK™ Drive Module

NTC-Thermistor-temperature characteristic (typical)

R = f (T)

pressure drop in cooling circuit

∆p = f (∆V/∆t), cooler design according to AN-HPD-ASSEMBLY

Tf = 75°C; 50% water / 50% ethylenglycol

100000

120

R_typ

∆p: Modul

100

80

60

40

20

0

10000

1000

100

0

20

40

60

80

T_C[°C]

100

120

140

160

4

5

6

7

8

9

10

11

12

13

14

∆V/∆t [dm³/min]

Final Data Sheet

10

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FS820R08A6P2B

HybridPACK™ Drive Module

7

Circuit diagram

P1

P2

P3

T1

T

C1

C3

C5

T2

G1

E1

G3

E3

G5

E5

T3

U

V

W

T

C2

C4

C6

T4

T5

G2

E2

G4

E4

G6

E6

T

T6

N1

N2

N3

Final Data Sheet

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FS820R08A6P2B

HybridPACK™ Drive Module

8

Package outlines

o5,3c0,15~

B

q0,6 FG

q1,2 DE

A

m

F

6x(N1-N3;P1-P3)

G

6x

q5,5c0,1

6x

14c0,2

6x

D

1c0,15

22,25c0,4

16,25

16c0,2

q0,5 DE

q1,6 BC

A

m

9,75c0,4

Y

B

N2

P2

P1

N1

N3

P3

8x

5c0,4

X

0

15,5c0,5

C2

E2 G2

C4

E4 G4

C6

E6 G6

4c0,3

+

-

0

0,2

6

T1

T3

T4

T5

T6

6,35c0,5

T2

G3E3

G1E1

G5E5

6,5c0,5

C1

C3

C5

A

82

87c0,4

90,75c0,4

98,25

82

C

U

V

W

C

1c0,15

E

3x

104,25c0,4

q5,5c0,1

14c0,2

H

3x

q0,6 H I

A

m

q1,2 DE

3x(U;V;W)

I

B

S

X-Y ( 1 : 1 )

8x

D2

D4

D3

8x

L

Y

N1

P1

N2

P2

N3

P3

q0,8 LM

q1,6 B C

9,3c0,2

D1

A

m

0

A

M

8

f 0,3 CZ

X

6x common zones

D1-D2

D2-D3

18,85

E4

E2 G2

C4

G4

G6

E6

C2

C6

dimensioned for

EJOT Delta PT

WN5451 30 x

origin axis generated by

C2;E2;G2;C4;E4;G4;C6;E6;G6

K

Z

J

D3-D4

D8-D7

R

D7-D6

D6-D5

T

51,85

59,35

T1

T3

T4

T5

T6

T2

G1 E1

G3 E3

G5 E5

67,15

69,85

74,1

82

C1

C3

C5

+

0,4

3,94

-

0,5

refers

to local CZ

C

U

V

W

D8

Areas R,S or T

D7

D6

D5

(19,75)

Drawing: D00043903_09

Z ( 1,5 : 1 )

edges

general toler

1. DIN

16742-TG4

2. DIN ISO

2768-mK

surface

DIN EN ISO

1302

DIN ISO 13715

q ** KJ

A

m

q ** BC

24x

E2

C2

G2

** Pin position

All dimensions refer to module in

delivery condition

checked with pin gauge

according to Application

Note AN-HPD_ASSEMBLY

Final Data Sheet

12

V3.1, 2019-10-10

FS820R08A6P2B

HybridPACK™ Drive Module

9

Label Codes

9.1 Module Code

Code Format

Data Matrix

Encoding

ASCII Text

Symbol Size

Standard

16x16

IEC24720 and IEC16022

Code Content

Content

Digit

1 - 5

6 - 11

12 - 19

20 - 21

22 - 23

Example (below)

71549

142846

55054991

15

Module Serial Number

Module Material Number

Production Order Number

Datecode (Production Year)

Datecode (Production Week)

30

Example

71549142846550549911530

9.2 Packing Code

Code Format

Code128

Code Set A

34 digits

Encoding

Symbol Size

Standard

IEC8859-1

Code Content

Content

Identifier

X

1T

S

9D

Q

Digit

2 - 9

12 - 19

21 - 25

28 - 31

33 - 34

Example (below)

95056609

2X0003E0

754389

1139

15

Backend Construction Number

Production Lot Number

Serial Number

Date Code

Box Quantity

Example

X950566091T2X0003E0S754389D1139Q15

Final Data Sheet

13

V3.1, 2019-10-10

FS820R08A6P2B

HybridPACK™ Drive Module

Revision History

Major changes since previous revision

Revision History

Reference

V1.2

Date

Description

2016-01-14

2016-11-24

2017-03-09

2019-10-10

Increased ICRM and minor revisions, based on FS660R08A6P2B revision 1.1

Preliminary datasheet 2.0

V2.0

V3.0

Final datasheet 3.0

V3.1

Adjustment of package outlines. Correction of typing errors.

Final Data Sheet

14

V3.1, 2019-10-10

FS820R08A6P2B

HybridPACK™ Drive Module

Terms & Conditions of usage

Edition 2018-08-01

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any

examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon

Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of

intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office

(http://www.infineon.com)

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the

nearest Infineon Technologies Office.

These components are not designed for “special applications” that demand extremely high reliability or safety such as aerospace, defense or life

support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact

your local representative at International Rectifier HiRel Products, Inc. or the Infineon support (https://www.infineon.com/support) to review

product requirements and reliability testing.

Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class

III medical devices are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they

fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Trademarks

Trademarks of Infineon Technologies AG

AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™,

DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™,

HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™,

PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™,

SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.

Other Trademarks

Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™,

µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of

DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.

FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of

Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION

FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor

Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO.,

MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave

Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun

Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.

TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited.

VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of

WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.

Last update

2011-11-11

Final Data Sheet

15

V3.1, 2019-10-10

w w w . i n f i n e o n . c o m

Published by Infineon Technologies AG


型号：	FS820R08A6P2B
厂家：	Infineon
描述：	PinFin Baseplate, Short Tabs
文件：	总16页 (文件大小：1876K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FS820R08A6P2B [INFINEON]

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