FSPJ260R3 [INFINEON]

Power Field-Effect Transistor, 55A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA;
FSPJ260R3
型号: FSPJ260R3
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 55A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

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FSPJ260R, FSPJ260F  
Data Sheet  
June 2001  
File Number 4879  
Radiation Hardened, SEGR Resistant  
N-Channel Power MOSFETs  
Features  
• 55A, 200V, r  
• UIS Rated  
Total Dose  
= 0.032  
DS(ON)  
Fairchild Star*Power™ Rad Hard  
MOSFETs have been specifically  
TM  
developed for high performance  
applications in a commercial or  
military space environment. Star*Power MOSFETs offer the  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
- Rated to 300K RAD (Si)  
system designer both extremely low r  
and Gate  
DS(ON)  
• Single Event  
Charge allowing the development of low loss Power  
Subsystems. Star*Power FETs combine this electrical  
capability with total dose radiation hardness up to 300K  
RADs while maintaining the guaranteed performance for  
Single Event Effects (SEE) which the Fairchild FS families  
have always featured.  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
V
up to 100% of Rated Breakdown and  
of 10V Off-Bias  
DS  
GS  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
The Fairchild portfolio of Star*Power FETs includes a family  
of devices in various voltage, current and package styles.  
The Star*Power family consists of Star*Power and  
- Typically Survives 2E12 if Current Limited to I  
AS  
• Photo Current  
Star*Power Gold products. Star*Power FETs are optimized  
- 17nA Per-RAD (Si)/s Typically  
for total dose and r  
performance while exhibiting SEE  
DS(ON)  
• Neutron  
capability at full rated voltage up to an LET of 37.  
Star*Power Gold FETs have been optimized for SEE and  
Gate Charge providing SEE performance to 80% of the  
rated voltage for an LET of 82 with extremely low gate  
charge characteristics.  
- Maintain Pre-RAD Specifications  
for 1E13 Neutrons/cm  
2
2
- Usable to 1E14 Neutrons/cm  
Symbol  
D
This MOSFET is an enhancement-mode silicon-gate power  
field effect transistor of the vertical DMOS (VDMOS)  
structure. It is specifically designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, power  
distribution, motor drives and relay drivers as well as other  
power control and conditioning applications. As with  
conventional MOSFETs these Radiation Hardened  
MOSFETs offer ease of voltage control, fast switching  
speeds and ability to parallel switching devices.  
G
S
Packaging  
TO-254AA  
G
S
Reliability screening is available as either TXV or Space  
equivalent of MIL-PRF-19500.  
D
Formerly available as type TA45211W.  
Ordering Information  
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Engineering Samples FSPJ260D1  
100K  
100K  
300K  
300K  
TXV  
Space  
TXV  
FSPJ260R3  
FSPJ260R4  
FSPJ260F3  
FSPJ260F4  
CAUTION: Beryllia Warning per MIL-PRF-19500  
refer to package specifications.  
Space  
©2001 Fairchild Semiconductor Corporation  
FSPJ260R, FSPJ260F Rev. A2  
FSPJ260R, FSPJ260F  
o
T
= 25 C, Unless Otherwise Specified  
Absolute Maximum Ratings  
C
FSPJ260R, FSPJ260F  
UNITS  
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
200  
200  
V
V
DS  
Drain to Gate Voltage (R  
= 20k ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
DGR  
GS  
Continuous Drain Current  
o
T
T
= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
55  
35  
A
A
A
V
C
D
o
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
C
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
200  
DM  
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
30  
±
GS  
Maximum Power Dissipation  
o
T
T
= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
192  
77  
W
W
C
T
o
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
C
T
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
Single Pulsed Avalanche Current, L = 100 H (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . I  
1.54  
110  
W/ C  
A
A
A
µ
AS  
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
55  
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
200  
SM  
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T  
-55 to 150  
300  
C
J
STG  
o
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
(Distance >0.063in (1.6mm) from Case, 10s Max)  
C
L
Weight (Typical)  
9.3 (Typical)  
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
o
T
= 25 C, Unless Otherwise Specified  
Electrical Specifications  
C
PARAMETER  
SYMBOL  
BV  
TEST CONDITIONS  
= 1mA, V = 0V  
MIN  
TYP  
MAX  
-
UNITS  
Drain to Source Breakdown Voltage  
Gate Threshold Voltage  
I
200  
-
V
V
V
V
DSS  
D
GS  
o
V
V
I
= V  
DS  
,
T
T
T
T
T
T
T
= -55 C  
-
-
5.5  
4.5  
-
GS(TH)  
GS  
= 1mA  
C
C
C
C
C
C
C
o
D
= 25 C  
2.0  
-
o
= 125 C  
1.0  
-
-
o
Zero Gate Voltage Drain Current  
Gate to Source Leakage Current  
I
V
V
= 160V,  
= 0V  
= 25 C  
-
25  
250  
100  
200  
1.87  
0.032  
0.061  
35  
140  
65  
15  
140  
60  
30  
-
A
µ
µ
DSS  
DS  
GS  
o
= 125 C  
-
-
A
o
I
V
=
30V  
±
= 25 C  
-
-
nA  
nA  
V
GSS  
GS  
o
= 125 C  
-
-
Drain to Source On-State Voltage  
Drain to Source On Resistance  
V
V
I
= 12V, I = 55A  
-
-
DS(ON)  
GS  
D
o
r
= 35A,  
T
T
= 25 C  
-
0.027  
DS(ON)12  
D
C
V
= 12V  
o
GS  
= 125 C  
-
-
-
C
Turn-On Delay Time  
Rise Time  
t
V
R
R
= 100V, I = 55A,  
-
ns  
ns  
ns  
ns  
nC  
nC  
nC  
nC  
nC  
V
d(ON)  
DD  
D
= 1.82 , V  
= 12V,  
L
GS  
t
-
-
r
= 2.35  
GS  
Turn-Off Delay Time  
Fall Time  
t
-
-
d(OFF)  
t
-
-
f
Total Gate Charge  
Gate Charge Source  
Gate Charge Drain  
Gate Charge at 20V  
Threshold Gate Charge  
Plateau Voltage  
Q
V
= 0V to 12V  
100V < V  
DD  
< 160V  
-
115  
50  
20  
195  
12  
7
g(12)  
GS  
I
= 55A  
D
Q
Q
-
gs  
-
gd  
Q
V
V
= 0V to 20V  
= 0V to 2V  
-
g(20)  
GS  
GS  
Q
-
-
g(TH)  
V
I
= 55A, V  
= 15V  
-
-
(PLATEAU)  
D
DS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
C
V
= 25V, V = 0V,  
GS  
-
6500  
1000  
30  
-
-
pF  
pF  
pF  
C/W  
ISS  
DS  
f = 1MHz  
C
C
-
-
OSS  
RSS  
-
-
o
Thermal Resistance Junction to Case  
R
-
0.65  
JC  
θ
©2001 Fairchild Semiconductor Corporation  
FSPJ260R, FSPJ260F Rev. A2  
FSPJ260R, FSPJ260F  
Source to Drain Diode Specifications  
PARAMETER  
Forward Voltage  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
1.2  
375  
-
UNITS  
V
V
I
I
= 55A  
-
-
-
-
-
SD  
SD  
Reverse Recovery Time  
Reverse Recovery Charge  
t
= 55A, dI /dt = 100A/ s  
ns  
µ
rr  
SD  
SD  
Q
4.5  
C
µ
RR  
o
T
= 25 C, Unless Otherwise Specified  
Electrical Specifications up to 300K RAD  
C
MIN  
MAX  
MIN  
300K RAD  
200  
1.5  
MAX  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
100K RAD  
UNITS  
Drain to Source Breakdown Volts (Note 3)  
BV  
V
V
V
V
V
V
= 0, I = 1mA  
200  
-
V
V
DSS  
GS  
D
Gate to Source Threshold Volts  
Gate to Body Leakage  
Zero Gate Leakage  
(Note 3)  
V
= V , I = 1mA  
DS  
2.0  
4.5  
4.5  
100  
GS(TH)  
GS  
GS  
GS  
GS  
GS  
D
(Notes 2, 3)  
(Note 3)  
I
=
30V, V  
= 0V  
-
-
-
-
100  
25  
nA  
±
GSS  
DS  
= 160V  
I
= 0, V  
DS  
50  
A
µ
DSS  
Drain to Source On-State Volts  
Drain to Source On Resistance  
NOTES:  
(Notes 1, 3)  
(Notes 1, 3)  
V
= 12V, I = 55A  
D
= 12V, I = 35A  
D
1.87  
0.032  
2.20  
0.036  
V
DS(ON)  
r
DS(ON)12  
1. Pulse test, 300 s Max.  
µ
2. Absolute value.  
3. Insitu Gamma bias must be sampled for both V  
= 12V, V  
= 0V and V  
GS  
= 0V, V  
DS  
= 80% BV  
DSS  
.
GS  
DS  
Note 4  
Single Event Effects (SEB, SEGR)  
ENVIRONMENT (NOTE 5)  
(NOTE 6)  
APPLIED  
BIAS  
(NOTE 7)  
MAXIMUM  
TYPICAL LET  
(MeV/mg/cm)  
V
GS  
(V)  
TEST  
SYMBOL  
SEESOA  
TYPICAL RANGE (µ)  
V
BIAS (V)  
DS  
Single Event Effects Safe Operating Area  
37  
37  
60  
60  
82  
82  
36  
36  
32  
32  
28  
28  
-10  
-15  
-2  
200  
160  
200  
-8  
160  
0
160  
-5  
120  
NOTES:  
4. Testing conducted at Brookhaven National Labs or Texas A&M.  
2
o
5. Fluence = 1E5 ions/cm (typical), T = 25 C.  
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au  
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).  
Unless Otherwise Specified  
Performance Curves  
2
2
LET = 37MeV/mg/cm , RANGE = 36µ  
LET = 60MeV/mg/cm , RANGE = 32µ  
LET = 82MeV/mg/cm , RANGE = 28µ  
240  
200  
160  
120  
80  
2
LET = 37 BROMINE  
2
240  
200  
160  
120  
80  
FLUENCE = 1E5 IONS/cm (TYPICAL)  
o
TEMP = 25 C  
LET = 82 GOLD  
40  
40  
LET = 60 IODINE  
0
0
0
-5  
-10  
-15  
(V)  
-20  
-25  
-30  
0
-4  
-8  
-12  
-16  
-20  
V
V
(V)  
GS  
GS  
FIGURE 2. TYPICAL SEE SIGNATURE CURVE  
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA  
©2001 Fairchild Semiconductor Corporation  
FSPJ260R, FSPJ260F Rev. A2  
FSPJ260R, FSPJ260F  
Unless Otherwise Specified  
Performance Curves  
(Continued)  
1E-3  
70  
60  
50  
40  
30  
20  
10  
0
1E-4  
1E-5  
ILM = 10A  
30A  
100A  
300A  
1E-6  
1E-7  
10  
30  
100  
300  
1000  
-50  
0
50  
100  
150  
DRAIN SUPPLY (V)  
o
T
, CASE TEMPERATURE ( C)  
C
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO  
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs  
TEMPERATURE  
LIMIT GAMMA DOT CURRENT TO I  
AS  
500  
100  
12V  
Q
G
10  
100µs  
Q
Q
GD  
GS  
1ms  
1
V
G
OPERATION IN THIS  
AREA MAY BE  
LIMITED BY r  
DS(ON)  
10ms  
0.1  
1
10  
100  
500  
V
, DRAIN TO SOURCE VOLTAGE (V)  
DS  
CHARGE  
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA  
FIGURE 6. BASIC GATE CHARGE WAVEFORM  
2.5  
200  
PULSE DURATION = 250ms, V  
GS  
= 12V, I = 35A  
D
DESCENDING ORDER  
V
V
V
V
= 14V  
= 12V  
= 10V  
= 8V  
2.0  
1.5  
1.0  
0.5  
0.0  
GS  
GS  
GS  
GS  
160  
120  
80  
40  
0
V
= 6 V  
GS  
-80  
-40  
0
40  
80  
120  
160  
0
2
4
6
8
10  
o
T , JUNCTION TEMPERATURE ( C)  
J
V
, DRAIN TO SOURCE VOLTAGE (V)  
DS  
FIGURE 7. TYPICAL NORMALIZED r  
TEMPERATURE  
vs JUNCTION  
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS  
DS(ON)  
©2001 Fairchild Semiconductor Corporation  
FSPJ260R, FSPJ260F Rev. A2  
FSPJ260R, FSPJ260F  
Unless Otherwise Specified  
Performance Curves  
(Continued)  
1
10  
0
10  
0.5  
0.2  
0.1  
0.05  
-1  
-2  
-3  
10  
10  
10  
0.02  
0.01  
SINGLE PULSE  
P
DM  
NOTES:  
t
DUTY FACTOR: D = t /t  
1
1
2
t
2
PEAK T = P  
J
x Z  
+ T  
DM  
θ
JC  
C
-5  
-4  
-3  
-2  
-1  
0
1
10  
10  
10  
10  
10  
10  
10  
t, RECTANGULAR PULSE DURATION (s)  
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE  
300  
100  
o
STARTING T = 25 C  
J
o
STARTING T = 150 C  
J
10  
IF R = 0  
= (L) (I ) / (1.3 RATED BV  
t
- V  
DD  
)
AV  
AS  
DSS  
IF R 0  
t
= (L/R) ln [(I *R) / (1.3 RATED BV  
- V ) + 1]  
DD  
AV  
AS  
DSS  
1
0.001  
0.01  
0.1  
1
10  
t
, TIME IN AVALANCHE (ms)  
AV  
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING  
Test Circuits and Waveforms  
ELECTRONIC SWITCH OPENS  
WHEN I IS REACHED  
AS  
V
DS  
L
BV  
DSS  
+
I
-
CURRENT  
TRANSFORMER  
AS  
t
P
V
DS  
I
AS  
V
DD  
VARY t TO OBTAIN  
P
+
50Ω  
REQUIRED PEAK I  
AS  
V
DD  
V
20V  
GS  
-
50V-150V  
DUT  
50Ω  
t
P
0V  
t
AV  
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT  
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS  
©2001 Fairchild Semiconductor Corporation  
FSPJ260R, FSPJ260F Rev. A2  
FSPJ260R, FSPJ260F  
Test Circuits and Waveforms (Continued)  
t
t
ON  
OFF  
t
d(OFF)  
V
DD  
t
d(ON)  
t
t
f
r
R
L
V
DS  
90%  
90%  
V
DS  
V
= 12V  
GS  
10%  
10%  
DUT  
0V  
90%  
50%  
R
GS  
50%  
V
GS  
PULSE WIDTH  
10%  
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT  
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS  
Screening Information  
Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table).  
o
T
= 25 C, Unless Otherwise Specified  
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent)  
C
PARAMETER  
Gate to Source Leakage Current  
Zero Gate Voltage Drain Current  
Drain to Source On Resistance  
Gate Threshold Voltage  
NOTES:  
SYMBOL  
TEST CONDITIONS  
30V  
MAX  
UNITS  
I
V
V
T
=
20 (Note 7)  
nA  
±
±
±
GSS  
GS  
I
= 80% Rated Value  
o
25 (Note 7)  
A
µ
DSS  
DS  
r
= 25 C at Rated I  
D
20% (Note 8)  
20% (Note 8)  
±
DS(ON)  
C
V
I
= 1.0mA  
V
±
GS(TH)  
D
8. Or 100% of Initial Reading (whichever is greater).  
9. Of Initial Reading.  
Screening Information  
TEST  
JANTXV EQUIVALENT  
JANS EQUIVALENT  
Unclamped Inductive Switching  
Thermal Response  
Gate Stress  
V
t
= 20V, L = 0.1mH; Limit = 110A  
V
t
= 20V, L = 0.1mH; Limit = 110A  
GS(PEAK)  
GS(PEAK)  
= 100ms; V = 25V; I = 4A; LIMIT = 100mV  
= 100ms; V = 25V; I = 4A; LIMIT = 100mV  
H H  
H
H
H
H
V
= 45V, t = 250 s  
V
= 45V, t = 250 s  
µ
µ
GS  
Optional  
MIL-PRF-19500 Group A,  
GS  
Required  
MIL-PRF-19500 Group A,  
Pind  
Pre Burn-In Tests (Note 9)  
o
o
Subgroup 2 (All Static Tests at 25 C)  
Subgroup 2 (All Static Tests at 25 C)  
Steady State Gate  
Bias (Gate Stress)  
MIL-PRF-750, Method 1042, Condition B  
MIL-PRF-750, Method 1042, Condition B  
V
= 80% of Rated Value,  
V
= 80% of Rated Value,  
GS  
= 150 C, Time = 48 hours  
GS  
T = 150 C, Time = 48 hours  
A
o
o
T
A
Interim Electrical Tests (Note 9)  
All Delta Parameters Listed in the Delta Tests  
and Limits Table  
All Delta Parameters Listed in the Delta Tests  
and Limits Table  
Steady State Reverse  
Bias (Drain Stress)  
MIL-PRF-750, Method 1042, Condition A  
MIL-PRF-750, Method 1042, Condition A  
V
= 80% of Rated Value,  
V
= 80% of Rated Value,  
DS  
= 150 C, Time = 160 hours  
DS  
T = 150 C, Time = 240 hours  
A
o
o
T
A
PDA  
10%  
5%  
Final Electrical Tests (Note 9)  
MIL-PRF-19500, Group A, Subgroup 2  
MIL-PRF-19500, Group A,  
Subgroups 2 and 3  
NOTE:  
10. Test limits are identical pre and post burn-in.  
Additional Tests  
PARAMETER  
Safe Operating Area  
SYMBOL  
TEST CONDITIONS  
= 160V, t = 10ms  
MAX  
0.88  
200  
UNITS  
A
SOA  
V
t
DS  
= 500ms; V =25V; I = 4A  
Thermal Impedance  
V
mV  
SD  
H
H
H
©2001 Fairchild Semiconductor Corporation  
FSPJ260R, FSPJ260F Rev. A2  
FSPJ260R, FSPJ260F  
Rad Hard Data Packages - Fairchild Power Transistors  
Class S - Equivalents  
TXV Equivalent  
1.RAD HARD TXV EQUIVALENT - STANDARD DATA  
PACKAGE  
1. RAD HARD “S” EQUIVALENT - STANDARD DATA  
PACKAGE  
A. Certificate of Compliance  
A. Certificate of Compliance  
B. Serialization Records  
C. Assembly Flow Chart  
D. SEM Photos and Report  
B. Assembly Flow Chart  
C. Preconditioning - Attributes Data Sheet  
D. Group A  
E. Group B  
F. Group C  
G. Group D  
- Attributes Data Sheet  
- Attributes Data Sheet  
- Attributes Data Sheet  
- Attributes Data Sheet  
E. Preconditioning - Attributes Data Sheet  
- HTRB - Hi Temp Gate Stress Post  
Reverse Bias Data and Delta Data  
- HTRB - Hi Temp Drain Stress Post  
Reverse Bias Delta Data  
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA  
PACKAGE  
F. Group A  
G. Group B  
H. Group C  
I. Group D  
- Attributes Data Sheet  
- Attributes Data Sheet  
- Attributes Data Sheet  
- Attributes Data Sheet  
A. Certificate of Compliance  
B. Assembly Flow Chart  
C. Preconditioning - Attributes Data Sheet  
- Pre and Post Burn-In Read and Record  
Data  
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL  
DATA PACKAGE  
D. Group A  
E. Group B  
- Attributes Data Sheet  
A. Certificate of Compliance  
B. Serialization Records  
C. Assembly Flow Chart  
D. SEM Photos and Report  
- Attributes Data Sheet  
- Pre and Post Read and Record Data for  
Intermittent Operating Life (Subgroup B3)  
- Bond Strength Data (Subgroup B3)  
- Pre and Post High Temperature Operating  
Life Read and Record Data (Subgroup B6)  
E. Preconditioning - Attributes Data Sheet  
- HTRB - Hi Temp Gate Stress Post  
Reverse Bias Data and Delta Data  
- HTRB - Hi Temp Drain Stress Post  
Reverse Bias Delta Data  
F. Group C  
G. Group D  
- Attributes Data Sheet  
- Pre and Post Read and Record Data for  
Intermittent Operating Life (Subgroup C6)  
- Bond Strength Data (Subgroup C6)  
- X-Ray and X-Ray Report  
- Attributes Data Sheet  
F. Group A  
G. Group B  
H. Group C  
I. Group D  
- Attributes Data Sheet  
- Subgroups A2, A3, A4, A5 and A7 Data  
- Pre and Post RAD Read and Record Data  
- Attributes Data Sheet  
- Subgroups B1, B3, B4, B5 and B6 Data  
- Attributes Data Sheet  
- Subgroups C1, C2, C3 and C6 Data  
- Attributes Data Sheet  
- Pre and Post Radiation Data  
©2001 Fairchild Semiconductor Corporation  
FSPJ260R, FSPJ260F Rev. A2  
FSPJ260R, FSPJ260F  
TO-254AA  
3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE  
A
INCHES  
MIN  
MILLIMETERS  
ØP  
E
SYMBOL  
MAX  
0.260  
0.050  
0.045  
0.800  
0.545  
MIN  
6.33  
MAX  
6.60  
NOTES  
A
1
A
0.249  
0.040  
0.035  
0.790  
0.535  
-
Q
A
1.02  
1.27  
-
1
H
1
Øb  
D
0.89  
1.14  
2, 3  
20.07  
13.59  
20.32  
13.84  
-
-
E
D
e
0.150 TYP  
0.300 BSC  
3.81 TYP  
7.62 BSC  
4
4
-
e
1
H
J
0.245  
0.265  
0.160  
0.560  
0.149  
0.130  
6.23  
6.73  
4.06  
1
0.140  
0.520  
0.139  
0.110  
3.56  
13.21  
3.54  
4
-
1
L
14.22  
3.78  
0.065 R MAX.  
TYP.  
ØP  
Q
-
L
Øb  
2.80  
3.30  
-
NOTES:  
1. These dimensions are within allowable dimensions of Rev. A of  
JEDEC outline TO-254AA dated 11-86.  
1
2
3
J
e
1
2. Add typically 0.002 inches (0.05mm) for solder coating.  
3. Lead dimension (without solder).  
e
1
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom  
of dimension D.  
5. Die to base BeO isolated, terminals to case ceramic isolated.  
6. Controlling dimension: Inch.  
7. Revision 1 dated 1-93.  
WARNING!  
BERYLLIA WARNING PER MIL-PRF-19500  
Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical  
operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not  
be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’ compounds.  
©2001 Fairchild Semiconductor Corporation  
FSPJ260R, FSPJ260F Rev. A2  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
OPTOPLANAR™  
PACMAN™  
POP™  
Power247™  
PowerTrench  
QFET™  
STAR*POWER™  
Stealth™  
FAST  
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
TruTranslation™  
UHC™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QS™  
EcoSPARK™  
E2CMOSTM  
QT Optoelectronics™  
Quiet Series™  
SILENT SWITCHER  
SMART START™  
EnSignaTM  
UltraFET  
VCX™  
FACT™  
FACT Quiet Series™  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. H3  

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