FSPJ260R3 [INFINEON]
Power Field-Effect Transistor, 55A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA;
| 型号： | FSPJ260R3 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 55A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FSPJ260R, FSPJ260F
Data Sheet
June 2001
File Number 4879
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Features
• 55A, 200V, r
• UIS Rated
• Total Dose
= 0.032Ω
DS(ON)
Fairchild Star*Power™ Rad Hard
MOSFETs have been specifically
TM
developed for high performance
applications in a commercial or
military space environment. Star*Power MOSFETs offer the
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
system designer both extremely low r
and Gate
DS(ON)
• Single Event
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300K
RADs while maintaining the guaranteed performance for
Single Event Effects (SEE) which the Fairchild FS families
have always featured.
- Safe Operating Area Curve for Single Event Effects
2
- SEE Immunity for LET of 36MeV/mg/cm with
V
V
up to 100% of Rated Breakdown and
of 10V Off-Bias
DS
GS
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
The Fairchild portfolio of Star*Power FETs includes a family
of devices in various voltage, current and package styles.
The Star*Power family consists of Star*Power and
- Typically Survives 2E12 if Current Limited to I
AS
• Photo Current
Star*Power Gold products. Star*Power FETs are optimized
- 17nA Per-RAD (Si)/s Typically
for total dose and r
performance while exhibiting SEE
DS(ON)
• Neutron
capability at full rated voltage up to an LET of 37.
Star*Power Gold FETs have been optimized for SEE and
Gate Charge providing SEE performance to 80% of the
rated voltage for an LET of 82 with extremely low gate
charge characteristics.
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
2
- Usable to 1E14 Neutrons/cm
Symbol
D
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
G
S
Packaging
TO-254AA
G
S
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
D
Formerly available as type TA45211W.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K
Engineering Samples FSPJ260D1
100K
100K
300K
300K
TXV
Space
TXV
FSPJ260R3
FSPJ260R4
FSPJ260F3
FSPJ260F4
CAUTION: Beryllia Warning per MIL-PRF-19500
refer to package specifications.
Space
©2001 Fairchild Semiconductor Corporation
FSPJ260R, FSPJ260F Rev. A2
FSPJ260R, FSPJ260F
o
T
= 25 C, Unless Otherwise Specified
Absolute Maximum Ratings
C
FSPJ260R, FSPJ260F
UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
200
200
V
V
DS
Drain to Gate Voltage (R
= 20k ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Ω
DGR
GS
Continuous Drain Current
o
T
T
= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
55
35
A
A
A
V
C
D
o
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
200
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
30
±
GS
Maximum Power Dissipation
o
T
T
= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
192
77
W
W
C
T
o
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
T
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100 H (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . I
1.54
110
W/ C
A
A
A
µ
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
55
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
200
SM
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
-55 to 150
300
C
J
STG
o
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
(Distance >0.063in (1.6mm) from Case, 10s Max)
C
L
Weight (Typical)
9.3 (Typical)
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
o
T
= 25 C, Unless Otherwise Specified
Electrical Specifications
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 1mA, V = 0V
MIN
TYP
MAX
-
UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
I
200
-
V
V
V
V
DSS
D
GS
o
V
V
I
= V
DS
,
T
T
T
T
T
T
T
= -55 C
-
-
5.5
4.5
-
GS(TH)
GS
= 1mA
C
C
C
C
C
C
C
o
D
= 25 C
2.0
-
o
= 125 C
1.0
-
-
o
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
V
V
= 160V,
= 0V
= 25 C
-
25
250
100
200
1.87
0.032
0.061
35
140
65
15
140
60
30
-
A
µ
µ
DSS
DS
GS
o
= 125 C
-
-
A
o
I
V
=
30V
±
= 25 C
-
-
nA
nA
V
GSS
GS
o
= 125 C
-
-
Drain to Source On-State Voltage
Drain to Source On Resistance
V
V
I
= 12V, I = 55A
-
-
DS(ON)
GS
D
o
r
= 35A,
T
T
= 25 C
-
0.027
Ω
DS(ON)12
D
C
V
= 12V
o
GS
= 125 C
-
-
-
Ω
C
Turn-On Delay Time
Rise Time
t
V
R
R
= 100V, I = 55A,
-
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
d(ON)
DD
D
= 1.82 , V
= 12V,
Ω
L
GS
t
-
-
r
= 2.35
Ω
GS
Turn-Off Delay Time
Fall Time
t
-
-
d(OFF)
t
-
-
f
Total Gate Charge
Gate Charge Source
Gate Charge Drain
Gate Charge at 20V
Threshold Gate Charge
Plateau Voltage
Q
V
= 0V to 12V
100V < V
DD
< 160V
-
115
50
20
195
12
7
g(12)
GS
I
= 55A
D
Q
Q
-
gs
-
gd
Q
V
V
= 0V to 20V
= 0V to 2V
-
g(20)
GS
GS
Q
-
-
g(TH)
V
I
= 55A, V
= 15V
-
-
(PLATEAU)
D
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
V
= 25V, V = 0V,
GS
-
6500
1000
30
-
-
pF
pF
pF
C/W
ISS
DS
f = 1MHz
C
C
-
-
OSS
RSS
-
-
o
Thermal Resistance Junction to Case
R
-
0.65
JC
θ
©2001 Fairchild Semiconductor Corporation
FSPJ260R, FSPJ260F Rev. A2
FSPJ260R, FSPJ260F
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.2
375
-
UNITS
V
V
I
I
= 55A
-
-
-
-
-
SD
SD
Reverse Recovery Time
Reverse Recovery Charge
t
= 55A, dI /dt = 100A/ s
ns
µ
rr
SD
SD
Q
4.5
C
µ
RR
o
T
= 25 C, Unless Otherwise Specified
Electrical Specifications up to 300K RAD
C
MIN
MAX
MIN
300K RAD
200
1.5
MAX
PARAMETER
SYMBOL
TEST CONDITIONS
100K RAD
UNITS
Drain to Source Breakdown Volts (Note 3)
BV
V
V
V
V
V
V
= 0, I = 1mA
200
-
V
V
DSS
GS
D
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
(Note 3)
V
= V , I = 1mA
DS
2.0
4.5
4.5
100
GS(TH)
GS
GS
GS
GS
GS
D
(Notes 2, 3)
(Note 3)
I
=
30V, V
= 0V
-
-
-
-
100
25
nA
±
GSS
DS
= 160V
I
= 0, V
DS
50
A
µ
DSS
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
(Notes 1, 3)
(Notes 1, 3)
V
= 12V, I = 55A
D
= 12V, I = 35A
D
1.87
0.032
2.20
0.036
V
DS(ON)
r
Ω
DS(ON)12
1. Pulse test, 300 s Max.
µ
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
= 12V, V
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
GS
DS
Note 4
Single Event Effects (SEB, SEGR)
ENVIRONMENT (NOTE 5)
(NOTE 6)
APPLIED
BIAS
(NOTE 7)
MAXIMUM
TYPICAL LET
(MeV/mg/cm)
V
GS
(V)
TEST
SYMBOL
SEESOA
TYPICAL RANGE (µ)
V
BIAS (V)
DS
Single Event Effects Safe Operating Area
37
37
60
60
82
82
36
36
32
32
28
28
-10
-15
-2
200
160
200
-8
160
0
160
-5
120
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
2
o
5. Fluence = 1E5 ions/cm (typical), T = 25 C.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Unless Otherwise Specified
Performance Curves
2
2
LET = 37MeV/mg/cm , RANGE = 36µ
LET = 60MeV/mg/cm , RANGE = 32µ
LET = 82MeV/mg/cm , RANGE = 28µ
240
200
160
120
80
2
LET = 37 BROMINE
2
240
200
160
120
80
FLUENCE = 1E5 IONS/cm (TYPICAL)
o
TEMP = 25 C
LET = 82 GOLD
40
40
LET = 60 IODINE
0
0
0
-5
-10
-15
(V)
-20
-25
-30
0
-4
-8
-12
-16
-20
V
V
(V)
GS
GS
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
FSPJ260R, FSPJ260F Rev. A2
FSPJ260R, FSPJ260F
Unless Otherwise Specified
Performance Curves
(Continued)
1E-3
70
60
50
40
30
20
10
0
1E-4
1E-5
ILM = 10A
30A
100A
300A
1E-6
1E-7
10
30
100
300
1000
-50
0
50
100
150
DRAIN SUPPLY (V)
o
T
, CASE TEMPERATURE ( C)
C
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
LIMIT GAMMA DOT CURRENT TO I
AS
500
100
12V
Q
G
10
100µs
Q
Q
GD
GS
1ms
1
V
G
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
0.1
1
10
100
500
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
CHARGE
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
2.5
200
PULSE DURATION = 250ms, V
GS
= 12V, I = 35A
D
DESCENDING ORDER
V
V
V
V
= 14V
= 12V
= 10V
= 8V
2.0
1.5
1.0
0.5
0.0
GS
GS
GS
GS
160
120
80
40
0
V
= 6 V
GS
-80
-40
0
40
80
120
160
0
2
4
6
8
10
o
T , JUNCTION TEMPERATURE ( C)
J
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
FIGURE 7. TYPICAL NORMALIZED r
TEMPERATURE
vs JUNCTION
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
DS(ON)
©2001 Fairchild Semiconductor Corporation
FSPJ260R, FSPJ260F Rev. A2
FSPJ260R, FSPJ260F
Unless Otherwise Specified
Performance Curves
(Continued)
1
10
0
10
0.5
0.2
0.1
0.05
-1
-2
-3
10
10
10
0.02
0.01
SINGLE PULSE
P
DM
NOTES:
t
DUTY FACTOR: D = t /t
1
1
2
t
2
PEAK T = P
J
x Z
+ T
DM
θ
JC
C
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
300
100
o
STARTING T = 25 C
J
o
STARTING T = 150 C
J
10
IF R = 0
= (L) (I ) / (1.3 RATED BV
t
- V
DD
)
AV
AS
DSS
IF R ≠ 0
t
= (L/R) ln [(I *R) / (1.3 RATED BV
- V ) + 1]
DD
AV
AS
DSS
1
0.001
0.01
0.1
1
10
t
, TIME IN AVALANCHE (ms)
AV
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN I IS REACHED
AS
V
DS
L
BV
DSS
+
I
-
CURRENT
TRANSFORMER
AS
t
P
V
DS
I
AS
V
DD
VARY t TO OBTAIN
P
+
50Ω
REQUIRED PEAK I
AS
V
DD
V
≤ 20V
GS
-
50V-150V
DUT
50Ω
t
P
0V
t
AV
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
©2001 Fairchild Semiconductor Corporation
FSPJ260R, FSPJ260F Rev. A2
FSPJ260R, FSPJ260F
Test Circuits and Waveforms (Continued)
t
t
ON
OFF
t
d(OFF)
V
DD
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
V
DS
V
= 12V
GS
10%
10%
DUT
0V
90%
50%
R
GS
50%
V
GS
PULSE WIDTH
10%
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table).
o
T
= 25 C, Unless Otherwise Specified
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent)
C
PARAMETER
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Drain to Source On Resistance
Gate Threshold Voltage
NOTES:
SYMBOL
TEST CONDITIONS
30V
MAX
UNITS
I
V
V
T
=
20 (Note 7)
nA
±
±
±
GSS
GS
I
= 80% Rated Value
o
25 (Note 7)
A
µ
DSS
DS
r
= 25 C at Rated I
D
20% (Note 8)
20% (Note 8)
±
Ω
DS(ON)
C
V
I
= 1.0mA
V
±
GS(TH)
D
8. Or 100% of Initial Reading (whichever is greater).
9. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Unclamped Inductive Switching
Thermal Response
Gate Stress
V
t
= 20V, L = 0.1mH; Limit = 110A
V
t
= 20V, L = 0.1mH; Limit = 110A
GS(PEAK)
GS(PEAK)
= 100ms; V = 25V; I = 4A; LIMIT = 100mV
= 100ms; V = 25V; I = 4A; LIMIT = 100mV
H H
H
H
H
H
V
= 45V, t = 250 s
V
= 45V, t = 250 s
µ
µ
GS
Optional
MIL-PRF-19500 Group A,
GS
Required
MIL-PRF-19500 Group A,
Pind
Pre Burn-In Tests (Note 9)
o
o
Subgroup 2 (All Static Tests at 25 C)
Subgroup 2 (All Static Tests at 25 C)
Steady State Gate
Bias (Gate Stress)
MIL-PRF-750, Method 1042, Condition B
MIL-PRF-750, Method 1042, Condition B
V
= 80% of Rated Value,
V
= 80% of Rated Value,
GS
= 150 C, Time = 48 hours
GS
T = 150 C, Time = 48 hours
A
o
o
T
A
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-PRF-750, Method 1042, Condition A
MIL-PRF-750, Method 1042, Condition A
V
= 80% of Rated Value,
V
= 80% of Rated Value,
DS
= 150 C, Time = 160 hours
DS
T = 150 C, Time = 240 hours
A
o
o
T
A
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-PRF-19500, Group A, Subgroup 2
MIL-PRF-19500, Group A,
Subgroups 2 and 3
NOTE:
10. Test limits are identical pre and post burn-in.
Additional Tests
PARAMETER
Safe Operating Area
SYMBOL
TEST CONDITIONS
= 160V, t = 10ms
MAX
0.88
200
UNITS
A
SOA
V
t
DS
= 500ms; V =25V; I = 4A
Thermal Impedance
V
mV
∆
SD
H
H
H
©2001 Fairchild Semiconductor Corporation
FSPJ260R, FSPJ260F Rev. A2
FSPJ260R, FSPJ260F
Rad Hard Data Packages - Fairchild Power Transistors
Class S - Equivalents
TXV Equivalent
1.RAD HARD TXV EQUIVALENT - STANDARD DATA
PACKAGE
1. RAD HARD “S” EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A
E. Group B
F. Group C
G. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA
PACKAGE
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Pre and Post Burn-In Read and Record
Data
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL
DATA PACKAGE
D. Group A
E. Group B
- Attributes Data Sheet
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
F. Group C
G. Group D
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
- X-Ray and X-Ray Report
- Attributes Data Sheet
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Subgroups A2, A3, A4, A5 and A7 Data
- Pre and Post RAD Read and Record Data
- Attributes Data Sheet
- Subgroups B1, B3, B4, B5 and B6 Data
- Attributes Data Sheet
- Subgroups C1, C2, C3 and C6 Data
- Attributes Data Sheet
- Pre and Post Radiation Data
©2001 Fairchild Semiconductor Corporation
FSPJ260R, FSPJ260F Rev. A2
FSPJ260R, FSPJ260F
TO-254AA
3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE
A
INCHES
MIN
MILLIMETERS
ØP
E
SYMBOL
MAX
0.260
0.050
0.045
0.800
0.545
MIN
6.33
MAX
6.60
NOTES
A
1
A
0.249
0.040
0.035
0.790
0.535
-
Q
A
1.02
1.27
-
1
H
1
Øb
D
0.89
1.14
2, 3
20.07
13.59
20.32
13.84
-
-
E
D
e
0.150 TYP
0.300 BSC
3.81 TYP
7.62 BSC
4
4
-
e
1
H
J
0.245
0.265
0.160
0.560
0.149
0.130
6.23
6.73
4.06
1
0.140
0.520
0.139
0.110
3.56
13.21
3.54
4
-
1
L
14.22
3.78
0.065 R MAX.
TYP.
ØP
Q
-
L
Øb
2.80
3.30
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. A of
JEDEC outline TO-254AA dated 11-86.
1
2
3
J
e
1
2. Add typically 0.002 inches (0.05mm) for solder coating.
3. Lead dimension (without solder).
e
1
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
5. Die to base BeO isolated, terminals to case ceramic isolated.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
WARNING!
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical
operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not
be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’ compounds.
©2001 Fairchild Semiconductor Corporation
FSPJ260R, FSPJ260F Rev. A2
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Power247™
PowerTrench
QFET™
STAR*POWER™
Stealth™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
EcoSPARK™
E2CMOSTM
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
EnSignaTM
UltraFET
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
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Definition of Terms
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Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
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First Production
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Rev. H3
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