G300HHCK12P2P [INFINEON]

Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, INT-A-PAK-2, MODULE-3;


型号：	G300HHCK12P2P
厂家：	Infineon
描述：	Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, INT-A-PAK-2, MODULE-3 局域网电动机控制栅瞄准线晶体管
文件：	总6页 (文件大小：163K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD-97014B

HiRel^TMINT-A-Pak 2, PLASTIC

HALF-BRIDGE IGBT MODULE

G300HHCK12P2

Product Summary

CE(SAT)

Part Number

G300HHCK12P2

1200V

300A

2.2

HiRel^TMINT-A-Pak 2

The HiRel^TMINT-A-Pak series are isolated near

hermetic power modules which combine the latest

IGBT and Soft Recovery Rectifier Technology. The

module uses both high-speed and low Vce(sat)

IGBT's packaged for ultra low thermal resistance

junction to case. The G300HHCK12P2 power

module consists of six IGBT's and six FRED's in a

Phase- Leg or Half-Bridge configuration.

Features:

Rugged, Lightweight near Hermetic Package

with Integrated Power Terminal Cap

Gen IV IGBT Technology

Soft Recovery Rectifiers

Ultra-Low Thermal Resistance

Zener Gate Protection

Very Low Conduction and Switching Loss

-55°C to +125°C Operating Temperature

Screening to meet the intent of

MIL-PRF-38534 Class H

Short Circuit Capability

2.0 Ohms Series Gate Resistor

High Altitude Operation, 85,000 Feet Above

Sea Level at Rated Voltage

Absolute Maximum Ratings @ Tj=25°C (unless otherwise specified)

Parameter

Symbol

Value

1200

±20

Units

CES

Collector-to-Emitter Voltage

Gate-to-Emitter Voltage

Continuous Collector Current @ Tc = 25°C

Continuous Collector Current @ Tc = 100°C

Isolation Voltage

450

300

2500

ISOL

RMS

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01/20/14

G300HHCK12P2

Electrical Characteristics @ Tj = 25°C (unless otherwise specified)

Parameter

Symbol

Test Conditions

Min. Typ. Max. Units

Off Characteristics

= 0V

Collector Emitter Breakdown Voltage

Zero Gate Voltage Collector Current

Gate Emitter Leakage Current

1200

CES

=0V, V = 1200V

1.0

CES

= ±15V, V = 0V

GES

On Characteristics

= V , I = 1.0mA

Gate Threshold Voltage

3.5

7.5

2.7

GE(TH)

= 15V, I = 300A

Collector Emitter Saturation Voltage

2.2

CE(SAT)

Dynamic Characteristics

Total Gate Charge

= 600V, I = 300A, V = 15V

2300

Input Capacitance

IES

OES

= 0V, V = 25V, f = 1.0MHz

Output Capacitance

3.0

0.3

Reverse Transfer Capacitance

RES

Switching Inductive Load Characteristics

Turn-On Delay Time

td(on)

830

1000

Rise Time

Turn-On Losses

300

100

400

= 600V, I = 300A, V =15V

= 20Ω, R

=10Ω, L=100µH

Turn-Off Delay Time

td(off)

1900 2200

G(on)

G(off)

Fall Time

Turn-Off Losses

300

400

off

Diode Characteristics

= 300A

Forward Voltage

1.9

2.2

Reverse Recovery Charge

Peak Reverse Recovery Current

Qrr

Irr

=600V, I =300A, di/dt =-800A/ s

Reverse Recovery Time

trr

500

800

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G300HHCK12P2

Electrical Characteristics @ Tj = 125°C (unless otherwise specified)

Parameter

Symbol

Test Conditions

Min. Typ. Max. Units

Off Characteristics

= 0V

Collector Emitter Breakdown Voltage

Zero Gate Voltage Collector Current

Gate Emitter Leakage Current

1200

CES

=0V, V = 1200V

3.0

CES

= ±15V, V = 0V

GES

On Characteristics

= V , I = 1.0mA

Gate Threshold Voltage

3.5

7.5

2.7

GE(TH)

= 15V, I = 300A

Collector Emitter Saturation Voltage

2.2

CE(SAT)

Diode Characteristics

= 300A

Forward Voltage

1.9

2.2

Thermal-Mechanical Specifications

Parameter

Symbol

Min

Max

Units

IGBT Thermal Resistance, Junction to Case, per Switch

Diode Thermal Resistance, Junction to Case, per Switch

Operating Junction Temperature Range

Storage Temperature Range

0.06

°C/W

thJC

0.10

150

-55

°C

125

STG

Screw Torque - Mounting

in-lbs

Screw Torque - Terminals

Module Weight

270

Module Screening

Test or Inspection

MIL-STD-883

Comments

Method

2017

Condition

Internal Visual

Temperature Cycle

Mechanical Shock

Burn-in

1010

10 Cycles, -55°C to +125°C

1500G, 0.5ms, 5 Times (Y1 direction only)

160 Hrs @ +125°C

2002

1015

Final Electrical Test

External Visual

Group A, -55°C, +25°C, +125°C

2009

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G300HHCK12P2

Schematic

500

400

300

200

100

125

150

T , Case Temperature (°C)

Fig 1: Maximum Collector Current Vs Case Temperature

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G300HHCK12P2

90% Vge

+Vge

Vce

90% Ic

10% Vce

5% Ic

td(off)

t1+5µS

Eoff = Vce ic dt

∫

Vcet1Ic dt

Fig. 3 - Test Waveforms for Circuit of Fig. 2,

Fig. 2 - Test Circuit for Measurement of E_on,

Defining E_off, t_d(off), t_f

E_off, t_rr, Q_rr, I_rr, t_d(on), t_r, t_d(off), t_f

trr

id dt

trr

GATE VOLTAGE D.U.T.

Qrr =

Ic dt

∫

10% +Vg

+Vg

10% Irr

10% Vcc

Vcc

DUT VOLTAGE

AND CURRENT

Vce

Vpk

Irr

10% Ic

Vcc

Ipk

90% Ic

DIODE RECOVERY

WAVEFORMS

5% Vce

td(on)

Vce ie dt

Eon = Vce Ic dt

∫

Erec = Vd id dt

Vc Ic dt

∫

DIODE REVERSE

RECOVERY ENERGY

Fig. 4 - Test Waveforms for Circuit of Fig. 2,

Fig. 3 - Test Waveforms for Circuit of Fig. 2,

Defining E_rec, t_rr, Q_rr, I_rr

Defining E_on, t_d(on), t_r

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G300HHCK12P2

Case Outline and Dimensions - HiRel^TMINT-A-Pak 2

Notes: 1) All dimensions are in inches

2) Unless otherwise specified,

Tolerances .XX = ±0.01, .XXX = ±0.005

Part Numbering Nomenclature

G 300 HH C K 12 P2 H

Screening Level

P = Unscreened, 25°C Electrical Test

( Not intended for Qualification)

H = Screened per MIL-PRF-38534

IGBT Module - Hirel

Current Capability

300 = 300 Amps

Package Type

P2 = HiRel^TMINT-A-Pak 2,

2.5" X 4.0" X 1.0"

Circuit Configuration

HH = Half Bridge

Voltage

12 = 1200V

Generation

IGBT / FWD Configuration

C = GEN 5 (NPT) / GEN 3

IGBT Speed / SC Capability

K = Fast, SC Capable

WORLD HEADQUARTERS: 101 N. Sepulveda Blvd, El Segundo, California 90245, Tel: (310) 252-7105

IR LEOMINSTER: 205 Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776

Visit us at www.irf.com for Sales contact information

Data and specifications subject to change without notice.

01/2014

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