GA600GD25S [INFINEON]

SINGLE SWITCH IGBT DUAL INT-A-PAK; 单开关IGBT双INT -A-朴


型号：	GA600GD25S
厂家：	Infineon
描述：	SINGLE SWITCH IGBT DUAL INT-A-PAK 单开关IGBT双INT -A-朴开关双极性晶体管
文件：	总10页 (文件大小：629K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 50071C

GA600GD25S

Standard Speed IGBT

SINGLE SWITCH IGBT DUAL INT-A-PAK

Features

V_CES= 250V

• Standard speed, optimized for battery powered

application

• Very low conduction losses

• HEXFRED^TMantiparallel diodes with ultra-soft

recovery

V_{CE(on) typ.}= 1.25V

• Industry standard package

• UL recognition pending

• Internal thermistor

@V = 15V, I_C= 600A

Benefits

• Increased operating efficiency

• Direct mounting to heatsink

• Performance optimized for power conversion: UPS,

SMPS, Welding

• Lower EMI, requires less snubbing

Absolute Maximum Ratings

Parameter

Collector-to-Emitter Voltage

Max.

250

Units

V_CES

I_C@ T_C= 25°C

Continuous Collector Current

Pulsed Collector Current

600

I_CM

1200

I_LM

Peak Switching Current

I_FM

Peak Diode Forward Current

Gate-to-Emitter Voltage

V_GE

V_ISOL

RMS Isolation Voltage, Any Terminal To Case, t = 1 min

Maximum Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

2500

1920

1000

P_D@ T_C= 25°C

P_D@ T_C= 85°C

T_J

-40 to +150

-40 to +125

°C

T_STG

Thermal / Mechanical Characteristics

Parameter

Thermal Resistance, Junction-to-Case - IGBT

Typ.

—

Max.

0.065

0.20

—

Units

R_θJC

R_θCS

Thermal Resistance, Junction-to-Case - Diode

Thermal Resistance, Case-to-Sink - Module

Mounting Torque, Case-to-Heatsink

Mounting Torque, Case-to-Terminal 1, 2

Mounting Torque, Case-to-Terminal 3,4,5,6

Weight of Module

—

°C/W

0.04

—

6.0

N m

—

5.0

—

1.5

365

—

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08/27/02

GA600GD25S

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_GE= 0V, I_C= 1mA

V_(BR)CES

V_CE(on)

Collector-to-Emitter Breakdown Voltage 250

—

Collector-to-Emitter Voltage

Gate Threshold Voltage

—

3.0

—

1.25 1.4

V_GE= 15V, I_C= 600A

1.25

—

6.0

—

V_GE= 15V, I_C= 600A, T_J= 125°C

I_C= 5.0mA, V_CE= 6.0V

V_GE(th)

∆V_GE(th)/∆T_JTemperature Coeff. of Threshold Voltage

g_fe

-11

720

—

mV/°C V_CE= 6.0V, I_C= 5.0mA,T_C= 25/125°C

Forward Transconductance

—

V_CE= 25V, I_C= 600A

I_CES

Collector-to-Emitter Leaking Current

2.0

V_GE= 0V, V_CE= 250V

—

V_GE= 0V, V_CE= 250V, T_J= 125°C

I_F= 300A, V_GE= 0V

V_FM

Diode Forward Voltage - Maximum

1.5 1.8

1.5

—

1.0

I_F= 300A, V_GE= 0V, T_J= 125°C

I_GES

Gate-to-Emitter Leakage Current

Pulse Diode Temp Rise

µA

°C

Ω

V_GE= 14V (18V zeners gate-emitter)

∆T_DP

R-T₂₅

—

I_C= 300A, t = 150msec, Tc =70°C

I = 100mA,P = 2.5mW/°C (see note 1)

Thermistor, Positive Temp Coefficient

738 820 902

Dynamic Characteristics - T_J= 125°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Q_g

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

—

3825 5738

555 832

1262 1893

V_CC= 200V, V_GE= 15V

Qge

Q_gc

t_d(on)

t_r

nC I_C= 600A

T_J= 25°C

1060

950

846

934

—

R_G1= 15Ω, R_G2= 0Ω,

I_C= 600A

Rise Time

t_d(off)

t_f

Turn-Off Delay Time

V_{CC =}150V,

V_GE15V

Inductor load

Fall Time

E_on

Turn-On Switching Energy

Turn-Off Switching Energy

Total Switching Energy

Input Capacitance

mJ See Fig. 17, 19

E_{off (1)}

E_{ts (1)}

C_ies

C_oes

C_res

t_rr

105

122 250

86063

9754

1913

314

—

V_GE= 0V

Output Capacitance

V_CC= 30V

ƒ = 1 MHz

I_C= 600A

R_G1= 15Ω

Reverse Transfer Capacitance

Diode Reverse Recovery Time

Diode Peak ReverseCurrent

Diode Recovery Charge

Diode Peak Rate of Fall of Recovery

During t_b

I_rr

Q_rr

12513

632

µC R_G2= 0Ω

A/µs V_{CC =}150V

di_(rec)M_/dt

di/dt = 500A/µs

Notes:

1. The thermistor has an average rate of change of 7Ω /°C between 20°C and 125°C.

Consult U.S. Sensor data sheet for P821GS1K for details

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GA600GD25S

500

400

300

200

100

For both:

Duty cycle: 50%

= 125°C

= 90°C

sink

Gate drive as specified

333

Power Dissipation =

Square wave:

60% of rated

voltage

Ideal diodes

0.1

100

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I_RMSof fundamental)

10000

1000

10000

1000

100

T = 125 C

100

T = 25 C

= 15V

= 25V

80µs PULSE WIDTH

0.6

0.8

1.0

1.2

1.4 1.6 1.8

4.0

5.0

6.0

7.0 8.0

, Collector-to-Emitter Voltage (V)

, Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

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GA600GD25S

2.0

1.5

1.0

0.5

800

= 15V

80 us PULSE WIDTH

= 1000A

=1200A

600

400

200

=600A

=300A

-60 -40 -20

20 40 60 80 100 120 140 160

100

125

150

T , Junction Temperature ( C)

T , Case Temperature ( C)

Fig. 4 - Maximum Collector Current vs. Case

Fig. 5 - Typical Collector-to-Emitter Voltage

Temperature

vs. Junction Temperature

0.1

D = 0.50

0.20

0.10

0.05

Notes:

1. Duty factor D= t / t

SINGLE PULSE

0.02

(THERMAL RESPONSE)

0.01

2. Peak T =P x Z

+ T

thJC

1000

0.01

0.0001

0.001

0.01

0.1

100

t₁, Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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GA600GD25S

160000

120000

80000

40000

200V

= 0V,

f = 1MHz

C SHORTED

= 400V

= C + C

= 600A

ies

gc ,

= C

res

= C + C

oes

ies

oes

res

100

1000

2000

3000

4000

, Collector-to-Emitter Voltage (V)

Q , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs.

Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage

Gate-to-Emitter Voltage

1000

150

Ω;

Ω

R_G= 15 R_G2= 0

= 150V

= 15V

= 25

V_GE= 15V

V_CC= 150V

= 600A

I_C= 1000A

140

130

120

110

I_C= 600A

I_C= 300A

100

-60 -40 -20

20 40 60 80 100 120 140 160

( Ω )

, Gate Resistance

T , Junction Temperature (°C)

Fig. 9 - Typical Switching Losses vs. Gate

Fig. 10 - Typical Switching Losses vs.

Resistance

Junction Temperature

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GA600GD25S

1500

1200

900

600

300

320

V_GE= 20V

17V

T_J= 125°C

V_CEmeasured at terminal ( Peak Voltage )

=15Ω;R_G2= 0 Ω

R_G1

= 125 C

= 150V

= 15V

240

160

SAFE OPERATING AREA

200

400

600

800

1000

1200

100

200

300

, Collector Current (A)

, Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs.

Fig. 12 - Reverse Bias SOA

Collector-to-Emitter Current

1000

20000

16000

12000

8000

= 1000A

= 600A

= 300A

T = 125°C

T = 25°C

100

V_R= 150V

T_J= 125°C

T_J= 25°C

4000

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

300

400

500

600

Forward Voltage Drop - V

(V)

di /dt - (A/µs)

Fig. 14 - Typical Stored Charge vs. di_f/dt

Fig. 13 - Typical Forward Voltage Drop vs.

Instantaneous Forward Current

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GA600GD25S

120

100

360

340

320

300

280

= 1000A

= 600A

= 1000A

= 600A

= 300A

V_R= 150V

T_J= 125°C

T_J= 25°C

V_R= 150V

T_J= 125°C

T_J= 25°C

300

400

500

600

400

500

600

di /dt - (A/µs)

Fig. 15 - Typical Reverse Recovery vs. di_f/dt

Fig. 16 - Typical Recovery Current vs. di_f/dt

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GA600GD25S

90%

10%

90%

d(off)

10%

d(on)

t=5µs

off

Fig. 17a - Test Circuit for Measurement of

_LM, E_on, E_off(diode), t_rr, Q_rr, I_rr, t_d(on), t_r, t_d(off), t_f

E = (E +E

ts on off

)

Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining

E_off, t_d(off), t_f

trr

id dt

trr

GATE VOLTAGE D.U.T.

Qrr =

Ic dt

∫

10% +Vg

+Vg

10% Irr

10% Vcc

Vcc

DUT VOLTAGE

AND CURRENT

Vce

Vpk

Irr

10% Ic

Vcc

Ipk

90% Ic

DIODE RECOVERY

WAVEFORMS

5% Vce

td(on)

Vce ie dt

Eon = Vce Ic dt

∫

Erec = Vd id dt

Vd Ic dt

∫

DIODE REVERSE

RECOVERY ENERGY

Fig. 17d - Test Waveforms for Circuit of Fig. 18a,

Fig. 17c - Test Waveforms for Circuit of Fig. 18a,

Defining E_rec, t_rr, Q_rr, I_rr

Defining E_on, t_d(on), t_r

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GA600GD25S

GATE SIGNAL

DEVICE UNDER TEST

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

Figure 17e. Macro Waveforms for Figure 18a's Test Circuit

150V

2 X I_C@25°C

D.U.T.

R_L=

1000V

V *

0 - 150V

50V

6000µF

100V

Figure 19. Pulsed Collector Current

Test Circuit

Figure 18. Clamped Inductive Load Test Circuit

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GA600GD25S

Notes:

Repetitive rating; V_GE= 17V, pulse width limited by

max. junction temperature.

See fig. 17

For screws M6.

Pulse width 50µs; single shot.

Case Outline — DUAL INT-A-PAK

6 [ . 2 3 6 ] MAX.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.08/02

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