HF30C120ACB [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, 4 INCH, WAFER;
| 型号： | HF30C120ACB |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, 4 INCH, WAFER 二极管 |
| 文件： | 总1页 (文件大小：13K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-2.499
HF30C120ACB
TARGET
HF30C120ACB Hexfred Die in Wafer Form
1200 V
Size 30
4" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
Description
Guaranteed (Min/Max)
Test Conditions
TJ = 25°C, IF = 4.0A
VFM
Forward Voltage
2.8V Max.
1200V Min.
10µA Max.
BVR
Reverse Breakdown Voltage
Reverse Leakage Current
TJ = 25°C, IR = 250µA
TJ = 25°C, VR = 1200V
IRM
Mechanical Data
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Al-Ti-Ni-Ag ( 1kA-1kA-4kA-6kA )
99% Al, 1% Si (3 microns)
0.115" x 0.155"
Wafer Diameter:
100mm, with std. < 100 > flat
.015" + / -.003"
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
01-5156
100 Microns
Reject Ink Dot Size
0.25mm Diameter Minimum
See Die Outline drawing below
Store in original container, in dessicated
nitrogen, with no contamination
Ink Dot Location
Recommended Storage Environment:
Reference Standard IR packaged part ( for design ) : HFA08PB120
Die Outline
2.92
NOTES :
(.115 )
INK DOT
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )
2. CONTROLLING DIMENSION : ( INCH )
3. LETTER DESIGNATION :
LOCATION
S = SOURCE
G = GATE
4. DIMENSIONAL TOLERANCES
SK = SOURCE KELVIN
IS = CURRENT SENSE
ANODE
BONDING PADS : < 0.635 TOLERANCE = +/- 0.013
2.51
(.099 )
3.94
(.155 )
WIDTH
&
LENGTH
OVERALL DIE
WIDTH
&
< (.0250 ) TOLERANCE =+/- (.0005 )
> 0.635 TOLERANCE = +/- 0.025
> (.0250 ) TOLERANCE = +/- (.0010 )
< 1.270 TOLERANCE = +/- 0.102
< (.050 ) TOLERANCE = +/- (.004 )
> 0.635 TOLERANCE = +/- 0.203
> (.050 ) TOLERANCE = +/- (.008 )
LENGTH
1.50
(.059 )
5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III
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