HF50D060ACE [INFINEON]

Rectifier Diode, 1 Phase, 1 Element, 50A, Silicon, 125 MM, WAFER;
HF50D060ACE
型号: HF50D060ACE
厂家: Infineon    Infineon
描述:

Rectifier Diode, 1 Phase, 1 Element, 50A, Silicon, 125 MM, WAFER

功效 二极管
文件: 总2页 (文件大小:27K)
中文:  中文翻译
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PD - 94380  
HF50D060ACE  
Hexfred Die in Wafer Form  
600V  
Features  
GEN3 Hexfred Technology  
Low VF  
Low IRR  
Low tRR  
I
F(nom)=50A  
V
F(typ)= 1.35V @ IF(nom) @ 25°C  
Soft Reverse Recovery  
Motor Control Antiparallel Diode  
125mm Wafer  
Benefits  
Benchmark Efficiency for Motor Control Applications  
Rugged Transient Performance  
Low EMI  
Excellent Current Sharing in Parallel Operation  
Qualified for Industrial Market  
Electrical Characteristics (Wafer Form)  
Parameter  
Description  
Guaranteed (min, max)  
TestConditions  
VF  
Forward Voltage Drop  
0.85V min, 1.2V max  
600V min  
IC = 10A, TJ = 25°C  
BVR  
IRM  
Reverse Breakdown Voltage  
Reverse Leakage Current  
TJ = 25°C, IR = 1mA  
20µA max  
TJ = 25°C, VR = 600V  
Mechanical Data  
Nominal Backmetal Composition, (Thickness)  
Nominal Front Metal Composition, (Thickness)  
Dimensions  
Cr- Ni - Ag, (1kA - 4kA - 6kA)  
99% Al/1% Si, (3µm)  
0.170'' x 0.170"  
Wafer Diameter  
125mm, with std. < 100 > flat  
381µm, +/-15µm  
Wafer Thickness, Tolerance  
Relevant Die Mechanical Dwg. Number  
Minimum Street Width  
01 - 5512  
100µm  
Reject Ink Dot Size  
0.25mm diameter minimum  
Consistent throughout same wafer lot  
Store in original container, in dessicated  
nitrogen, with no contamination  
For optimum electrical results, die attach  
temperature should not exceed 300°C  
Ink Dot Location  
Recommended Storage Environment  
Recommended Die Attach Conditions  
Die Outline  
www.irf.com  
1
04/19/02  
HF50D060ACE  
Hexfred Die in Wafer Form  
Fig. 1 - Typical Diode Recovery W aveform  
V CC = 400V; Rg = 5 ; Tj = 150°C  
L = 200µH; Driver = IRG P50B60K-E  
100  
0
60  
45  
Volta ge  
-100  
-200  
-300  
-400  
-500  
-600  
-700  
30  
15  
)
)
0
(V  
(A  
F
F
I
V
-15  
-30  
-45  
-60  
Current  
-0.10  
-0.05  
0.00  
0.05  
0.10  
0.15  
0.20  
time (µS)  
Fig. 2 - Typical Diode Forward  
Charac teristics  
Fig. 3 - Diode Recovery Circuit  
100  
- 40°C  
25°C  
DUT  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
150°C  
)
L
(A  
F
I
150°C  
DRIVER  
VCC  
Rg  
25°C  
- 40°C  
0
0.5  
1
1.5  
2
V F (V)  
www.irf.com  
2

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