HFA08TB120PBF [INFINEON]
ULTRAFAST, SOFT RECOVERY DIODE; 超快，软恢复二极管
| 型号： | HFA08TB120PBF |
| 厂家： | 
Infineon |
| 描述： | ULTRAFAST, SOFT RECOVERY DIODE |
| 文件： | 总7页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95736
HFA08TB120PbF
HEXFREDTM
Ultrafast, Soft Recovery Diode
BASE
CATHODE
VR = 1200V
Features
VF (typ.)* = 2.4V
4
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
IF (AV) = 8.0A
Qrr (typ.)=140nC
2
IRRM (typ.) = 4.5A
Very Low Qrr
trr (typ.) = 28ns
Specified at Operating Conditions
Lead-Free
3
1
CATHODE
ANODE
di(rec) M /dt (typ.)* = 85A /µs
2
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
TO-220AC
Description
International Rectifier's HFA08TB120 is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and
8 amps continuous current, the HFA08TB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFREDfeaturescombinetoofferdesignersarectifierwithlowernoiseandsignificantly
lower switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA08TB120 is ideally suited for applications in power supplies
and power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter
Max
1200
8.0
130
32
73.5
29
- 55 to 150
Units
V
A
VR
Cathode-to-AnodeVoltage
ContinuousForwardCurrent
SinglePulseForwardCurrent
MaximumRepetitiveForwardCurrent
MaximumPowerDissipation
MaximumPowerDissipation
OperatingJunctionand
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
W
°C
TSTG
StorageTemperatureRange
*125°C
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10/18/04
HFA08TB120PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units Test Conditions
VBR
Cathode Anode Breakdown
Voltage
1200
-
-
V
IR = 100µA
VFM
Max. Forward Voltage
-
-
-
-
-
-
-
2.6 3.3
V
IF = 8.0A
3.4
2.4
4.3
3.1
IF = 16A
IF = 8.0A, TJ = 125°C
VR = VR Rated
IRM
Max. Reverse Leakage
Current
0.31 10
135 1000
µA
TJ = 125°C, VR = 0.8 x VR RatedD R
CT
LS
JunctionCapacitance
SeriesInductance
11
20
-
pF
nH
VR = 200V
Rated
8.0
Measured lead to lead 5mm from pkg body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units Test Conditions
t
t
t
ReverseRecoveryTime
-
-
-
-
-
-
-
-
-
28
63
-
ns
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
rr
95
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
IF = 8.0A
rr1
rr2
106 160
VR = 200V
IRRM1
IRRM2
Peak RecoveryCurrent
ReverseRecoveryCharge
4.5
6.2
8.0
11
A
di /dt = 200A/µs
f
Q
Q
140 380 nC
335 880
rr1
rr2
di(rec)M /dt1 PeakRateofRecovery
di(rec)M /dt2 Current During t
133
85
-
-
A/µs
b
Thermal - Mechanical Characteristics
Parameter
Min
Typ
Max
Units
T
lead
LeadTemperature
-
-
300
°C
RthJC
RthJA
RthCS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
Weight
-
-
-
-
1.7
40
-
k/W
-
0.25
6.0
0.21
-
Wt
-
-
g
-
-
(oz)
MountingTorque
6.0
5.0
12
10
Kg-cm
lbfin
-
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
2
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HFA08TB120PbF
1000
100
10
100
10
1
T
= 150˚C
J
125˚C
100˚C
1
0.1
0.01
25˚C
0
300
600
900
1200
ReverseVoltage-VR(V)
Fig.2-Typ. Values Of Reverse Current
Vs. Reverse Voltage
100
10
1
T
= 25˚C
J
T
T
T
= 150˚C
= 125˚C
J
J
J
=
25˚C
0
2
4
6
8
10
1
10
100
1000
10000
ForwardVoltageDrop-VFM(V)
ReverseVoltage-VR(V)
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage
Fig.1-Max. Forward Voltage Drop Characteristics
10
D = 0.50
D = 0.20
1
D = 0.10
D = 0.05
D = 0.02
P
DM
t
1
t
D = 0.01
Single Pulse
(Thermal Resistance)
0.1
2
Notes:
1. Duty factor D = t1/ t 2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1,RectangularPulseDuration(Seconds)
Fig.4-Max. Thermal Impedance Z thJC Characteristics
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HFA08TB120PbF
20
16
12
8
160
140
120
100
80
VR= 160V
TJ= 125˚C
IF = 8 A
IF = 4 A
TJ
= 25˚C
IF = 8 A
IF = 4 A
60
4
40
V
= 160V
= 125˚C
R
T
J
T
= 25˚C
J
0
100
20
100
1000
1000
di F /dt (A/µs)
di F /dt (A/µs)
Fig.5-Typical Reverse Recovery
Vs. dif/dt
Fig.6-Typical Recovery Current
Vs. dif/dt
1200
1000
800
600
400
200
0
1000
100
10
V
= 160V
= 125˚C
= 25˚C
R
IF = 8 A
IF = 4 A
T
J
T
J
IF = 8 A
IF = 4 A
V
= 160V
R
T
J
= 125˚C
T
J
= 25˚C
100
1000
100
1000
di F /dt (A/µs)
di F /dt (A/µs)
Fig.7-Typical di (REC) M/dt vs.dif/dt
Fig.8-TypicalStoredCharge vs.dif/dt
4
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HFA08TB120PbF
Reverse Recovery Circuit
V
= 200V
R
Ω
0.01
L = 70µH
D.U.T.
D
di F /dt
ADJUST
IRFP250
G
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
t
rr
I
F
t
t
a
b
0
4
Q
rr
2
I
0.5
I
RRM
RRM
5
di(rec)M/dt
0.75
I
RRM
1
di /dt
F
1. di /dt - Rate of change of current through zero
crossing
4. Q - Area under curve defined by t
F
rr
rr
and I
RRM
t
x I
RRM
2
rr
Q
=
2. I
- Peak reverse recovery current
rr
RRM
3. t - Reverse recovery time measured from zero
5. di
/ dt - Peak rate of change of
rr
(rec) M
current during t portion of t
crossing point of negative going I to point where
F
b
rr
a line passing through 0.75 I
extrapolated to zero current
and 0.50 I
RRM
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
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5
HFA08TB120PbF
TO-220AC Package Outline
Dimensions are shown in millimeters (inches)
TO-220AC Part Marking Information
PART NUMBER
DAT E CODE
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE: THIS IS AHFA06TB120
LOT CODE 1789
ASS EMBLED ON WW 19, 2001
IN THE ASSEMBLY LINE "C"
P = LEAD-FREE
YEAR 1 = 2001
WE E K 19
AS S E MB L Y
LOT CODE
LINE C
PART NUMBER
DAT E CODE
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE: THIS IS AHFA06TB120
LOT CODE 1789
ASSEMBLED ON WW19, 2001
IN THE ASSEMBLY LINE "C"
YEAR 1 = 2001
WE E K 19
AS S E MB L Y
LOT CODE
P = LEAD-FREE
6
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HFA08TB120PbF
Ordering Information Table
HF
08
A
08 TB 120
DeviceCode
HF
A
TB
120
2
4
5
1
3
1
2
-
-
HexfredFamily
ProcessDesignator
A
B
= subs. elec. irrad.
= subs. Platinum
3
-
-
Current Rating
(08 = 8A)
4
5
PackageOutline
VoltageRating
(TB = TO-220, 2 Leads)
(120 = 1200V)
-
Note:"PbF" suffix at the end of the part number
indicates Lead-Free.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
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