HFA08TB120 [INFINEON]

Ultrafast, Soft Recovery Diode; 超快，软恢复二极管


型号：	HFA08TB120
厂家：	Infineon
描述：	Ultrafast, Soft Recovery Diode 超快，软恢复二极管二极管功效局域网软恢复二极管
文件：	总7页 (文件大小：133K)
中文：	中文翻译
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Bulletin PD -2.383 rev. C 11/00

HFA08TB120

HEXFRED

Ultrafast, Soft Recovery Diode

BASE

CATHODE

V_R= 1200V

Features

V_F(typ.)* = 2.4V

I_{F (AV)}= 8.0A

Q_rr(typ.)=140nC

I_RRM(typ.) = 4.5A

• Ultrafast Recovery

• Ultrasoft Recovery

• Very Low I_RRM

• Very Low Q_rr

t_rr(typ.) = 28ns

di_{(rec) M}/dt (typ.)* = 85A /µs

• Specified at Operating Conditions

ANODE

CATHODE

Benefits

• Reduced RFI and EMI

• Reduced Power Loss in Diode and Switching

Transistor

• Higher Frequency Operation

• Reduced Snubbing

• Reduced Parts Count

TO-220AC

Description

International Rectifier's HFA08TB120 is a state of the art ultra fast recovery diode.

Employing the latest in epitaxial construction and advanced processing techniques it

features a superb combination of characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and

8 amps continuous current, the HFA08TB120 is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the

HEXFRED product line features extremely low values of peak recovery current (I_RRM) and

does not exhibit any tendency to "snap-off" during the t_bportion of recovery. The

HEXFRED features combine to offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching transistor. These HEXFRED

advantages can help to significantly reduce snubbing, component count and heatsink

sizes. The HEXFRED HFA08TB120 is ideally suited for applications in power supplies

and power conversion systems (such as inverters), motor drives, and many other similar

applications where high speed, high efficiency is needed.

Absolute Maximum Ratings

Parameter

Max

Units

V_R

Cathode-to-AnodeVoltage

ContinuousForwardCurrent

SinglePulseForwardCurrent

MaximumRepetitiveForwardCurrent

MaximumPowerDissipation

OperatingJunctionand

1200

8.0

I_F@ T_C= 100°C

I_FSM

I_FRM

130

P_D@ T_C= 25°C

73.5

P_D@ T_C= 100°C

T_J

T_STG

- 55 to 150

°C

StorageTemperatureRange

*125°C

HFA08TB120

Bulletin PD-2.383 rev. C 11/00

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min Typ Max Units Test Conditions

V_BR

V_FM

Cathode Anode Breakdown

1200

I_R= 100µA

Voltage

Max. Forward Voltage

2.6 3.3

I_F= 8.0A

3.4

2.4

4.3

3.1

I_F= 16A

I_F= 8.0A, T_J= 125°C

V_R= V_RRated

I_RM

Max. Reverse Leakage

Current

0.31 10

135 1000

µA

T_J= 125°C, V_R= 0.8 x V_RRated_{D R}

C_T

L_S

JunctionCapacitance

SeriesInductance

V_R= 200V

Rated

8.0

Measured lead to lead 5mm from pkg body

Dynamic Recovery Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min Typ Max Units Test Conditions

ReverseRecoveryTime

I_F= 1.0A, di_f/dt = 200A/µs, V_R= 30V

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

I_F= 8.0A

rr1

rr2

106 160

4.5 8.0

V_R= 200V

I_RRM1

I_RRM2

Peak RecoveryCurrent

ReverseRecoveryCharge

di /dt = 200A/µs

6.2

140 380 nC

335 880

rr1

rr2

di_(rec)M/dt1 PeakRateofRecovery

di_(rec)M/dt2 Current During t

133

A/µs

Thermal - Mechanical Characteristics

Parameter

Min

Typ

Max

Units

lead

LeadTemperature

300

°C

R_thJC

R_thJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Thermal Resistance, Case to Heat Sink

Weight

1.7

k/W

R_thCS

0.25

6.0

0.21

(oz)

MountingTorque

6.0

5.0

Kg-cm

lbf•in

0.063 in. from Case (1.6mm) for 10 sec

"#Typical Socket Mount

Mounting Surface, Flat, Smooth and Greased

HFA08TB120

Bulletin PD-2.383 rev. C 11/00

100

1000

100

= 150˚C

125˚C

100˚C

0.1

0.01

25˚C

300

600

900

1200

ReverseVoltage-V_R(V)

Fig.2-Typ. Values Of Reverse Current

Vs. Reverse Voltage

100

= 25˚C

= 150˚C

= 125˚C

25˚C

100

1000

10000

ForwardVoltageDrop-V_FM(V)

ReverseVoltage-V_R(V)

Fig.3-Typical Junction Capacitance

Fig.1-Max. Forward Voltage Drop Characteristics

Vs. Reverse Voltage

D = 0.50

D = 0.20

D = 0.10

D = 0.05

D = 0.02

D = 0.01

Single Pulse

(Thermal Resistance)

0.1

Notes:

1. Duty factor D = t1/ t 2

2. Peak Tj = Pdm x ZthJC + Tc

0.01

0.00001

0.0001

0.001

0.01

0.1

t1,RectangularPulseDuration(Seconds)

Fig.4-Max. Thermal Impedance Z_thJCCharacteristics

HFA08TB120

Bulletin PD-2.383 rev. C 11/00

160

140

120

100

V_R= 160V

T_J= 125˚C

IF = 8 A

IF = 4 A

T_J

= 25˚C

IF = 8 A

IF = 4 A

= 160V

= 125˚C

= 25˚C

100

1000

di _F/dt (A/µs)

Fig.5-Typical Reverse Recovery

Vs. di_f/dt

Fig.6-Typical Recovery Current

Vs. di_f/dt

1200

1000

800

600

400

200

1000

100

= 160V

= 125˚C

= 25˚C

IF = 8 A

IF = 4 A

IF = 8 A

IF = 4 A

= 160V

= 125˚C

= 25˚C

100

1000

100

1000

di _F/dt (A/µs)

Fig.8-TypicalStoredCharge vs.di_f/dt

di _F/dt (A/µs)

Fig.7-Typical di_(REC)M/dt vs.di_f/dt

HFA08TB120

Bulletin PD-2.383 rev. C 11/00

Reverse Recovery Circuit

= 200V

0.01

Ω

L = 70µH

D.U.T.

di /dt

difF/dt

ADJUST

IRFP250

Fig. 9- Reverse Recovery Parameter Test Circuit

0.5

di(rec)M/dt

RRM

0.75 I

RRM

di /dt

1. di /dt - Rate of change of current through zero

4. Q - Area under curve defined by t

crossing

and I

RRM

x I

RRM

2. I

- Peak reverse recovery current

RRM

3. t - Reverse recovery time measured from zero

5. di

/ dt - Peak rate of change of

(rec) M

crossing point of negative going I to point where

current during t portion of t

a line passing through 0.75 I

extrapolated to zero current

and 0.50 I

RRM

Fig. 10 - Reverse Recovery Waveform and Definitions

HFA08TB120

Bulletin PD-2.383 rev. C 11/00

Outline Table

Conforms to JEDEC Outline TO-220AB

Dimensions in millimeters and (inches)

Ordering Information Table

DeviceCode

08 TB 120

HexfredFamily

ProcessDesignator

= subs. elec. irrad.

= subs. Platinum

Current Rating

PackageOutline

VoltageRating

(08 = 8A)

(TB = TO-220, 2 Leads)

(120 = 1200V)

HFA08TB120

Bulletin PD-2.383 rev. C 11/00

WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.

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