HFA16PB120 [INFINEON]

Ultrafast, Soft Recovery Diode HEXFRED; 超快，软恢复二极管HEXFRED


型号：	HFA16PB120
厂家：	Infineon
描述：	Ultrafast, Soft Recovery Diode HEXFRED 超快，软恢复二极管HEXFRED 整流二极管局域网超快软恢复二极管快速软恢复二极管
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Bulletin PD -2.364 rev. B 11/00

HFA16PB120

Ultrafast,SoftRecoveryDiode

V_R= 1200V

HEXFRED

BASE

Features

CATHODE

• Ultrafast Recovery

• Ultrasoft Recovery

• Very Low I_RRM

V_F(typ.)* = 2.3V

I_F(AV)= 16A

Q_rr(typ.)=260nC

I_RRM(typ.) = 5.8A

• Very Low Q_rr

• Specified at Operating Conditions

Benefits

t_rr(typ.) = 30ns

di_(rec)M/dt (typ.)* = 76A/µs

• Reduced RFI and EMI

• Reduced Power Loss in Diode and Switching

Transistor

CATHODE

ANODE

• Higher Frequency Operation

• Reduced Snubbing

• Reduced Parts Count

Description

International Rectifier's HFA16PB120 is a state of the art ultra fast recovery

diode. Employing the latest in epitaxial construction and advanced processing

techniques it features a superb combination of characteristics which result in

performance which is unsurpassed by any rectifier previously available. With

basic ratings of 1200 volts and 16 amps continuous current, the HFA16PB120

is especially well suited for use as the companion diode for IGBTs and

MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line

features extremely low values of peak recovery current (I_RRM) and does not

TO-247AC(Modified)

exhibit any tendency to "snap-off" during the t_bportion of recovery. The

HEXFRED features combine to offer designers a rectifier with lower noise and

significantly lower switching losses in both the diode and the switching transistor.

These HEXFRED advantages can help to significantly reduce snubbing,

component count and heatsink sizes. The HEXFRED HFA16PB120 is ideally

suited for applications in power supplies and power conversion systems (such

as inverters), motor drives, and many other similar applications where high

speed, high efficiency is needed.

Absolute Maximum Ratings

Parameter

Max

1200

Units

V_R

Cathode-to-Anode Voltage

I_F@ T_C= 25°C

I_F@ T_C= 100°C

I_FSM

I_FRM

P_D@ T_C= 25°C

Continuous Forward Current

Single Pulse Forward Current

Maximum Repetitive Forward Current

Maximum Power Dissipation

190

151

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

T_STG

Operating Junction and

Storage Temperature Range

-55 to +150

°C

* 125°C

HFA16PB120

Bulletin PD-2.364 rev. A 11/00

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min Typ Max Units

Test Conditions

V_BR

V_FM

Cathode Anode Breakdown Voltage

1200

I_R= 100µA

I_F= 16A

I_F= 32A

2.5 3.0

3.2 3.93

2.3 2.7

0.75 20

375 2000

See Fig. 1

See Fig. 2

Max Forward Voltage

_F= 16A, T_J= 125°C

V_R= V_RRated

I_RM

Max Reverse Leakage Current

µA

T_J= 125°C, V_R= 0.8 x V_RRated_{D Rated}

See Fig. 3

V_R= 200V

Measured lead to lead 5mm from

package body

C_T

L_S

Junction Capacitance

Series Inductance

8.0

Dynamic Recovery Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Reverse Recovery Time

See Fig. 5, 10

Min Typ Max Units

Test Conditions

t_rr

I_F= 1.0A, di_f/dt = 200A/µs, V_R= 30V

t_rr1

90 135

164 245

ns T_J= 25°C

t_rr2

T_J= 125°C

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

I_F= 16A

V_R= 200V

I_RRM1

I_RRM2

Q_rr1

Q_rr2

Peak Recovery Current

See Fig. 6

Reverse Recovery Charge

See Fig. 7

5.8

8.3

260 675

680 1838

120

di_f/dt = 200A/µs

di_(rec)M/dt1 Peak Rate of Fall of Recovery Current

di_(rec)M/dt2 During t_b

A/µs

See Fig. 8

Thermal - Mechanical Characteristics

Parameter

Lead Temperature

Min

Typ

Max

300

0.83

Units

T_lead

°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Thermal Resistance, Case to Heat Sink

thJC

thJA

thCS

K/W

0.50

2.0

0.07

(oz)

Weight

6.0

5.0

Kg-cm

lbf•in

Mounting Torque

0.063 in. from Case (1.6mm) for 10 sec

Typical Socket Mount

Mounting Surface, Flat, Smooth and Greased

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HFA16PB120

Bulletin PD-2.364 rev. A 11/00

100

1000

100

= 150˚C

= 125˚C

25˚C

0.1

0.01

200

400

600

800

1000

1200

= 150˚C

= 125˚C

Reverse Current - V_R(V)

Fig. 2-TypicalReverseCurrentvs. Reverse

25˚C

Voltage

1000

100

= 25˚C

0.1

Fig. 1 - Maximum Forward Voltage Drop

100

1000

10000

vs.InstantaneousForwardCurrent

Reverse Current - V_R(V)

Fig. 3 - Typical Junction Capacitance vs.

ReverseVoltage

D = 0.50

D = 0.20

D = 0.10

D = 0.05

D = 0.02

D = 0.01

0.1

Single Pulse

(Thermal Resistance)

Notes:

1. Duty factor D = t1/ t 2

2. Peak T = Pdm x ZthJC + Tc

0.01

0.00001

0.0001

0.001

0.01

0.1

100

t₁, Rectangular Pulse Duration (sec)

Fig. 4 - Maximum Thermal Impedance Z_thjcCharacteristics

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HFA16PB120

Bulletin PD-2.364 rev. A 11/00

270

V _R= 200V

T _J= 125˚C

220

T _J

25˚C

If = 16 A

If = 8 A

If = 16 A

If = 8 A

170

120

V_R= 200V

T_J= 125˚C

T_J

= 25˚C

100

1000

di / dt (A/µs)

Fig. 6 - Typical Recovery Current vs. di_f/dt,

Fig. 5 - Typical Reverse Recovery vs. di_f/dt,

(perLeg)

10000

1600

V _R= 200V

T _J= 125˚C

V _R= 200V

T _J= 125˚C

1400

1200

1000

800

600

400

200

T _J

= 25˚C

T _J

= 25˚C

If = 16A

If = 8A

1000

100

If = 16A

If = 8A

100

1000

100

1000

di / dt (A/µs)

Fig. 7 - Typical Stored Charge vs. di_f/dt,

Fig. 8 - Typical di_(rec)M/dt vs. di_f/dt,

(perLeg)

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HFA16PB120

Bulletin PD-2.364 rev. A 11/00

REVERSE RECOVERY CIRCUIT

= 200V

0.5

RRM

di(rec)M/dt

Ω

0.01

0.75 I

RRM

L = 70µH

di /dt

D.U.T.

1. di_f/dt - Rate of change of current

through zero crossing

4. Q_rr- Area under curve defined by t_rr

and I_RRM

dif/dt

t_rrX I_RRM

ADJUST

IRFP250

2. I_RRM- Peak reverse recovery current

Q_rr=

3. trr - Reverse recovery time measured

from zero crossing point of negative

going I_Fto point where a line passing

through 0.75 I_RRMand 0.50 I_RRM

extrapolated to zero current

5. di_(rec)M/dt - Peak rate of change of

current during t_bportion of t_rr

Fig. 10 - Reverse Recovery Waveform and

Fig. 9 - Reverse Recovery Parameter Test

Definitions

Circuit

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HFA16PB120

Bulletin PD-2.364 rev. A 11/00

Conforms to JEDEC Outline TO-247AC(Modified)

Dimensions in millimeters and inches

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.

EUROPEANHEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.

IRCANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.

IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.

http://www.irf.com

Fax-On-Demand: +44 1883 733420

Data and specifications subject to change without notice.

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