HFA25TB60 [INFINEON]
Ultrafast, Soft Recovery Diode; 超快，软恢复二极管
| 型号： | HFA25TB60 |
| 厂家： | 
Infineon |
| 描述： | Ultrafast, Soft Recovery Diode |
| 文件： | 总6页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -2.339
HFA25TB60
Ultrafast, Soft Recovery Diode
HEXFREDTM
Features
VR = 600V
VF(typ.)* = 1.3V
IF(AV) = 25A
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
Very Low Qrr
Guaranteed Avalanche
Specified at Operating Conditions
Qrr (typ.)= 112nC
IRRM = 10A
Benefits
trr(typ.) = 23ns
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
di(rec)M/dt (typ.) = 250A/µs
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Description
International Rectifier's HFA25TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
TO-220AC
extremely low values of peak recovery current (IRRM) and does not exhibit any
tendency to "snap-off" during thetb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25TB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
Absolute Maximum Ratings
Parameter
Max.
Units
VR
Cathode-to-Anode Voltage
600
V
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
Continuous Forward Current
Continuous Forward Current
25
225
100
2.0
125
50
A
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Repetitive Avalanche Current
Maximum Power Dissipation
IFRM
IAR
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation
W
C
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
* 125°C
4/2/97
HFA25TB60
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VBR
VFM
Cathode Anode Breakdown Voltage
600
1.3 1.7
1.5 2.0
1.3 1.7
V
IR = 100µA
IF = 25A
IF = 50A
Max Forward Voltage
See Fig. 1
See Fig. 2
V
IF = 25A, TJ = 125°C
VR = VR Rated
1.5
20
IRM
Max Reverse Leakage Current
µA
600 2000
55 100
TJ = 125°C, VR = 0.8 x VR RatedD Rated
See Fig. 3
CT
LS
Junction Capacitance
Series Inductance
pF
nH
VR = 200V
Measured lead to lead 5mm from
package body
8.0
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
trr
Reverse Recovery Time
23
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
trr1
trr2
50
105 160
75
ns TJ = 25°C
TJ = 125°C
See Fig. 5, 6 & 16
IF = 25A
VR = 200V
IRRM1
IRRM2
Qrr1
Qrr2
Peak Recovery Current
See Fig. 7& 8
4.5
8.0
112 375
420 1200
250
160
10
15
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
A
Reverse Recovery Charge
See Fig. 9 & 10
nC
dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
di(rec)M/dt2 During tb
A/µs
See Fig. 11 & 12
Thermal - Mechanical Characteristics
Parameter
Lead Temperature
Min.
Typ.
0.5
Max.
300
1.0
Units
°C
T
lead
6.0
RθJC
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
K/W
RθJA
RθCS
80
12
2.0
g
(oz)
Wt
Weight
0.07
Kg-cm
lbfin
Mounting Torque
5.0
10
L=100µH, duty cycle limited by max TJ
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
HFA25TB60
100
10
1
10000
1000
100
10
T = 150°C
J
T = 125°C
J
1
T = 150°C
J
T = 25°C
J
T = 125°C
0.1
J
A
T = 25°C
0.01
J
0
100
200
300
400
500
600
Reverse Voltage - V (V)
R
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
1000
T = 25°C
J
100
A
0.6
1.0
1.4
1.8
2.2
2.6
Forward Voltage Drop - V
(V)
FM
A
10
Fig. 1 - Maximum Forward Voltage Drop
1
10
100
1000
vs. Instantaneous Forward Current
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
1
D = 0.50
0.20
P
DM
0.10
0.1
t
1
0.05
t
2
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2
2. PeakT = P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
HFA25TB60
140
30
25
20
15
10
5
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
120
100
I
I
I
= 50A
= 25A
= 10A
F
F
F
I
I
I
= 50A
= 25A
= 10A
F
80
60
40
20
F
F
A
A
0
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 6 - Typical Recovery Current vs. dif/dt
Fig. 5 - Typical Reverse Recovery vs. dif/dt
10000
1400
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
1200
1000
I
I
I
= 50A
= 25A
= 10A
F
F
F
800
600
400
200
0
I
I
I
= 50A
= 25A
= 10A
F
1000
F
F
A
A
100
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 7 - Typical Stored Charge vs. dif/dt
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
HFA25TB60
3
t
rr
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5 I
RRM
RRM
5
di(rec)M/dt
Ω
0.01
0.75 I
RRM
L = 70µH
1
di /dt
f
D.U.T.
4. Qrr - Area under curve defined by trr
1. dif/dt - Rate of change of current
through zero crossing
D
and IRRM
dif/dt
trr X IRRM
ADJUST
IRFP250
G
Qrr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
I
L = 100µH
L(PK)
HIGH-SPEED
SWITCH
DUT
FREE-WHEEL
DIODE
Rg = 25 ohm
+
CURRENT
MONITOR
DECAY
TIME
Vd = 50V
V
(AVAL)
V
R(RATED)
Fig. 11 - Avalanche Test Circuit and Waveforms
HFA25TB60
Conforms to JEDEC Outline TO-220AC
Dimensions in millimeters and inches
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
4/97
相关型号：
HFA25TB60STRL
Rectifier Diode, 1 Phase, 1 Element, 25A, 600V V(RRM), Silicon, SMD-220, D2PAK-3
VISHAY
HFA25TB60STRR
Rectifier Diode, 1 Phase, 1 Element, 25A, 600V V(RRM), Silicon, SMD-220, D2PAK-3
VISHAY
HFA25TB60STRRPBF
Rectifier Diode, 1 Phase, 1 Element, 25A, 600V V(RRM), Silicon, LEAD FREE, D2PAK-3
VISHAY
©2020 ICPDF网 联系我们和版权申明