HFA40HF60 [INFINEON]
Ultrafast, Soft Recovery Diode; 超快，软恢复二极管
| 型号： | HFA40HF60 |
| 厂家： | 
Infineon |
| 描述： | Ultrafast, Soft Recovery Diode |
| 文件： | 总5页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-20381
HFA40HF60
Ultrafast, Soft Recovery Diode
HEXFREDTM
(ISOLATED BASE)
VR = 600V
VF = 1.75V
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
Qrr = 290nC
• Surface Mount
di(rec)M/dt = 400A/µs
CATHODE
ANODE
Description
TM
HEXFRED diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems.
An extensive characterization of the recovery behavior
for different values of current, temperature and di/dt
simplifies the calculations of losses in the operating
conditions. The softness of the recovery eliminates the
need for a snubber in most applications. These devices
are ideally suited for power converters, motors drives and
other applications where switching losses are significant
portion of the total losses.
SMD-1
Absolute Maximum Ratings (per Leg)
Parameter
D.C. Reverse Voltage
Max.
600
Units
V
VR
IF @ TC = 100°C
Continuous Forward Current
22
A
IFSM @ TC = 25°C Single Pulse Forward Current
225
PD @ TC = 25°C
Maximum Power Dissipation
Operating Junction and
83
W
TJ
-55 to +150
°C
TSTG
Storage Temperature Range
Thermal - Mechanical Characteristics
Parameter
Junction-to-Case, Single Leg Conducting
Weight
Typ.
—
Max.
1.5
Units
RθJC
°C/W
g
2.4
—
Note: D.C. = 50% rect. wave
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
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1
6/30/99
HFA40HF60
Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VBR
VFM
Cathode Anode Breakdown Voltage
Max Forward Voltage
600
—
—
—
—
—
—
—
—
—
V
IR = 100µA
IF = 22A
1.63 1.75
2.07 2.25
1.52 1.64
V
IF = 45A
See Fig. 1
IF = 22A, TJ = 125°C
VR = VR Rated
IRM
Max Reverse Leakage Current
—
—
10
1.0
59
—
µA
See Fig. 2
See Fig. 3
mA TJ = 125°C, VR = 480V
pF VR = 200V
CT
LS
Junction Capacitance
Series Inductance
56
2.8
nH Measured from center of bond pad to
end of anode bonding wire
Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
trr1
Reverse Recovery Time
—
—
—
—
—
—
—
—
60
90
ns TJ = 25°C
TJ = 125°C
See Fig.
trr2
110 165
5.2 7.8
5
IF = 22A
IRRM1
IRRM2
Qrr1
Qrr2
Peak Recovery Current
TJ = 25°C
See Fig.
A
8.5
13
TJ = 125°C
6
VR = 200V
Reverse Recovery Charge
190 290
560 840
270 400
170 250
TJ = 25°C
See Fig.
nC
TJ = 125°C
7
See Fig.
8
dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
di(rec)M/dt2 During tb
TJ = 25°C
A/µs
TJ = 125°C
Legend:
1 - Cathode
2 - N/C
3 - Anode
IR Case Style SMD-1
2
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HFA40HF60
100
10
1
1000
100
T
= 150°C
= 125°C
J
T
J
10
1
0.1
T
=
=
25°C
J
0.01
0.001
0.0001
T
-55°C
J
0
200
400
600
R eve rse Voltage - V
(V)
R
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
1 0 0 0
T
T
T
= 150°C
= 125°C
J
J
J
T
= 25°C
J
1 0 0
=
25°C
0.0
1.0
2.0
3.0
4.0
Forward Voltage Drop - V
(V)
FM
Fig. 1 - Maximum Forward Voltage Drop
1 0
1
1 0
1 0 0
1 0 0 0
vs. Instantaneous Forward Current
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
1
D = 0.50
0.20
0.10
P
DM
0.05
0.1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
J
x
Z
+ T
thJC C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
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3
HFA40HF60
100
10
1
150
I
I
= 44A
= 22A
F
F
120
90
I
I
I
= 44A
= 22A
= 11A
F
F
F
I
= 11A
F
60
30
VR = 20 0V
TJ = 125 °C
TJ = 25°C
VR = 20 0V
TJ = 1 2 5°C
TJ = 2 5 °C
0
100
1000
100
1000
d i /dt - (A/µs)
f
d i /dt - (A/µs)
f
Fig. 5 - Typical Reverse Recovery vs. dif/dt
Fig. 6 - Typical Recovery Current vs. dif/dt
10000
2000
VR = 20 0V
TJ = 1 2 5°C
TJ = 2 5 °C
VR = 20 0V
TJ = 1 2 5°C
TJ = 2 5 °C
1600
I
I
= 44A
= 22A
= 11A
F
1200
800
400
0
F
F
I
1000
I
= 22A
F
I
= 11A
F
I
= 44A
F
100
100
100
1000
1000
di /dt - (A/µs)
f
d i /dt - (A/µs)
f
Fig. 7 - Typical Stored Charge vs. dif/dt
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
4
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HFA40HF60
3
t
rr
I
F
t
t
a
b
0
RE VERS E RECO VE RY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
I
R R M
R RM
5
d i(rec)M /dt
I
R R M
Ω
0.01
0.75
L
= 70µ H
1
di /dt
f
D .U .T.
4. Qrr - Area under curve defined by trr
1. dif/dt - Rate of change of current
through zero crossing
D
IR FP 250
and IRRM
dif/dt
trr X IRRM
A D JU S T
G
Qrr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
6/99
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5
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