IAUA250N08S5N018 [INFINEON]
The IAUA250N08S5N018 is a 1.8mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOSTM 5 technology. Next to others it is used in LED Lighting as well as 48V Auxiliaries like HVAC Compressors and Safety Switches.;
| 型号： | IAUA250N08S5N018 |
| 厂家： | 
Infineon |
| 描述： | The IAUA250N08S5N018 is a 1.8mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOSTM 5 technology. Next to others it is used in LED Lighting as well as 48V Auxiliaries like HVAC Compressors and Safety Switches. |
| 文件： | 总12页 (文件大小：2225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IAUA250N08S5N018
Automotive MOSFET
OptiMOS™-5 Power-Transistor
Features
• OptiMOS™ power MOSFET for automotive applications
• N-channel – Enhancement mode – Normal Level
• Extended qualification beyond AEC-Q101
• Enhanced electrical testing
1
1
• Robust design
• MSL3 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
1
2
3
4
5
Potential applications
General automotive applications.
Product validation
Qualified for automotive applications. Product validation according to AEC-Q101.
Product Summary
VDS
80
1.8
250
V
RDS(on)
mΩ
A
ID (Chip limited)
Type
Package
Marking
IAUA250N08S5N018
PG-HSOF-5-4
5N08018
Data Sheet
www.infineon.com/mosfets
Rev. 1.0
2021-03-17
Please read the Important Notice and Warnings at the end of this document
OptiMOS™ 5 Automotive Power MOSFET, 80 V
IAUA250N08S5N018
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline & footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
2
Data Sheet
2
Rev. 1.0
2021-03-17
OptiMOS™ 5 Automotive Power MOSFET, 80 V
IAUA250N08S5N018
Maximum ratings
at Tj=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
V GS=10 V, Chip limitation1)
V GS=10V, DC current
I D
250
250
35
A
Continuous drain current
T a=85 °C, V GS=10 V,
R thJA on 2s2p2,3)
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C, t p= 100 µs
813
340
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=125 A
mJ
A
I AS
250
-
V GS
±20
V
-
P tot
T j, T stg
-
T C=25 °C
238
W
°C
Power dissipation
-55 ... +175
55/175/56
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
Data Sheet
3
Rev. 1.0
3
2021-03-17
OptiMOS™ 5 Automotive Power MOSFET, 80 V
IAUA250N08S5N018
Thermal characteristics2)
Parameter
Values
typ.
-
Symbol
Conditions
Unit
min.
max.
R thJC
R thJA
Thermal resistance, junction - case
Thermal resistance,
junction - ambient3)
–
–
-
0.63 K/W
-
22.6
-
Electrical characteristics
at Tj=25 °C, unless otherwise specified
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V GS=0 V,
I D=1 mA
V (BR)DSS
V GS(th)
I DSS
80
2.2
-
-
3
-
3.8
1
V
V DS=V GS, I D=150 µA
V DS=80 V, V GS=0 V,
T j=25 °C
Zero gate voltage drain current
0.1
µA
V DS=80 V, V GS=0 V,
T j=100 °C2)
-
1
100
I GSS
V GS=20 V, V DS=0 V
V GS=6 V, I D=60 A
V GS=10 V, I D=100 A
-
Gate-source leakage current
-
-
-
-
-
100 nA
2.5 mΩ
1.8
RDS(on)
Drain-source on-state resistance
2.1
1.5
1.4
Gate resistance2)
R G
-
Ω
Data Sheet
4
Rev. 1.0
4
2021-03-17
OptiMOS™ 5 Automotive Power MOSFET, 80 V
IAUA250N08S5N018
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
C iss
C oss
Crss
t d(on)
t r
Input capacitance
-
-
-
-
-
-
-
6704
1156
47
8715 pF
1502
V GS=0 V, V DS=40 V,
f =1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
70
16
-
-
-
-
ns
11
V DD=40 V, V GS=10 V,
I D=100 A, R G=3.5 Ω
t d(off)
t f
Turn-off delay time
Fall time
32
23
Gate Charge Characteristics2)
Q gs
Gate to source charge
-
-
-
-
32
21
96
4.7
41
32
125
-
nC
V
Q gd
Gate to drain charge
Gate charge total
V DD=40 V, I D=100 A,
V GS=0 to 10 V
Q g
V plateau
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
I S
T C=25 °C
-
-
-
-
256
813
A
V
Diode pulse current2)
I S,pulse
T C=25 °C, t p= 100 µs
V GS=0 V, I F=100 A,
T j=25 °C
V SD
Diode forward voltage
-
0.9
1.2
Reverse recovery time2)
Reverse recovery charge2)
t rr
-
-
60
84
-
-
ns
V R=40 V, I F=50A,
di F/dt =100 A/µs
Q rr
nC
1) Practically the current is limited by the overall system design including the customer-specific PCB.
2) The parameter is not subject to production testing – specified by design.
3) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air.
Data Sheet
Rev. 1.0
5
5
2021-03-17
OptiMOS™ 5 Automotive Power MOSFET, 80 V
IAUA250N08S5N018
Electrical characteristics diagrams
1 Power dissipation
P tot = f(T C); V GS ≥ 6 V
300
2 Drain current
I D = f(T C); V GS ≥ 6 V
300
DC current
250
200
150
100
50
250
200
150
100
50
0
0
0
0
50
100
150
200
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; parameter: tp
Z thJC = f(t p); parameter: D=tp/T
100
1000
1 µs
0.5
10 µs
100 µs
1 ms
10-1
100
0.1
0.05
0.01
10
10-2
single pulse
10-3
1
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
tp [s]
VDS [V]
Data Sheet
6
6
Rev. 1.0
2021-03-17
OptiMOS™ 5 Automotive Power MOSFET, 80 V
IAUA250N08S5N018
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C; parameter: VGS
R DS(on) = f(I D); T j = 25 °C; parameter: VGS
6
1000
4.5 V
5.5
10 V
5
800
600
400
200
0
6.5 V
5 V
4.5
4
3.5
3
6 V
5.5 V
5.5 V
2.5
2
6 V
6.5 V
10 V
5 V
1.5
1
4.5 V
0
50
100
150
200
250
0
1
2
3
4
5
6
7
8
9
10
ID [A]
VDS [V]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V: parameter: Tj
R DS(on) = f(T j); parameter: ID, VGS
1000
800
600
400
200
0
4.1
3.9
3.7
3.5
3.3
3.1
2.9
-55 °C
25 °C
175 °C
VGS=6 V,
ID=60 A
2.7
2.5
2.3
2.1
1.9
VGS=10 V,
ID=100 A
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-60
-20
20
60
100
140
180
2.5
3.5
4.5
5.5
6.5
7.5
Tj [°C]
VGS [V]
Data Sheet
7
7
Rev. 1.0
2021-03-17
OptiMOS™ 5 Automotive Power MOSFET, 80 V
IAUA250N08S5N018
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS; parameter: I D
C = f(V DS); V GS = 0 V; f = 1 MHz
104
4
Ciss
3.5
103
102
101
1500 µA
3
2.5
2
Coss
150 µA
Crss
1.5
1
0
20
40
60
80
-60
-20
20
60
Tj [°C]
100
140
180
VDS [V]
11 Typical forward diode characteristics
12 Typ. avalanche characteristics
I F = f(V SD ); parameter: T j
I AS = f(t AV); parameter: T j(start)
103
1000
102
25 °C
25 °C
175 °C
100
100 °C
101
150 °C
100
10
0
0.2 0.4 0.6 0.8
VSD [V]
1
1.2 1.4 1.6
1
10
100
1000
tAV [µs]
Data Sheet
8
8
Rev. 1.0
2021-03-17
OptiMOS™ 5 Automotive Power MOSFET, 80 V
IAUA250N08S5N018
13 Typical avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j); parameter: ID
V BR(DSS) = f(T j); I D_typ = 1 mA
87
86
85
84
83
82
81
80
79
78
77
76
800
60 A
400
125 A
250 A
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 100 A pulsed; parameter: V DD
10
9
VGS
16 V
Q g
40 V
8
7
6
5
4
3
2
1
0
64 V
Qgate
Qgd
Qgs
0
40
Qgate [nC]
80
Data Sheet
9
9
Rev. 1.0
2021-03-17
OptiMOS™ 5 Automotive Power MOSFET, 80 V
IAUA250N08S5N018
Package Outline
Footprint
Packaging
Data Sheet
10
Rev. 1.0
2021-03-17
OptiMOS™ 5 Automotive Power MOSFET, 80 V
IAUA250N08S5N018
Revision History
Revision
Date
Changes
Revision 1.0
17.03.2021
Final Datasheet
Data Sheet
11
Rev. 1.0
11
2021-03-17
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-03-17
Published by
IMPORTANT NOTICE
The information given in this document shall in no event be For further information on technology, delivery terms and
regarded as a guarantee of conditions or characteristics conditions and prices, please contact the nearest Infineon
("Beschaffenheitsgarantie").
Infineon Technologies AG
81726 Munich, Germany
Technologies Office (www.infineon.com).
With respect to any examples, hints or any typical values
stated herein and/or any information regarding the
application of the product, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind,
including without limitation warranties of non-infringement of
intellectual property rights of any third party.
WARNINGS
© 2021 Infineon Technologies AG
All Rights Reserved.
Due to technical requirements products may contain
dangerous substances. For information on the types in
question please contact the nearest Infineon Technologies
Office.
In addition, any information given in this document is subject
to customer's compliance with its obligations stated in this
document and any applicable legal requirements, norms and
standards concerning customer's products and any use of the
product of Infineon Technologies in customer's applications.
The data contained in this document is exclusively intended
for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability
of the product for the intended application and the
completeness of the product information given in this
document with respect to such application.
Do you have any questions about any
aspect of this document?
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by authorized
representatives of
Infineon
Technologies, Infineon
Email: erratum@infineon.com
Technologies’ products may not be used in any applications
where a failure of the product or any consequences of the use
thereof can reasonably be expected to result in personal
injury.
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