IAUC100N04S6L014

更新时间:2024-10-30 05:41:14
品牌:INFINEON
描述:Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications.

IAUC100N04S6L014 概述

Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications.

IAUC100N04S6L014 数据手册

通过下载IAUC100N04S6L014数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

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IAUC100N04S6L014  
OptiMOS- 6 Power-Transistor  
Product Summary  
VDS  
40  
1.4  
100  
V
RDS(on),max  
ID  
mW  
A
Features  
PG-TDSON-8  
• OptiMOS™ - power MOSFET for automotive applications  
• N-channel - Enhancement mode - Logic Level  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
1
1
Type  
Package  
Marking  
IAUC100N04S6L014  
PG-TDSON-8  
6N04L014  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25°C, VGS=10V  
100  
100  
A
T C=100°C, VGS=10V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25°C  
400  
280  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=20A, R G,min=25W  
mJ  
A
I AS  
R G,min=25W  
20  
VGS  
-
±16  
V
Ptot  
T C=25°C  
Power dissipation  
100  
W
°C  
T j, T stg  
Operating and storage temperature  
-
-55 ... +175  
Rev. 1.0  
page 1  
2019-04-01  
IAUC100N04S6L014  
Values  
typ.  
Parameter  
Symbol  
Conditions  
Unit  
min.  
max.  
Thermal characteristics2)  
R thJC  
Thermal resistance, junction - case  
-
-
-
-
-
1.5  
50  
K/W  
Thermal resistance, junction -  
ambient  
6 cm2 cooling area3)  
R thJA  
Electrical characteristics, at T j=25 °C, unless otherwise specified  
Static characteristics  
V(BR)DSS VGS=0V, I D= 1mA  
VGS(th) VDS=VGS, I D=50µA  
Drain-source breakdown voltage  
Gate threshold voltage  
40  
-
-
V
1.2  
1.6  
2.0  
VDS=40V, VGS=0V,  
T j=25°C  
I DSS  
Zero gate voltage drain current  
-
-
-
-
1
µA  
VDS=40V, VGS=0V,  
T j=125°C2)  
12  
I GSS  
VGS=16V, VDS=0V  
Gate-source leakage current  
-
-
-
-
100 nA  
R DS(on) VGS=4.5V, I D=50A  
VGS=10V, I D=50A  
Drain-source on-state resistance  
1.52  
1.12  
2.00  
1.40  
mW  
Rev. 1.0  
page 2  
2019-04-01  
IAUC100N04S6L014  
Values  
typ.  
Parameter  
Symbol  
Conditions  
Unit  
min.  
max.  
Dynamic characteristics2)  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
C iss  
C oss  
Crss  
t d(on)  
t r  
-
-
-
-
-
-
-
3027  
835  
47  
5
3935 pF  
1086  
VGS=0V, VDS=25V,  
f =1MHz  
70  
-
-
-
-
ns  
3
VDD=20V, VGS=10V,  
I D=100A, R G=3.5W  
t d(off)  
t f  
Turn-off delay time  
Fall time  
25  
12  
Gate Charge Characteristics2)  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Q gs  
-
-
-
-
9.0  
9.4  
49  
12  
14  
65  
-
nC  
Q gd  
VDD=32V, I D=100A,  
VGS=0 to 10V  
Q g  
Vplateau  
Gate plateau voltage  
3.0  
V
A
Reverse Diode  
Diode continous forward current2)  
Diode pulse current2)  
I S  
-
-
-
-
100  
400  
T C=25°C  
I S,pulse  
VGS=0V, I F=50A,  
T j=25°C  
VSD  
Diode forward voltage  
-
-
0.8  
45  
1.1  
-
V
VR=20V, I F=50A,  
diF/dt =100A/µs  
Reverse recovery time2)  
Reverse recovery charge2)  
t rr  
ns  
Q rr  
-
38  
-
nC  
1) Current is limited by package; with an R thJC = 1.5 K/W the chip is able to carry 200 A at 25°C.  
2) The parameter is not subject to production test- verified by design/characterization.  
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
Rev. 1.0  
page 3  
2019-04-01  
IAUC100N04S6L014  
1 Power dissipation  
2 Drain current  
Ptot = f(T C); VGS = 10 V  
I D = f(T C); VGS = 10 V  
150  
100  
50  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
TC [°C]  
TC [°C]  
3 Safe operating area  
4 Max. transient thermal impedance  
Z thJC = f(t p)  
I D = f(VDS); T C = 25 °C; D = 0  
parameter: t p  
parameter: D =t p/T  
101  
1000  
100  
10  
1 µs  
10 µs  
100  
0.5  
0.1  
100 µs  
10-1  
0.05  
0.01  
150 µs  
10-2  
single pulse  
10-3  
1
0.1  
1
10  
100  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDS [V]  
tp [s]  
Rev. 1.0  
page 4  
2019-04-01  
IAUC100N04S6L014  
5 Typ. output characteristics  
I D = f(VDS); T j = 25 °C  
parameter: VGS  
6 Typ. drain-source on-state resistance  
R DS(on) = f(I D); T j = 25 °C  
parameter: VGS  
400  
12  
2.75 V  
360  
4.5 V  
10 V  
10  
320  
3 V  
280  
240  
200  
160  
120  
80  
3.5 V  
8
6
4
2
0
3.5 V  
3 V  
4.5 V  
40  
2.75 V  
10 V  
0
0
1
2
3
0
50  
100  
150  
200  
250  
300  
350  
VDS [V]  
ID [A]  
7 Typ. transfer characteristics  
I D = f(VGS); VDS = 6V  
parameter: T j  
8 Typ. drain-source on-state resistance  
R DS(on) = f(T j); I D = 50 A; VGS = 10 V  
400  
350  
300  
250  
200  
150  
2.25  
1.75  
1.25  
0.75  
0.25  
175 °C  
100  
25 °C  
50  
-55 °C  
0
1.5  
2
2.5  
VGS [V]  
3
3.5  
4
-60  
-20  
20  
60  
100  
140  
180  
Tj [°C]  
Rev. 1.0  
page 5  
2019-04-01  
IAUC100N04S6L014  
9 Typ. gate threshold voltage  
VGS(th) = f(T j); VGS = VDS  
parameter: I D  
10 Typ. capacitances  
C = f(VDS); VGS = 0 V; f = 1 MHz  
104  
2
Ciss  
500 µA  
1.5  
Coss  
103  
50 µA  
1
0.5  
0
Crss  
102  
101  
0
10  
20  
30  
-60  
-20  
20  
60  
Tj [°C]  
100  
140  
180  
VDS [V]  
11 Typical forward diode characteristicis  
12 Avalanche characteristics  
I A S= f(t AV  
IF = f(VSD)  
)
parameter: T j  
parameter: Tj(start)  
103  
100  
102  
25 °C  
100 °C  
10  
150 °C  
25 °C  
101  
175 °C  
100  
1
1
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
10  
100  
1000  
VSD [V]  
tAV [µs]  
Rev. 1.0  
page 6  
2019-04-01  
IAUC100N04S6L014  
13 Avalanche energy  
14 Drain-source breakdown voltage  
EAS = f(T j)  
VBR(DSS) = f(T j); I D = 1 mA  
44  
800  
700  
600  
500  
42  
40  
38  
400  
10 A  
300  
200  
20 A  
100  
0
-60  
-20  
20  
60  
100  
140  
180  
25  
75  
125  
175  
Tj [°C]  
Tj [°C]  
15 Typ. gate charge  
16 Gate charge waveforms  
VGS = f(Q gate); I D = 100 A pulsed  
parameter: VDD  
10  
9
8
7
6
5
4
3
2
1
0
V GS  
Qg  
8 V  
32 V  
V gs(th)  
Qg(th)  
Qsw  
Qgd  
Qgate  
Qgs  
0
10  
20  
30  
40  
50  
Qgate [nC]  
Rev. 1.0  
page 7  
2019-04-01  
IAUC100N04S6L014  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
© Infineon Technologies AG 2019  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions  
or characteristics. With respect to any examples or hints given herein, any typical values stated  
herein and/or any information regarding the application of the device, Infineon Technologies hereby  
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties  
of non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact  
the nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements, components may contain dangerous substances.  
For information on the types in question, please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the  
express written approval of Infineon Technologies, if a failure of such components can reasonably be  
expected to cause the failure of that life-support device or system or to affect the safety or  
effectiveness of that device or system. Life support devices or systems are intended to be implanted  
in the human body or to support and/or maintain and sustain and/or protect human life.  
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.  
Rev. 1.0  
page 8  
2019-04-01  
IAUC100N04S6L014  
Revision History  
Version  
Date  
Changes  
Rev. 1.0  
page 9  
2019-04-01  

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