IAUC100N08S5N031 [INFINEON]
车规级MOSFET;
| 型号： | IAUC100N08S5N031 |
| 厂家： | 
Infineon |
| 描述： | 车规级MOSFET |
| 文件： | 总10页 (文件大小：776K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IAUC100N08S5N031
OptiMOS™-5 Power-Transistor
Product Summary
VDS
RDS(on)
ID
80
3.1
100
V
mW
A
Features
• N-channel - Enhancement mode
PG-TDSON-8
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
1
1
Type
Package
Marking
PG-TDSON-8
5N08031
IAUC100N08S5N031
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current1)
I D
T C=25°C, VGS=10V
100
A
TC=100 °C,
VGS=10 V2)
100
Pulsed drain current2)
I D,pulse
EAS
I AS
T C=25 °C
400
250
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=50 A
mJ
A
-
100
VGS
Ptot
-
±20
V
T C=25 °C
Power dissipation
167
W
°C
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 1.0
page 1
2018-07-24
IAUC100N08S5N031
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
Thermal resistance, junction - case
-
-
-
0.9
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
VGS=0 V,
I D=1 mA
V(BR)DSS
Drain-source breakdown voltage
Gate threshold voltage
80
2.2
-
-
-
3.8
1
V
VGS(th) VDS=VGS, I D=95 µA
3.0
0.1
VDS=80 V, VGS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
µA
VDS=80 V, VGS=0 V,
T j=85 °C2)
-
1
20
I GSS
VGS=20 V, VDS=0 V
Gate-source leakage current
-
-
-
-
-
100 nA
RDS(on) VGS=6 V, I D=25 A
VGS=10 V, I D=50 A
R G
Drain-source on-state resistance
3.5
2.7
1.6
4.6
3.1
-
mΩ
Gate resistance2)
W
Rev. 1.0
page 2
2018-07-24
IAUC100N08S5N031
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
4250
700
32
5525 pF
910
VGS=0 V, VDS=40 V,
f =1 MHz
48
11
-
-
-
-
ns
6
VDD=40 V, VGS=10 V,
I D=100 A, R G=3.5 W
t d(off)
t f
Turn-off delay time
Fall time
21
15
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
20
14
59
4.4
26
21
76
-
nC
Q gd
VDD=40 V, I D=50 A,
VGS=0 to 10 V
Q g
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current1)
Diode pulse current2)
I S
-
-
-
-
100
400
T C=25 °C
I S,pulse
VGS=0 V, I F=50 A,
T j=25 °C
VSD
Diode forward voltage
-
0.9
1.2
V
Reverse recovery time2)
t rr
-
-
54
94
-
-
ns
VR=40 V, I F=50A,
diF/dt =100 A/µs
Reverse recovery charge2)
Q rr
nC
1) Current is limited by package; with an R thJC = 0.9K/W the chip is able to carry 165A at 25°C
2) Defined by design. Not subject to production test.
Rev. 1.0
page 3
2018-07-24
IAUC100N08S5N031
1 Power dissipation
2 Drain current
Ptot = f(T C); VGS ≥ 6 V
I D = f(T C); VGS ≥ 6 V
200
160
120
80
110
100
90
80
70
60
50
40
30
20
10
0
40
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
100
1000
100
10
1 µs
0.5
10 µs
100 µs
150 µs
10-1
10-2
10-3
0.1
0.05
0.01
single pulse
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2018-07-24
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
400
7 V
10 V
6.5 V
350
300
250
200
150
100
50
6 V
5.5 V
5 V
0
0
1
2
3
4
5
6
7
VDS [V]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
400
350
300
250
200
150
100
50
25 °C
175 °C
-55 °C
0
3
4
5
6
7
VGS [V]
Rev. 1.0
page 5
2018-07-24
IAUC100N08S5N031
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: VGS
6
5.5 V
5 V
6 V
5.5
5
4.5
4
6.5 V
7 V
3.5
3
10 V
2.5
0
50
100
150
200
ID [A]
250
300
350
400
8 Typ. drain-source on-state resistance
R DS(on) = f(T j)
parameter: VGS; I D
6.5
5.5
4.5
3.5
2.5
1.5
VGS=6 V,
ID=25 A
VGS=10 V,
ID=50 A
-60
-20
20
60
Tj [°C]
100
140
180
Rev. 1.0
page 6
2018-07-24
IAUC100N08S5N031
9 Typ. gate threshold voltage
VGS(th) = f(T j); VGS = VDS
parameter: I D
10 Typ. capacitances
C = f(VDS); VGS = 0 V; f = 1 MHz
104
4
3.5
3
Ciss
950 µA
103
102
101
Coss
95 µA
2.5
2
1.5
1
Crss
0
20
40
60
80
-60
-20
20
60
100
140
180
Tj [°C]
VDS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
I AS = f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
1000
102
100
25 °C
175 °C
25 °C
101
100 °C
150 °C
100
10
1
0
0.2
0.4
0.6
0.8
1
1.2
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 7
2018-07-24
IAUC100N08S5N031
13 Typical avalanche energy
EAS = f(T j)
14 Drain-source breakdown voltage
VBR(DSS) = f(T j); I D,typ = 1 mA
parameter: I D
87
86
85
84
83
82
81
80
79
78
77
76
500
25 A
375
250
50 A
125
100 A
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
VGS = f(Q gate); I D = 50 A pulsed
parameter: VDD
10
9
8
7
6
5
4
3
2
1
0
16 V
VGS
40 V
64 V
Qg
Qgate
Qgd
Qgs
0
25
50
75
Qgate [nC]
Rev. 1.0
page 8
2018-07-24
IAUC100N08S5N031
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2018
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 9
2018-07-24
IAUC100N08S5N031
Revision History
Version
Date
Changes
Final Data Sheet
Version 1.0
24.07.2018
Rev. 1.0
page 10
2018-07-24
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