IAUC120N04S6N009 [INFINEON]
车规级MOSFET;
| 型号： | IAUC120N04S6N009 |
| 厂家： | 
Infineon |
| 描述： | 车规级MOSFET |
| 文件： | 总9页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IAUC120N04S6N009
OptiMOS™- 6 Power-Transistor
Product Summary
VDS
40
0.9
120
V
RDS(on),max
ID
m
A
Features
PG-TDSON-8
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IAUC120N04S6N009
PG-TDSON-8
6N04N009
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current1)
I D
T C=25°C, VGS=10V
120
A
T C=100°C, VGS=10V2)
120
Pulsed drain current2)
I D,pulse
EAS
T C=25°C
480
400
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=60A, R G,min=25
mJ
A
I AS
R G,min=25
60
VGS
-
±20
V
Ptot
T C=25°C
Power dissipation
150
W
°C
T j, T stg
Operating and storage temperature
-
-55 ... +175
Rev. 1.0
page 1
2018-09-27
IAUC120N04S6N009
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
Thermal resistance, junction - case
-
-
-
-
-
1.0
50
K/W
Thermal resistance, junction -
ambient
6 cm2 cooling area3)
R thJA
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS VGS=0V, I D= 1mA
VGS(th) VDS=VGS, I D=90µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
2.2
2.8
3.4
VDS=40V, VGS=0V,
T j=25°C
I DSS
Zero gate voltage drain current
-
-
-
-
1
µA
V
DS=40V, VGS=0V,
100
T j=125°C2)
I GSS
VGS=20V, VDS=0V
Gate-source leakage current
-
-
-
-
-
100 nA
R DS(on) VGS=7V, I D=60A
Drain-source on-state resistance
0.95
0.75
0.9
1.1
0.9
-
m
V
GS=10V, I D=60A
Gate resistance2)
R G
Rev. 1.0
page 2
2018-09-27
IAUC120N04S6N009
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
5530
1550
108
10
7360 pF
2070
V
GS=0V, VDS=25V,
f =1MHz
125
-
-
-
-
ns
6
V
DD=20V, VGS=10V,
I D=120A, R G=3.5
t d(off)
t f
Turn-off delay time
Fall time
22
11
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
25
15
76
4.5
33
28
115
-
nC
Q gd
VDD=32V, I D=120A,
GS=0 to 10V
V
Q g
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
120
480
T C=25°C
I S,pulse
VGS=0V, I F=60A,
T j=25°C
VSD
Diode forward voltage
-
-
-
0.8
60
73
1.1
V
VR=20V, I F=120A,
diF/dt =100A/µs
Reverse recovery time2)
Reverse recovery charge2)
t rr
-
-
ns
nC
Q rr
1) Current is limited by package; with an R thJC = 1ꢀK/W the chip is able to carry 300ꢀA at 25ꢀ°C.
2) The parameter is not subject to production test- verified by design/characterization.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2018-09-27
IAUC120N04S6N009
1 Power dissipation
2 Drain current
P
tot = f(T C); VGS = 10 V
I D = f(T C); VGS = 10 V
140
120
100
80
150
100
50
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
101
1000
100
10
1 µs
10 µs
100
100 µs
0.5
150 µs
0.1
10-1
0.05
0.01
10-2
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2018-09-27
IAUC120N04S6N009
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: VGS
400
12
10 V
5.5 V
360
7 V
10
5 V
320
280
240
200
160
120
80
4.5 V
8
6
4
2
0
5 V
4.5 V
5.5 V
40
7 V
10 V
0
0
1
2
3
0
50 100 150 200 250 300 350 400
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 60 A; VGS = 10 V
500
400
300
1.6
1.4
1.2
1
200
175°C
0.8
0.6
0.4
100
25°C
-55°C
0
3
3.5
4
4.5
5
5.5
6
-60
-20
20
60
100
140
180
VGS [V]
Tj [°C]
Rev. 1.0
page 5
2018-09-27
IAUC120N04S6N009
9 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
10 Typ. capacitances
V
C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: I D
104
4
Ciss
3.5
3
Coss
900 µA
103
102
101
2.5
2
90 µA
Crss
1.5
1
0.5
-60
0
10
20
30
-20
20
60
Tj [°C]
100
140
180
VDS [V]
11 Typical forward diode characteristics
12 Avalanche characteristics
I A S= f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
100
25 °C
100 °C
150 °C
102
10
25 °C
175 °C
101
100
1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2018-09-27
IAUC120N04S6N009
13 Avalanche energy
14 Drain-source breakdown voltage
E
AS = f(T j)
VBR(DSS) = f(T j); I D = 1 mA
46
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
44
42
40
38
36
15 A
800
30 A
700
600
500
400
60 A
300
200
100
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
GS = f(Q gate); I D = 40 A pulsed
16 Gate charge waveforms
V
parameter: VDD
10
9
8
7
6
5
4
3
2
1
V GS
8 V
Q g
32 V
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
0
20
40
60
80
Qgate [nC]
Rev. 1.0
page 7
2018-09-27
IAUC120N04S6N009
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2018
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2018-09-27
IAUC120N04S6N009
Revision History
Version
Date
Changes
Final Data Sheet
Revision 1.0
2018-09-27
Rev. 1.0
page 9
2018-09-27
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