IAUC60N04S6N031H [INFINEON]

车规级MOSFET;


型号：	IAUC60N04S6N031H
厂家：	Infineon
描述：	车规级MOSFET
文件：	总10页 (文件大小：907K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IAUC60N04S6N031H

OptiMOS^™- 6 Power-Transistor

Product Summary

V_DS

3.1

R_DS(on),max

I_D

Features

PG-TDSON-8-56

• OptiMOS™ - power MOSFET for automotive applications

• Half-Bridge - N-channel - Enhancement mode - Normal Level

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

IAUC60N04S6N031H PG-TDSON-8-56 6N04N031

Maximum ratings per channel, at T _j=25 °C, unless otherwise specified

Package

Marking

Value

Parameter

Symbol

Conditions

V_GS=10V,

Chip Limitation^1,2)

V_GS=10V,

DC current³⁾

Unit

I _D

Drain current

113

T_a=85°C, V_GS=10V,

R_thJAon 2s2p^2,4)

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25°C, t _p=100µs

311

100

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=20A, R _g,min=25Ω

I _AS

R _g,min=25Ω

V_GS

±20

P_tot

T _C=25°C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.0

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IAUC60N04S6N031H

Values

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Thermal characteristics²⁾

R _thJC

Thermal resistance, junction - case

2.0

K/W

Thermal resistance,

junction - ambient⁴⁾

R _thJA

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V_(BR)DSSV_GS=0V, I _D= 1mA

V_GS(th)V_DS=V_GS, I _D=25µA

Drain-source breakdown voltage

Gate threshold voltage

2.2

2.6

3.0

V_DS=40V, V_GS=0V,

T _j=25°C

I _DSS

Zero gate voltage drain current

µA

V_DS=40V, V_GS=0V,

T _j=125°C²⁾

I _GSS

V_GS=20V, V_DS=0V

Gate-source leakage current

100 nA

R _DS(on)V_GS=7V, I _D=30A

V_GS=10V, I _D=30A

Drain-source on-state resistance

2.9

2.4

3.6

3.1

Rev. 1.0

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IAUC60N04S6N031H

Values

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Dynamic characteristics²⁾

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C _iss

C _oss

C_rss

t _d(on)

t _r

1479

452

1922 pF

588

V_GS=0V, V_DS=25V,

f =1MHz

V_DD=20V, V_GS=10V,

I _D=60A, R _G=3.5W

t _d(off)

t _f

Turn-off delay time

Fall time

Gate Charge Characteristics²⁾

Gate to source charge

Gate to drain charge

Gate charge total

Q _gs

6.5

4.8

8.4

7.1

Q _gd

V_DD=32V, I _D=60A,

V_GS=0 to 10V

Q _g

V_plateau

Gate plateau voltage

4.4

Reverse Diode

Diode continous forward current²⁾

Diode pulse current²⁾

I _S

T _C=25°C

I _S,pulse

T _C=25°C, t _p=100µs

355

V_GS=0V, I _F=30A,

T _j=25°C

V_SD

Diode forward voltage

Reverse recovery time²⁾

0.8

1.1

V_R=20V, I _F=50A,

di_F/dt =100A/µs

t _rr

Reverse recovery charge²⁾

Q _rr

Practically the current is limited by overall system design including customer specific PCB.

²⁾The parameter is not subject to production test - specified by design.

³⁾The product can operate at specified current based on best practice to minimize electromigration at the solder joint.

For rare events and inrush currents the value may be exceeded.

⁴⁾Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air.

Rev. 1.0

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IAUC60N04S6N031H

1 Power dissipation

2 Drain current

P_tot= f(T _C); V_GS= 10 V

I _D= f(T _C); V_GS= 10 V

100

120

100

Chip limit

DC current

100

150

200

100

150

200

T_C[°C]

3 Safe operating area

4 Max. transient thermal impedance

Z _thJC= f(t _p)

I _D= f(V_DS); T _C= 25 °C; D = 0

parameter: t _p

parameter: D =t _p/T

10¹

1000

100

1 µs

0.5

10 µs

10⁰

0.1

100 µs

0.05

10^-1

0.01

150 µs

single pulse

10^-2

10^-3

0.1

100

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V_DS[V]

t_p[s]

Rev. 1.0

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IAUC60N04S6N031H

5 Typ. output characteristics

I _D= f(V_DS); T _j= 25 °C

parameter: V_GS

6 Typ. drain-source on-state resistance

R _DS(on)= f(I _D); T _j= 25 °C

parameter: V_GS

300

280

10 V

260

7 V

5.5 V

4.5 V

240

220

200

180

160

140

120

100

5 V

5.0 V

5.5 V

4.5 V

7 V

10 V

20 40 60 80 100 120 140 160 180 200

V_DS[V]

I_D[A]

7 Typ. transfer characteristics

I _D= f(V_GS); V_DS= 6V

parameter: T _j

8 Typ. drain-source on-state resistance

R _DS(on)= f(T _j); I _D= 30 A; V_GS= 10 V

300

200

100

175 °C

25 °C

-55 °C

2.5

3.5

4.5

5.5

-60

-20

100

140

180

V_GS[V]

T_j[°C]

Rev. 1.0

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9 Typ. gate threshold voltage

V_GS(th)= f(T _j); V_GS= V_DS

parameter: I _D

10 Typ. capacitances

C = f(V_DS); V_GS= 0 V; f = 1 MHz

10⁴

3.5

Ciss

10³

250 µA

Coss

2.5

25 µA

1.5

10²

Crss

0.5

10¹

-60

-20

100

140

180

V_DS[V]

T_j[°C]

11 Typical forward diode characteristicis

12 Avalanche characteristics

I _{A S}= f(t _AV

IF = f(V_SD)

)

parameter: T _j

parameter: T_j(start)

10³

100

10²

25 °C

100 °C

150 °C

25 °C

175 °C

10¹

10⁰

0.2

0.4

0.6

0.8

1.2

1.4

100

1000

V_SD[V]

t_AV[µs]

Rev. 1.0

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13 Avalanche energy

14 Drain-source breakdown voltage

E_AS= f(T _j)

V_BR(DSS)= f(T _j); I _D= 1 mA

500

400

5 A

300

200

10 A

100

20 A

-60

-20

100

140

180

125

175

T_j[°C]

15 Typ. gate charge

16 Gate charge waveforms

V_GS= f(Q _gate); I _D= 40 A pulsed

parameter: V_DD

V _GS

8 V

Q_g

32 V

V _gs(th)

Q_g(th)

Q_sw

Q_gd

Q_gate

Q_gs

Q_gate[nC]

Rev. 1.0

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IAUC60N04S6N031H

PG-TDSON-8: Outline

Footprint

Dimensions in mm

Packaging

Rev. 1.0

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IAUC60N04S6N031H

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions

or characteristics. With respect to any examples or hints given herein, any typical values stated

herein and/or any information regarding the application of the device, Infineon Technologies hereby

disclaims any and all warranties and liabilities of any kind, including without limitation, warranties

of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact

the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with the

express written approval of Infineon Technologies, if a failure of such components can reasonably be

expected to cause the failure of that life-support device or system or to affect the safety or

effectiveness of that device or system. Life support devices or systems are intended to be implanted

in the human body or to support and/or maintain and sustain and/or protect human life.

If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.0

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2020-09-22

IAUC60N04S6N031H

Revision History

Version

Revision 1.0

Date

Changes

22.09.2020 Final Data Sheet

Rev. 1.0

page 10

2020-09-22

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