IAUC60N06S5N074 [INFINEON]
The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard Single SS08 (5x6mm2) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction and switching losses;
| 型号： | IAUC60N06S5N074 |
| 厂家： | 
Infineon |
| 描述： | The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard Single SS08 (5x6mm2) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction and switching losses 栅 |
| 文件： | 总12页 (文件大小：780K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IAUC60N06S5N074
Automotive MOSFET
OptiMOS™-5 Power-Transistor
PG-TDSON-8-33
Features
• OptiMOS™ power MOSFET for automotive applications
• N-channel – Enhancement mode – Normal Level
• Extended qualification beyond AEC-Q101
• Enhanced electrical testing
• Robust design
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
8
1
7
2
6
5
4
Potential applications
General automotive applications.
3
Product validation
Qualified for automotive applications. Product validation according to AEC-Q101.
Product Summary
VDS
60
7.4
60
V
RDS(on)
mΩ
A
ID (chip limited)
Type
Package
Marking
IAUC60N06S5N074
PG-TDSON-8-33
5N06N074
Data Sheet
Rev. 1.1
Please read the Important Notice and Warnings at the end of this document
www.infineon.com/mosfets
2022-02-14
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUC60N06S5N074
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline & footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
2
Data Sheet
2
Rev. 1.1
2022-02-14
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUC60N06S5N074
Maximum ratings
at Tj=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
V GS=10 V, Chip limitation1,2)
V GS=10V, DC current
I D
60
60
15
A
Continuous drain current
T a=85 °C, V GS=10 V, R thJA on
2s2p2,4)
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C, t p= 100 µs
168
40
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=30 A
mJ
A
I AS
60
–
V GS
±20
V
–
P tot
T j, T stg
–
T C=25 °C
52
W
°C
Power dissipation
-55 ... +175
55/175/56
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
–
–
Data Sheet
3
Rev. 1.1
3
2022-02-14
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUC60N06S5N074
Thermal characteristics2)
Parameter
Values
typ.
–
Symbol
Conditions
Unit
min.
max.
R thJC
R thJA
Thermal resistance, junction - case
Thermal resistance,
junction - ambient4)
–
–
2.9 K/W
–
–
24.8
–
Electrical characteristics
at Tj=25 °C, unless otherwise specified
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V GS=0 V,
I D=1 mA
V (BR)DSS
V GS(th)
I DSS
60
2.2
–
–
2.8
–
–
3.4
1
V
V DS=V GS, I D=19 µA
V DS=60 V, V GS=0 V, T j=25 °C
Zero gate voltage drain current
µA
V DS=60 V, V GS=0 V,
T j=100 °C2)
–
–
100
I GSS
V GS=20 V, V DS=0 V
V GS=7 V, I D=15 A
V GS=10 V, I D=30 A
–
Gate-source leakage current
–
–
–
–
–
100 nA
9.0 mΩ
7.4
RDS(on)
Drain-source on-state resistance
7.5
6.0
1.3
Gate resistance2)
R G
–
Ω
Data Sheet
4
Rev. 1.1
4
2022-02-14
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUC60N06S5N074
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
C iss
C oss
C rss
t d(on)
t r
Input capacitance
–
–
–
–
–
–
–
1124
284
14
1461 pF
369
V GS=0 V, V DS=30 V, f =1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
21
3.7
2.3
5.4
3.0
–
–
–
–
ns
V DD=30 V, V GS=10 V, I D=30 A,
R G=3.5 Ω
t d(off)
t f
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Q gs
Gate to source charge
–
–
–
–
5.0
2.9
6.5 nC
4.3
Q gd
Gate to drain charge
Gate charge total
V DD=30 V, I D=30 A,
V GS=0 to 10 V
Q g
15.4
4.6
20.0
V plateau
Gate plateau voltage
–
V
Reverse Diode
Diode continous forward current2)
I S
T C=25 °C
–
–
–
–
60
A
V
Diode pulse current2)
I S,pulse
T C=25 °C, t p= 100 µs
168
V SD
V GS=0 V, I F=30 A, T j=25 °C
Diode forward voltage
–
0.8
1.1
Reverse recovery time2)
Reverse recovery charge2)
t rr
–
–
27
–
–
ns
V R=30 V, I F=50 A,
di F/dt =100 A/µs
Q rr
16.8
nC
1) Practically the current is limited by the overall system design including the customer-specific PCB.
2) The parameter is not subject to production testing – specified by design.
3) Current is limited by the package.
4) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air.
Data Sheet
Rev. 1.1
5
5
2022-02-14
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUC60N06S5N074
Electrical characteristics diagrams
1 Power dissipation
P tot = f(T C); V GS = 10 V
60
2 Drain current
I D = f(T C); V GS = 10 V
70
60
50
40
30
20
10
50
40
30
20
10
0
DC current
0
0
0
50
100
150
200
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; parameter: tp
Z thJC = f(t p); parameter: D=tp/T
101
1000
1 µs
0.5
10 µs
100
100
100 µs
150 µs
0.1
0.05
10
10-1
0.01
single pulse
10-2
1
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
tp [s]
VDS [V]
Data Sheet
6
6
Rev. 1.1
2022-02-14
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUC60N06S5N074
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C; parameter: VGS
R DS(on) = f(I D); T j = 25 °C; parameter: VGS
50
240
10 V
220
200
40
5 V
180
7 V
5.5 V
160
140
120
30
6 V
100
20
10
0
6 V
80
60
5.5 V
7 V
10 V
40
5 V
20
0
0
50
100
150
0
1
2
3
4
5
6
ID [A]
VDS [V]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V: parameter: Tj
R DS(on) = f(T j); parameter: ID, VGS
200
150
100
50
15
-55 °C
25 °C
175 °C
10
VGS=7 V, ID=15 A
VGS=10 V, ID=30 A
5
0
0
-60
-20
20
60
100
140
180
2
4
6
8
Tj [°C]
VGS [V]
Data Sheet
7
7
Rev. 1.1
2022-02-14
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUC60N06S5N074
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS; parameter: I D
C = f(V DS); V GS = 0 V; f = 1 MHz
104
3.5
3.25
3
Ciss
103
102
101
190 µA
2.75
Coss
19 µA
2.5
2.25
2
Crss
1.75
1.5
0
20
40
60
-60
-20
20
60
100
140
180
Tj [°C]
VDS [V]
11 Typical forward diode characteristics
12 Typ. avalanche characteristics
I F = f(V SD ); parameter: T j
I AS = f(t AV); parameter: T j(start)
103
100
25 °C
100 °C
102
150 °C
10
175 °C
25 °C
101
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
1
10
100
1000
VSD [V]
tAV [µs]
Data Sheet
8
8
Rev. 1.1
2022-02-14
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUC60N06S5N074
13 Typical avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j); parameter: ID
V BR(DSS) = f(T j); I D_typ = 1 mA
66
100
64
62
60
58
56
80
15 A
60
40
30 A
60 A
20
0
-55
-15
25
65
105
145
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 30 A pulsed; parameter: V DD
10
9
VGS
12 V
Q g
8
40 V
7
48 V
6
5
4
3
2
1
0
Qgate
Qgd
Qgs
0
2
4
6
8
10 12 14 16 18
Qgate [nC]
Data Sheet
9
9
Rev. 1.1
2022-02-14
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUC60N06S5N074
Package Outline
Footprint
Packaging
Data Sheet
10
Rev. 1.1
2022-02-14
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUC60N06S5N074
Revision History
Revision
Date
Changes
Revision 1.0
Revision 1.1
04.05.2021
14.02.2022
final data sheet
update image of pin layout (page 1)
Data Sheet
11
Rev. 1.1
2022-02-14
11
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-05-04
Published by
IMPORTANT NOTICE
The information given in this document shall in no event be For further information on technology, delivery terms and
regarded as
a guarantee of conditions or characteristics conditions and prices, please contact the nearest Infineon
Infineon Technologies AG
81726 Munich, Germany
("Beschaffenheitsgarantie").
Technologies Office (www.infineon.com).
With respect to any examples, hints or any typical values
stated herein and/or any information regarding the
application of the product, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind,
including without limitation warranties of non-infringement of
intellectual property rights of any third party.
WARNINGS
© 2021 Infineon Technologies AG
All Rights Reserved.
Due to technical requirements products may contain
dangerous substances. For information on the types in
question please contact the nearest Infineon Technologies
Office.
In addition, any information given in this document is subject
to customer's compliance with its obligations stated in this
document and any applicable legal requirements, norms and
standards concerning customer's products and any use of the
product of Infineon Technologies in customer's applications.
The data contained in this document is exclusively intended
for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability
of the product for the intended application and the
completeness of the product information given in this
document with respect to such application.
Do you have any questions about any
aspect of this document?
Except as otherwise explicitly approved by Infineon
Technologies in
a
written document signed by authorized
representatives of
Infineon Technologies, Infineon
Email: erratum@infineon.com
Technologies’ products may not be used in any applications
where a failure of the product or any consequences of the use
thereof can reasonably be expected to result in personal
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