IAUT300N10S5N015 [INFINEON]
车规级MOSFET;
| 型号： | IAUT300N10S5N015 |
| 厂家： | 
Infineon |
| 描述： | 车规级MOSFET |
| 文件： | 总9页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IAUT300N10S5N015
OptiMOS™-5 Power-Transistor
Product Summary
VDS
RDS(on)
ID
100
1.5
V
m
A
300
Features
P/G-HSOF-8-1
• N-channel - Enhancement mode
Tab
Tab
• AEC qualified
8
1
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
1
8
• 100% Avalanche tested
Type
Package
Marking
IAUT300N10S5N015 P/G-HSOF-8-1
5N10015
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T C=25°C, VGS=10V1)
I D
Continuous drain current
300
A
T C=100 °C,
247
V
GS=10 V2)
Pulsed drain current2)
I D,pulse
EAS
I AS
T C=25 °C
1200
652
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=150 A
mJ
A
-
300
VGS
Ptot
-
±20
V
T C=25 °C
Power dissipation
375
W
°C
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 1.0
page 1
2017-10-02
IAUT300N10S5N015
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
Thermal resistance, junction - case
-
-
-
0.4
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
VGS=0 V,
I D=1 mA
V(BR)DSS
Drain-source breakdown voltage
Gate threshold voltage
100
2.2
-
-
-
3.8
1
V
VGS(th) VDS=VGS, I D=275 µA
3.0
0.1
VDS=100 V, VGS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
µA
V
DS=50 V, VGS=0 V,
-
1
20
T j=85 °C2)
I GSS
VGS=20 V, VDS=0 V
Gate-source leakage current
-
-
-
-
100 nA
RDS(on) VGS=6 V, I D=75 A
Drain-source on-state resistance
1.6
1.3
2.0
1.5
mΩ
V
GS=10 V, I D=100 A
Rev. 1.0
page 2
2017-10-02
IAUT300N10S5N015
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
12316
1920
84
16011 pF
2496
V
GS=0 V, VDS=50 V,
f =1 MHz
126
29
-
-
-
-
ns
15
V
DD=50 V, VGS=10 V,
I D=100 A, R G=3.5
t d(off)
t f
Turn-off delay time
Fall time
70
48
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
52
33
68
50
216
-
nC
Q gd
VDD=50 V, I D=100 A,
GS=0 to 10 V
V
Q g
166
4.4
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
300
T C=25 °C
I S,pulse
1200
VGS=0 V, I F=100 A,
T j=25 °C
VSD
Diode forward voltage
-
0.9
1.3
V
Reverse recovery time2)
t rr
-
-
90
-
-
ns
VR=50 V, I F=50A,
diF/dt =100 A/µs
Reverse recovery charge2)
Q rr
220
nC
1) Current is limited by electromigration; with an R thJC = 0.4 K/W the chip is able to carry 350A at 25°C.
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2017-10-02
IAUT300N10S5N015
1 Power dissipation
2 Drain current
P
tot = f(T C); VGS ≥ 6 V
I D = f(T C); VGS ≥ 6 V
400
350
300
250
200
150
100
50
300
200
100
0
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
100
10000
1000
100
10
1 µs
0.5
10 µs
10-1
100 µs
0.1
1 ms
0.05
10-2
0.01
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2017-10-02
IAUT300N10S5N015
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: VGS
2.2
1200
7 V
10 V
5 V
6.5 V
1000
800
600
400
200
0
2
6 V
1.8
1.6
1.4
1.2
5.5 V
5.5 V
6 V
6.5 V
7 V
5 V
10 V
0
50
100
150
0
1
2
3
4
5
6
7
ID [A]
VDS [V]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; VGS = 10 V
1200
1000
800
600
400
200
0
2.8
2.6
2.4
2.2
2
-55 °C
25 °C
175 °C
1.8
1.6
1.4
1.2
1
0.8
-60
-20
20
60
100
140
180
2
4
6
8
VGS [V]
Tj [°C]
Rev. 1.0
page 5
2017-10-02
IAUT300N10S5N015
9 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
10 Typ. capacitances
V
C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: I D
105
4
3.5
3
104
103
102
Ciss
2750 µA
275 µA
2.5
2
Coss
1.5
Crss
1
0
25
50
75
100
-60
-20
20
60
Tj [°C]
100
140
180
VDS [V]
11 Typical forward diode characteristics
12 Typ. avalanche characteristics
I AS = f(t AV
I F = f(VSD)
)
parameter: T j
parameter: Tj(start)
104
1000
103
25 °C
100 °C
102
100
175 °C
150 °C
25 °C
101
100
10
1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2017-10-02
IAUT300N10S5N015
13 Typical avalanche energy
AS = f(T j)
14 Drain-source breakdown voltage
E
VBR(DSS) = f(T j); I D_typ = 1 mA
parameter: I D
110
109
108
107
106
105
104
103
102
101
100
99
1600
75 A
1200
800
400
0
150 A
300 A
98
97
96
95
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
GS = f(Q gate); I D = 100 A pulsed
16 Gate charge waveforms
V
parameter: VDD
10
9
8
7
6
5
4
3
2
1
VGS
20 V 50 V
80 V
Qg
Qgate
Qgd
Qgs
20 V
0
0
40
80
120
160
Qgate [nC]
Rev. 1.0
page 7
2017-10-02
IAUT300N10S5N015
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2017
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2017-10-02
IAUT300N10S5N015
Revision History
Version
Date
Changes
2017-10-02 Final Data Sheet
Version 1.0
Rev. 1.0
page 9
2017-10-02
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