IAUZ40N08S5N100 [INFINEON]
车规级MOSFET;
| 型号： | IAUZ40N08S5N100 |
| 厂家： | 
Infineon |
| 描述： | 车规级MOSFET |
| 文件： | 总9页 (文件大小：826K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IAUZ40N08S5N100
OptiMOS™-5 Power-Transistor
Product Summary
VDS
RDS(on)
ID
80
10
40
V
Features
mW
A
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode - Normal Level
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
PG-TSDSON-8
• Green product (RoHS compliant)
• 100% Avalanche tested
1
Quality Features
• Infineon Automotive Quality
1
• Extended qualification beyond AEC Q101
• Enhanced testing
• Advanced adhesion against delamination
• Complementary testing for board level reliability
Type
Package
Marking
PG-TSDSON-8
5N08100
IAUZ40N08S5N100
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T C=25°C,VGS=10V1)
I D
Continous drain current
40
40
A
T C=100 °C,
VGS=10 V2)
Pulsed drain current2)
I D,pulse
EAS
I AS
T C=25°C
160
75
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=20 A
mJ
A
-
32
VGS
Ptot
-
±20
V
T C=25 °C
Power dissipation
68
W
°C
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 1.0
page 1
2019-09-16
IAUZ40N08S5N100
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
Thermal resistance, junction - case
-
-
-
-
2.2
-
K/W
Thermal resistance,
junction - ambient3)
RthJA
38.5
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS VGS=0 V, I D=1 mA
VGS(th) VDS=VGS, I D=27 µA
Drain-source breakdown voltage
Gate threshold voltage
80
-
-
V
2.2
3
3.8
VDS=80 V, VGS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
-
-
1
µA
VDS=80 V, VGS=0 V,
T j=85 °C2)
100
I GSS
VGS=20 V, VDS=0 V
Gate-source leakage current
-
-
-
-
-
100 nA
14.5 mΩ
10
RDS(on) VGS=6 V, I D=10 A
VGS=10 V, I D=20 A
R G
Drain-source on-state resistance
11.6
8.4
1.2
Gate resistance2)
-
W
IAUZ40N08S5N100
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
1224
231
13.5
3
1591 pF
300
VGS=0 V, VDS=40 V,
f =1 MHz
20
-
-
-
-
ns
1
VDD=40 V, VGS=10 V,
I D=40 A, R G=3.5 W
t d(off)
t f
Turn-off delay time
Fall time
7
5
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
5.8
4.5
7.5
6.8
24.2
-
nC
Q gd
VDD=40 V, I D=20 A,
VGS=0 to 10 V
Q g
18.6
4.8
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
40
T C=25 °C
I S,pulse
147
VGS=0 V, I F=20 A,
T j=25 °C
VSD
Diode forward voltage
-
0.9
1.2
V
Reverse recovery time2)
t rr
-
-
37
32
-
-
ns
VR=40 V, I F=40A,
diF/dt =100 A/µs
Reverse recovery charge2)
Q rr
nC
1) Current is limited by bondwire; with an R thJC = 2.2 K/W the chip is able to carry 58A at 25°C.
2) The parameter is not subject to production test - verified by design/chracterization.
3) Device on four layer 2s2p PCB defined in accordance with JEDEC standards (JESD51-5-7).
PCB is vertical in still air.
Rev. 1.0
page 3
2019-09-16
IAUZ40N08S5N100
1 Power dissipation
2 Drain current
Ptot = f(T C); VGS ≥ 6 V
I D = f(T C); VGS ≥ 6 V
80
70
60
50
40
30
20
10
0
45
40
35
30
25
20
15
10
5
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
101
1000
100
10
1 µs
0.5
10 µs
100
100 µs
0.1
150 µs
0.05
10-1
0.01
single pulse
10-2
1
10-6
10-5
10-4
10-3
10-2
10-1 100
0.1
1
10
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2019-09-16
IAUZ40N08S5N100
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: VGS
25
300
10 V
23
5.5 V
5 V
250
6 V
21
6.5 V
19
17
15
13
11
9
200
150
100
50
7 V
6.5 V
6 V
5.5 V
5 V
10 V
7
5
0
0
50
100
150
200
250
0
1
2
3
4
5
6
7
ID [A]
VDS [V]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 20 A; VGS = 10 V
300
250
200
150
100
50
18
16
14
12
10
8
-55 °C
25 °C
175 °C
6
4
0
-60
-20
20
60
100
140
180
2
3
4
5
6
7
Tj [°C]
VGS [V]
Rev. 1.0
page 5
2019-09-16
IAUZ40N08S5N100
9 Typ. gate threshold voltage
VGS(th) = f(T j); VGS = VDS
parameter: I D
10 Typ. capacitances
C = f(VDS); VGS = 0 V; f = 1 MHz
104
4
3.5
3
Ciss
270 µA
103
102
101
27 µA
2.5
Coss
2
1.5
1
Crss
0
20
40
60
80
-60
-20
20
60
100
140
180
Tj [°C]
VDS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
I AS = f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
100
102
25 °C
175 °C
25 °C
100 °C
10
150 °C
101
100
1
1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2019-09-16
IAUZ40N08S5N100
13 Typical avalanche energy
EAS = f(T j)
14 Drain-source breakdown voltage
VBR(DSS) = f(T j); I D_typ = 1 mA
parameter: I D
87
86
85
84
83
82
81
80
79
78
77
76
160
140
10 A
120
100
80
20 A
60
40
32 A
20
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
VGS = f(Q gate); I D = 20 A pulsed
parameter: VDD
10
9
8
7
6
5
4
3
2
1
0
VGS
16 V
64 V
40 V
Qg
Qgate
Qgd
Qgs
0
5
10
15
20
Qgate [nC]
Rev. 1.0
page 7
2019-09-16
IAUZ40N08S5N100
PG-TSDSON-8: Outline
Footprint
Dimensions in mm
Packaging
Rev. 1.0
page 8
2019-09-16
IAUZ40N08S5N100
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 2019
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 9
2019-09-16
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