ICE3RBR1765JZ [INFINEON]
离线 SMPS 电流模式控制器 IC 配备集成 650V CoolMOS™ 和 启动单元 DIP-7 封装。它具有更坚固的设计，可在 -40°C 的温度下工作。出色的性能包括 BICMOS 技术，有源突发模式，内置频率抖动，软栅极驱动，传播延迟补偿，内置软启动时间，内置消隐时间和可延长消隐时间，用于过载保护，外部自动重启启用功能。 适配器、充电器、蓝光、DVD 播放器, 机顶盒, 数码相框以及辅助电源适用于 服务器, 电脑、打印机, 电视、 家庭影院/音响系统, 白色家电 等.;
| 型号： | ICE3RBR1765JZ |
| 厂家： | 
Infineon |
| 描述： | 离线 SMPS 电流模式控制器 IC 配备集成 650V CoolMOS™ 和 启动单元 DIP-7 封装。它具有更坚固的设计，可在 -40°C 的温度下工作。出色的性能包括 BICMOS 技术，有源突发模式，内置频率抖动，软栅极驱动，传播延迟补偿，内置软启动时间，内置消隐时间和可延长消隐时间，用于过载保护，外部自动重启启用功能。 适配器、充电器、蓝光、DVD 播放器, 机顶盒, 数码相框以及辅助电源适用于 服务器, 电脑、打印机, 电视、 家庭影院/音响系统, 白色家电 等. 栅极驱动 控制器 DVD 服务器 信息通信管理 软启动 电脑 过载保护 电视 |
| 文件： | 总31页 (文件大小：659K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Version 2.0, 7 Jun 2013
CoolSET®-F3R
ICE3RBR1765JZ
Off-Line SMPS Current Mode
Controller with integrated 650V
CoolMOS® and Startup cell
(frequency jitter Mode) in DIP-7
Power Management & Supply
N e v e r s t o p t h i n k i n g .
ICE3RBR1765JZ
Revision History:
2013-6-7
Version 2.0
Previous Version: 0.0
Page
3
Subjects (major changes since last revision)
add applications
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or
the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://
www.infineon.com
CoolMOS®, CoolSET® are trademarks of Infineon Technologies AG.
Edition 2013-6-7
Published by
Infineon Technologies AG,
81726 Munich, Germany,
© 2013 Infineon Technologies AG.
All Rights Reserved.
Legal disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
ICE3RBR1765JZ
Off-Line SMPS Current Mode Controller with
integrated 650V CoolMOS® and Startup cell
(frequency jitter Mode) in DIP-7
Product Highlights
•
Active Burst Mode to reach the lowest Standby Power
Requirements < 50mW
•
•
•
•
•
•
•
•
Auto Restart protection for overload, overtemperature, overvoltage
External auto-restart enable function
P
PG-DIP-7
Built-in soft start and blanking window
Extendable blanking Window for high load jumps
Built-in frequency jitter and soft driving for low EMI
Low Operating temperature down to -40°C
Green Mould Compound
Pb-free lead plating; RoHS compliant
Features
Description
•
650V avalanche rugged CoolMOS® with built-in
ICE3RBR1765JZ (ICE3RBRxx65JZ series) is modified
from ICE3BRxx65J in DIP-7 package. It has more robust
design and can work to -40°C. The outstanding
performance includes BiCMOS technology, active burst
mode, built-in frequency jitter, soft gate driving,
propagation delay compensation, built-in soft start time,
built-in blanking time and extendable blanking time for
over load protection, external auto-restart enable feature,
etc.
Startup Cell
•
•
•
•
Active Burst Mode for lowest Standby Power
Fast load jump response in Active Burst Mode
65kHz internally fixed switching frequency
Auto Restart Protection Mode for Overload, Open
Loop, VCC Undervoltage, Overtemperature &
Overvoltage
•
•
Built-in Soft Start
Built-in blanking window with extendable blanking
time for short duration high current
External auto-restart enable pin
Applications
•
•
•
•
•
•
•
•
Adapter/Charger
Blue Ray/DVD player, Set-top Box, Digital Photo
Frame
Max Duty Cycle 75%
Overall tolerance of Current Limiting < ±5%
Internal PWM Leading Edge Blanking
BiCMOS technology provide wide VCC range
Built-in Frequency jitter and soft driving for low EMI
•
Auxiliary power supply for Server, PC, Printer, TV,
Home theater/Audio System, White Goods, etc
Typical Application
+
Converter
Snubber
CBulk
DC Output
85 ... 270 VAC
-
CVCC
VCC
Drain
Startup Cell
Power Management
PWM Controller
Current Mode
CS
Precise Low Tolerance Peak
Current Limitation
CoolMOS®
RSense
FB
BA
Active Burst Mode
Control
Unit
GND
Auto Restart Mode
CoolSET®-F3R
(Jitter Mode)
1)
Type
ICE3RBR1765JZ
Package
Marking
3RBR1765JZ
VDS
650V
FOSC
65kHz
RDSon
1.70
230VAC ±15%2)
85-265 VAC2)
29.5W
PG-DIP-7
44.5W
1)
typ @ Tj=25°C
Calculated maximum input power rating at Ta=50°C, Ti=125°C and without copper area as heat sink. Refer to input power curve for other Ta.
2)
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Table of Contents
Page
1
1.1
1.2
Pin Configuration and Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Pin Configuration with PG-DIP-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Pin Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
2
Representative Blockdiagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3
3.1
3.2
3.3
3.3.1
3.3.2
3.4
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Power Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Improved Current Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
PWM-OP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
PWM-Comparator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Startup Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
PWM-Latch FF1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Gate Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Leading Edge Blanking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Propagation Delay Compensation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Control Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Basic and Extendable Blanking Mode . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Entering Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Working in Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Leaving Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Protection Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Auto Restart mode with extended blanking time . . . . . . . . . . . . . . . . .17
Auto Restart without extended blanking time . . . . . . . . . . . . . . . . . . .18
3.5
3.5.1
3.5.2
3.5.3
3.6
3.6.1
3.6.2
3.7
3.7.1
3.7.2
3.7.2.1
3.7.2.2
3.7.2.3
3.7.3
3.7.3.1
3.7.3.2
4
4.1
4.2
4.3
4.3.1
4.3.2
4.3.3
4.3.4
4.3.5
4.3.6
4.3.7
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Supply Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Internal Voltage Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Soft Start time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Control Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
CoolMOS® Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
5
Typical CoolMOS® Performance Characteristic . . . . . . . . . . . . . . . . . . .24
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6
7
8
9
Input Power Curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
Outline Dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Schematic for recommended PCB layout . . . . . . . . . . . . . . . . . . . . . . . .29
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Pin Configuration and Functionality
1 Pin Configuration and Functionality
1.1
Pin Configuration with PG-DIP-7
1.2
Pin Functionality
BA (extended Blanking & Auto-restart enable)
The BA pin combines the functions of extendable
blanking time for over load protection and the external
auto-restart enable. The extendable blanking time
function is to extend the built-in 20 ms blanking time by
adding an external capacitor at BA pin to ground. The
external auto-restart enable function is an external
access to stop the gate switching and force the IC enter
auto-restart mode. It is triggered by pulling down the
BA pin to less than 0.33V.
Pin
Symbol Function
1
BA
extended Blanking & Auto-restart
enable
2
3
FB
CS
FeedBack
Current Sense/
650V1) CoolMOS® Source
4
5
n.c.
not connected
FB (Feedback)
650V1) CoolMOS® Drain
Not connected
Drain
The information about the regulation is provided by the
FB Pin to the internal Protection Unit and to the internal
PWM-Comparator to control the duty cycle. The FB-
Signal is the only control signal in case of light load at
the Active Burst Mode.
6
7
n.c.
VCC
GND
Controller Supply Voltage
Controller GrouND
8
1)
at Tj=110°C
CS (Current Sense)
The Current Sense pin senses the voltage developed
on the series resistor inserted in the source of the
integrated CoolMOS® If voltage in CS pin reaches the
internal threshold of the Current Limit Comparator, the
Driver output is immediately switched off. Furthermore
the current information is provided for the PWM-
Comparator to realize the Current Mode.
Package PG-DIP-7
BA
FB
1
8
7
GND
VCC
Drain (Drain of integrated CoolMOS®)
Drain pin is the connection to the Drain of the
integrated CoolMOS®.
2
VCC (Power Supply)
VCC pin is the positive supply of the IC. The operating
range is between 10.5V and 25V.
CS
n.c.
3
4
GND (Ground)
GND pin is the ground of the controller.
5
Drain
Figure 1
Pin Configuration PG-DIP-7 (top view)
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Representative Blockdiagram
2
Representative Blockdiagram
Figure 2
Representative Blockdiagram
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Functional Description
3
Functional Description
All values which are used in the functional description conditions. This is necessary for a prolonged fault
are typical values. For calculating the worst cases the condition which could otherwise lead to a destruction of
min/max values which can be found in section 4 the SMPS over time. Once the malfunction is removed,
Electrical Characteristics have to be considered.
normal operation is automatically retained after the
next Start Up Phase. To make the protection more
flexible, an external auto-restart enable pin is provided.
When the pin is triggered, the switching pulse at gate
will stop and the IC enters the auto-restart mode after
the pre-defined spike blanking time.
3.1
Introduction
ICE3RBR1765JZ (ICE3RBRxx65JZ series) is derived
from ICE3BRxx65J in DIP-7 package. It has more
robust design and can work to -40°C.
The internal precise peak current control reduces the
costs for the transformer and the secondary diode. The
influence of the change in the input voltage on the
maximum power limitation can be avoided together
with the integrated Propagation Delay Compensation.
Therefore the maximum power is nearly independent
on the input voltage, which is required for wide range
SMPS. Thus there is no need for the over-sizing of the
SMPS, e.g. the transformer and the output diode.
A high voltage Startup Cell is integrated into the IC
which is switched off once the Undervoltage Lockout
on-threshold of 18V is exceeded. This Startup Cell is
part of the integrated CoolMOS®. The external startup
resistor is no longer necessary as this Startup Cell is
connected to the Drain. Power losses are therefore
reduced. This increases the efficiency under light load
conditions drastically.
Furthermore, it implements the frequency jitter mode to
the switching clock such that the EMI noise will be
effectively reduced.
The particular features are the active burst mode,
propagation delay compensation, modulated gate
driving, auto-restart protection for Vcc overvoltage,
over temperature, over load, open loop, built-in soft
start, blanking window and frequency jitter. It provides
the flexibility to increase the blanking window by simply
addition of a capacitor in BA pin. In order to further
increase the flexibility of the protection feature, an
external auto-restart enable features are added.
3.2
Power Management
Drain
VCC
Startup Cell
The intelligent Active Burst Mode can effectively obtain
the lowest Standby Power at light load and no load
conditions. After entering the burst mode, there is still a
full control of the power conversion to the output
through the optocoupler, that is used for the normal
PWM control. The response on load jumps is optimized
and the voltage ripple on Vout is minimized. The Vout is
on well controlled in this mode.
CoolMOS®
Power Management
Undervoltage Lockout
18V
Internal Bias
The usually external connected RC-filter in the
feedback line after the optocoupler is integrated in the
IC to reduce the external part count.
10.5V
Adopting the BiCMOS technology, it can increase the
design flexibility as the Vcc voltage range is increased
to 25V.
5.0V
Voltage
Reference
Power-Down Reset
It has a built-in 20ms soft start function.
Auto Restart
Mode
There are 2 modes of blanking time for high load
jumps; the basic mode and the extendable mode. The
blanking time for the basic mode is set at 20ms while
the extendable mode will increase the blanking time by
adding an external capacitor at the BA pin in addition to
the basic mode blanking time. During this blanking time
window the system can give the maximum power to the
loading.
Soft Start block
Active Burst
Mode
Figure 3
Power Management
The Undervoltage Lockout monitors the external
supply voltage VVCC. When the SMPS is plugged to the
main line the internal Startup Cell is biased and starts
to charge the external capacitor CVCC which is
connected to the VCC pin. This VCC charge current is
In order to increase the robustness and safety of the
system, the IC provides Auto Restart protection. The
Auto Restart Mode reduces the average power
conversion to a minimum level under unsafe operating
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Functional Description
controlled to 0.9mA by the Startup Cell. When the VVCC
exceeds the on-threshold VCCon=18V the bias circuit
are switched on. Then the Startup Cell is switched off
by the Undervoltage Lockout and therefore no power
losses present due to the connection of the Startup Cell
to the Drain voltage. To avoid uncontrolled ringing at
switch-on, a hysteresis start up voltage is implemented.
The switch-off of the controller can only take place
when VVCC falls below 10.5V after normal operation
was entered. The maximum current consumption
before the controller is activated is about 150μA.
Amplified Current Signal
FB
0.67V
Driver
t
t
When VVCC falls below the off-threshold VCCoff=10.5V,
the bias circuit is switched off and the soft start counter
is reset. Thus it is ensured that at every startup cycle
the soft start starts at zero.
The internal bias circuit is switched off if Auto Restart
Mode is entered. The current consumption is then
reduced to 150μA.
Once the malfunction condition is removed, this block
will then turn back on. The recovery from Auto Restart
Mode does not require re-cycling the AC line.
Ton
Figure 5
Pulse Width Modulation
When Active Burst Mode is entered, the internal Bias is
switched off most of the time but the Voltage Reference
is kept alive in order to reduce the current consumption
below 450μA.
In case the amplified current sense signal exceeds the
FB signal the on-time Ton of the driver is finished by
resetting the PWM-Latch (see Figure 5).
The primary current is sensed by the external series
resistor RSense inserted in the source of the integrated
CoolMOS®. By means of Current Mode regulation, the
secondary output voltage is insensitive to the line
variations. The current waveform slope will change with
the line variation, which controls the duty cycle.
The external RSense allows an individual adjustment of
the maximum source current of the integrated
CoolMOS®.
3.3
Improved Current Mode
Soft-Start Comparator
PWM-Latch
FB
R
Q
C8
To improve the Current Mode during light load
conditions the amplified current ramp of the PWM-OP
is superimposed on a voltage ramp, which is built by
the switch T2, the voltage source V1 and a resistor R1
(see Figure 6). Every time the oscillator shuts down for
maximum duty cycle limitation the switch T2 is closed
by VOSC. When the oscillator triggers the Gate Driver,
T2 is opened so that the voltage ramp can start.
In case of light load the amplified current ramp is too
small to ensure a stable regulation. In that case the
Voltage Ramp is a well defined signal for the
comparison with the FB-signal. The duty cycle is then
controlled by the slope of the Voltage Ramp.
Driver
S
Q
0.67V
PWM OP
x3.3
CS
Improved
By means of the time delay circuit which is triggered by
the inverted VOSC signal, the Gate Driver is switched-off
until it reaches approximately 156ns delay time (see
Figure 7). It allows the duty cycle to be reduced
continuously till 0% by decreasing VFB below that
threshold.
Current Mode
Figure 4
Current Mode
Current Mode means the duty cycle is controlled by the
slope of the primary current. This is done by comparing
the FB signal with the amplified current sense signal.
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Functional Description
3.3.1
PWM-OP
The input of the PWM-OP is applied over the internal
leading edge blanking to the external sense resistor
Soft-Start Comparator
PWM Comparator
R
Sense connected to pin CS. RSense converts the source
current into a sense voltage. The sense voltage is
amplified with a gain of 3.3 by PWM OP. The output of
the PWM-OP is connected to the voltage source V1.
The voltage ramp with the superimposed amplified
current signal is fed into the positive inputs of the PWM-
Comparator C8 and the Soft-Start-Comparator (see
Figure 6).
FB
C8
PWM-Latch
Oscillator
VOSC
time delay
circuit (156ns)
Gate Driver
X3.3
3.3.2
PWM-Comparator
The PWM-Comparator compares the sensed current
signal of the integrated CoolMOS® with the feedback
signal VFB (see Figure 8). VFB is created by an external
optocoupler or external transistor in combination with
the internal pull-up resistor RFB and provides the load
information of the feedback circuitry. When the
amplified current signal of the integrated CoolMOS®
exceeds the signal VFB the PWM-Comparator switches
off the Gate Driver.
0.67V
10kΩ
R1
T2
V1
PWM OP
Voltage Ramp
5V
Figure 6
Improved Current Mode
Soft-Start Comparator
RFB
FB
VOSC
PWM-Latch
C8
max.
Duty Cycle
PWM Comparator
0.67V
t
Voltage Ramp
Optocoupler
PWM OP
CS
0.67V
FB
X3.3
Improved
Current Mode
t
Gate Driver
156ns time delay
Figure 8
PWM Controlling
t
Figure 7
Light Load Conditions
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Functional Description
When the VVCC exceeds the on-threshold voltage, the
IC starts the Soft Start mode (see Figure 10).
3.4
Startup Phase
The function is realized by an internal Soft Start
resistor, an current sink and a counter. And the
amplitude of the current sink is controlled by the
counter (see Figure 11).
Soft Start
counter
SoftS
Soft Start
5V
Soft Start
RSoftS
Soft-Start
SoftS
Com parator
Gate Driver
C7
&
G7
32I
4I
8I
2I
I
Soft Start
Counter
0.67V
x3.3
CS
PW M OP
Soft Start
Figure 9
Figure 11
Soft Start Circuit
In the Startup Phase, the IC provides a Soft Start
period to control the primary current by means of a duty
cycle limitation. The Soft Start function is a built-in
function and it is controlled by an internal counter.
After the IC is switched on, the VSFOFTS voltage is
controlled such that the voltage is increased step-
wisely (32 steps) with the increase of the counts. The
Soft Start counter would send a signal to the current
sink control in every 600us such that the current sink
decrease gradually and the duty ratio of the gate drive
increases gradually. The Soft Start will be finished in
20ms (TSoft-Start) after the IC is switched on. At the end
of the Soft Start period, the current sink is switched off.
.
VSoftS
tSoft-Start
VSOFTS32
VSoftS
t
VSoftS2
VSoftS1
Gate
Driver
t
Figure 10
Soft Start Phase
Figure 12 Gate drive signal under Soft-Start Phase
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Functional Description
Within the soft start period, the duty cycle is increasing
from zero to maximum gradually (see Figure 12).
3.5
PWM Section
In addition to Start-Up, Soft-Start is also activated at
each restart attempt during Auto Restart.
0.75
PWM Section
Oscillator
VSoftS
Duty Cycle
max
tSoft-Start
VSOFTS32
Clock
Frequency
Jitter
VFB
t
t
Soft Start
Block
4.0V
FF1
Q
Gate Driver
&
S
R
Soft Start
Comparator
1
G8
PWM
G9
VOUT
Comparator
Current
Limiting
VOUT
CoolMOS®
Gate
tStart-Up
t
Figure 14
PWM Section Block
Figure 13 Start Up Phase
3.5.1
Oscillator
The Start-Up time TStart-Up before the converter output
voltage VOUT is settled, must be shorter than the Soft-
Start Phase TSoft-Start (see Figure 13).
The oscillator generates a fixed frequency of 65KHz
with frequency jittering of ±4% (which is ±2.6KHz) at a
jittering period of 4ms.
By means of Soft-Start there is an effective
minimization of current and voltage stresses on the
integrated CoolMOS®, the clamp circuit and the output
overshoot and it helps to prevent saturation of the
transformer during Start-Up.
A capacitor, a current source and current sink which
determine the frequency are integrated. In order to
achieve a very accurate switching frequency, the
charging and discharging current of the implemented
oscillator capacitor are internally trimmed. The ratio of
controlled charge to discharge current is adjusted to
reach a maximum duty cycle limitation of Dmax=0.75.
Once the Soft Start period is over and when the IC goes
into normal operating mode, the switching frequency of
the clock is varied by the control signal from the Soft
Start block. Then the switching frequency is varied in
range of 65KHz ± 2.6KHz at period of 4ms.
3.5.2
PWM-Latch FF1
The output of the oscillator block provides continuous
pulse to the PWM-Latch which turns on/off the
integrated CoolMOS®. After the PWM-Latch is set, it is
reset by the PWM comparator, the Soft Start
comparator or the Current -Limit comparator. When it is
in reset mode, the output of the driver is shut down
immediately.
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Functional Description
3.5.3
Gate Driver
3.6
Current Limiting
PWM Latch
FF1
VCC
Current Limiting
PWM-Latch
1
Propagation-Delay
Compensation
Gate
CoolMOS®
Vcsth
Leading
Edge
C10
Blanking
220ns
PWM-OP
Gate Driver
&
C12
G10
0.34V
Figure 15
Gate Driver
The driver-stage is optimized to minimize EMI and to
provide high circuit efficiency. The switch on speed is
slowed down before it reaches the integrated
CoolMOS® turn on threshold. That is a slope control of
the rising edge at the output of the driver (see Figure
16).
1pF
10k
Active Burst
Mode
D1
CS
(internal)
VGate
Figure 17
Current Limiting Block
There is a cycle by cycle peak current limiting operation
realized by the Current-Limit comparator C10. The
source current of the integrated CoolMOS® is sensed
via an external sense resistor RSense. By means of
RSense the source current is transformed to a sense
voltage VSense which is fed into the CS pin. If the voltage
ca. t = 130ns
5V
V
Sense exceeds the internal threshold voltage Vcsth, the
comparator C10 immediately turns off the gate drive by
resetting the PWM Latch FF1.
t
A Propagation Delay Compensation is added to
support the immediate shut down of the integrated
CoolMOS® with very short propagation delay. Thus the
influence of the AC input voltage on the maximum
output power can be reduced to minimal.
Figure 16
Gate Rising Slope
Thus the leading switch on spike is minimized.
Furthermore the driver circuit is designed to eliminate
cross conduction of the output stage.
In order to prevent the current limit from distortions
caused by leading edge spikes, a Leading Edge
Blanking is integrated in the current sense path for the
comparators C10, C12 and the PWM-OP.
During power up, when VCC is below the undervoltage
lockout threshold VVCCoff, the output of the Gate Driver
is set to low in order to disable power transfer to the
secondary side.
The output of comparator C12 is activated by the Gate
G10 if Active Burst Mode is entered. When it is
activated, the current limiting is reduced to 0.34V. This
voltage level determines the maximum power level in
Active Burst Mode.
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Functional Description
3.6.1
Leading Edge Blanking
For example, Ipeak = 0.5A with RSense = 2. The current
sense threshold is set to a static voltage level Vcsth=1V
without Propagation Delay Compensation. A current
ramp of dI/dt = 0.4A/µs, or dVSense/dt = 0.8V/µs, and a
propagation delay time of tPropagation Delay =180ns leads
to an Ipeak overshoot of 14.4%. With the propagation
delay compensation, the overshoot is only around 2%
(see Figure 20).
VSense
Vcsth
tLEB = 220ns
without compensation
with compensation
V
1,3
t
1,25
1,2
Figure 18
Leading Edge Blanking
1,15
1,1
Whenever the integrated CoolMOS® is switched on, a
leading edge spike is generated due to the primary-
side capacitances and reverse recovery time of the
secondary-side rectifier. This spike can cause the gate
drive to switch off unintentionally. In order to avoid a
premature termination of the switching pulse, this spike
is blanked out with a time constant of tLEB = 220ns.
1,05
1
0,95
0,9
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
1,8
2
V
dVSense
dt
μs
3.6.2
Propagation Delay Compensation
Figure 20
Overcurrent Shutdown
In case of over-current detection, there is always
propagation delay to switch off the integrated
CoolMOS®. An overshoot of the peak current Ipeak is
induced to the delay, which depends on the ratio of dI/
dt of the peak current (see Figure 19).
The Propagation Delay Compensation is realized by
means of a dynamic threshold voltage Vcsth (see Figure
21). In case of a steeper slope the switch off of the
driver is earlier to compensate the delay.
VOSC
max. Duty Cycle
Signal2
IOvershoot2
Signal1
tPropagation Delay
ISense
Ipeak2
Ipeak1
ILimit
off time
VSense
t
Propagation Delay
IOvershoot1
Vcsth
t
Figure 19
Current Limiting
Signal1
Signal2
The overshoot of Signal2 is larger than of Signal1 due
to the steeper rising waveform. This change in the
slope depends on the AC input voltage. Propagation
Delay Compensation is integrated to reduce the
overshoot due to dI/dt of the rising primary current.
Thus the propagation delay time between exceeding
the current sense threshold Vcsth and the switching off
of the integrated CoolMOS® is compensated over
temperature within a wide range. Current Limiting is
then very accurate.
t
Figure 21
Dynamic Voltage Threshold Vcsth
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Functional Description
After the 30us spike blanking time, the Auto Restart
Mode is activated.
3.7
Control Unit
The Control Unit contains the functions for Active Burst
Mode and Auto Restart Mode. The Active Burst Mode
and the Auto Restart Mode both have 20ms internal
Blanking Time. For the Auto Restart Mode, a further
extendable Blanking Time is achieved by adding
external capacitor at BA pin. By means of this Blanking
Time, the IC avoids entering into these two modes
accidentally. Furthermore those buffer time for the
overload detection is very useful for the application that
works in low current but requires a short duration of
high current occasionally.
For example, if CBK = 0.22uF, IBK = 13uA
Blanking time = 20ms + CBK x (4.0 - 0.9) / IBK = 72ms
In order to make the startup properly, the maximum CBK
capacitor is restricted to less than 0.65uF.
The Active Burst Mode has basic blanking mode only
while the Auto Restart Mode has both the basic and the
extendable blanking mode.
3.7.2
Active Burst Mode
The IC enters Active Burst Mode under low load
conditions. With the Active Burst Mode, the efficiency
increases significantly at light load conditions while still
maintaining a low ripple on VOUT and a fast response on
load jumps. During Active Burst Mode, the IC is
controlled by the FB signal. Since the IC is always
active, it can be a very fast response to the quick
change at the FB signal. The Start up Cell is kept OFF
in order to minimize the power loss.
3.7.1
Basic and Extendable Blanking Mode
5.0V
IBK
BA
Auto
Restart
Mode
Internal Bias
C3
CBK
#
4.0V
Current
Limiting
0.9V
&
Spike
Blanking
8.0us
1
&
G10
4.0V
G5
S1
G2
C4
Active
Burst
Mode
20ms
Blanking
Time
4.0V
FB
&
C4
C5
G6
1.35V
20 ms
Blanking
Time
FB
&
Active
Burst
Mode
20ms
Blanking
Time
C5
G6
1.35V
C6a
C6b
Control Unit
3.5V
3.0V
&
Figure 22
Basic and Extendable Blanking Mode
G11
There are 2 kinds of Blanking mode; basic mode and
the extendable mode. The basic mode is just an
internal set 20ms blanking time while the extendable
mode has an extra blanking time by connecting an
external capacitor to the BA pin in addition to the pre-
set 20ms blanking time. For the extendable mode, the
gate G5 is blocked even though the 20ms blanking time
is reached if an external capacitor CBK is added to BA
pin. While the 20ms blanking time is passed, the switch
S1 is opened by G2. Then the 0.9V clamped voltage at
BA pin is charged to 4.0V through the internal IBK
constant current. G5 is enabled by comparator C3.
Control Unit
Figure 23
Active Burst Mode
The Active Burst Mode is located in the Control Unit.
Figure 23 shows the related components.
3.7.2.1
Entering Active Burst Mode
The FB signal is kept monitoring by the comparator C5.
During normal operation, the internal blanking time
counter is reset to 0. Once the FB signal falls below
1.35V, it starts to count. When the counter reach 20ms
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Functional Description
and FB signal is still below 1.35V, the system enters
the Active Burst Mode. This time window prevents a
sudden entering into the Active Burst Mode due to
large load jumps.
VFB
Leaving
Active Burst
Mode
Entering
Active Burst
Mode
After entering Active Burst Mode, a burst flag is set and
the internal bias is switched off in order to reduce the
current consumption of the IC to approx. 450uA.
4.0V
3.5V
3.0V
It needs the application to enforce the VCC voltage
above the Undervoltage Lockout level of 10.5V such
that the Startup Cell will not be switched on
accidentally. Or otherwise the power loss will increase
drastically. The minimum VCC level during Active Burst
Mode depends on the load condition and the
application. The lowest VCC level is reached at no load
condition.
1.35V
Blanking Timer
t
20ms Blanking Time
3.7.2.2
Working in Active Burst Mode
After entering the Active Burst Mode, the FB voltage
rises as VOUT starts to decrease, which is due to the
inactive PWM section. The comparator C6a monitors
the FB signal. If the voltage level is larger than 3.5V, the
internal circuit will be activated; the Internal Bias circuit
resumes and starts to provide switching pulse. In
Active Burst Mode the gate G10 is released and the
current limit is reduced to 0.34V, which can reduce the
conduction loss and the audible noise. If the load at
VCS
t
t
t
t
t
Current limit level
during Active Burst
Mode
1.03V
0.34V
V
OUT is still kept unchanged, the FB signal will drop to
3.0V. At this level the C6b deactivates the internal
circuit again by switching off the internal Bias. The gate
G11 is active again as the burst flag is set after entering
Active Burst Mode. In Active Burst Mode, the FB
voltage is changing like a saw tooth between 3.0V and
3.5V (see figure 24).
VVCC
3.7.2.3
Leaving Active Burst Mode
10.5V
The FB voltage will increase immediately if there is a
high load jump. This is observed by the comparator C4.
Since the current limit is app. 34% during Active Burst
Mode, it needs a certain load jump to rise the FB signal
to exceed 4.0V. At that time the comparator C4 resets
the Active Burst Mode control which in turn blocks the
comparator C12 by the gate G10. The maximum
current can then be resumed to stabilize the VOUT.
IVCC
2.5mA
450uA
VOUT
Figure 24
Signals in Active Burst Mode
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Functional Description
3.7.3
Protection Modes
3.7.3.1
Auto Restart mode with extended
blanking time
The IC provides Auto Restart Mode as the protection
feature. Auto Restart mode can prevent the SMPS from
destructive states. The following table shows the
relationship between possible system failures and the
corresponding protection modes.
5.0V
VCC Overvoltage
Overtemperature
Overload
Auto Restart Mode
Auto Restart Mode
Auto Restart Mode
Auto Restart Mode
Auto Restart Mode
Auto Restart Mode
Auto Restart Mode
IBK
BA
Auto
Restart
Mode
C3
Open Loop
CBK
#
4.0V
VCC Undervoltage
Short Optocoupler
Auto restart enable
0.9V
&
G5
Spike
Blanking
8.0us
1
S1
G2
Before entering the Auto Restart protection mode,
some of the protections can have extended blanking
time to delay the protection and some needs to fast
react and will go straight to the protection. Overload
and open loop protection are the one can have
extended blanking time while Vcc Overvoltage, Over
temperature, Vcc Undervoltage, short opto-coupler
and external auto restart enable will go to protection
right away.
20ms
Blanking
Time
4.0V
C4
FB
Control Unit
Figure 25
Auto Restart Mode
In case of Overload or Open Loop, the FB exceeds
4.0V which will be observed by comparator C4. Then
the internal blanking counter starts to count. When it
reaches 20ms, the switch S1 is released. Then the
clamped voltage 0.9V at VBA can increase. When there
is no external capacitor CBK connected, the VBA will
reach 4.0V immediately. When both the input signals at
AND gate G5 is positive, the Auto Restart Mode will be
activated after the extra spike blanking time of 30us is
elapsed. However, when an extra blanking time is
needed, it can be achieved by adding an external
capacitor, CBK. A constant current source of IBK will start
to charge the capacitor CBK from 0.9V to 4.0V after the
switch S1 is released. The charging time from 0.9V to
4.0V are the extendable blanking time. If CBK is 0.22uF
and IBK is 13uA, the extendable blanking time is around
52ms and the total blanking time is 72ms. In combining
the FB and blanking time, there is a blanking window
generated which prevents the system to enter Auto
Restart Mode due to large load jumps.
After the system enters the Auto-restart mode, the IC
will be off. Since there is no more switching, the Vcc
voltage will drop. When it hits the Vcc turn off threshold,
the start up cell will turn on and the Vcc is charged by
the startup cell current to Vcc turn on threshold. The IC
is on and the startup cell will turn off. At this stage, it will
enter the startup phase (soft start) with switching
cycles. After the Start Up Phase, the fault condition is
checked. If the fault condition persists, the IC will go to
auto restart mode again. If, otherwise, the fault is
removed, normal operation is resumed.
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Functional Description
3.7.3.2
Auto Restart without extended blanking up cell will turn on automatically. And this leads to Auto
time
Restart Mode.
Short Optocoupler also leads to VCC undervoltage as
there is no self supply after activating the internal
reference and bias.
1ms
counter
UVLO
Auto Restart
Mode Reset
Auto-restart BA
Enable
Signal
VVCC < 10.5V
Stop
gate
drive
8us
Blanking
Time
C9
0.33V
Auto Restart
mode
25.5V
VCC
TAE
120us
Blanking
Time
C2
softs_period
Spike
&
Blanking
30us
VCC
C1
G1
20.5V
4.0V
Voltage
Reference
C4
FB
Thermal Shutdown
Tj >130°C
Control Unit
Figure 26
Auto Restart mode
There are 2 modes of VCC overvoltage protection; one
is during soft start and the other is at all conditions.
The first one is VVCC voltage is > 20.5V and FB is > 4.0V
and during soft_start period and the IC enters Auto
Restart Mode. The VCC voltage is observed by
comparator C1 and C4. The fault conditions are to
detect the abnormal operating during start up such as
open loop during light load start up, etc. The logic can
eliminate the possible of entering Auto Restart mode if
there is a small voltage overshoots of VVCC during
normal operating.
The 2nd one is VVCC >25.5V and last for 120us and the
IC enters Auto Restart Mode. This 25.5V Vcc OVP
protection is inactivated during burst mode.
The Thermal Shutdown block monitors the junction
temperature of the IC. After detecting a junction
temperature higher than 130°C, the Auto Restart Mode
is entered.
In case the pre-defined auto-restart features are not
sufficient, there is a customer defined external Auto-
restart Enable feature. This function can be triggered
by pulling down the BA pin to < 0.33V. It can simply add
a trigger signal to the base of the externally added
transistor, TAE at the BA pin. When the function is
enabled, the gate drive switching will be stopped and
then the IC will enter auto-restart mode if the signal
persists. To ensure this auto-restart function will not be
mis-triggered during start up, a 1ms delay time is
implemented to blank the unstable signal.
VCC undervoltage is the Vcc voltage drop below Vcc
turn off threshold. Then the IC will turn off and the start
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Electrical Characteristics
4
Electrical Characteristics
Note: All voltages are measured with respect to ground (Pin 8). The voltage levels are valid if other ratings are
not violated.
4.1
Absolute Maximum Ratings
Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction
of the integrated circuit. For the same reason make sure, that any capacitor that will be connected to pin 7
(VCC) is discharged before assembling the application circuit.Ta=25°C unless otherwise specified.
Parameter
Symbol
Limit Values
Unit
Remarks
min.
max.
Switching drain current, pulse width tp
limited by Tj=150°C
Is
-
-
-
-
4.03
A
Pulse drain current, pulse width tp limited ID_Puls
by Tj=150°C
6.12
0.15
1.5
A
Avalanche energy, repetitive tAR limited by EAR
max. Tj=150°C1)
mJ
A
Avalanche current, repetitive tAR limited by IAR
max. Tj=150°C1)
VCC Supply Voltage
FB Voltage
VVCC
VFB
VBA
VCS
Tj
-0.3
-0.3
-0.3
-0.3
-40
-55
-
27
V
5.5
5.5
5.5
150
150
96
V
BA Voltage
V
CS Voltage
V
Junction Temperature
Storage Temperature
°C
°C
K/W
Controller & CoolMOS®
TS
Thermal Resistance
Junction -Ambient
RthJA
Soldering temperature, wavesoldering
only allowed at leads
Tsold
-
-
260
2
°C
1.6mm (0.063in.) from
case for 10s
ESD Capability (incl. Drain Pin)
VESD
kV
Human body model2)
1)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f
According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kΩ series resistor)
2)
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Electrical Characteristics
4.2
Operating Range
Note: Within the operating range the IC operates as described in the functional description.
Parameter
Symbol
Limit Values
Unit
Remarks
min.
max.
25
VCC Supply Voltage
VVCC
TjCon
VVCCoff
-40
V
Max value limited due to Vcc OVP
Junction Temperature of
Controller
130
°C
Max value limited due to thermal
shut down of controller
Junction Temperature of
CoolMOS®
TjCoolMOS
-40
150
°C
4.3
Characteristics
4.3.1
Supply Section
Note: The electrical characteristics involve the spread of values within the specified supply voltage and junction
temperature range TJ from - 40 °C to 125 °C. Typical values represent the median values, which are
related to 25°C. If not otherwise stated, a supply voltage of VCC = 18 V is assumed.
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
Start Up Current
IVCCstart
-
150
250
μA
VVCC =17V
VCC Charge Current
IVCCcharge1
-
-
5.0
1.60
-
mA
mA
mA
μA
VVCC = 0V
VVCC = 1V
VVCC =17V
IVCCcharge2 0.55
0.9
0.7
0.2
IVCCcharge3
IStartLeak
-
-
Leakage Current of
50
VDrain = 450V
at Tj=100°C
Start Up Cell and CoolMOS®
Supply Current with
Inactive Gate
IVCCsup1
-
1.5
2.5
mA
Supply Current with Active Gate
IVCCsup2
-
-
2.7
3.4
-
mA
IFB = 0A
IFB = 0A
Supply Current in
Auto Restart Mode with Inactive
Gate
IVCCrestart
250
μA
Supply Current in Active Burst
Mode with Inactive Gate
IVCCburst1
IVCCburst2
-
-
450
450
950
950
μA
μA
VFB = 2.5V
VVCC = 11.5V,VFB = 2.5V
VCC Turn-On Threshold
VCC Turn-Off Threshold
VCC Turn-On/Off Hysteresis
VVCCon
VVCCoff
VVCChys
17.0
9.8
-
18.0
10.5
7.5
19.0
11.2
-
V
V
V
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Electrical Characteristics
4.3.2
Internal Voltage Reference
Symbol
Parameter
Limit Values
Unit
Test Condition
min.
typ.
max.
5.10
Trimmed Reference Voltage
VREF
4.90
5.00
V
measured at pin FB
IFB = 0
4.3.3
PWM Section
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
54.5
59.8
-
typ.
65.0
65.0
±2.6
4.0
max.
Fixed Oscillator Frequency
fOSC1
fOSC2
fjitter
73.5
70.2
-
kHz
kHz
kHz
ms
Tj = 25°C
Tj = 25°C
Tj = 25°C
Frequency Jittering Range
Frequency Jittering period
Max. Duty Cycle
Tjitter
Dmax
-
-
0.70
0.75
0.80
Min. Duty Cycle
PWM-OP Gain
Dmin
0
3.1
-
-
-
VFB < 0.3V
AV
3.3
0.67
0.5
-
3.5
-
Voltage Ramp Offset
VOffset-Ramp
V
V
FB Operating Range Min Level VFBmin
-
-
V
VFB Operating Range Max level VFBmax
-
4.3
23
V
CS=1V, limited by
Comparator C41)
FB Pull-Up Resistor
RFB
9
15.4
kΩ
1)
The parameter is not subjected to production test - verified by design/characterization
4.3.4
Soft Start time
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
Soft Start time
tSS
-
20.0
-
ms
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Electrical Characteristics
4.3.5
Control Unit
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
Clamped VBA voltage during
Normal Operating Mode
VBAclmp
VBKC3
0.85
0.9
0.95
4.15
4.15
1.45
3.65
3.12
21.5
V
V
V
V
V
V
V
VFB = 4V
Blanking time voltage limit for
Comparator C3
3.85
3.85
1.25
3.35
2.88
4.00
4.00
1.35
3.50
3.00
20.5
Over Load & Open Loop Detection VFBC4
Limit for Comparator C4
Active Burst Mode Level for
Comparator C5
VFBC5
Active Burst Mode Level for
Comparator C6a
VFBC6a
VFBC6b
After Active Burst
Mode is entered
Active Burst Mode Level for
Comparator C6b
After Active Burst
Mode is entered
Overvoltage Detection Limit for
Comparator C1
VVCCOVP1 19.5
VFB = 5V
Overvoltage Detection Limit for
Comparator C2
VVCCOVP2 25.0
25.5
26.5
V
Auto-restart Enable level at BA pin VAE
0.25
9.5
0.33
13.0
0.4
V
>30μs
Charging current at BA pin
Thermal Shutdown1)
IBK
16.9
μA
Charge starts after the
built-in 20ms blanking
time elapsed
TjSD
tBK
130
-
140
20
150
-
°C
Controller
Built-in Blanking Time for
Overload Protection or enter
Active Burst Mode
ms
without external
capacitor at BA pin
Inhibit Time for Auto-Restart
enable function during start up
tIHAE
-
-
1.0
30
-
-
ms
Count when VCC>18V
Spike Blanking Time before Auto- tSpike
Restart Protection
μs
1)
The parameter is not subjected to production test - verified by design/characterization. The thermal shutdown
temperature refers to the junction temperature of the controller.
Note: The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP
.
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Electrical Characteristics
4.3.6
Current Limiting
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
Peak Current Limitation
(incl. Propagation Delay)
Vcsth
0.95
1.03
1.10
V
dVsense / dt = 0.6V/μs
(see Figure 20)
Peak Current Limitation during VCS2
Active Burst Mode
0.29
-
0.34
220
-0.2
0.38
V
Leading Edge Blanking
tLEB
-
-
ns
μA
CS Input Bias Current
ICSbias
-1.6
VCS =0V
4.3.7
CoolMOS® Section
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
V(BR)DSS 650
typ.
max.
Drain Source Breakdown Voltage
-
-
V
Tj = 110°C,
Refer to Figure 30 for
other V(BR)DSS in
different Tj
Drain Source On-Resistance
RDSon
-
-
1.70
3.57
1.96
4.12
Ω
Ω
Tj = 25°C
Tj=125°C1)
at ID = 1.5A
Effective output capacitance, energy Co(er)
-
11.63
-
pF
VDS = 0V to 480V1)
related
Rise Time
Fall Time
1)
trise
tfall
-
-
302)
302)
-
-
ns
ns
The parameter is not subjected to production test - verified by design/characterization
Measured in a Typical Flyback Converter Application
2)
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Typical CoolMOS® Performance Characteristic
5
Typical CoolMOS® Performance Characteristic
Safe Operating Area for ICE3RBR1765JZ
ID = f ( VDS
)
parameter : D = 0, TC = 25deg.C
10
1
0.1
tp = 0.1ms
tp = 1ms
tp = 10ms
tp = 100ms
tp = 1000ms
DC
0.01
0.001
1
10
100
1000
VDS [V]
Figure 27
Safe Operating area (SOA) curve for ICE3RBR1765JZ
SOA temperature derating coefficient curve
( package dissipation ) for F3 & F2 CoolSET
120
100
80
60
40
20
0
0
20
40
60
80
100
120
140
Ambient/Case temperature Ta/Tc [deg.C]
Ta : DIP, Tc : TO220
Figure 28
SOA temperature derating coefficient curve
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Typical CoolMOS® Performance Characteristic
Allowable Power Dissipation for F3 CoolSET in DIP-7 package
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100
120
140
Ambient temperature, TA [deg.C]
Figure 29
Power dissipation; Ptot=f(Ta)
700
660
620
580
540
-60
-20
20
60
T j [°C]
100
140
180
Figure 30
Drain-source breakdown voltage; VBR(DSS)=f(Tj), ID=0.25mA
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Input Power Curve
6
Input Power Curve
Two input power curves giving the typical input power versus ambient temperature are showed below;
Vin=85Vac~265Vac (Figure 31) and Vin=230Vac+/-15% (Figure 32). The curves are derived based on a typical
discontinuous mode flyback model which considers either 50% maximum duty ratio or 100V maximum secondary
to primary reflected voltage (higher priority). The calculation is based on no copper area as heatsink for the device.
The input power already includes the power loss at input common mode choke, bridge rectifier and the
CoolMOS.The device saturation current (ID_Puls @ Tj=125°C) is also considered.
To estimate the output power of the device, it is simply multiplying the input power at a particular operating ambient
temperature with the estimated efficiency for the application. For example, a wide range input voltage (Figure 31),
operating temperature is 50°C, estimated efficiency is 85%, then the estimated output power is 25W (29.5W *
85%).
Figure 31
Input power curve Vin=85~265Vac; Pin=f(Ta)
Figure 32
Input power curve Vin=230Vac+/-15%; Pin=f(Ta)
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Outline Dimension
7
Outline Dimension
PG-DIP-7
(Plastic Dual In-Line Outline)
Figure 33
PG-DIP-7 (Pb-free lead plating Plastic Dual-in-Line Outline)
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ICE3RBR1765JZ
Marking
8
Marking
Marking
Figure 34
Marking for ICE3RBR1765JZ
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Schematic for recommended PCB layout
9
Schematic for recommended PCB layout
TR1
BR1
C12
R11
D21
Spark Gap 3
C11
bulk cap
FUSE1
X-CAP
C1
Vo
L
L1
D11
Spark Gap 1
C21
GND
Spark Gap 2
D11
Z11
Spark Gap 4
GND
N
IC11
R12
C3
C2
Y-CAP
C16
D13
R21
CS
DRAIN
VCC
R13
Y-CAP
C4
R14
F3
Y-CAP
BA
GND
CoolSET
FB
R23
R22
C23
NC
C22
C15
C13
C14
R24
*
IC12
IC21
R25
F3 CoolSET schematic for recommended PCB layout
Figure 35
Schematic for recommended PCB layout
General guideline for PCB layout design using F3/F3R CoolSET® (refer to Figure 35):
1. “Star Ground “at bulk capacitor ground, C11:
“Star Ground “means all primary DC grounds should be connected to the ground of bulk capacitor C11
separately in one point. It can reduce the switching noise going into the sensitive pins of the CoolSET® device
effectively. The primary DC grounds include the followings.
a. DC ground of the primary auxiliary winding in power transformer, TR1, and ground of C16 and Z11.
b. DC ground of the current sense resistor, R12
c. DC ground of the CoolSET® device, GND pin of IC11; the signal grounds from C13, C14, C15 and collector
of IC12 should be connected to the GND pin of IC11 and then “star “connect to the bulk capacitor ground.
d. DC ground from bridge rectifier, BR1
e. DC ground from the bridging Y-capacitor, C4
2. High voltage traces clearance:
High voltage traces should keep enough spacing to the nearby traces. Otherwise, arcing would incur.
a. 400V traces (positive rail of bulk capacitor C11) to nearby trace: > 2.0mm
b. 600V traces (drain voltage of CoolSET® IC11) to nearby trace: > 2.5mm
3. Filter capacitor close to the controller ground:
Filter capacitors, C13, C14 and C15 should be placed as close to the controller ground and the controller pin
as possible so as to reduce the switching noise coupled into the controller.
Guideline for PCB layout design when >3KV lightning surge test applied (refer to Figure 35):
1. Add spark gap
Spark gap is a pair of saw-tooth like copper plate facing each other which can discharge the accumulated
charge during surge test through the sharp point of the saw-tooth plate.
a. Spark Gap 3 and Spark Gap 4, input common mode choke, L1:
Gap separation is around 1.5mm (no safety concern)
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Schematic for recommended PCB layout
b. Spark Gap 1 and Spark Gap 2, Live / Neutral to GROUND:
These 2 Spark Gaps can be used when the lightning surge requirement is >6KV.
230Vac input voltage application, the gap separation is around 5.5mm
115Vac input voltage application, the gap separation is around 3mm
2. Add Y-capacitor (C2 and C3) in the Live and Neutral to ground even though it is a 2-pin input
3. Add negative pulse clamping diode, D11 to the Current sense resistor, R12:
The negative pulse clamping diode can reduce the negative pulse going into the CS pin of the CoolSET® and
reduce the abnormal behavior of the CoolSET®. The diode can be a fast speed diode such as IN4148.
The principle behind is to drain the high surge voltage from Live/Neutral to Ground without passing through the
sensitive components such as the primary controller, IC11.
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Total Quality Management
Qualität hat für uns eine umfassende
Bedeutung. Wir wollen allen Ihren
Ansprüchen in der bestmöglichen
Weise gerecht werden. Es geht uns also
nicht nur um die Produktqualität –
unsere Anstrengungen gelten
gleichermaßen der Lieferqualität und
Logistik, dem Service und Support
sowie allen sonstigen Beratungs- und
Betreuungsleistungen.
Quality takes on an allencompassing
significance at Semiconductor Group.
For us it means living up to each and
every one of your demands in the best
possible way. So we are not only
concerned with product quality. We
direct our efforts equally at quality of
supply and logistics, service and
support, as well as all the other ways in
which we advise and attend to you.
Dazu gehört eine bestimmte
Part of this is the very special attitude of
our staff. Total Quality in thought and
deed, towards co-workers, suppliers
and you, our customer. Our guideline is
“do everything with zero defects”, in an
open manner that is demonstrated
beyond your immediate workplace, and
to constantly improve.
Geisteshaltung unserer Mitarbeiter.
Total Quality im Denken und Handeln
gegenüber Kollegen, Lieferanten und
Ihnen, unserem Kunden. Unsere
Leitlinie ist jede Aufgabe mit „Null
Fehlern“ zu lösen – in offener
Sichtweise auch über den eigenen
Arbeitsplatz hinaus – und uns ständig
zu verbessern.
Throughout the corporation we also
think in terms of Time Optimized
Processes (top), greater speed on our
part to give you that decisive
competitive edge.
Unternehmensweit orientieren wir uns
dabei auch an „top“ (Time Optimized
Processes), um Ihnen durch größere
Schnelligkeit den entscheidenden
Wettbewerbsvorsprung zu verschaffen.
Give us the chance to prove the best of
performance through the best of quality
– you will be convinced.
Geben Sie uns die Chance, hohe
Leistung durch umfassende Qualität zu
beweisen.
Wir werden Sie überzeugen.
h t t p : / / w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
相关型号：
ICE3RBR4765JG
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