IDB04E120_07 [INFINEON]

Fast Switching EmCon Diode; 快速开关EMCON二极管


型号：	IDB04E120_07
厂家：	Infineon
描述：	Fast Switching EmCon Diode 快速开关EMCON二极管二极管开关
文件：	总8页 (文件大小：205K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IDB04E120

Fast Switching EmCon Diode

Product Summary

Feature

1200

RRM

• 1200 V EmCon technology

• Fast recovery

1.65

150

• Soft switching

°C

jmax

• Low reverse recovery charge

• Low forward voltage

• Easy paralleling

PG-TO263-3-2

* RoHS compliant

Type

Package

Ordering Code Marking Pin 1 PIN 2 PIN 3

D04E120

IDB04E120

PG-TO263-3-2

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Repetitive peak reverse voltage

Continous forward current

1200

RRM

T =25°C

11.2

7.1

T =90°C

Surge non repetitive forward current

FSM

FRM

T =25°C, t =10 ms, sine halfwave

Maximum repetitive forward current

16.5

T =25°C, t limited by T

, D=0.5

jmax

Power dissipation

tot

T =25°C

43.1

20.6

T =90°C

-55...+150

°C

Operating and storage temperature

T , T

j stg

Soldering temperature

245

reflow soldering, MSL1

Page 1

Rev.2.2

2007-09-01

IDB04E120

Thermal Characteristics

Parameter

Symbol

Values

typ. max.

Unit

min.

Characteristics

2.9

K/W

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

thJC

thJA

@ 6 cm cooling area

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

µA

min.

typ. max.

Static Characteristics

Reverse leakage current

V =1200V, T =25°C

100

350

V =1200V, T =150°C

Forward voltage drop

I =4A, T =25°C

1.65

1.7

2.15

I =4A, T =150°C

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 2

Rev.2.2

2007-09-01

IDB04E120

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

typ. max.

Unit

min.

Dynamic Characteristics

Reverse recovery time

V =800V, I =4A, di /dt=750A/µs, T =25°C

115

180

185

V =800V, I =4A, di /dt=750A/µs, T =125°C

V =800V, I =4A, di /dt=750A/µs, T =150°C

Peak reverse current

rrm

V =800V, I = 4 A, di /dt=750A/µs, T =25°C

7.15

V =800V, I =4A, di /dt=750A/µs, T =125°C

V =800V, I =4A, di /dt=750A/µs, T =150°C

8.1

Reverse recovery charge

V =800V, I =4A, di /dt=750A/µs, T =25°C

330

575

630

V =800V, I =4A, di /dt=750A/µs, T =125°C

V =800V, I =4A, di /dt=750A/µs, T =150°C

Reverse recovery softness factor

V =800V, I =4A, di /dt=750A/µs, T =25°C

V =800V, I =4A, di /dt=750A/µs, T =125°C

7.8

V =800V, I =4A, di /dt=750A/µs, T =150°C

Page 3

Rev.2.2

2007-09-01

IDB04E120

1 Power dissipation

= f (T )

2 Diode forward current

I = f(T )

tot

parameter: T ≤ 150°C

100

150

100

150

°C

3 Typ. diode forward current

I = f (V )

4 Typ. diode forward voltage

V = f (T )

2.4

-55°C

25°C

100°C

150°C

1.8

1.6

1.4

1.2

0.5

1.5

-60

-20

100

160

°C

Page 4

Rev.2.2

2007-09-01

IDB04E120

5 Typ. reverse recovery time

t = f (di /dt)

6 Typ. reverse recovery charge

Q =f(di /dt)

parameter: V = 800V, T = 125°C

parameter: V = 800V, T = 125 °C

R j

500

900

400

350

300

250

200

150

100

800

750

700

650

600

550

500

450

400

200 300 400 500 600 700 800

1000

200 300 400 500 600 700 800

1000

A/µs

di /dt

A/µs

di /dt

7 Typ. reverse recovery current

8 Typ. reverse recovery softness factor

S = f(di /dt)

I = f (di /dt)

parameter: V = 800V, T = 125°C

R j

200 300 400 500 600 700 800

1000

200 300 400 500 600 700 800

1000

A/µs

di /dt

A/µs

di /dt

Page 5

Rev.2.2

2007-09-01

IDB04E120

9 Max. transient thermal impedance

= f (t )

thJC

parameter : D = t /T

10 ¹

IDP04E120

K/W

10 ⁰

10 ^-1

D = 0.50

0.20

10 ^-2

0.10

single pulse

0.05

0.02

10 ^-3

0.01

10 ^-4

10 ^-710 ^-610 ^-510 ^-410 ^-310 ^-2

10 ⁰

Page 6

Rev.2.2

2007-09-01

IDB04E120

Page 7

Rev.2.2

2007-09-01

IDB04E120

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,

regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device

or system Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

Page 8

Rev.2.2

2007-09-01

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