IDB06E60 [INFINEON]

Fast Switching EmCon Diode; 快速开关EMCON二极管


型号：	IDB06E60
厂家：	Infineon
描述：	Fast Switching EmCon Diode 快速开关EMCON二极管二极管开关软恢复二极管快速软恢复二极管
文件：	总9页 (文件大小：198K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IDP06E60

IDB06E60

Fast Switching EmCon Diode

Product Summary

Feature

600

RRM

• 600 V EmCon technology

• Fast recovery

• Soft switching

• Low reverse recovery charge

• Low forward voltage

• 175°C operating temperature

• Easy paralleling

1.5

175

°C

jmax

P-TO220-3.SMD

P-TO220-2-2.

Type

Package

Ordering Code Marking Pin 1 PIN 2 PIN 3

Q67040-S4480

P-TO220-3.SMD Q67040-S4481

IDP06E60

IDB06E60

P-TO220-2-2.

D06E60

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Repetitive peak reverse voltage

Continous forward current

Symbol

Value

600

Unit

RRM

T =25°C

14.7

T =90°C

Surge non repetitive forward current

FSM

FRM

T =25°C, t =10 ms, sine halfwave

Maximum repetitive forward current

T =25°C, t limited by T

, D=0.5

jmax

Power dissipation

tot

T =25°C

46.9

26.6

T =90°C

-55...+175

255

°C

Operating and storage temperature

T , T

j stg

Soldering temperature

1.6mm(0.063 in.) from case for 10s

Page 1

Rev.2

2003-07-31

IDP06E60

IDB06E60

Thermal Characteristics

Parameter

Symbol

Values

typ. max.

Unit

min.

Characteristics

3.2

K/W

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

thJC

thJA

@ 6 cm cooling area

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

typ. max.

Unit

µA

min.

Static Characteristics

Reverse leakage current

V =600V, T =25°C

500

V =600V, T =150°C

Forward voltage drop

I =6A, T =25°C

1.5

I =6A, T =150°C

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 2

Rev.2

2003-07-31

IDP06E60

IDB06E60

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

typ. max.

Unit

min.

Dynamic Characteristics

Reverse recovery time

V =400V, I =6A, di/dt=550A/µs, T =25°C

100

105

V =400V, I =6A, di/dt=550A/µs , T =125°C

V =400V, I =6A, di/dt=550A/µs , T =150°C

Peak reverse current

rrm

V =400V, I =6A, di/dt=550A/µs, T =25°C

6.5

7.4

7.9

V =400V, I =6A, di/dt=550A/µs, T =125°C

V =400V, I =6A, di/dt=550A/µs, T =150°C

Reverse recovery charge

V =400V, I =6A, di/dt=550A/µs, T =25°C

240

360

400

V =400V, I =6A, di/dt=550A/µs, T =125°C

V =400V, I =6A, di/dt=550A/µs, T =150°C

Reverse recovery softness factor

V =400V, I =6A, di /dt=550A/µs, T =25°C

4.8

4.9

V =400V, I =6A, di /dt=550A/µs, T =125°C

V =400V, I =6A, di /dt=550A/µs, T =150°C

Page 3

Rev.2

2003-07-31

IDP06E60

IDB06E60

1 Power dissipation

= f (T )

2 Diode forward current

I = f(T )

tot

parameter: T ≤ 175 °C

parameter: T ≤ 175°C

100

125

175

100

125

175

°C

3 Typ. diode forward current

I = f (V )

4 Typ. diode forward voltage

V = f (T )

12A

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

-55°C

25°C

100°C

150°C

0.5

1.5

2.5

-60

-20

100

160

°C

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Rev.2

2003-07-31

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IDB06E60

5 Typ. reverse recovery time

t = f (di /dt)

6 Typ. reverse recovery charge

Q =f(di /dt)

parameter: V = 400V, T = 125°C

parameter: V = 400V, T = 125 °C

300

550

12A

500

475

450

425

400

375

350

325

300

275

250

12A

200

150

100

200

300

400

500

600

800

200

300

400

500

600

800

A/µs

di /dt

7 Typ. reverse recovery current

I = f (di /dt)

8 Typ. reverse recovery softness factor

S = f(di /dt)

parameter: V = 400V, T = 125°C

R j

12A

200

300

400

500

600

800

200 300 400 500 600 700 800

1000

A/µs

di /dt

Page 5

Rev.2

2003-07-31

IDP06E60

IDB06E60

9 Max. transient thermal impedance

= f (t )

thJC

parameter : D = t /T

10 ¹

IDP06E60

K/W

10 ⁰

10 ^-1

10 ^-2

D = 0.50

0.20

0.10

0.05

single pulse

10 ^-3

0.02

0.01

10 ^-4

10 ^-710 ^-610 ^-510 ^-410 ^-310 ^-2

10 ⁰

Page 6

Rev.2

2003-07-31

IDP06E60

IDB06E60

TO-220-2-2

dimensions

[mm]

[inch]

min max

symbol

min

9.70

15.30

0.65

3.55

2.60

9.00

13.00

17.20

4.40

0.40

max

10.10 0.3819 0.3976

15.90 0.6024 0.6260

0.85

3.85

3.00

9.40

0.0256 0.0335

0.1398 0.1516

0.1024 0.1181

0.3543 0.3701

14.00 0.5118 0.5512

17.80 0.6772 0.7008

4.80

0.60

1.05 typ.

0.1732 0.1890

0.0157 0.0236

0.41 typ.

2.54 typ.

4.4 typ.

0.1 typ.

0.173 typ.

1.10

1.40

0.0433 0.0551

0.095 typ.

2.4 typ.

6.6 typ.

13.0 typ.

7.5 typ.

0.26 typ.

0.51 typ.

0.295 typ.

0.00

0.40

0.0000 0.0157

Page 7

Rev.2

2003-07-31

IDP06E60

IDB06E60

TO-220-3-45 (P-TO220SMD)

dimensions

[mm]

[inch]

max

10.00 0.3858 0.3937

symbol

min

9.80

max

min

1.3 typ.

0.0512 typ.

1.25

0.95

1.75

1.15

0.0492 0.0689

0.0374 0.0453

0.1 typ.

2.54 typ.

0.72

0.85

0.0283 0.0335

0.2 typ.

5.08 typ.

4.30

1.28

9.00

2.30

4.50

1.40

9.40

2.50

0.1693 0.1772

0.0504 0.0551

0.3543 0.3701

0.0906 0.0984

0.5551 typ.

14.1 typ.

0.00

3.30

0.20

3.90

0.0000 0.0079

0.1299 0.1535

8° max

1.70

0.50

2.50

0.65

0.0669 0.0984

0.0197 0.0256

0.4252 typ.

10.8 typ.

1.35 typ.

6.43 typ.

4.60 typ.

9.40 typ.

16.15 typ.

0.0532 typ.

0.2532 typ.

0.1811 typ.

0.3701 typ.

0.6358 typ.

Page 8

Rev.2

2003-07-31

IDP06E60

IDB06E60

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,

regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device

or system Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

Page 9

Rev.2

2003-07-31

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