首页 |元器件品牌

IDB12E120_07 [INFINEON]

Fast Switching EmCon Diode; 快速开关EMCON二极管
IDB12E120_07
型号： IDB12E120_07
厂家： Infineon    Infineon
描述：

Fast Switching EmCon Diode
快速开关EMCON二极管

二极管 开关
文件： 总8页 (文件大小：208K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
IDB12E120  
Fast Switching EmCon Diode  
Product Summary  
Feature  
V
1200  
12  
V
A
RRM  
• 1200 V EmCon technology  
• Fast recovery  
I
F
V
T
1.65  
150  
V
F
• Soft switching  
°C  
jmax  
• Low reverse recovery charge  
• Low forward voltage  
• Easy paralleling  
PG-TO263-3-2  
2
1
* RoHS compliant  
3
Type  
Package  
Ordering Code Marking Pin 1 PIN 2 PIN 3  
IDB12E120  
PG-TO263-3-2  
-
D12E120 NC  
C
A
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
V
Repetitive peak reverse voltage  
Continous forward current  
V
1200  
RRM  
I
A
F
T =25°C  
28  
17  
C
T =90°C  
C
Surge non repetitive forward current  
I
I
63  
FSM  
FRM  
T =25°C, t =10 ms, sine halfwave  
C
p
Maximum repetitive forward current  
42.5  
T =25°C, t limited by T  
, D=0.5  
C
p
jmax  
W
Power dissipation  
P
tot  
T =25°C  
96  
46  
C
T =90°C  
C
-55...+150  
°C  
°C  
Operating and storage temperature  
T , T  
j stg  
Soldering temperature  
T
245  
S
reflow soldering, MSL1  
Page 1  
Rev.2.2  
2007-09-01  
IDB12E120  
Thermal Characteristics  
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
Characteristics  
-
-
-
-
1.3  
62  
K/W  
Thermal resistance, junction - case  
Thermal resistance, junction - ambient, leaded  
SMD version, device on PCB:  
@ min. footprint  
R
R
R
thJC  
thJA  
thJA  
-
-
-
62  
-
2
1)  
@ 6 cm cooling area  
35  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
Unit  
µA  
V
min.  
typ. max.  
Static Characteristics  
Reverse leakage current  
I
R
V =1200V, T =25°C  
-
-
-
-
100  
R
j
V =1200V, T =150°C  
1000  
R
j
Forward voltage drop  
V
F
I =12A, T =25°C  
-
-
1.65  
1.7  
2.15  
-
F
j
I =12A, T =150°C  
F
j
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical without blown air.  
Page 2  
Rev.2.2  
2007-09-01  
IDB12E120  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
Dynamic Characteristics  
ns  
A
Reverse recovery time  
t
I
rr  
V =800V, I =12A, di /dt=800A/µs, T =25°C  
-
-
-
150  
215  
225  
-
-
-
R
F
F
j
V =800V, I =12A, di /dt=800A/µs, T =125°C  
R
F
F
j
V =800V, I =12A, di /dt=800A/µs, T =150°C  
R
F
F
j
Peak reverse current  
rrm  
V =800V, I = 12 A, di /dt=800A/µs, T =25°C  
-
-
-
17  
-
-
-
R
F
F
j
V =800V, I =12A, di /dt=800A/µs, T =125°C  
20.9  
21.5  
R
F
F
j
V =800V, I =12A, di /dt=800A/µs, T =150°C  
R
F
F
j
nC  
Reverse recovery charge  
Q
S
rr  
V =800V, I =12A, di /dt=800A/µs, T =25°C  
-
-
-
1200  
1840  
2025  
-
-
-
R
F
F
j
V =800V, I =12A, di /dt=800A/µs, T =125°C  
R
F
F
j
V =800V, I =12A, di /dt=800A/µs, T =150°C  
R
F
F
j
Reverse recovery softness factor  
V =800V, I =12A, di /dt=800A/µs, T =25°C  
-
-
-
5
-
-
-
R
F
F
j
V =800V, I =12A, di /dt=800A/µs, T =125°C  
5.8  
5.9  
R
F
F
j
V =800V, I =12A, di /dt=800A/µs, T =150°C  
R
F
F
j
Page 3  
Rev.2.2  
2007-09-01  
IDB12E120  
1 Power dissipation  
= f (T )  
2 Diode forward current  
I = f(T )  
P
tot  
C
F
C
parameter: T ≤ 150°C  
parameter: T ≤ 150°C  
j
j
100  
30  
W
A
80  
70  
60  
50  
40  
30  
20  
10  
0
20  
15  
10  
5
0
25  
50  
75  
100  
150  
25  
50  
75  
100  
150  
°C  
°C  
T
T
C
C
3 Typ. diode forward current  
I = f (V )  
4 Typ. diode forward voltage  
V = f (T )  
F
F
F
j
36  
2.4  
24A  
A
V
-55°C  
25°C  
28  
24  
20  
16  
12  
8
100°C  
150°C  
2
1.8  
1.6  
1.4  
1.2  
1
12A  
6A  
4
0
0
0.5  
1
1.5  
2
3
-60  
-20  
20  
60  
100  
160  
V
°C  
T
V
F
j
Page 4  
Rev.2.2  
2007-09-01  
IDB12E120  
5 Typ. reverse recovery time  
t = f (di /dt)  
6 Typ. reverse recovery charge  
Q =f(di /dt)  
rr  
F
rr  
F
parameter: V = 800V, T = 125°C  
parameter: V = 800V, T = 125 °C  
R j  
R
j
800  
2500  
nC  
ns  
24A  
12A  
24A  
12A  
6A  
2300  
2200  
2100  
2000  
1900  
1800  
1700  
1600  
1500  
1400  
1300  
600  
500  
400  
300  
200  
100  
0
6A  
200 300 400 500 600 700 800  
1000  
200 300 400 500 600 700 800  
1000  
A/µs  
di /dt  
A/µs  
di /dt  
F
F
7 Typ. reverse recovery current  
8 Typ. reverse recovery softness factor  
S = f(di /dt)  
I = f (di /dt)  
rr  
F
F
parameter: V = 800V, T = 125°C  
parameter: V = 800V, T = 125°C  
R j  
R
j
26  
15  
A
13  
12  
11  
10  
9
24A  
12A  
6A  
22  
20  
18  
16  
14  
12  
10  
8
8
7
24A  
12A  
6A  
6
5
4
3
6
2
200 300 400 500 600 700 800  
1000  
200 300 400 500 600 700 800  
1000  
A/µs  
A/µs  
di /dt  
di /dt  
F
F
Page 5  
Rev.2.2  
2007-09-01  
IDB12E120  
9 Max. transient thermal impedance  
= f (t )  
Z
thJC  
p
parameter : D = t /T  
p
10 1  
IDP12E120  
K/W  
10 0  
10 -1  
D = 0.50  
0.20  
10 -2  
0.10  
0.05  
0.02  
10 -3  
0.01  
single pulse  
10 -4  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
10 0  
s
t
p
Page 6  
Rev.2.2  
2007-09-01  
IDB12E120  
Page 7  
Rev.2.2  
2007-09-01  
IDB12E120  
Published by  
Infineon Technologies AG,  
Bereichs Kommunikation  
St.-Martin-Strasse 53,  
D-81541 München  
© Infineon Technologies AG 1999  
All Rights Reserved.  
Attention please!  
The information herein is given to describe certain components and shall not be considered as warranted  
characteristics.  
Terms of delivery and rights to technical change reserved.  
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,  
regarding circuits, descriptions and charts stated herein.  
Infineon Technologies is an approved CECC manufacturer.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest  
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the express  
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to  
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device  
or system Life support devices or systems are intended to be implanted in the human body, or to support  
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health  
of the user or other persons may be endangered.  
Page 8  
Rev.2.2  
2007-09-01  

相关型号：

IDB15E060

 Rectifier Diode, 1 Element, 15A, 600V V(RRM),
INFINEON

IDB15E60

 Fast Switching EmCon Diode
INFINEON

IDB15E60XT

 Rectifier Diode, 1 Phase, 1 Element, 29.2A, 600V V(RRM), Silicon, GREEN, PLASTIC, TO-220SMD, 3 PIN
INFINEON

IDB15E60_07

 Fast Switching EmCon Diode
INFINEON

IDB18E120

 Fast Switching EmCon Diode
INFINEON

IDB18E120ATMA1

 Rectifier Diode, 1 Phase, 1 Element, 31A, 1200V V(RRM), Silicon, PLASTIC, TO-220SMD, 3 PIN
INFINEON

IDB18E120_07

 Fast Switching EmCon Diode
INFINEON

IDB23E060

 Rectifier Diode, 1 Element, 23A, 600V V(RRM),
INFINEON

IDB23E60

 Fast Switching EmCon Diode
INFINEON

IDB23E60XT

 暂无描述
INFINEON

IDB23E60_07

 Fast Switching EmCon Diode
INFINEON

IDB30E060

 Rectifier Diode, 1 Element, 30A, 600V V(RRM),
INFINEON
©2020 ICPDF网 联系我们和版权申明