IDC15D120T6M [INFINEON]
Diode EMCON 4 Medium Power Chip; 二极管EMCON 4中功率芯片
| 型号： | IDC15D120T6M |
| 厂家： | 
Infineon |
| 描述： | Diode EMCON 4 Medium Power Chip |
| 文件： | 总4页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDC15D120T6M
Diode EMCON 4 Medium Power Chip
A
FEATURES:
This chip is used for:
·
·
·
·
1200V EMCON 4 technology
soft, fast switching
low reverse recovery charge
small temperature coefficient
·
low / medium power modules
C
Applications:
·
low / medium power drives
Chip Type
VR
IF
Die Size
4.28 x 3.40 mm2
Package
IDC15D120T6M
1200V 25A
sawn on foil
MECHANICAL PARAMETER:
Raster size
4.28 x 3.40
14.55 / 8.89
3.326 x 2.446
110
Area total / active
Anode pad size
Thickness
mm2
µm
mm
deg
Wafer size
150
Flat position
180
Max. possible chips per wafer
Passivation frontside
Pad metall
1026 pcs
Photoimide
3200 nm AlSiCu
Ni Ag –system
Backside metall
Die bond
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Wire bond
Al, £500µm
Reject ink dot size
Æ 0.65mm; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Recommended storage environment
Edited by INFINEON Technologies, AIM PMD D CID T, L4669B, Edition 0.9, 26.06.07
IDC15D120T6M
Maximum Ratings
Parameter
Symbol
Condition
Value
Unit
Repetitive peak reverse voltage
VR R M
1200
V
Continuous forward current limited by
1 )
IF
T
jmax
A
Maximum repetitive forward current
IF R M
50
limited by T
jmax
Maximum junction and storage
temperature
Tvj,max
Ts t g
,
-40...+175
°C
Reverse bias safe operating area2)
(RBSOA)
IF,max = 50A, VR,max = 1200V, Tvj,op £ 150°C, Pmax = tbd kW
1 ) depending on thermal properties of assembly
2 ) not subject to production test - verified by design/characterisation
Static Electrical Characteristics (tested on wafer), T =25 °C
j
Value
Parameter
Symbol
Unit
Conditions
min.
Typ.
max.
5.2
Reverse leakage current
IR
VR=12 00V
µA
V
Tj=25 ° C
Tj=25°C
Tj=25 ° C
Cathode-Anode
breakdown Voltage
VBr
VF
IR=0. 25mA
IF= 25A
1200
1.35
Forward voltage drop
1.7
2.05
V
Dynamic Electrical Characteristics inductive load (not subject to production test - verified by
design/characterization)
2)
Value
Parameter
Symbol
Unit
Conditions
Tj = 25 °C
min.
Typ.
max.
IF=A
Peak reverse recovery
current
di/dt=A/ ms
VR=V
Tj = 125 °C
Tj = 150 °C
IR M
tbd
A
VGE =-1 5V
IF=A
Reverse recovery
charge
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
di/dt=A/ ms
VR=V
Qr
tbd
tbd
µC
mJ
VGE =-1 5V
IF=A
Reverse recovery energy
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
di/dt=A/ ms
VR=V
Erec
VGE =-1 5V
2) values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies, AIM PMD D CID T, L4669B, Edition 0.9, 26.06.07
IDC15D120T6M
CHIP DRAWING:
Edited by INFINEON Technologies, AIM PMD D CID T, L4669B, Edition 0.9, 26.06.07
IDC15D120T6M
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
tbd
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see
address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies, AIM PMD D CID T, L4669B, Edition 0.9, 26.06.07
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