IDD03SG60C [INFINEON]
3rd Generation thinQ!TM SiC Schottky Diode; 第三代的thinQ ！ TM SiC肖特基二极管
| 型号： | IDD03SG60C |
| 厂家： | 
Infineon |
| 描述： | 3rd Generation thinQ!TM SiC Schottky Diode |
| 文件： | 总7页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDD03SG60C
3rd Generation thinQ!TM SiC Schottky Diode
Features
Product Summary
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
V DC
600
3.2
3
V
nC
A
Q C
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
I F; T C< 130 °C
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
• Halogen-free according to IEC 61249-2-21 definition
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Type
Package
Marking
Pin 1
Pin 2
Pin 3
IDD03SG60C
PG-TO252-3
D03G60C
n.c.
A
C
Maximum ratings
Parameter
Value
Symbol Conditions
Unit
I F
T C<130 °C
Continuous forward current
3
11.5
9.7
A
I F,SM
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
T C=25 °C, t p=10 µs
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
T j=25 °C
Surge non-repetitive forward current,
sine halfwave
I F,max
Non-repetitive peak forward current
100
∫i 2dt
A2s
0.61
0.44
600
i ²t value
V RRM
dv/ dt
P tot
Repetitive peak reverse voltage
Diode dv/dt ruggedness
V
VR= 0….480 V
50
V/ns
W
T C=25 °C
Power dissipation
38
T j, T stg
Operating and storage temperature
-55 ... 175
260
°C
Soldering temperature, reflow
soldering (max)
T sold
reflow MSL1
page 1
Rev. 2.0
2010-03-19
IDD03SG60C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
3.9
75
K/W
SMD version, device
R thJA
on PCB, minimal
footprint
Thermal resistance, junction -
ambient
SMD version, device
on PCB, 6 cm2 cooling
area5)
-
50
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V DC
V F
I R=0.05 mA, T j=25 °C
I F=3 A, T j=25 °C
DC blocking voltage
Diode forward voltage
600
-
-
2.3
-
V
-
-
-
-
2.1
2.8
0.23
1
I F=3 A, T j=150 °C
V R=600 V, T j=25 °C
V R=600 V, T j=150 °C
I R
Reverse current
15
150
µA
AC characteristics
V R=400 V,I F≤I F,max
di F/dt =200 A/µs,
T j=150 °C
,
Q c
t c
Total capacitive charge
-
-
-
-
-
3.2
-
-
nC
Switching time3)
<10 ns
V R=1 V, f =1 MHz
Total capacitance
C
60
8
-
-
-
pF
V R=300 V, f =1 MHz
V R=600 V, f =1 MHz
8
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.
3) tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and
di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection.
4) Under worst case Zth conditions.
5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air
6) Only capacitive charge occuring, guaranteed by design.
Rev. 2.0
page 2
2010-03-19
IDD03SG60C
1 Power dissipation
2 Diode forward current
I F=f(T C)4); T j≤175 °C; parameter: D = tp/T
P
tot=f(T C); parameter: RthJC(max)
40
35
30
25
20
15
10
5
30
25
0.1
20
15
0.3
0.5
10
0.7
1
5
0
0
25
75
125
175
25
75
125
175
T
C [°C]
T
C [°C]
3 Typ. forward characteristic
4 Typ. forward characteristic in surge current
mode
I F=f(VF); t p=400 µs; parameter:T j
I F=f(VF); t p=400 µs; parameter: T j
3
15
12
9
150ºC
25ºC
-55ºC
100ºC
175ºC
2
1
0
25ºC
-55ºC
175ºC
6
3
0
150ºC
100ºC
0
1
2
3
4
0
2
4
6
8
V F[V]
V F[V]
Rev. 2.0
page 3
2010-03-19
IDD03SG60C
6 Typ. reverse current vs. reverse voltage
5 Typ. capacitance charge vs. current slope
Q C=f(di F/dt )6); I F≤I F,max
I R=f(VR); parameter: T j
10-5
3.5
3
10-6
10-7
2.5
2
175 °C
150 °C
100 °C
25 °C
1.5
1
10-8
10-9
-55 °C
0.5
0
10-10
100
400
700
1000
100
200
300
400
500
600
V
R [V]
di F/d t [A/µs]
7 Typ. transient thermal impedance
8 Typ. capacitance vs. reverse voltage
Z
thJC=f(t p); parameter: D = t P/T
C =f(V R); T C=25 °C, f =1 MHz
101
80
70
60
50
40
30
20
10
0
0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
0
10-2
10-6
10-5
10-4
10-3
10-2
10-1
10-1
100
101
102
103
V
R [V]
t
P [s]
Rev. 2.0
page 4
2010-03-19
IDD03SG60C
9 Typ. C stored energy
E C=f(V R)
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
0
100
200
300
400
500
600
V
R [V]
Rev. 2.0
page 5
2010-03-19
IDD03SG60C
PG-TO252-3: Outline
Dimensions in mm/inches
Rev. 2.0
page 6
2010-03-19
IDD03SG60C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 7
2010-03-19
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