IDD04S60C [INFINEON]
2nd Generation thinQ! SiC Schottky Diode; 第二代的thinQ ！ SiC肖特基二极管
| 型号： | IDD04S60C |
| 厂家： | 
Infineon |
| 描述： | 2nd Generation thinQ! SiC Schottky Diode |
| 文件： | 总7页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDD04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features
Product Summary
V DC
Q c
I F
600
8
V
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
nC
A
4
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
PG-TO252
3
1
2
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
Package
Marking
Pin 1
Pin 2
Pin 3
IDD04S60C
PG-TO252
D04S60C
n.c.
A
C
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I F
T C<130 °C
f =50 Hz
Continuous forward current
RMS forward current
4
A
I F,RMS
5.6
Surge non-repetitive forward current,
sine halfwave
I F,SM
T C=25 °C, t p=10 ms
32
18
T j=150 °C,
T C=100 °C, D =0.1
I F,RM
Repetitive peak forward current
I F,max
T C=25 °C, t p=10 µs
T C=25 °C, t p=10 ms
Non-repetitive peak forward current
i ²t value
132
5.1
∫i 2dt
A2s
V
V RRM
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
600
V
R = 0….480V
dv/ dt
P tot
50
V/ns
W
T C=25 °C
37
T j, T stg
Operating and storage temperature
-55 ... 175
°C
Rev. 2.0
page 1
2006-04-03
IDD04S60C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
4.1
75
K/W
SMD version, device
Thermal resistance,
junction - ambient
on PCB, minmal
footprint
R thJA
SMD Version, device
on PCB, 6 cm2
cooling3)
-
-
-
-
50
Soldering temperature
reflowsoldering
Tsold
reflow MSL 3
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V DC
V F
I R=0.05 mA
DC blocking voltage
Diode forward voltage
600
-
-
V
I F=4 A, T j=25 °C
I F=4 A, T j=150 °C
V R=600 V, T j=25 °C
-
-
-
1.7
2
1.9
2.4
50
I R
Reverse current
0.5
µA
V R=600 V, T j=150 °C
-
2
500
AC characteristics
V R=400 V,I F≤I F,max
di F/dt =200 A/µs,
T j=150 °C
,
Q c
t c
Total capacitive charge
Switching time4)
-
-
-
-
-
8
-
-
nC
<10 ns
V R=1 V, f = MHz
C
130
20
20
-
-
-
pF
V R=300 V, f =1 MHz
V R=600 V, f =1 MHz
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions, for a time periode of 5ms at 5 mA.
3) Device on 40mm*40mm*1.5mm epox PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertikal with out blown air.
4) tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and
di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection.
5) Only capacitive charge occuring, guaranteed by design.
Rev. 2.0
page 2
2006-04-03
IDD04S60C
1 Power dissipation
tot=f(T C)
2 Diode forward current
I F=f(T C); T j≤175 °C
P
parameter: RthJC(max)
parameter: R thJC(max); V F(max)
40
9
8
7
6
5
4
3
2
1
0
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
200
25
50
75
100
125
150
175
200
T
C [°C]
T
C [°C]
3 Typ. forward characteristic
I F=f(V F); t p=400 µs
parameter: T j
4 Typ. forward characteristic in surge current
mode
I F=f(V F); t p=400 µs; parameter: Tj
8
40
175ºC
-55ºC
150ºC
150ºC
25ºC
100ºC
7
6
5
4
3
2
1
0
30
-55ºC
20
175ºC
25ºC
10
100ºC
0
0
1
2
3
4
0
2
4
6
8
10
VF[V]
VF[V]
Rev. 2.0
page 3
2006-04-03
IDD04S60C
6 Typ. reverse current vs. reverse voltage
5 Typ. forward power dissipation vs.
average forward current
I R=f(V R)
P
F,AV=f(I F), T C=100 °C, parameter: D =t p/T
parameter: T j
101
20
0.1
0.5
1
0.2
18
16
14
12
10
8
100
175 °C
150 °C
10-1
10-2
10-3
100 °C
25 °C
6
-55 °C
4
2
10-4
100
0
200
300
400
R [V]
500
600
0
2
4
6
8
I
F(AV) [A]
V
7 Transient thermal impedance
thJC=f(t p)
8 Typ. capacitance vs. reverse voltage
Z
C =f(V R); T C=25 °C, f =1 MHz
parameter: D =t p/T
101
200
175
150
125
100
75
0.5
100
0.2
0.1
0.05
0.02
10-1
50
single pulse
25
10-2
0
10-5
10-4
10-3
10-2
10-1
10-1
100
101
102
103
t
P [s]
VR [V]
Rev. 2.0
page 4
2006-04-03
IDD04S60C
10 Typ. capacitance charge vs. current slope
9 Typ. C stored energy
Q C=f(di F/dt )5); T j=150 °C; I F≤I F,max
E C=f(V R)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
8
6
4
2
0
0
100
200
300
400
500
600
100
400
700
1000
V
R [V]
di F/dt [A/µs]
Rev. 2.0
page 5
2006-04-03
IDD04S60C
Package Outline:PG-TO252-3-1/TO252-3-11/TO252-3-21
Dimensions in mm/inches:
Rev. 2.0
page 6
2006-04-03
IDD04S60C
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.0
page 7
2006-04-03
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