IDFW60C65D1 [INFINEON]
Rapid 1 开关650 V, 60 A 发射极控制硅功率二极管，具有TO-247高级绝缘封装和共阴极配置，是经济有效的解决方案。;
| 型号： | IDFW60C65D1 |
| 厂家： | 
Infineon |
| 描述： | Rapid 1 开关650 V, 60 A 发射极控制硅功率二极管，具有TO-247高级绝缘封装和共阴极配置，是经济有效的解决方案。 开关 二极管 |
| 文件： | 总11页 (文件大小：1330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDFW60C65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀAdvancedꢀIsolation
RapidꢀSwitchingꢀEmitterꢀControlledꢀDiodeꢀinꢀfullyꢀisolatedꢀpackage
ꢀ
Features:
A2
A1
•ꢀ650VꢀEmitterꢀControlledꢀtechnology
•ꢀTemperatureꢀstableꢀbehaviourꢀofꢀkeyꢀparameters
•ꢀLowꢀforwardꢀvoltageꢀ(VF)
•ꢀLowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)
•ꢀLowꢀreverseꢀrecoveryꢀcurrentꢀ(Irrm
)
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀ2500ꢀVRMSꢀelectricalꢀisolation,ꢀ50/60ꢀHz,ꢀtꢀ=ꢀ1ꢀmin
•ꢀ100ꢀ%ꢀtestedꢀisolatedꢀmountingꢀsurface
•ꢀPb-freeꢀleadꢀplating
C
•ꢀRoHSꢀcompliant
PotentialꢀApplications:
•ꢀAirꢀConditioning
•ꢀGPDꢀ(GeneralꢀPurposeꢀDrives)
•ꢀIndustrialꢀSMPS
Packageꢀpinꢀdefinition:
Fully isolated package TO-247
•ꢀPinꢀ1ꢀ-ꢀanodeꢀ(A1)
•ꢀPinꢀ2ꢀ-ꢀcathodeꢀ(C)
•ꢀPinꢀ3ꢀ-ꢀanodeꢀ(A2)
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDECꢀ47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
Vrrm
If
Vf,ꢀTvj=25°C
Tvjmax
Marking
Package
IDFW60C65D1
650V 2x 30A
1.45V
175°C
C60ED1
PG-TO247-3-AI
Datasheet
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.2
www.infineon.com
2019-05-20
IDFW60C65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀAdvancedꢀIsolation
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistances (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Datasheet
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IDFW60C65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀAdvancedꢀIsolation
MaximumꢀRatingsꢀ(perꢀleg)
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Repetitiveꢀpeakꢀreverseꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VRRM
650
V
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Thꢀ=ꢀ25°C
Thꢀ=ꢀ65°C
IF
56.0
43.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
IFSM
90.0
A
A
Diode surge non repetitive forward current
Thꢀ=ꢀ25°C,ꢀtpꢀ=ꢀ10.0ms,ꢀsineꢀhalfwave
240.0
PowerꢀdissipationꢀThꢀ=ꢀ25°C
PowerꢀdissipationꢀThꢀ=ꢀ65°C
100.0
73.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
IsolationꢀvoltageꢀRMS,ꢀfꢀ=ꢀ50/60Hz,ꢀtꢀ=ꢀ1min1)
M
Nm
V
Visol
2500
ThermalꢀResistancesꢀ(perꢀleg)
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
Diode thermal resistance,2)
junction - heatsink
Rth(j-h)
Rth(j-a)
-
-
1.37 1.50 K/W
Thermal resistance
junction - ambient
-
65 K/W
ElectricalꢀCharacteristicsꢀ(perꢀleg),ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
IFꢀ=ꢀ30.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ175°C
-
-
-
1.45 1.75
Diode forward voltage
VF
V
1.42
1.40
-
-
VRꢀ=ꢀ650V
Tvjꢀ=ꢀ25°C
Reverse leakage current3)
IR
-
-
-
40
-
µA
Tvjꢀ=ꢀ175°C
1200
1) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
2) At force on body F = 500N, Ta = 25°C
3) Reverse leakage current per leg specified for operating conditions with zero voltage applied to the other leg.
Datasheet
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IDFW60C65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀAdvancedꢀIsolation
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
-
13.0
-
nH
SwitchingꢀCharacteristicsꢀ(perꢀleg),ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
65
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ30.0A,
diF/dtꢀ=ꢀ1000A/µs,
Lσꢀ=ꢀ30nH,
Qrr
0.76
17.6
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1360
-
A/µs
Cσꢀ=ꢀ40pF,
switch IGW50N65H5.
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
112
0.47
4.5
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ30.0A,
diF/dtꢀ=ꢀ200A/µs,
Lσꢀ=ꢀ30nH,
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-655
-
A/µs
Cσꢀ=ꢀ40pF,
switch IGW50N65H5.
SwitchingꢀCharacteristicsꢀ(perꢀleg),ꢀInductiveꢀLoad
Parameter Symbol Conditions
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C/125°C
Value
Unit
min. typ. max.
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
102
1.80
25.9
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ30.0A,
diF/dtꢀ=ꢀ1000A/µs,
Lσꢀ=ꢀ30nH,
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-995
-
A/µs
Cσꢀ=ꢀ40pF,
switch IGW50N65H5.
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
148
0.98
8.5
-
-
-
ns
µC
A
Tvjꢀ=ꢀ125°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ30.0A,
diF/dtꢀ=ꢀ200A/µs,
Lσꢀ=ꢀ30nH,
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-485
-
A/µs
Cσꢀ=ꢀ40pF,
switch IGW50N65H5.
Datasheet
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IDFW60C65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀAdvancedꢀIsolation
100
90
80
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Th,ꢀHEATSINKꢀTEMPERATUREꢀ[°C]
Th,ꢀHEATSINKꢀTEMPERATUREꢀ[°C]
Figure 1. Powerꢀdissipationꢀperꢀlegꢀasꢀaꢀfunctionꢀof
heatsinkꢀtemperature
Figure 2. Diodeꢀforwardꢀcurrentꢀperꢀlegꢀasꢀaꢀfunctionꢀof
heatsinkꢀtemperature
(Tvj≤175°C)
(Tvj≤175°C)
200
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ30A
Tvjꢀ=ꢀ125°C,ꢀIFꢀ=ꢀ30A
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ30A
1
180
160
140
120
100
80
D = 0.5
0.2
0.1
0.01
0.1
0.05
0.02
0.01
single pulse
0.001
60
40
1E-4
20
i:
1
2
3
4
5
6
7
ri[K/W]: 0.202274 0.337235 0.289542 0.199229 0.422136 0.046667 9.6E-3
τi[s]: 2.4E-4 1.4E-3 8.6E-3 0.071422 0.525208 3.996801 20.96846
1E-5
0
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
200
400
600
800
1000
1200
1400
tp,ꢀPULSEꢀWIDTHꢀ[s]
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 3. Diodeꢀtransientꢀthermalꢀimpedanceꢀperꢀlegꢀas Figure 4. Typicalꢀreverseꢀrecoveryꢀtimeꢀperꢀlegꢀasꢀa
aꢀfunctionꢀofꢀpulseꢀwidth
functionꢀofꢀdiodeꢀcurrentꢀslope
(D=tp/T)
(VR=400V)
Datasheet
5
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2019-05-20
IDFW60C65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀAdvancedꢀIsolation
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
35
30
25
20
15
10
5
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ30A
Tvjꢀ=ꢀ125°C,ꢀIFꢀ=ꢀ30A
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ30A
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ30A
Tvjꢀ=ꢀ125°C,ꢀIFꢀ=ꢀ30A
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ30A
0
200
400
600
800
1000
1200
1400
200
400
600
800
1000
1200
1400
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 5. Typicalꢀreverseꢀrecoveryꢀchargeꢀperꢀlegꢀasꢀa Figure 6. Typicalꢀpeakꢀreverseꢀrecoveryꢀcurrentꢀperꢀleg
functionꢀofꢀdiodeꢀcurrentꢀslope
asꢀaꢀfunctionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
0
-200
60
50
40
30
20
10
0
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ30A
Tvjꢀ=ꢀ125°C,ꢀIFꢀ=ꢀ30A
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ30A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
-400
-600
-800
-1000
-1200
-1400
-1600
-1800
-2000
200
400
600
800
1000
1200
1400
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 7. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀrev.ꢀrec.
Figure 8. Typicalꢀdiodeꢀforwardꢀcurrentꢀperꢀlegꢀasꢀa
currentꢀperꢀlegꢀasꢀaꢀfunctionꢀofꢀdiodeꢀcurrent
functionꢀofꢀforwardꢀvoltage
slope
(VR=400V)
Datasheet
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2019-05-20
IDFW60C65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀAdvancedꢀIsolation
2.25
IFꢀ=ꢀ7.5A
IFꢀ=ꢀ15A
IFꢀ=ꢀ30A
IFꢀ=ꢀ45A
IFꢀ=ꢀ60A
2.00
1.75
1.50
1.25
1.00
0.75
0.50
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀdiodeꢀforwardꢀvoltageꢀperꢀlegꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
Datasheet
7
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2019-05-20
IDFW60C65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀAdvancedꢀIsolation
PG-TO247-3-AI (PGHSIP2473)
MILLIMETERS
DIMENSIONS
MIN.
MAX.
DOCUMENT NO.
A
A1
A2
A3
b
-
5.18
Z8B00186434
4.70
2.23
0.20
1.10
0.50
22.20
16.96
15.70
13.68
4.90
2.59
REVISION
0.28
02
1.30
SCALE 3:1
c
0.70
D
22.40
17.16
15.90
13.88
0 1
2 3 4 5 6 7 8mm
D1
E
EUROPEAN PROJECTION
E1
e
5.44
L
18.31
2.76
3.50
5.70
5.96
18.91
2.96
3.70
5.90
6.36
L1
øP
øP1
Q
ISSUE DATE
05.06.2018
Note:
For a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential
penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in International Standard (IEC6006826 and
IEC60068227). The advanced isolation device is intended only to be used assembled on an appropriate heatsink with recommended flatness
of <20µm per 100mm and roughness of <10µm.
Datasheet
8
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2019-05-20
IDFW60C65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀAdvancedꢀIsolation
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
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2019-05-20
IDFW60C65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀAdvancedꢀIsolation
RevisionꢀHistory
IDFW60C65D1
Revision:ꢀ2019-05-20,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2018-06-20 Final data sheet
2019-05-20 New marking description
2.1
2.2
Datasheet
10
Vꢀ2.2
2019-05-20
Trademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
ꢀ
ꢀ
ꢀ
ꢀ
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀInfineonꢀTechnologiesꢀAGꢀ2019.
AllꢀRightsꢀReserved.
ImportantꢀNotice
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics
(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany
informationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀand
liabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthird
party.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀof
theꢀproductꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀof
customer’sꢀtechnicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀthe
completenessꢀofꢀtheꢀproductꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Forꢀfurtherꢀinformationꢀonꢀtheꢀproduct,ꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearest
InfineonꢀTechnologiesꢀofficeꢀ(www.infineon.com).
PleaseꢀnoteꢀthatꢀthisꢀproductꢀisꢀnotꢀqualifiedꢀaccordingꢀtoꢀtheꢀAECꢀQ100ꢀorꢀAECꢀQ101ꢀdocumentsꢀofꢀtheꢀAutomotive
ElectronicsꢀCouncil.
Warnings
Dueꢀtoꢀtechnicalꢀrequirementsꢀproductsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion
pleaseꢀcontactꢀyourꢀnearestꢀInfineonꢀTechnologiesꢀoffice.
ExceptꢀasꢀotherwiseꢀexplicitlyꢀapprovedꢀbyꢀInfineonꢀTechnologiesꢀinꢀaꢀwrittenꢀdocumentꢀsignedꢀbyꢀauthorized
representativesꢀofꢀInfineonꢀTechnologies,ꢀInfineonꢀTechnologies’ꢀproductsꢀmayꢀnotꢀbeꢀusedꢀinꢀanyꢀapplicationsꢀwhereꢀa
failureꢀofꢀtheꢀproductꢀorꢀanyꢀconsequencesꢀofꢀtheꢀuseꢀthereofꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀresultꢀinꢀpersonalꢀinjury.
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