IDH06G65C6 [INFINEON]
CoolSiC™ 肖特基二极管 650V G6是英飞凌先进的 SiC 肖特基势垒二极管技术，充分发挥在硅上使用 SiC 的全部优势。英飞凌专有创新焊接工艺结合更加紧凑的设计、薄晶圆技术以及全新肖特基金属系统。打造的系列产品具有同类产品中极其优秀的的品质因数 (Qc x VF)，在各种负载条件下都表现出更高的效率。;
| 型号： | IDH06G65C6 |
| 厂家： | 
Infineon |
| 描述： | CoolSiC™ 肖特基二极管 650V G6是英飞凌先进的 SiC 肖特基势垒二极管技术，充分发挥在硅上使用 SiC 的全部优势。英飞凌专有创新焊接工艺结合更加紧凑的设计、薄晶圆技术以及全新肖特基金属系统。打造的系列产品具有同类产品中极其优秀的的品质因数 (Qc x VF)，在各种负载条件下都表现出更高的效率。 局域网 功效 测试 光电二极管 肖特基二极管 |
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| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDH06G65C6
6th Generation CoolSiC™
650V SiC Schottky Diode
The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Schottky barrier
diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further
advancements like a novel Schottky metal system. The result is a family of products with improved efficiency
over all load conditions, resulting from a lower figure of merit (Qc x VF). The CoolSiC™ Schottky diode 650 V G6
has been designed to complement our 600 V and 650 V CoolMOS™ 7 families, meeting the most stringent
application requirements in this voltage range.
PG-TO220-2
Table 1
Key performance parameters
Parameter
VRRM
Value
650
9.6
Unit
V
CASE
QC (VR = 400 V)
EC (VR = 400 V)
nC
µJ
A
1.6
1) Cathode
2) Anode
IF (TC ≤ 145 °C, D = 1)
VF (IF = 6 A, Tj = 25 °C)
6
1
1.25
V
2
Table 2
Package information
Type / ordering Code
IDH06G65C6
Package
Marking
D0665C6
PG-TO220-2
Features
Best in class forward voltage (1.25 V)
Best in class figure of merit (Qc x VF)
High dv/dt ruggedness (150 V/ns)
Benefits
System efficiency improvement
System cost and size savings due to the reduced cooling requirements
Enabling higher frequency and increased power density
Potential Applications
Power factor correction in SMPS
Solar inverter
Uninterruptible power supply
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22)
Final Datasheet
Please read the Important Notice and Warnings at the end of this document
Rev. 2.0, 2017-05-23
6th Generation CoolSiCTM
Table of Content
1
2
Maximum ratings ...............................................................................................................................3
Thermal characteristics .....................................................................................................................3
3
3.1
3.2
Electrical characteristics ....................................................................................................................4
Static characteristics...............................................................................................................................4
AC characteristics....................................................................................................................................4
4
5
6
Diagrams............................................................................................................................................5
Simplified forward characteristic.......................................................................................................7
Package outlines................................................................................................................................8
Final Datasheet
2
Rev. 2.0, 2017-05-23
6th Generation CoolSiCTM
1
Maximum ratings
Table 3
Maximum ratings
Values
Typ.
Parameter
Symbol
Unit Note/Test condition
Min.
Max.
6
–
–
–
–
–
–
TC ≤ 145 °C, D = 1
TC ≤ 125 °C, D = 1
TC ≤ 25 °C, D = 1
Continuous forward current
IF
9
16
Surge-repetitive forward current,
sine halfwave1
IF,RM
–
–
26
TC = 25 °C, tp = 10 ms
A
–
–
–
–
38
30
TC = 25 °C, tp = 10 ms
TC = 150 °C, tp = 10 ms
Surge non-repetitive forward
current, sine halfwave
IF,SM
Non-repetitive peak forward
current
IF,max
∫ i²dt
–
–
410
TC = 25 °C, tp = 10 µs
–
–
–
–
–
–
–
–
–
–
7.2
4.6
650
150
54
TC = 25 °C, tp = 10 ms
A²s
i²t value
TC = 150 °C, tp = 10 ms
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
VRRM
V
TC = 25 °C
dv/dt
V/ns VR = 0..480 V
Ptot
Tj
Tstg
W
TC = 25°C, RthJC,max
Operating and storage
temperature
-55
–
–
175
70
°C
–
Mounting torque
–
–
Ncm M3 screw
2
Thermal characteristics
Table 4
Thermal characteristics (PG-TO-220-2)
Values
Parameter
Symbol
Min.
Unit Note/Test condition
Typ.
Max.
2.8
Thermal resistance, junction-
case
RthJC
RthJA
–
–
1.7
–
K/W
Thermal resistance, junction-
ambient
–
–
62
leaded
Soldering temperature,
wavesoldering only allowed at
leads
1.6 mm (0.063 in.) from
case for 10 s
Tsold
–
260
°C
1 The surge-repetitive forward current test was performed with 1000 pulses (half-wave rectified sine with the 10 ms period).
Final Datasheet Rev. 2.0, 2017-05-23
3
6th Generation CoolSiCTM
3
Electrical characteristics
3.1
Static characteristics
Static characteristics
Symbol
Table 5
Parameter
Values
Typ.
Unit Note/Test condition
Min.
650
–
Max.
–
DC blocking voltage
VDC
VF
–
Tj = 25 °C
1.25
1.5
0.6
20
1.35
–
V
IF = 6 A, Tj = 25 °C
Diode forward voltage
–
IF = 6 A, Tj = 150 °C
VR = 420 V, Tj = 25 °C
VR = 420 V, Tj = 125 °C
VR = 420 V, Tj = 150 °C
–
20
–
Reverse current
IR
–
µA
–
46
–
3.2
AC characteristics
Table 6
Parameter
AC characteristics
Values
Symbol
Qc
Unit Note/Test Condition
Min.
Typ.
Max.
VR = 400 V, Tj = 150 °C,
nC
Total capacitive charge
Total capacitance
–
9.6
–
di/dt = 200 A/µs, IF ≤ IF,MAX
VR = 1 V, f = 1 MHz,
Tj = 25 °C
–
–
–
302
18
–
–
–
VR = 300 V, f = 1 MHz,
Tj = 25 °C
C
pF
VR = 600 V, f = 1 MHz,
Tj = 25 °C
17
Final Datasheet
4
Rev. 2.0, 2017-05-23
6th Generation CoolSiCTM
4
Diagrams
Ptot = f(TC)
IF = f(TC); RthJC,max ; Tj ≤ 175 °C; parameter: D = tP/T
Figure 1
Power dissipation
Figure 2
Max. forward current
IF = f(VF); tp = 10 µs; parameter: Tj
IF = f(VF); tp = 10 µs; parameter: Tj
Figure 3
Typ. forward characteristics
Figure 4
Typ. forward characteristics
in surge current
Final Datasheet
5
Rev. 2.0, 2017-05-23
6th Generation CoolSiCTM
QC = f(diF/dt); Tj = 150 °C; VR = 400 V; IF ≤ IF,max
IR = f(VR); parameter: Tj
Figure 5
Typ. cap. charge vs. current slope
Figure 6
Typ. reverse current vs. reverse voltage
Zth,jc = f(tP); parameter: D = tP/T
Max. transient thermal
impedance
C = f(VR); Tj = 25 °C; f = 1 MHz
Figure 7
Figure 8
Typ. capacitance vs. reverse voltage
Final Datasheet
6
Rev. 2.0, 2017-05-23
6th Generation CoolSiCTM
EC = f(VR)
Figure 9
Typ. capacitance stored energy
5
Simplified forward characteristic
VF VTH RDIFF IF
Treshold voltage (VTH):
VTH Tj 0.001Tj 0.766
V
Differential resistance (RDIFF):
2
RDIFF Tj ATj BTj C
A 2.0710-6
DIFF
B 1.5010-4
TH
C 7.9410-2
VF = f(IF)
Tj [°C]; -55 °C ≤ Tj ≤ 175 °C; IF ≤ 6 A
Figure 10 Equivalent forward current curve
Figure 11 Mathematical Equation
Final Datasheet
7
Rev. 2.0, 2017-05-23
6th Generation CoolSiCTM
6
Package outlines
Figure 12 Outlines of the package PG-TO220-2, dimensions in mm/inches
Final Datasheet
8
Rev. 2.0, 2017-05-23
6th Generation CoolSiCTM
Revision History
Major changes since the last revision
Revision
2.0
Date
Subject (major changes since last revision)
Release of final version
2017-05-23
Final Datasheet
9
Rev. 2.0, 2017-05-23
Other Trademarks
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
Edition 2017-05-23
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
Published by
characteristics (“Beschaffenheitsgarantie”).
contact your nearest Infineon Technologies office
(www.infineon.com).
Infineon Technologies AG
81726 München, Germany
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
© 2017 Infineon Technologies AG.
All Rights Reserved.
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Email: erratum@infineon.com
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to evaluate the suitability of the product for the
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respect to such application.
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