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IDH08G65C5_12 [INFINEON]

ThinQ!â¢ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.; THINQ ！一个?? ¢ 5代表示，英飞凌领先的技术优势为SiC肖特基势垒二极管。

IDH08G65C5_12


元器件型号：	IDH08G65C5_12
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	ThinQ!â¢ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. THINQ ！一个?? ¢ 5代表示，英飞凌领先的技术优势为SiC肖特基势垒二极管。二极管
PDF文件：	总13页 (文件大小：1156K)
下载文档：	下载PDF数据表文档文件
型号参数：IDH08G65C5_12参数

IDH08S120

thinQ SiC Schottky Diode

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21 INFINEON

IDH08S120AKSA1

Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 1200V V(RRM), Silicon Carbide, TO-220AC, GREEN, PLASTIC, TO-220, 2 PIN

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0 INFINEON

IDH08S60C

2ndGeneration thinQ!TM SiC Schottky Diode

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16 INFINEON

IDH08S60C

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon Carbide, TO-220AC, GREEN, PLASTIC, TO-220, 2 PIN

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0 INFINEON

IDH08SG60C

3rd Generation thinQ!TM SiC Schottky Diode

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45 INFINEON

IDH08SG60CXKSA1

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon Carbide, TO-220AC, GREEN, PLASTIC, TO-220, 2 PIN

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1 INFINEON

IDH09E120

Rectifier Diode, 1 Phase, 1 Element, 23A, 1200V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC, TO-220, 2 PIN

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0 INFINEON

IDH09G65C5

650V SiC thinQ!â¢ Generation 5 diodes

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14 INFINEON

IDH09G65C5_12

ThinQ!â¢ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

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11 INFINEON

IDH09SG60C

3rd Generation thinQ!TM SiC Schottky Diode

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15 INFINEON

IDH09SG60CXKSA2

Rectifier Diode, Schottky, 1 Phase, 1 Element, 9A, 600V V(RRM), Silicon Carbide, TO-220AC, GREEN, PLASTIC, TO-220, 2 PIN

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0 INFINEON

IDH10G120C5

Silicon Carbide Schottky Diode

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1 INFINEON

IDH10G120C5_15

Silicon Carbide Schottky Diode

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0 INFINEON

IDH10G65C5

650V SiC thinQ!â¢ Generation 5 diodes

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61 INFINEON

IDH10G65C5_12

ThinQ!â¢ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

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29 INFINEON

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