IDH09G65C5_12 [INFINEON]

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.; THINQ !一个?? ¢ 5代表示,英飞凌领先的技术优势为SiC肖特基势垒二极管。
IDH09G65C5_12
元器件型号: IDH09G65C5_12
生产厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述和应用:

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
THINQ !一个?? ¢ 5代表示,英飞凌领先的技术优势为SiC肖特基势垒二极管。

二极管
PDF文件: 总11页 (文件大小:1174K)
下载文档:  下载PDF数据表文档文件
型号参数:IDH09G65C5_12参数

IDH09SG60C

3rd Generation thinQ!TM SiC Schottky Diode

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15 INFINEON

IDH09SG60CXKSA2

Rectifier Diode, Schottky, 1 Phase, 1 Element, 9A, 600V V(RRM), Silicon Carbide, TO-220AC, GREEN, PLASTIC, TO-220, 2 PIN

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0 INFINEON

IDH10G120C5

Silicon Carbide Schottky Diode

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1 INFINEON

IDH10G120C5_15

Silicon Carbide Schottky Diode

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0 INFINEON

IDH10G65C5

650V SiC thinQ!™ Generation 5 diodes

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61 INFINEON

IDH10G65C5_12

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

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29 INFINEON

IDH10S120

thinQ!TM SiC Schottky Diode

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36 INFINEON

IDH10S120AKSA1

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 1200V V(RRM), Silicon Carbide, TO-220AC, GREEN, PLASTIC, TO-220, 2 PIN

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0 INFINEON

IDH10S60C

2ndGeneration thinQ!TM SiC Schottky Diode

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15 INFINEON

IDH10S60C

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon Carbide, TO-220AC, GREEN, PLASTIC, TO-220, 2 PIN

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0 INFINEON

IDH10S60CXK

暂无描述

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0 INFINEON

IDH10SG60C

3rd Generation thinQ!TM SiC Schottky Diode

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40 INFINEON

IDH10SG60CXKSA1

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon Carbide, TO-220, GREEN, PLASTIC PACKAGE-2

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0 INFINEON

IDH12E120

Rectifier Diode, 1 Phase, 1 Element, 28A, 1200V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC, TO-220, 2 PIN

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0 INFINEON

IDH12G65C5

650V SiC thinQ!™ Generation 5 diodes

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55 INFINEON