IDH10G65C6 [INFINEON]

CoolSiC™ 肖特基二极管 650V G6是英飞凌先进的 SiC 肖特基势垒二极管技术，充分发挥在硅上使用 SiC 的全部优势。英飞凌专有创新焊接工艺结合更加紧凑的设计、薄晶圆技术以及全新肖特基金属系统。打造的系列产品具有同类产品中极其优秀的的品质因数 (Qc x VF)，在各种负载条件下都表现出更高的效率。;


型号：	IDH10G65C6
厂家：	Infineon
描述：	CoolSiC™ 肖特基二极管 650V G6是英飞凌先进的 SiC 肖特基势垒二极管技术，充分发挥在硅上使用 SiC 的全部优势。英飞凌专有创新焊接工艺结合更加紧凑的设计、薄晶圆技术以及全新肖特基金属系统。打造的系列产品具有同类产品中极其优秀的的品质因数 (Qc x VF)，在各种负载条件下都表现出更高的效率。肖特基二极管
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IDH10G65C6

6^thGeneration CoolSiC™

650V SiC Schottky Diode

The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Schottky barrier

diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further

advancements like a novel Schottky metal system. The result is a family of products with improved efficiency

over all load conditions, resulting from a lower figure of merit (Q_cx V_F). The CoolSiC™ Schottky diode 650 V G6

has been designed to complement our 600 V and 650 V CoolMOS™ 7 families, meeting the most stringent

application requirements in this voltage range.

PG-TO220-2

Table 1

Key performance parameters

Parameter

V_RRM

Value

650

Unit

CASE

Q_C(V_R= 400 V)

E_C(V_R= 400 V)

14.7

2.7

µJ

1) Cathode

2) Anode

I_F(T_C≤ 140 °C, D = 1)

V_F(I_F= 10 A, T_j= 25 °C)

1.25

Table 2

Package information

Type / ordering Code

IDH10G65C6

Package

Marking

D1065C6

PG-TO220-2

Features



Best in class forward voltage (1.25 V)

Best in class figure of merit (Q_cx V_F)

High dv/dt ruggedness (150 V/ns)

Benefits



System efficiency improvement

System cost and size savings due to the reduced cooling requirements

Enabling higher frequency and increased power density

Potential Applications



Power factor correction in SMPS

Solar inverter

Uninterruptible power supply

Product Validation



Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22)

Final Datasheet

Please read the Important Notice and Warnings at the end of this document

Rev. 2.0, 2017-05-23

6^thGeneration CoolSiC^TM

IDH10G65C6

Table of Content

Maximum ratings ...............................................................................................................................3

Thermal characteristics .....................................................................................................................3

3.1

3.2

Electrical characteristics ....................................................................................................................4

Static characteristics...............................................................................................................................4

AC characteristics....................................................................................................................................4

Diagrams............................................................................................................................................5

Simplified forward characteristic.......................................................................................................7

Package outlines................................................................................................................................8

Final Datasheet

Rev. 2.0, 2017-05-23

6^thGeneration CoolSiC^TM

IDH10G65C6

Maximum ratings

Table 3

Maximum ratings

Values

Typ.

Parameter

Symbol

Unit Note/Test condition

Min.

Max.

–

T_C≤ 140 °C, D = 1

T_C≤ 125 °C, D = 1

T_C≤ 25 °C, D = 1

Continuous forward current

I_F

Surge-repetitive forward current,

sine halfwave¹

I_F,RM

–

T_C= 25 °C, t_p= 10 ms

–

T_C= 25 °C, t_p= 10 ms

T_C= 150 °C, t_p= 10 ms

Surge non-repetitive forward

current, sine halfwave

I_F,SM

Non-repetitive peak forward

current

I_F,max

∫ i²dt

–

600

T_C= 25 °C, t_p= 10 µs

–

T_C= 25 °C, t_p= 10 ms

A²s

i²t value

T_C= 150 °C, t_p= 10 ms

Repetitive peak reverse voltage

Diode dv/dt ruggedness

Power dissipation

V_RRM

650

150

T_C= 25 °C

dv/dt

V/ns V_R= 0..480 V

P_tot

T_j

T_stg

T_C= 25°C, R_thJC,max

Operating and storage

temperature

-55

–

175

°C

–

Mounting torque

–

Ncm M3 screw

Thermal characteristics

Table 4

Thermal characteristics (PG-TO-220-2)

Values

Parameter

Symbol

Min.

Unit Note/Test condition

Typ.

Max.

2.1

Thermal resistance, junction-

case

R_thJC

R_thJA

–

1.3

–

K/W

Thermal resistance, junction-

ambient

–

leaded

Soldering temperature,

wavesoldering only allowed at

leads

1.6 mm (0.063 in.) from

case for 10 s

T_sold

–

260

°C

¹The surge-repetitive forward current test was performed with 1000 pulses (half-wave rectified sine with the 10 ms period).

Final Datasheet Rev. 2.0, 2017-05-23

6^thGeneration CoolSiC^TM

IDH10G65C6

Electrical characteristics

3.1

Static characteristics

Symbol

Table 5

Parameter

Values

Typ.

Unit Note/Test condition

Min.

650

–

Max.

–

DC blocking voltage

V_DC

V_F

–

T_j= 25 °C

1.25

1.5

1.0

1.35

–

I_F= 10 A, T_j= 25 °C

Diode forward voltage

–

I_F= 10 A, T_j= 150 °C

V_R= 420 V, T_j= 25 °C

V_R= 420 V, T_j= 125 °C

V_R= 420 V, T_j= 150 °C

–

Reverse current

I_R

–

µA

–

3.2

AC characteristics

Table 6

Parameter

AC characteristics

Values

Symbol

Q_c

Unit Note/Test Condition

Min.

Typ.

Max.

V_R= 400 V, T_j= 150 °C,

Total capacitive charge

Total capacitance

–

14.7

–

di/dt = 200 A/µs, I_F≤ I_F,MAX

V_R= 1 V, f = 1 MHz,

T_j= 25 °C

–

495

–

V_R= 300 V, f = 1 MHz,

T_j= 25 °C

V_R= 600 V, f = 1 MHz,

T_j= 25 °C

Final Datasheet

Rev. 2.0, 2017-05-23

6^thGeneration CoolSiC^TM

IDH10G65C6

Diagrams

P_tot= f(T_C)

I_F= f(T_C); R_thJC,max; T_j≤ 175 °C; parameter: D = t_P/T

Figure 1

Power dissipation

Figure 2

Max. forward current

I_F= f(V_F); t_p= 10 µs; parameter: T_j

Figure 3

Typ. forward characteristics

Figure 4

Typ. forward characteristics

in surge current

Final Datasheet

Rev. 2.0, 2017-05-23

6^thGeneration CoolSiC^TM

IDH10G65C6

Q_C= f(di_F/dt); T_j= 150 °C; V_R= 400 V; I_F≤ I_F,max

I_R= f(V_R); parameter: T_j

Figure 5

Typ. cap. charge vs. current slope

Figure 6

Typ. reverse current vs. reverse voltage

Z_th,jc= f(t_P); parameter: D = t_P/T

Max. transient thermal

impedance

C = f(V_R); T_j= 25 °C; f = 1 MHz

Figure 7

Figure 8

Typ. capacitance vs. reverse voltage

Final Datasheet

Rev. 2.0, 2017-05-23

6^thGeneration CoolSiC^TM

IDH10G65C6

E_C= f(V_R)

Figure 9

Typ. capacitance stored energy

Simplified forward characteristic

V_FV_TH R_DIFF I_F

Treshold voltage (V_TH):

 

V_THT_j 0.001T_j 0.766

V

Differential resistance (R_DIFF):

 

 

R_DIFFT_j AT_j BT_j C 

A 1.2410^-6

DIFF

B  8.9910^-5

C  4.7510^-2

V_F= f(I_F)

T_j[°C]; -55 °C ≤ T_j≤ 175 °C; I_F≤ 10 A

Figure 11 Mathematical Equation

Figure 10 Equivalent forward current curve

Final Datasheet

Rev. 2.0, 2017-05-23

6^thGeneration CoolSiC^TM

IDH10G65C6

Package outlines

Figure 12 Outlines of the package PG-TO220-2, dimensions in mm/inches

Final Datasheet

Rev. 2.0, 2017-05-23

6^thGeneration CoolSiC^TM

IDH10G65C6

Revision History

Major changes since the last revision

Revision

2.0

Date

Subject (major changes since last revision)

Release of final version

2017-05-23

Final Datasheet

Rev. 2.0, 2017-05-23

Other Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

Edition 2017-05-23

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

Published by

characteristics (“Beschaffenheitsgarantie”).

contact your nearest Infineon Technologies office

(www.infineon.com).

Infineon Technologies AG

81726 München, Germany

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

Do you have a question about this

document?

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is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in

a written document signed by

authorized

representatives

Infineon

Email: erratum@infineon.com

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

Document reference

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

IDH10G65C6 [INFINEON]

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