IDH12SG60CXKSA2 [INFINEON]

Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon Carbide, TO-220AC, GREEN, PLASTIC, TO-220, 2 PIN;


型号：	IDH12SG60CXKSA2
厂家：	Infineon
描述：	Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon Carbide, TO-220AC, GREEN, PLASTIC, TO-220, 2 PIN 局域网二极管
文件：	总7页 (文件大小：570K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IDH12SG60C

3^rdGeneration thinQ!^TMSiC Schottky Diode

Features

Product Summary

• Revolutionary semiconductor material - Silicon Carbide

• Switching behavior benchmark

V_DC

600

Q_C

• No reverse recovery / No forward recovery

• Temperature independent switching behavior

• High surge current capability

I_F; T_C< 130 °C

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target applications

• Breakdown voltage tested at 20mA²⁾

• Optimized for high temperature operation

• Lowest Figure of Merit Q_C/I_F

thinQ! 3G Diode designed for fast switching applications like:

• SMPS e.g.; CCM PFC

• Motor Drives; Solar Applications; UPS

Type

Package

Marking

Pin 1

Pin 2

IDH12SG60C

PG-TO220-2

D12G60C

Maximum ratings

Parameter

Value

Symbol Conditions

Unit

I _F

T _C<130 °C

Continuous forward current

I _F,SM

T _C=25 °C, t _p=10 ms

T _C=150 °C, t _p=10 ms

T _C=25 °C, t _p=10 µs

T _C=25 °C, t _p=10 ms

T _C=150 °C, t _p=10 ms

T _j=25 °C

Surge non-repetitive forward current,

sine halfwave

I _F,max

Non-repetitive peak forward current

430

∫i²dt

A²s

i²t value

V_RRM

dv/ dt

P_tot

Repetitive peak reverse voltage

Diode dv/dt ruggedness

600

V_R= 0….480 V

V/ns

T _C=25 °C

Power dissipation

125

-55 ... 175

260

T _j, T _stg

Operating and storage temperature

°C

Soldering temperature,

wavesoldering only allowed at leads

1.6mm (0.063 in.)

from case for 10s

T _sold

Mounting torque

M3 and M3.5 screws

Ncm

Rev. 2.3

page 1

2013-02-11

IDH12SG60C

Values

typ.

Parameter

Symbol Conditions

Unit

min.

max.

Thermal characteristics

R _thJC

Thermal resistance, junction - case

1.2

K/W

Thermal resistance,

junction- ambient,

leaded

Thermal resistance,

junction - ambient

R _thJA

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V_DC

V_F

I _R=0.05 mA, T _j=25 °C

I _F=12 A, T _j=25 °C

DC blocking voltage

Diode forward voltage

600

2.1

1.8

2.2

I _F=12 A, T _j=150 °C

V_R=600 V, T _j=25 °C

V_R=600 V, T _j=150 °C

I _R

Reverse current

100 µA

1000

AC characteristics

V_R=400 V,I _F≤I _F,max

di_F/dt =200 A/µs,

T _j=150 °C

Q _c

t _c

Total capacitive charge

Switching time³⁾

<10 ns

V_R=1 V, f =1 MHz

Total capacitance

310

V_R=300 V, f =1 MHz

V_R=600 V, f =1 MHz

¹⁾J-STD20 and JESD22

²⁾All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.

³⁾t_cis the time constant for the capacitive displacement current waveform (independent from T_j, I_LOADand

di/dt), different from t_rrwhich is dependent on T_j, I_LOADand di/dt. No reverse recovery time constant t_rrdue

to absence of minority carrier injection.

⁴⁾Under worst case Z_thconditions.

⁵⁾Only capacitive charge occuring, guaranteed by design.

Rev. 2.3

page 2

2013-02-11

IDH12SG60C

1 Power dissipation

2 Diode forward current

I _F=f(T _C)⁴⁾; T _j≤175 °C; parameter: D = t _p/T

P_tot=f(T _C); parameter: R_thJC(max)

130

120

110

100

140

120

0.1

100

0.3

0.5

0.7

100

125

150

175

100

125

150

175

0.1

T_C[°C]

001..357

3 Typ. forward characteristic

4 Typ. forward characteristic in surge current

mode

I _F=f(V_F); t _p=400 µs; parameter:T _j

I _F=f(V_F); t _p=400 µs; parameter: T _j

-55 °C

25 °C

100 °C

-55 °C

150 °C

25 °C

175 °C

100 °C

150 °C

175 °C

V_F[V]

Rev. 2.3

page 3

2013-02-11

IDH12SG60C

5 Typ. capacitance charge vs. current slope

6 Typ. reverse current vs. reverse voltage

Q _C=f(di_F/dt )⁵⁾; I _F≤I _F,max

I _R=f(V_R); parameter: T _j

10¹

10⁰

10^-1

175 °C

10^-2

150 °C

100 °C

25 °C

-55°C

10^-3

100

200

300

400

500

600

100

400

700

1000

di_F/dt [A/µs]

V_R[V]

7 Typ. transient thermal impedance

8 Typ. capacitance vs. reverse voltage

Z _thJC=f(t _p); parameter: D = t _P/T

C =f(V_R); T _C=25 °C, f =1 MHz

10¹

400

350

300

250

200

150

100

10⁰

0.5

0.2

0.1

10^-1

0.05

0.02

0.01

10^-2

10^-3

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10^-1

10⁰

10¹

10²

10³

t_P[s]

V_R[V]

Rev. 2.3

page 4

2013-02-11

IDH12SG60C

9 Typ. C stored energy

E_C=f(V_R)

200

400

600

V_R[V]

Rev. 2.3

page 5

2013-02-11

IDH12SG60C

PG-TO220-2: Outline

Dimensions in mm/inches

Rev. 2.3

page 6

2013-02-11

IDH12SG60C

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems

and/or automotive, aviation and aerospace applications or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support , automotive, aviation and

aerospace device or system or to affect the safety or effectiveness of that device or system.

Life support systems are intended to be implanted in the human body and/or maintain

and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

Rev. 2.3

page 7

2013-02-11

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