IDK08G120C5 [INFINEON]
The CoolSiC™ Schottky diodes generation 5 1200 V, 8 A is now available in a D2PAK real 2-pin package. Connecting SiC diodes in parallel and in a small device package, a high efficient system can be achieved while minimizing board space requirement. The elimination of the middle pin reduces a risk of partial discharge at high voltage and high frequency operation.;
| 型号： | IDK08G120C5 |
| 厂家： | 
Infineon |
| 描述： | The CoolSiC™ Schottky diodes generation 5 1200 V, 8 A is now available in a D2PAK real 2-pin package. Connecting SiC diodes in parallel and in a small device package, a high efficient system can be achieved while minimizing board space requirement. The elimination of the middle pin reduces a risk of partial discharge at high voltage and high frequency operation. |
| 文件： | 总12页 (文件大小：1032K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDK08G120C5
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Features
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / no forward recovery
Temperature independent switching behaviour
Low forward voltage even at high operating temperature
Tight forward voltage distribution
1
2
Excellent thermal performance
Extended surge current capability
Pin definition
Specified dv/dt ruggedness
1
Pin 1 and backside: Cathode
Pin 2: Anode
Pb-free lead plating; RoHS compliant
CASE
2
Potential applications
Drives
Industrial power supplies: Industrial UPS
Solar central inverters and Solar string inverter
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Description
System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size/cost savings due to reduced heatsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability
Related Links: www.infineon.com/SiC
Key performance parameters
Type
VDC
IF
QC
Tvj,max
Marking
Package
IDK08G120C5
1200 V
8 A
28nC
175°C
D8512C5
PG-TO263-2
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 1 of 12
V 2.1
2021-07-14
www.infineon.com
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Table of contents
Table of contents
Features ........................................................................................................................................ 1
Potential applications..................................................................................................................... 1
Product validation.......................................................................................................................... 1
Description .................................................................................................................................... 1
Key performance parameters........................................................................................................... 1
Table of contents............................................................................................................................ 2
1
2
3
4
5
Maximum ratings ................................................................................................................... 3
Thermal resistances ............................................................................................................... 5
Electrical Characteristics ........................................................................................................ 6
Electrical Characteristics Diagrams .......................................................................................... 7
Package Drawing ..................................................................................................................10
Revision history.............................................................................................................................11
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 2 of 12
V 2.1
www.infineon.com
2021-07-14
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Maximum ratings
1
Maximum ratings
Note:
For optimum lifetime and reliability, Infineon recommends operating conditions that do not
exceed 80% of the maximum ratings stated in this datasheet.
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
1200
V
TC ≥ 25°C
Continuous forward current for Rth(j-c,max)
TC = 161°C, D=1
8.0
IF
A
A
TC = 135°C, D=1
11.0
22.8
TC = 25°C, D=1
Surge repetitive forward current, sine halfwave1
TC=25°C, tp=10ms
IF,RM
32
24
TC=100°C, tp=10ms
Surge non-repetitive forward current, sine halfwave
TC=25°C, tp=10ms
IF,SM
70
60
A
A
TC=150°C, tp=10ms
Non-repetitive peak forward current
IF,max
530
TC = 25°C, tp=10 µs
i²t value
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
∫ i²dt
25
18
A²s
Diode dv/dt ruggedness
VR=0...960 V
dv/dt
150
126
V/ns
W
Power dissipation for Rth(j-c,max)
Ptot
TC = 25°C
1 Not subject to production test. The test was performed with 20000 pulses (two consecutive half-wave rectified sines with 10 ms period).
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 3 of 12
V 2.1
www.infineon.com
2021-07-14
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Maximum ratings
Operating temperature
Storage temperature
Tvj
-55…175
-55…150
°C
°C
Tstg
Soldering temperature, reflow soldering (MSL1
according to JEDEC J-STD-020)
Tsold
260
°C
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 4 of 12
V 2.1
www.infineon.com
2021-07-14
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Thermal resistances
2
Thermal resistances
Value
min.
Parameter
Symbol Conditions
Unit
typ.
max.
Characteristic
Diode thermal resistance,
Rth(j-c)
-
-
0.92
-
1.19
62
K/W
K/W
junction – case
Thermal resistance,
Rth(j-a)
Leaded
junction – ambient
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 5 of 12
V 2.1
2021-07-14
www.infineon.com
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Electrical Characteristics
3
Electrical Characteristics
Static Characteristics, at Tvj=25°C, unless otherwise specified
Value
typ.
-
Parameter
Symbol Conditions
Unit
min.
max.
DC blocking voltage
Diode forward voltage
Tvj = 25°C, IR=50µA
VDC
VF
1200
-
1.95
-
40
-
V
V
IF= 8A, Tvj=25°C
-
-
1.65
2.25
3
IF= 8A, Tvj=150°C
VR=1200V, Tvj=25°C
VR=1200V, Tvj=150°C
Reverse current
IR
µA
14
Dynamic Characteristics, at Tvj=25°C, unless otherwise specified
Value
typ.
Parameter
Symbol Conditions
VR = 800V, Tvj=150°C
Unit
min.
max.
Total capacitive charge
VR
QC
-
28
-
nC
Q C(V)dV
C
0
VR=1 V, f=1 MHz
VR=400 V, f=1 MHz
VR=800 V, f=1 MHz
-
-
-
365
26
20
-
-
-
Total Capacitance
C
pF
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 6 of 12
V 2.1
2021-07-14
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5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Electrical Characteristics Diagrams
4
Electrical Characteristics Diagrams
Figure 1. Power dissipation as function of
case temperature, Ptot=f(TC), Rth(j-c)
Figure 2. Diode forward current as function
of temperature, parameter: Tvj≤175°C,
Rth(j-c),max, D=duty cycle, Vth, Rdiff @ Tvj=175°C
,
max
Figure 3. Typical forward characteristics,
Figure 4. Typical forward characteristics in
IF=f(VF), tp= 10 µs, parameter: Tvj
surge current, IF=f(VF), tp= 10 µs, parameter: Tvj
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 7 of 12
V 2.1
2021-07-14
www.infineon.com
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Electrical Characteristics Diagrams
Figure 5. Typical capacitive charge as
function of current slope, QC=f(dIF/dt),
Tvj=150°C
Figure 6. Typical reverse characteristics,
IR=f(VR), parameter: Tvj
Figure 7. Max. transient thermal impedance,
Zth,j-c=f(tP), parameter: D=tP/T
Figure 8. Typical capacitance as function of
reverse voltage, C=f(VR); Tvj=25°C; f=1 MHz
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 8 of 12
V 2.1
2021-07-14
www.infineon.com
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Electrical Characteristics Diagrams
Figure 9. Typical capacitively stored
energy as function of reverse voltage,
EC=f(VR)
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 9 of 12
V 2.1
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2021-07-14
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Package Drawing
5
Package Drawing
PG-TO263-2
1) Typical
Metal surface min. X = 7.25, y = 6.9
All metal surfaces: tin plated, except area of cut
All dimensions do not include mold flash or protrusions
All dimensions are in units mm
The drawings is in complicance with ISO 128-30, Projection Method 1 [
]
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 10 of 12
V 2.1
www.infineon.com
2021-07-14
5th Generation CoolSiCTM 1200V Schottky Diode
SiC-Diode
Revision history
Revision history
Document
version
Date of release
Description of changes
V 2.0
V 2.1
2019-10-28
2021-07-14
Final Datasheet
Increased dv/dt ruggedness
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 11 of 12
V 2.1
www.infineon.com
2021-07-14
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
Edition 2021-07-14
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
Published by
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
Infineon Technologies AG
81726 München, Germany
With respect to any examples, hints or any typical
values stated herein and/or any information Please note that this product is not qualified
regarding the application of the product, Infineon according to the AEC Q100 or AEC Q101 documents
Technologies hereby disclaims any and all of the Automotive Electronics Council.
warranties and liabilities of any kind, including
© 2021 Infineon Technologies AG.
All Rights Reserved.
without limitation warranties of non-infringement of
intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Do you have a question about this
document?
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and standards
concerning customer’s products and any use of the
product of Infineon Technologies in customer’s
applications.
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Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
Document reference
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authorized
representatives
of
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Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of the
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