IDP15E60_09 [INFINEON]

Fast EmCon Diode; 快EMCON二极管


型号：	IDP15E60_09
厂家：	Infineon
描述：	Fast EmCon Diode 快EMCON二极管二极管
文件：	总8页 (文件大小：632K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IDP15E60

Fast EmCon Diode

Product Summary

Features

600

RRM

• 600 V diode technology

• Fast recovery

1.5

175

• Soft switching

°C

jmax

• Low reverse recovery charge

• Low forward voltage

PG-TO220-2

• Easy paralleling

• Pb-free lead plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

• Qualified according to JEDEC for target applications

Type

Package

Ordering Code Marking Pin 1 PIN 2 PIN 3

IDP15E60

PG-TO220-2

D15E60

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Repetitive peak reverse voltage

Continous forward current

Symbol

Value

600

Unit

RRM

T =25°C

29.2

19.6

T =90°C

Surge non repetitive forward current

FSM

FRM

T =25°C, t =10 ms, sine halfwave

Maximum repetitive forward current

T =25°C, t limited by T

, D=0.5

jmax

Power dissipation

tot

T =25°C

83.3

47.2

T =90°C

-55...+175

°C

Operating and storage temperature

Soldering temperature

wavesoldering, 1.6mm (0.063 in.) from case for 10s

T , T

j stg

260

Page 1

Rev.2.4

2009-09-28

IDP15E60

Thermal Characteristics

Parameter

Symbol

Values

typ. max.

Unit

min.

Characteristics

1.8

K/W

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

thJC

thJA

@ 6 cm cooling area ¹⁾

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

typ. max.

Unit

μA

min.

Static Characteristics

Reverse leakage current

V =600V, T =25°C

1250

V =600V, T =150°C

Forward voltage drop

I =15A, T =25°C

1.5

I =15A, T =150°C

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 μm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 2

Rev.2.4

2009-09-28

IDP15E60

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

typ. max.

Unit

min.

Dynamic Characteristics

Reverse recovery time

V =400V, I =15A, di /dt=1000A/μs, T =25°C

124

131

V =400V, I =15A, di /dt=1000A/μs, T =125°C

V =400V, I =15A, di /dt=1000A/μs, T =150°C

Peak reverse current

rrm

V =400V, I = 15A, di /dt=1000A/μs, T =25°C

13.7

16.4

19.3

V =400V, I =15A, di /dt=1000A/μs, T =125°C

V =400V, I =15A, di /dt=1000A/μs, T =150°C

Reverse recovery charge

V =400V, I =15A, di /dt=1000A/μs, T =25°C

595

995

1104

V =400V, I =15A, di /dt=1000A/μs, T =125°C

V =400V, I =15A, di /dt=1000A/μs, T =150°C

Reverse recovery softness factor

V =400V, I =15A, di /dt=1000A/μs, T =25°C

3.6

4.3

4.5

V =400V, I =15A, di /dt=1000A/μs, T =125°C

V =400V, I =15A, di /dt=1000A/μs, T =150°C

Page 3

Rev.2.4

2009-09-28

IDP15E60

1 Power dissipation

= f (T )

2 Diode forward current

I = f(T )

tot

parameter: T ≤ 175 °C

parameter: T ≤ 175°C

100

125

175

100

125

175

°C

3 Typ. diode forward current

I = f (V )

4 Typ. diode forward voltage

V = f (T )

30A

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

-55°C

25°C

15A

100°C

150°C

7.5A

0.5

1.5

2.5

-60

-20

100

160

°C

Page 4

Rev.2.4

2009-09-28

IDP15E60

5 Typ. reverse recovery time

t = f (di /dt)

6 Typ. reverse recovery charge

Q =f(di /dt)

parameter: V = 400V, T = 125°C

parameter: V = 400V, T = 125 °C

R j

500

1450

30A

15A

400

350

300

250

200

150

100

1250

1150

1050

950

30A

15A

7.5A

850

7.5A

750

650

550

200 300 400 500 600 700 800

1000

200 300 400 500 600 700 800

1000

A/μs

di /dt

A/μs

di /dt

7 Typ. reverse recovery current

8 Typ. reverse recovery softness factor

S = f(di /dt)

I = f (di /dt)

parameter: V = 400V, T = 125°C

R j

30A

15A

7.5A

30A

15A

7,5A

200 300 400 500 600 700 800

1000

200 300 400 500 600 700 800

1000

A/μs

di /dt

A/μs

di /dt

Page 5

Rev.2.4

2009-09-28

IDP15E60

9 Max. transient thermal impedance

= f (t )

thJC

parameter : D = t /T

10 ¹

IDP15E60

K/W

10 ⁰

10 ^-1

D = 0.50

0.20

0.10

0.05

10 ^-2

0.02

0.01

single pulse

10 ^-3

10 ^-710 ^-610 ^-510 ^-410 ^-310 ^-2

10 ⁰

Page 6

Rev.2.4

2009-09-28

IDP15E60

Package Outline: TO220-2-1

Page 7

Rev.2.4

2009-09-28

IDP15E60

Published by

Infineon Technologies AG

81726 Munich, Germany

81726 München, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.

With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding

the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon

Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in

life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such

components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety

or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human

body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the

health of the user or other persons may be endangered.

Page 8

Rev.2.4

2009-09-28

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