IDP30C65D2 [INFINEON]
Rapid 2 650 V 开关, 30 A发射极控制 硅功率二极管 具有TO-220 封装和共阴极配置，可对设计进行优化，尺寸更为紧凑，组装更加简易，从而降低了成本。;
| 型号： | IDP30C65D2 |
| 厂家： | 
Infineon |
| 描述： | Rapid 2 650 V 开关, 30 A发射极控制 硅功率二极管 具有TO-220 封装和共阴极配置，可对设计进行优化，尺寸更为紧凑，组装更加简易，从而降低了成本。 开关 二极管 |
| 文件： | 总10页 (文件大小：1703K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Diode
RapidꢀSwitchingꢀEmitterꢀControlledꢀDiode
IDP30C65D2
EmitterꢀControlledꢀDiodeꢀRapidꢀ2ꢀCommonꢀCathodeꢀSeries
Dataꢀsheet
IndustrialꢀPowerꢀControl
IDP30C65D2
EmitterꢀControlledꢀDiodeꢀRapidꢀ2ꢀCommonꢀCathodeꢀSeries
RapidꢀSwitchingꢀEmitterꢀControlledꢀDiode
ꢀ
Features:
A2
A1
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀ650ꢀVꢀEmitterꢀControlledꢀtechnology
•ꢀFastꢀrecovery
•ꢀSoftꢀswitching
•ꢀLowꢀreverseꢀrecoveryꢀcharge
•ꢀLowꢀforwardꢀvoltageꢀandꢀstableꢀoverꢀtemperature
•ꢀ175ꢀ°Cꢀjunctionꢀoperatingꢀtemperature
•ꢀEasyꢀparalleling
C
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
Applications:
•ꢀBoostꢀdiodeꢀinꢀCCMꢀPFC
Packageꢀpinꢀdefinition:
•ꢀPinꢀ1ꢀ-ꢀanodeꢀ(A1)
•ꢀPinꢀ2ꢀandꢀbacksideꢀ-ꢀcathodeꢀ(C)
•ꢀPinꢀ3ꢀ-ꢀanodeꢀ(A2)
Key Performance and Package Parameters
Type
Vrrm
If
Vf, Tvj=25°C
Tvjmax
Marking
Package
IDP30C65D2
650V 2x 15A
1.6V
175°C
C30ED2
PG-TO220-3
2
Rev.ꢀ2.1,ꢀꢀ2014-09-18
IDP30C65D2
EmitterꢀControlledꢀDiodeꢀRapidꢀ2ꢀCommonꢀCathodeꢀSeries
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings (electrical parameters per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistances (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3
Rev.ꢀ2.1,ꢀꢀ2014-09-18
IDP30C65D2
EmitterꢀControlledꢀDiodeꢀRapidꢀ2ꢀCommonꢀCathodeꢀSeries
Maximum Ratings (electrical parameters per diode)
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.
Parameter
Symbol
Value
Unit
Repetitiveꢀpeakꢀreverseꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VRRM
650
V
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IF
30.0
15.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
IFSM
45.0
A
A
Diode surge non repetitive forward current
TCꢀ=ꢀ25°C,ꢀtpꢀ=ꢀ8.3ms,ꢀsineꢀhalfwave
100.0
92.0
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
Operating junction temperature
Storage temperature
Ptot
Tvj
W
°C
°C
-40...+175
-55...+150
Tstg
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
Thermal Resistances (per diode)
Parameter
Symbol Conditions
Max. Value
Unit
Characteristic
Diode thermal resistance,1)
junction - case
Rth(j-c)
Rth(j-a)
1.63
62
K/W
K/W
Thermal resistance
junction - ambient
Electrical Characteristics (per diode), at Tvj = 25°C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
Static Characteristic
IFꢀ=ꢀ15.0A
Diode forward voltage
VF
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
-
-
1.60 2.20
V
1.65
-
VRꢀ=ꢀ650V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Reverse leakage current2)
IR
-
-
4.0
400.0
40.0 µA
-
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
Dynamic Characteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
-
7.0
-
nH
1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
2) Reverse leakage current per diode specified for operating conditions with zero voltage applied to the other diode.
4
Rev.ꢀ2.1,ꢀꢀ2014-09-18
IDP30C65D2
EmitterꢀControlledꢀDiodeꢀRapidꢀ2ꢀCommonꢀCathodeꢀSeries
Switching Characteristics (per diode), Inductive Load
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
Diode Characteristic, at Tvj = 25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
31
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ15.0A,
diF/dtꢀ=ꢀ1000A/µs,
Lσꢀ=ꢀ30nH,
Qrr
0.20
10.1
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-850
-
A/µs
Cσꢀ=ꢀ40pF,
switch IKW50N65H5
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
42
0.16
5.4
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ15.0A,
diF/dtꢀ=ꢀ400A/µs,
Lσꢀ=ꢀ30nH,
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-250
-
A/µs
Cσꢀ=ꢀ40pF,
switch IKW50N65H5
Switching Characteristics (per diode), Inductive Load
Parameter Symbol Conditions
Diode Characteristic, at Tvj = 175°C/125°C
Value
Unit
min. typ. max.
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
32
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ15.0A,
diF/dtꢀ=ꢀ1000A/µs,
Lσꢀ=ꢀ30nH,
Qrr
0.29
11.5
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-800
-
A/µs
Cσꢀ=ꢀ40pF,
switch IKW50N65H5
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
42
0.22
6.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ125°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ15.0A,
diF/dtꢀ=ꢀ400A/µs,
Lσꢀ=ꢀ30nH,
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-400
-
A/µs
Cσꢀ=ꢀ40pF,
switch IKW50N65H5
5
Rev.ꢀ2.1,ꢀꢀ2014-09-18
IDP30C65D2
EmitterꢀControlledꢀDiodeꢀRapidꢀ2ꢀCommonꢀCathodeꢀSeries
100
90
80
70
60
50
40
30
20
10
0
1
D=0.5
0.2
0.1
0.05
0.02
0.1
0.01
single pulse
i:
1
2
3
4
5
6
ri[K/W]: 0.033644 0.33657 0.63479 0.58708 0.041314
2.0E-3
τi[s]:
1.8E-5
1.8E-4
9.7E-4
5.7E-3
0.07842986 2.0366
0.01
1E-6
25
50
75
100
125
150
175
1E-5
1E-4
0.001
0.01
0.1
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 1. Power dissipation per diode as a function of
Figure 2. Diode transient thermal impedance per diode
as a function of pulse width
(D=tp/T)
case temperature
(Tvj≤175°C)
70
0.40
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
60
50
40
30
20
10
0
0
500
1000
1500
2000
2500
3000
0
500
1000
1500
2000
2500
3000
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 3. Typical reverse recovery time as a function of Figure 4. Typical reverse recovery charge per diode as
diode current slope
(VR=400V)
a function of diode current slope
(VR=400V)
6
Rev.ꢀ2.1,ꢀꢀ2014-09-18
IDP30C65D2
EmitterꢀControlledꢀDiodeꢀRapidꢀ2ꢀCommonꢀCathodeꢀSeries
25
20
15
10
5
0
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
-250
-500
-750
-1000
-1250
-1500
0
0
500
1000
1500
2000
2500
3000
0
500
1000
1500
2000
2500
3000
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 5. Typical peak reverse recovery current per
diode as a function of diode current slope
(VR=400V)
Figure 6. Typical diode peak rate of fall of rev. rec.
current per diode as a function of diode
current slope
(VR=400V)
30
2.50
Tj=25°C
Tj=175°C
IF=7,5A
IF=15A
IF=30A
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
25
20
15
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 7. Typical diode forward current per diode as a Figure 8. Typical diode forward voltage as a function of
function of forward voltage junction temperature
7
Rev.ꢀ2.1,ꢀꢀ2014-09-18
IDP30C65D2
EmitterꢀControlledꢀDiodeꢀRapidꢀ2ꢀCommonꢀCathodeꢀSeries
PG-TO220-3
8
Rev.ꢀ2.1,ꢀꢀ2014-09-18
IDP30C65D2
EmitterꢀControlledꢀDiodeꢀRapidꢀ2ꢀCommonꢀCathodeꢀSeries
vGE(t)
90% VGE
a
b
a
b
10% VGE
t
iC(t)
90% IC
10% IC
90% IC
10% IC
t
vCE(t)
t
t
td(off)
tf
td(on)
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
t2
t4
E
=
VCE x IC x dt
E
=
on
VCE x IC x dt
off
∫
∫
2% VCE
t1
t3
t
t1
t2
t3
t4
9
Rev.ꢀ2.1,ꢀꢀ2014-09-18
IDP30C65D2
Emitter Controlled Diode Rapid 2 Common Cathode Series
Revision History
IDP30C65D2
Revision: 2014-09-18, Rev. 2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2014-09-18 Final data sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all ?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: erratum@infineon.com
Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
10
Rev. 2.1, 2014-09-18
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明