IDT04S60C_08 [INFINEON]
2nd Generation thinQ SiC Schottky Diode; 第二代的thinQ SiC肖特基二极管
| 型号： | IDT04S60C_08 |
| 厂家： | 
Infineon |
| 描述： | 2nd Generation thinQ SiC Schottky Diode |
| 文件： | 总7页 (文件大小：468K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features
Product Summary
V DC
Q c
I F
600
8
V
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
nC
A
4
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
PG-TO220-2-2
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
Package
Marking
Pin 1
Pin 2
IDT04S60C
PG-TO220-2-2
D04S60C
C
A
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I F
T C<140 °C
f =50 Hz
Continuous forward current
RMS forward current
4
A
I F,RMS
5.6
Surge non-repetitive forward current,
sine halfwave
I F,SM
T C=25 °C, t p=10 ms
32
18
T j=150 °C,
I F,RM
Repetitive peak forward current
T C=100 °C, D =0.1
I F,max
T C=25 °C, t p=10 µs
T C=25 °C, t p=10 ms
Non-repetitive peak forward current
i ²t value
132
5.1
600
50
∫i 2dt
A2s
V
V RRM
Repetitive peak reverse voltage
Diode dv/dt ruggedness
V R = 0….480V
T C=25 °C
dv/ dt
P tot
V/ns
Power dissipation
42
W
T j, T stg
Operating and storage temperature
Mounting torque
-55 ... 175
60
°C
M3 and M3.5 screws
page 1
Mcm
Rev. 2.1
2008-06-06
IDT04S60C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
3.6
62
K/W
Thermal resistance,
junction - ambient
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
1.6mm (0.063 in.) from
case for 10s
T sold
-
-
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V DC
V F
I R=0.05 mA
DC blocking voltage
Diode forward voltage
600
-
-
V
I F=4 A, T j=25 °C
I F=4 A, T j=150 °C
V R=600 V, T j=25 °C
-
-
-
1.7
2
1.9
2.4
50
I R
Reverse current
0.5
µA
V R=600 V, T j=150 °C
-
2
500
AC characteristics
V R=400 V,I F≤I F,max
di F/dt =200 A/µs,
T j=150 °C
,
Q c
t c
Total capacitive charge
Switching time3)
-
-
-
-
-
8
-
-
nC
<10 ns
V R=1 V, f = MHz
C
130
20
20
-
-
-
pF
V R=300 V, f =1 MHz
V R=600 V, f =1 MHz
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
3) tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and
di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection.
4) Only capacitive charge occuring, guaranteed by design.
Rev. 2.1
page 2
2008-06-06
IDT04S60C
1 Power dissipation
tot=f(T C)
2 Diode forward current
I F=f(T C); T j≤175 °C
P
parameter: RthJC(max)
parameter: R thJC(max); V F(max)
45
10
9
8
7
6
5
4
3
2
1
0
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
200
25
50
75
100
125
150
175
200
T C [°C]
T C [°C]
3 Typ. forward characteristic
I F=f(V F); t p=400 µs
parameter: T j
4 Typ. forward characteristic in surge current
mode
I F=f(V F); t p=400 µs; parameter: Tj
8
40
175ºC
-55ºC
150ºC
150ºC
25ºC
100ºC
7
6
5
4
3
2
1
0
30
-55ºC
20
175ºC
25ºC
10
100ºC
0
0
1
2
3
4
0
2
4
6
8
10
V F[V]
V F[V]
Rev. 2.1
page 3
2008-06-06
IDT04S60C
6 Typ. reverse current vs. reverse voltage
5 Typ. forward power dissipation vs.
average forward current
I R=f(V R)
P
F,AV=f(I F), T C=100 °C, parameter: D =t p/T
parameter: T j
101
20
0.1
0.5
1
0.2
18
16
14
12
10
8
100
175 °C
150 °C
10-1
10-2
10-3
100 °C
25 °C
6
-55 °C
4
2
10-4
100
0
200
300
400
500
600
0
2
4
6
8
I F(AV) [A]
V R [V]
7 Transient thermal impedance
thJC=f(t p)
8 Typ. capacitance vs. reverse voltage
Z
C =f(V R); T C=25 °C, f =1 MHz
parameter: D =t p/T
101
200
175
150
125
100
75
0.5
100
0.2
0.1
0.05
10-1
0.02
50
single pulse
25
10-2
0
10-5
10-4
10-3
10-2
10-1
10-1
100
101
102
103
V R [V]
t P [s]
Rev. 2.1
page 4
2008-06-06
IDT04S60C
10 Typ. capacitance charge vs. current slope
9 Typ. C stored energy
Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max
E C=f(V R)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
8
6
4
2
0
0
100
200
300
400
500
600
100
400
700
1000
V R [V]
di F/dt [A/µs]
Rev. 2.1
page 5
2008-06-06
IDT04S60C
Package Outline:PG-TO220-2-2
Rev. 2.1
page 6
2008-06-06
IDT04S60C
Rev. 2.1
page 7
2008-06-06
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