IDV06S60C [INFINEON]

2nd Generation thinQ! SiC Schottky Diode; 第二代的thinQ ！ SiC肖特基二极管


型号：	IDV06S60C
厂家：	Infineon
描述：	2nd Generation thinQ! SiC Schottky Diode 第二代的thinQ ！ SiC肖特基二极管整流二极管肖特基二极管局域网
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SiC

Silicon Carbide Diode

2nd Generation thinQ!™

2nd Generation thinQ!™ SiC Schottky Diode

IDV06S60C

Data Sheet

Rev. 2.0, 2010-01-14

Final

Industrial & Multimarket

2nd Generation thinQ!™ SiC Schottky Diode

IDV06S60C

Description

The second generation of Infineon SiC Schottky diodes has emerged over the

years as the industry standard. The IDVxxS60C family is extending the already

broad portfolio with the TO220FullPAK package. In order to greatly reduce the

impact of the internal isolation of the FullPAK on the thermal performance, Infineon

is applying it´s new diffusion soldering process for attaching the chip to the

leadframe. The result of this is nearly identical thermal characteristics to that of the

SiC diodes in the non-isolated TO220 package.

Features

•

Revolutionary semiconductor material - Silicon Carbide

Nearly no reverse / forward recovery charge

High surge current capability

Fully isolated package with nearly similar Rth,jc as the standard T0220

Suitable for high temperature operation

Pb-free lead plating; RoHS compliant

Qualified according to JEDEC¹⁾for target applications

Switching behavior independent of forward current, switching speed and

temperature

Benefits

•

System efficiency improvement over Si diodes

System cost / size savings due to reduced cooling requirements

Good thermal performance without the need for additional isolation layer and washer

Enabling higher frequency / increased power density solutions

Higher system reliability due to lower operating temperatures and less fans

Reduced EMI

Applications

Fully isolated TO220 package for e.g. CCM PFC; Motor Drives; Solar Applications; UPS

Table 1

Key Performance Parameters

Parameter

V_DC

Value

600

Unit

Q_C

I_F@ T_C< 145°C

Table 2

Pin 1

Pin Definition

Pin2

Pin 3

n.a.

Type / Ordering Code

Package

Marking

Related Links

IDV06S60C

PG-TO220 FullPAK

D06S60C

IFX SiC Diodes Webpage

1) J-STD20 and JESD22

Final Data Sheet

Rev. 2.0, 2010-01-14

2nd Generation thinQ!™ SiC Schottky Diode

IDV06S60C

Table of Contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Final Data Sheet

Rev. 2.0, 2010-01-14

2nd Generation thinQ!™ SiC Schottky Diode

IDV06S60C

Maximum ratings

Table 3

Maximum ratings

Parameter

Symbol

Values

Unit Note / Test Condition

Min. Typ. Max.

Continuous forward current

Surge non-repetitive

I_F

T_C= < 145°C

I_{F, SM}

400

T_C= 25°C, t_p= 10 ms

T_C= 150°C, t_p= 10 ms

T_C= 25°C, t_p= 10 µs

T_C= 25°C, t_p= 10 ms

T_C= 150°C, t_p= 10 ms

T_j= 25°C

forward current, sine halfwave

Non-repetitive peak forward current I_{F, max}

i² t value

∫i²dt

A²s

Repetitive peak reverse voltage

Diode dv/dt ruggedness

Power dissipation

V_RRM

dv/dt

P_tot

600

175

V/ns V_R= 0...480 V

T_C= 25 °C

Operating and storage temperature T_j; T_stg

- 55

°C

Mounting torque

Ncm M2.5 screws

Thermal characteristics

Table 4

Thermal characteristics TO-220 FullPAK

Parameter

Symbol

Min.

Values

Unit

Note /

Test Condition

Typ.

Max.

4.5

Thermal resistance, junction - case R_thJC

K/W

Thermal resistance, junction -

ambient

R_thJA

leaded

Soldering temperature,

wavesoldering only allowed at

leads

T_sold

260

°C

1.6 mm (0.063 in.)

from case for 10 s

Final Data Sheet

Rev. 2.0, 2010-01-14

2nd Generation thinQ!™ SiC Schottky Diode

IDV06S60C

Electrical characteristics

Table 5

Static characteristics

Parameter

Symbol

Min.

Values

Unit

Note / Test Condition

Typ.

Max.

DC blocking voltage

Diode forward voltage

V_DC

V_F

600

T_j= 25 °C, I_R= 0.08 mA

I_F= 6 A, T_j= 25 °C

1.5

1.7

0.7

1.7

2.1

I_F= 6 A, T_j= 150 °C

I_R= 600 V, T_j=25 °C

I_R= 600 V, T_j=150 °C

Reverse current

I_R

µA

800

Table 6

AC characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Total capacitive charge

Switching time¹⁾

Q_c

t_c

V_R= 400 V, F ≤I F_max

di_F/dt =200 A/μs,

T_j=150 °C

<10

280

V_R= 1 V, f= 1 MHz

V_R= 300 V, f= 1 MHz

V_R= 600 V, f= 1 MHz

1)tC is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and di/dt), different from

t^rrwhich is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to absence of minority carrier injection.

Final Data Sheet

Rev. 2.0, 2010-01-14

2nd Generation thinQ!™ SiC Schottky Diode

IDV06S60C

Electrical characteristics diagrams

Table 7

Power dissipation

Diode forward current

P_tot= f(T_C)

I_F=f(T_C); T _j≤ 175 °C

Table 8

Typ. forward characteristic

Typ. forward characteristic in surge current

I_F=f(V_F); t_p=400 µs; parameter: T_j

Final Data Sheet

Rev. 2.0, 2010-01-14

2nd Generation thinQ!™ SiC Schottky Diode

IDV06S60C

Electrical characteristics diagrams

Table 9

Typ. capacitance charge vs. current slope¹⁾

Typ. reverse current vs. reverse voltage

Q_D=f(diF/dt)4); Tj= 150 °C; I_F≤ I_{F max}

I_R=f(V_R)

1) Only capacitive charge occuring, guaranteed by design

Table 10

Typ. transient thermal impedance

Typ. capacitance vs. reverse voltage

Z_thjc=f(tp) ; parameter: D = t_P/ T

C=f(V_R); T_C=25 °C, f=1 MHz

Final Data Sheet

Rev. 2.0, 2010-01-14

2nd Generation thinQ!™ SiC Schottky Diode

IDV06S60C

Electrical characteristics diagrams

Table 11

Typ. C stored energy

E_C=f(V_R)

Final Data Sheet

Rev. 2.0, 2010-01-14

2nd Generation thinQ!™ SiC Schottky Diode

IDV06S60C

Package outlines

Figure 1

Outlines TO-220 FullPAK, dimensions in mm/inches

Final Data Sheet

Rev. 2.0, 2010-01-14

2nd Generation thinQ!™ SiC Schottky Diode

IDV06S60C

Revision History

2nd Generation thinQ!™ 2nd Generation thinQ!™ SiC Schottky Diode

Revision History: 2010-01-14, Rev. 2.0

Previous Revision:

Revision Subjects (major changes since last revision)

2.0

Release of final data sheet

We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to: erratum@infineon.com

Edition 2010-01-14

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties

and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure

of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may

be endangered.

Final Data Sheet

Rev. 2.0, 2010-01-14

IDV06S60C [INFINEON]

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