IDW75D65D1 [INFINEON]
Rapid 1 650 V 开关, 75 A发射极控制 硅功率二极管 具有TO-247封装和共阴极配置，可对设计进行优化，尺寸更为紧凑，组装更加简易，从而降低了成本。;
| 型号： | IDW75D65D1 |
| 厂家： | 
Infineon |
| 描述： | Rapid 1 650 V 开关, 75 A发射极控制 硅功率二极管 具有TO-247封装和共阴极配置，可对设计进行优化，尺寸更为紧凑，组装更加简易，从而降低了成本。 开关 二极管 |
| 文件： | 总12页 (文件大小：1637K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Diode
RapidꢀSwitchingꢀEmitterꢀControlledꢀDiode
IDW75D65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀDualꢀAnodeꢀSeries
Dataꢀsheet
IndustrialꢀPowerꢀControl
IDW75D65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀDualꢀAnodeꢀSeries
RapidꢀSwitchingꢀEmitterꢀControlledꢀDiode
ꢀ
Features:
A
A
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀ650VꢀEmitterꢀControlledꢀtechnology
•ꢀTemperatureꢀstableꢀbehaviourꢀofꢀkeyꢀparameters
•ꢀLowꢀforwardꢀvoltageꢀ(VF)
•ꢀUltraꢀfastꢀrecovery
•ꢀLowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)
•ꢀLowꢀreverseꢀrecoveryꢀcurrentꢀ(Irrm
)
•ꢀ175°Cꢀjunctionꢀoperatingꢀtemperature
•ꢀPb-freeꢀleadꢀplating
C
•ꢀRoHSꢀcompliant
Applications:
•ꢀAC/DCꢀconverters
•ꢀBoostꢀdiodeꢀinꢀPFCꢀstages
•ꢀFreeꢀwheelingꢀdiodesꢀinꢀinvertersꢀandꢀmotorꢀdrives
•ꢀGeneralꢀpurposeꢀinverters
•ꢀSwitchꢀmodeꢀpowerꢀsupplies
1
2
3
Packageꢀpinꢀdefinition:
•ꢀPinꢀ1ꢀ-ꢀanode
•ꢀPinꢀ2ꢀandꢀbacksideꢀ-ꢀcathode
•ꢀPinꢀ3ꢀ-ꢀanode
Key Performance and Package Parameters
Type
Vrrm
If
Vf, Tvj=25°C
Tvjmax
Marking
Package
IDW75D65D1
650V
75A
1.35V
175°C
D75ED1
PG-TO247-3
2
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IDW75D65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀDualꢀAnodeꢀSeries
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IDW75D65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀDualꢀAnodeꢀSeries
Maximum Ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.
Parameter
Symbol
Value
Unit
Repetitiveꢀpeakꢀreverseꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VRRM
650
V
1)
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IF
150.0
75.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
Diode surge non repetitive forward current2)
IFpuls
IFSM
225.0
A
A
TCꢀ=ꢀ25°C,ꢀtpꢀ=ꢀ10.0ms,ꢀsineꢀhalfwave
580.0
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
PowerꢀdissipationꢀTCꢀ=ꢀ100°C
326.0
163.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
Thermal Resistances
Parameter
Symbol Conditions
Max. Value
Unit
Characteristic
Diode thermal resistance,3)
junction - case
Rth(j-c)
Rth(j-a)
0.46
40
K/W
K/W
Thermal resistance
junction - ambient
Electrical Characteristics, at Tvj = 25°C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
Static Characteristic
IFꢀ=ꢀ75.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ175°C
-
-
-
1.35 1.70
Diode forward voltage
VF
V
1.32
1.28
-
-
VRꢀ=ꢀ650V
Reverse leakage current
IR
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
-
-
-
40.0 µA
-
3000.0
1) Maximum current for pin 1 and pin 3 is 80A (value limited by bondwire).
2) For a balanced current flow through pins 1 and 3.
3)ꢀPleaseꢀbeꢀawareꢀthatꢀinꢀnonstandardꢀloadꢀconditions,ꢀdueꢀtoꢀhighꢀRth(j-c),ꢀTvjꢀcloseꢀtoꢀTvjmaxꢀcanꢀbeꢀreached.
4
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IDW75D65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀDualꢀAnodeꢀSeries
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
Dynamic Characteristic
Internal emitter inductance1)
measured 5mm (0.197 in.) from
case
LE
-
7.0
-
nH
Switching Characteristics, Inductive Load
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
Diode Characteristic, at Tvj = 25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
108
1.25
19.9
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ75.0A,
diF/dtꢀ=ꢀ1000A/µs,
Lσꢀ=ꢀ30nH,
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1100
-
A/µs
Cσꢀ=ꢀ40pF,
switch IGZ100N65H5.
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
127
0.48
6.4
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ40.0A,
diF/dtꢀ=ꢀ200A/µs,
Lσꢀ=ꢀ30nH,
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-32
-
A/µs
Cσꢀ=ꢀ40pF,
switch IGZ100N65H5.
Switching Characteristics, Inductive Load
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
Diode Characteristic, at Tvj = 175°C/125°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
174
4.16
37.9
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ75.0A,
diF/dtꢀ=ꢀ1000A/µs,
Lσꢀ=ꢀ30nH,
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1170
-
A/µs
Cσꢀ=ꢀ40pF,
switch IGZ100N65H5.
1) For a balanced current flow through pins 1 and 3.
5
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IDW75D65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀDualꢀAnodeꢀSeries
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
184
1.64
13.2
-
-
-
ns
µC
A
Tvjꢀ=ꢀ125°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ40.0A,
diF/dtꢀ=ꢀ200A/µs,
Lσꢀ=ꢀ30nH,
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-62
-
A/µs
Cσꢀ=ꢀ40pF,
switch IGZ100N65H5.
6
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IDW75D65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀDualꢀAnodeꢀSeries
350
315
280
245
210
175
140
105
70
160
140
120
100
80
60
40
20
35
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Power dissipation as a function of case
Figure 2. Collector current as a function of case
temperature
temperature
(Tvj≤175°C)
(VGE≥15V,ꢀTvj≤175°C)
250
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ75A
Tvjꢀ=ꢀ125°C,ꢀIFꢀ=ꢀ75A
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ75A
225
200
175
150
125
100
75
D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
single pulse
50
25
i:
ri[K/W]: 3.1E-4 0.01435 0.09435 0.09881 0.22828 0.01967 2.0E-3
τi[s]: 1.0E-5 3.0E-5 2.2E-4 2.2E-3 0.01247 0.10291 1.85641
1
2
3
4
5
6
7
0.01
1E-6
0
200
1E-5
1E-4
0.001
0.01
0.1
1
600 1000 1400 1800 2200 2600 3000
tp,ꢀPULSEꢀWIDTHꢀ[s]
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 3. Diode transient thermal impedance as a
function of pulse width
Figure 4. Typical reverse recovery time as a function of
diode current slope
(VR=400V)
(D=tp/T)
7
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IDW75D65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀDualꢀAnodeꢀSeries
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
70
60
50
40
30
20
10
0
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ75A
Tvjꢀ=ꢀ125°C,ꢀIFꢀ=ꢀ75A
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ75A
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ75A
Tvjꢀ=ꢀ125°C,ꢀIFꢀ=ꢀ75A
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ75A
200
600 1000 1400 1800 2200 2600 3000
200
600 1000 1400 1800 2200 2600 3000
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 5. Typical reverse recovery charge as a function Figure 6. Typical reverse recovery current as a
of diode current slope
(VR=400V)
function of diode current slope
(VR=400V)
0
-250
150
135
120
105
90
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ75A
Tvjꢀ=ꢀ125°C,ꢀIFꢀ=ꢀ75A
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ75A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
-500
-750
-1000
-1250
-1500
-1750
-2000
-2250
-2500
75
60
45
30
15
0
200
600 1000 1400 1800 2200 2600 3000
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 7. Typical diode peak rate of fall of reverse
recovery current as a function of diode
current slope
Figure 8. Typical diode forward current as a function of
forward voltage
(VR=400V)
8
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IDW75D65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀDualꢀAnodeꢀSeries
1.75
1.50
1.25
1.00
0.75
0.50
IFꢀ=ꢀ20A
IFꢀ=ꢀ37.5A
IFꢀ=ꢀ75A
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typical diode forward voltage as a function of
junction temperature
9
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IDW75D65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀDualꢀAnodeꢀSeries
PG-TO247-3
10
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IDW75D65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀDualꢀAnodeꢀSeries
VGE(t)
I,V
90% VGE
trr = ta + tb
Qrr = Qa + Qb
dIF/dt
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
10% IC
90% IC
10% IC
Figure C. Definition of diode switching
t
characteristics
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
s
parasitic capacitor C ,
s
relief capacitor C ,
r
t2
t4
(only for ZVT switching)
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
11
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IDW75D65D1
Emitter Controlled Diode Rapid 1 Dual Anode Series
Revision History
IDW75D65D1
Revision: 2014-12-10, Rev. 2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2014-12-02 Preliminaryt data sheet
2014-12-10 Final data sheet
1.1
2.1
We Listen to Your Comments
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Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: erratum@infineon.com
Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
12
Rev. 2.1, 2014-12-10
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INFINEON
IDWD40G120C5
是1200 V、40 A第五代CoolSiC™肖特基二极管，它采用TO-247 真2脚封装，可轻松更换现下通用的Si二极管。全新封装具备经过扩展的8.7 mm爬电距离和电气间隙，在高度污染的环境下可带来更高的安全性。结合Si IGBT或SJ MOSFET，如在三相转换系统使用的Vienna整流级或PFC升压电路中，与Si二极管相比，CoolSiC™ 二极管的效率提高了1%。这使得PFC和直流-直流电路的输出功率显著提高了40%及以上。除了可以忽略不计的开关损耗（碳化硅肖特基的一大特色），第五代CoolSiC™产品还具有同类产品中的最佳正向电压（VF）、随温度变化最小的VF以及最高的浪涌电流能力。该系列产品能够以具有吸引力的成本实现市场领先的效率和更高的系统可靠性。
INFINEON
IDY10S120XKSA1
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 1200V V(RRM), Silicon Carbide, TO-247, GREEN, PLASTIC, TO-247HC, 3 PIN
INFINEON
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