IDWD30G120C5 [INFINEON]
是1200 V、30 A第五代CoolSiC™肖特基二极管，它采用TO-247 真2脚封装，可轻松更换现下通用的Si二极管。全新封装具备经过扩展的8.7 mm爬电距离和电气间隙，在高度污染的环境下可带来更高的安全性。结合Si IGBT或SJ MOSFET，如在三相转换系统使用的Vienna整流级或PFC升压电路中，与Si二极管相比，CoolSiC™ 二极管的效率提高了1%。这使得PFC和直流-直流电路的输出功率显著提高了40%及以上。除了可以忽略不计的开关损耗（碳化硅肖特基的一大特色），第五代CoolSiC™产品还具有同类产品中的最佳正向电压（VF）、随温度变化最小的VF以及最高的浪涌电流能力。该系列产品能够以具有吸引力的成本实现市场领先的效率和更高的系统可靠性。;
| 型号： | IDWD30G120C5 |
| 厂家： | 
Infineon |
| 描述： | 是1200 V、30 A第五代CoolSiC™肖特基二极管，它采用TO-247 真2脚封装，可轻松更换现下通用的Si二极管。全新封装具备经过扩展的8.7 mm爬电距离和电气间隙，在高度污染的环境下可带来更高的安全性。结合Si IGBT或SJ MOSFET，如在三相转换系统使用的Vienna整流级或PFC升压电路中，与Si二极管相比，CoolSiC™ 二极管的效率提高了1%。这使得PFC和直流-直流电路的输出功率显著提高了40%及以上。除了可以忽略不计的开关损耗（碳化硅肖特基的一大特色），第五代CoolSiC™产品还具有同类产品中的最佳正向电压（VF）、随温度变化最小的VF以及最高的浪涌电流能力。该系列产品能够以具有吸引力的成本实现市场领先的效率和更高的系统可靠性。 开关 双极性晶体管 功率因数校正 肖特基二极管 |
| 文件： | 总12页 (文件大小：1069K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDWD30G120C5
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Features
No reverse recovery current / no forward recovery
High surge current capability
Temperature independent switching behaviour
Low forward voltage even at high operating temperature
Tight forward voltage distribution
1
2
Specified dv/dt ruggedness
Pb-free lead plating; RoHS compliant
Pin definition
Potential applications
1
Pin 1 and backside: Cathode
Pin 2: Anode
CASE
Industrial power supplies: Industrial UPS
Infrastructure-Charge: Charger
2
Metal treatment: Welding
Solar central inverters, Solar string inverter and Solar optimizer
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Description
System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size/cost savings due to reduced heatsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability
Related Links: www.infineon.com/SiC
Key performance parameters
Type
VDC
IF
QC
Tvj,max
Marking
Package
IDWD30G120C5
1200 V
30 A
154nC
175°C
D3012C5
PG-TO247-2
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 1 of 12
V 2.1
2021-03-01
www.infineon.com
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Table of contents
Table of contents
Features ........................................................................................................................................ 1
Potential applications..................................................................................................................... 1
Product validation.......................................................................................................................... 1
Description .................................................................................................................................... 1
Key performance parameters........................................................................................................... 1
Table of contents............................................................................................................................ 2
1
2
3
4
5
Maximum ratings ................................................................................................................... 3
Thermal resistances ............................................................................................................... 5
Electrical Characteristics ........................................................................................................ 6
Electrical Characteristics Diagrams .......................................................................................... 7
Package Drawing ..................................................................................................................10
Revision history.............................................................................................................................11
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 2 of 12
V 2.1
www.infineon.com
2021-03-01
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Maximum ratings
1
Maximum ratings
Note:
For optimum lifetime and reliability, Infineon recommends operating conditions that do not
exceed 80% of the maximum ratings stated in this datasheet.
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
V
VRRM
1200
TC ≥ 25°C
Continuous forward current for Rth(j-c,max)
TC = 156°C, D=1
30
40
87
IF
A
A
TC = 135°C, D=1
TC = 25°C, D=1
Surge repetitive forward current, sine halfwave1
TC=25°C, tp=10ms
IF,RM
120
90
TC=100°C, tp=10ms
Surge non-repetitive forward current, sine halfwave
TC=25°C, tp=10ms
IF,SM
240
230
A
TC=150°C, tp=10ms
Non-repetitive peak forward current
IF,max
2460
A
TC = 25°C, tp=10 µs
i²t value
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
∫ i²dt
288
264
A²s
Diode dv/dt ruggedness
VR=0...960 V
dv/dt
150
332
V/ns
W
Power dissipation for Rth(j-c,max)
Ptot
TC = 25°C
1 Not subject to production test. The test was performed with 20000 pulses (two consecutive half-wave rectified sines with 10 ms period).
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 3 of 12
V 2.1
www.infineon.com
2021-03-01
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Maximum ratings
Operating temperature
Storage temperature
Tvj
-55…175
-55…150
°C
°C
Tstg
Soldering temperature,
wave soldering only allowed at leads
1.6mm (0.063 in.) from case for 10 s
Tsold
260
0.6
°C
Mounting torque, M3 screw
M
Nm
Maximum of mounting processes: 3
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 4 of 12
V 2.1
www.infineon.com
2021-03-01
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Thermal resistances
2
Thermal resistances
Value
min.
Parameter
Symbol Conditions
Unit
typ.
max.
Characteristic
Diode thermal resistance,
Rth(j-c)
-
-
0.35
-
0.5
62
K/W
K/W
junction – case
Thermal resistance,
Rth(j-a)
leaded
junction – ambient
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 5 of 12
V 2.1
2021-03-01
www.infineon.com
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Electrical Characteristics
3
Electrical Characteristics
Static Characteristics, at Tvj=25°C, unless otherwise specified
Value
typ.
-
Parameter
Symbol Conditions
Unit
min.
max.
DC blocking voltage
Diode forward voltage
Tvj= 25°C, IR=500µA
VDC
VF
1200
-
1.65
-
248
-
V
V
IF= 30A, Tvj=25°C
-
-
-
-
1.4
1.7
17
IF= 30A, Tvj=150°C
VR=1200V, Tvj=25°C
VR=1200V, Tvj=150°C
Reverse current
IR
µA
88
Dynamic Characteristics, at Tvj=25°C, unless otherwise specified
Value
typ.
Parameter
Symbol Conditions
VR = 800V, Tvj=150°C & 25°C
Unit
min.
max.
Total capacitive charge
VR
QC
-
154
-
nC
Q C(V)dV
C
0
VR=1 V, f=1 MHz
VR=400 V, f=1 MHz
VR=800 V, f=1 MHz
-
-
-
1980
140
111
-
-
-
Total Capacitance
C
pF
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 6 of 12
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5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Electrical Characteristics Diagrams
4
Electrical Characteristics Diagrams
350
300
250
200
150
100
50
350
300
250
200
150
100
50
D= 0.10
D= 0.30
D= 0.50
D= 0.70
D= 1.00
0
0
25
50
75
100 125 150 175
25
50
75 100 125 150 175
Tc [°C]
Tc [°C]
Figure 1. Power dissipation as function of
case temperature, Ptot=f(TC), Rth(j-c),max
Figure 2. Diode forward current as function
of temperature, parameter: Tvj≤175°C, Rth(j-
c),max, D=duty cycle, Vth, Rdiff @ Tvj=175°C
60
300
-55 C
-55 C
50
250
25 C
25 C
40
200
100 C
100 C
150 C
30
20
10
0
150
175 C
100
150 C
50
175 C
0
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
6
VF [V]
VF [V]
Figure 3. Typical forward characteristics,
Figure 4. Typical forward characteristics in
IF=f(VF), tp= 10 µs, parameter: Tvj
surge current, IF=f(VF), tp= 10 µs, parameter: Tvj
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 7 of 12
V 2.1
2021-03-01
www.infineon.com
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Electrical Characteristics Diagrams
180
160
140
120
100
80
1E-4
1E-5
1E-6
1E-7
1E-8
1E-9
175 C
150 C
60
100 C
40
25 C
20
-55 C
0
100
400
700
1000
200
400
600
800 1000 1200
dIF/dt [A/µs]
VR [V]
Figure 5. Typical capacitive charge as
Figure 6. Typical reverse characteristics,
IR=f(VR), parameter: Tvj
function of current slope2, QC=f(dIF/dt),
Tvj=150°C
2) guaranteed by design
2500
2000
1500
1000
500
1
D= 0.50
D= 0.20
D= 0.10
0.1
D= 0.05
D= 0.02
D= 0.01
Single Pulse
0
0.01
0
1
10
100
1000
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E0
VR [V]
tp [s]
Figure 7. Max. transient thermal impedance,
Zth,j-c=f(tP), parameter: D=tP/T
Figure 8. Typical capacitance as function of
reverse voltage, C=f(VR); Tvj=25°C; f=1 MHz
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 8 of 12
V 2.1
2021-03-01
www.infineon.com
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Electrical Characteristics Diagrams
100
90
80
70
60
50
40
30
20
10
0
0
200 400 600 800 1000 1200
VR [V]
Figure 9. Typical capacitively stored energy
as function of reverse voltage, EC=f(VR)
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 9 of 12
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2021-03-01
5th Generation CoolSiCTM 1200V Schottky Diode
SiC Diode
Package Drawing
5
Package Drawing
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 10 of 12
V 2.1
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2021-03-01
5th Generation CoolSiCTM 1200V Schottky Diode
SiC-Diode
Revision history
Revision history
Document
version
Date of release
Description of changes
V 1.0
V 2.0
V 2.1
2018-12-21
2019-01-30
2021-03-01
Preliminary Datasheet
Final Datasheet
Increased dv/dt ruggedness
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 11 of 12
V 2.1
www.infineon.com
2021-03-01
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
Edition 2021-03-01
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
Published by
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
Infineon Technologies AG
81726 München, Germany
With respect to any examples, hints or any typical
values stated herein and/or any information Please note that this product is not qualified
regarding the application of the product, Infineon according to the AEC Q100 or AEC Q101 documents
Technologies hereby disclaims any and all of the Automotive Electronics Council.
warranties and liabilities of any kind, including
© 2021 Infineon Technologies AG.
All Rights Reserved.
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Do you have a question about this
document?
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Email: erratum@infineon.com
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Technologies in
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Technologies, Infineon Technologies’ products may
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