IFCM30U65GD [INFINEON]
CIPOS™ Mini 650 V, 30 A three-phase interleaved PFC intelligent power module;
| 型号： | IFCM30U65GD |
| 厂家： | 
Infineon |
| 描述： | CIPOS™ Mini 650 V, 30 A three-phase interleaved PFC intelligent power module 功率因数校正 |
| 文件： | 总17页 (文件大小：1187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Control Integrated POwer System
(CIPOS™)
IFCM30U65GD
Datasheet
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 1 of 17
V 2.2
www.infineon.com
2017-09-06
Control Integrated POwer System (CIPOS™)
IFCM30U65GD
Table of contents
Table of contents...................................................................................................................................................2
CIPOS™ Control Integrated POwer System............................................................................................................3
Features
..................................................................................................................................................................3
Target Applications......................................................................................................................................................3
Description ..................................................................................................................................................................3
System Configuration..................................................................................................................................................3
Pin Configuration...................................................................................................................................................4
Internal Electrical Schematic.................................................................................................................................4
Pin Assignment ......................................................................................................................................................5
Pin Description ......................................................................................................................................................5
LIN(X, Y, Z) (IGBT control pins, Pin 7, 8, 9) ...................................................................................................................5
VFO (Fault-output, Pin 12) ...........................................................................................................................................6
NTC (Thermistor, Pin 15) .............................................................................................................................................6
ITRIP (Over current detection function, Pin 13)..........................................................................................................6
VDD, VSS (Control supply and reference, Pin 11, 14)..................................................................................................6
NX, NY, NZ (IGBT emitter, Pin 17, 19, 21).....................................................................................................................6
X, Y, Z (IGBT collector, Pin 18, 20, 22) ..........................................................................................................................6
P (Positive output voltage, Pin 23) ..............................................................................................................................6
Absolute Maximum Ratings ...................................................................................................................................7
Module Section ............................................................................................................................................................7
Power Section ..............................................................................................................................................................7
Control Section ............................................................................................................................................................8
Recommended Operation Conditions ...................................................................................................................8
Static Parameters ..................................................................................................................................................9
Dynamic Parameters ...........................................................................................................................................10
Thermistor...........................................................................................................................................................11
Mechanical Characteristics and Ratings ..............................................................................................................11
Electrical characteristic .......................................................................................................................................14
Package Outline...................................................................................................................................................15
Revision history ...................................................................................................................................................16
Datasheet
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Control Integrated POwer System (CIPOS™)
IFCM30U65GD
CIPOS™
Control Integrated POwer System
Dual In-Line Intelligent Power Module
Three Phase Interleaved PFC 650V / 30A
Features
Description
Dual In-Line molded module
The CIPOS™ module family offers the chance for
integrating various power and control components
to increase reliability, optimize PCB size and system
costs.
TRENCHSTOP™ 5
Rapid switching emitter controlled diode
Rugged SOI gate driver technology with stability
against transient
Over current shutdown
Under-voltage lockout
All of 3 switches turn off during protection
Temperature monitor
Emitter pins accessible for all phase current
monitoring (open emitter)
Lead-free terminal plating; RoHS compliant
Very low thermal resistance due to DCB
It is designed to enhance the system efficiency by
improvement of power factor. The package concept
is specially adapted to power applications, which
need good thermal conduction and electrical
isolation, but also EMI-save control and overload
protection.
TRENCHSTOP™ 5 are combined with an optimized
SOI gate driver for excellent electrical performance.
System Configuration
3-Phase Interleaved PFC with TRENCHSTOP™ 5
and Rapid switching emitter controlled diode
Target Applications
3-Phase Interleaved PFC
SOI gate driver
Thermistor
Pin-to-heatsink clearance distance typ. 1.6mm
Datasheet
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Control Integrated POwer System (CIPOS™)
IFCM30U65GD
Pin Configuration
Bottom View
(24) NC
(23) P
(1) NC
(2) NC
(3) NC
(4) NC
(22) X
(5) NC
(6) NC
(21) NX
(7) LIN(X)
(8) LIN(Y)
(9) LIN(Z)
(10) NC
(20) Y
(19) NY
(18) Z
(11) VDD
(12) VFO
(13) ITRIP
(14) VSS
(15) NTC
(16) NC
(17) NZ
Figure 1
Pin configuration
Internal Electrical Schematic
(1) NC
(2) NC
(24) NC
(23) P
(3) NC
(4) NC
(5) NC
(6) NC
(22) X
LO1
(7) LIN(X)
(8) LIN(Y)
(9) LIN(Z)
(10) NC
LIN1
LIN2
LIN3
(21) NX
(20) Y
LO2
LO3
(11) VDD
VDD
VFO
(19) NY
(18) Z
(12) VFO
(13) ITRIP
ITRIP
VSS
(14) VSS
(15) NTC
(16) NC
(17) NZ
Figure 2
Internal schematic
Datasheet
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Control Integrated POwer System (CIPOS™)
IFCM30U65GD
Pin Assignment
Pin Number
Pin Name
Pin Description
NC
NC
NC
NC
NC
NC
No Connection
1
2
No Connection
No Connection
3
No Connection
4
No Connection
5
No Connection
6
LIN(X)
LIN(Y)
LIN(Z)
NC
X phase IGBT gate driver input
Y phase IGBT gate driver input
Z phase IGBT gate driver input
No Connection
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
VDD
VFO
ITRIP
VSS
NTC
NC
Control supply
Fault output
Over current shutdown input
Control negative supply
Thermistor
No Connection
NZ
Z phase IGBT emitter
Z phase IGBT collector
Y phase IGBT emitter
Y phase IGBT collector
X phase IGBT emitter
X phase IGBT collector
Positive output voltage
No Connection
Z
NY
Y
NX
X
P
NC
Pin Description
LIN(X, Y, Z) (IGBT control pins, Pin 7, 8, 9)
These pins are positive logic and they are
responsible for the control of the integrated IGBT.
The Schmitt-trigger input thresholds of them are
such to guarantee LSTTL and CMOS compatibility
down to 3.3V controller outputs. Pull-down resistor
of about 5k is internally provided to pre-bias
inputs during supply start-up and a zener clamp is
provided for pin protection purposes. Input
Schmitt-trigger and noise filter provide beneficial
noise rejection to short input pulses.
CIPOS
Schmitt-Trigger
INPUT NOISE
FILTER
LIN
UZ=10.5V
5k
SWITCH LEVEL
VIH; VIL
VSS
Figure 3
Input pin structure
a)
b)
tFILIN
tFILIN
LIN
LIN
The noise filter suppresses control pulses which are
below the filter time tFILIN. The filter acts according
to Figure 4.
high
low
LO
LO
Figure 4
Input filter timing diagram
Datasheet
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Control Integrated POwer System (CIPOS™)
IFCM30U65GD
It is recommended for proper work of this product
VDD, VSS (Control supply and reference, Pin 11, 14)
not to provide input pulse-width lower than 1μs.
VDD is the control supply and it provides power
both to input logic and to output power stage.
Input logic is referenced to VSS ground.
VFO (Fault-output, Pin 12)
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 12.1V is present.
The VFO pin indicates a module failure in case of
under voltage at pin VDD or in case of triggered
over current detection at ITRIP.
The IC shuts down all the gate drivers power
outputs, when the VDD supply voltage is below
VDDUV- = 10.4V. This prevents the external power
switches from critically low gate voltage levels
during on-state and therefore from excessive power
dissipation.
CIPOS
VDD
VFO
RON,FLT
From ITRIP - Latch
1
VSS
From UV detection
Figure 5
Internal circuit at pin VFO
NX, NY, NZ (IGBT emitter, Pin 17, 19, 21)
The IGBT emitters are available for current
measurements of each phase. It is recommended to
keep the connection to pin VSS as short as possible
in order to avoid unnecessary inductive voltage
drops.
NTC (Thermistor, Pin 15)
The NTC pin provides direct access to thermistor,
which is referenced to VSS. An external pull-up
resistor connected to +5V ensures that the resulting
voltage can be directly connected to the
microcontroller.
X, Y, Z (IGBT collector, Pin 18, 20, 22)
ITRIP (Over current detection function, Pin 13)
These pins are IGBT collector. It is mandatory to
connect anti-parallel diode between IGBT collector
and emitter.
CIPOS™ provides an over current detection
function by connecting the ITRIP input with the
IGBT collector current feedback. The ITRIP
comparator threshold (typ. 0.47V) is referenced to
VSS ground. An input noise filter (typ.: tITRIPMIN
530ns) prevents the driver to detect false over-
current events.
P (Positive output voltage, Pin 23)
The diode cathodes are connected to the output
voltage. It is noted that the voltage does not exceed
450 V.
=
Over current detection generates a shutdown of all
outputs of the gate driver after the shutdown
propagation delay of typically 1000ns.
Datasheet
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Control Integrated POwer System (CIPOS™)
IFCM30U65GD
Absolute Maximum Ratings
(VDD = 15V and Tj = 25°C, if not stated otherwise)
Module Section
Value
Description
Condition
Symbol
Unit
min
-40
max
125
-
Storage temperature range
Isolation test voltage
Tstg
VISOL
TC
°C
V
RMS, f=60Hz, t=1min
Refer to Figure 6
2000
-40
Operating case temperature range
125
°C
Power Section
Value
Description
Condition
Symbol
Unit
min
-
max
450
DC link output voltage of P-N
Applied between P-N
Applied between P-N
VPN
V
V
DC link output voltage (surge) of
P-N
VPN(surge)
-
500
Max. blocking voltage
IC = 250µA
IR = 250µA
VCES
VRRM
650
650
-
-
V
V
Repetitive peak reverse voltage
TJ ≤ 150°C ,
TC = 25°C
TC = 80°C
Input RMS current of each phase
Ii
-
-
30
20
A
Maximum peak input current of
each phase
TJ ≤ 150°C , TC = 25°C
less than 1ms, non-repetitive
Ii(peak)
Ptot
TJ
-
-
80
A
Power dissipation of each IGBT
60.4
150
W
°C
Operating junction temperature
range
-40
Single IGBT thermal resistance,
junction-case
RthJC
-
-
2.07
2.77
K/W
K/W
Single diode thermal resistance,
junction-case
RthJCD
Datasheet
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Control Integrated POwer System (CIPOS™)
IFCM30U65GD
Control Section
Value
Description
Condition
Symbol
VDD
Unit
min
-1
max
20
Module supply voltage
Input voltage
V
V
VIN
VITRIP
-1
-1
LIN, ITRIP
10
60
Switching frequency
fPWM
-
kHz
Recommended Operation Conditions
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.
Value
Description
DC link output voltage of P-N
Symbol
Unit
min
0
typ
-
max
450
16.5
1
VPN
VDD
V
V
Control supply voltage
Control supply variation
13.5
-1
15
-
ΔVDD
V/µs
VIN
VITRIP
0
0
5
5
Logic input voltages LIN,ITRIP
-
-
V
V
Between VSS - N (including surge)
VSS
-5
5
Figure 6
TC measurement point1
1Any measurement except for the specified point in figure 6 is not relevant for the temperature verification and
brings wrong or different information.
Datasheet
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Control Integrated POwer System (CIPOS™)
IFCM30U65GD
Static Parameters
(VDD = 15V and Tj = 25°C, if not stated otherwise)
Value
typ
Description
Condition
Symbol
VCE(sat)
Unit
V
min
max
IC = 20A
Collector-Emitter saturation voltage
-
-
1.75
1.95
2.3
-
TJ = 25°C
150°C
IF = 20A
Diode forward voltage
VF
-
-
1.45
1.4
2.0
-
V
TJ = 25°C
150°C
Collector-Emitter leakage current
Diode reverse leakage current
Logic "1" input voltage (LIN)
Logic "0" input voltage (LIN)
ITRIP positive going threshold
ITRIP input hysteresis
VCE = 650V
VR = 650V
ICES
IR
-
-
-
1
1
mA
mA
V
-
VIH
-
2.1
0.9
470
70
2.5
-
VIL
0.7
400
40
V
VIT,TH+
VIT,HYS
540
-
mV
mV
VDDsupply under voltage positive
going threshold
VDDUV+
VDDUV-
VDDUVH
10.8
9.5
12.1
10.4
1.7
13.0
11.2
-
V
V
V
VDDsupply under voltage negative
going threshold
VDDsupply under voltage lockout
hysteresis
1.0
Quiescent VDD supply current
Input bias current
LIN = 0V
IQDD
IIN+
-
-
-
-
-
-
370
1
900
1.5
-
µA
mA
µA
µA
nA
V
VIN = 5V
Input bias current
VIN = 0V
2
IIN-
ITRIP input bias current
VFO input bias current
VFO output voltage
VITRIP = 5V
IITRIP+
IFO
65
2
150
-
VFO = 5V, VITRIP = 0V
IFO = 10mA, VITRIP = 1V
VFO
0.5
-
Datasheet
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Control Integrated POwer System (CIPOS™)
IFCM30U65GD
Dynamic Parameters
(VDD = 15V and Tj = 25°C, if not stated otherwise)
Value
typ
Description
Condition
Symbol
Unit
min
max
Turn-on propagation delay time
Turn-on rise time
ton
tr
-
-
-
-
-
-
-
-
610
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
VLIN = 5V,
IC = 20A,
VDC = 400V
25
115
90
Turn-on switching time
Reverse recovery time
Turn-off propagation delay time
Turn-off fall time
tc(on)
trr
toff
700
15
VLIN = 0V,
IC = 20A,
VDC = 400V
tf
Turn-off switching time
Input filter time ITRIP
tc(off)
tITRIPmin
30
VITRIP = 1V
530
Input filter time at LIN for turn on
and off
VLIN = 0V & 5V
VITRIP = 1V
tFILIN
-
290
-
-
-
ns
µs
Fault clear time after ITRIP-fault
tFLTCLR
40
VDC = 400V, IC = 20A
TJ = 25°C
IGBT turn-on energy (includes reverse
recovery of diode)
Eon
Eoff
Erec
-
-
550
705
-
-
µJ
µJ
µJ
150°C
VDC = 400V, IC = 20A
TJ = 25°C
IGBT turn-off energy
-
-
95
125
-
-
150°C
VDC = 400V, IC = 20A
TJ = 25°C
Diode recovery energy
-
-
80
120
-
-
150°C
Datasheet
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Control Integrated POwer System (CIPOS™)
IFCM30U65GD
Thermistor
Value
typ
Description
Condition
TNTC = 25°C
Symbol
Unit
min
-
max
-
Resistor
RNTC
85
k
B-constant of NTC
(Negative Temperature Coefficient)
B(25/100)
-
4092
-
K
3500
35
Min.
Typ.
Max.
3000
2500
2000
1500
1000
500
30
25
20
15
10
5
0
50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130
Thermistor temperature [℃]
0
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Thermistor temperature [℃]
Figure 7
Thermistor resistance – temperature curve and table
(For more information, please refer to the application note ‘AN CIPOS™-Mini 1 Technical description’)
Mechanical Characteristics and Ratings
Value
Description
Condition
Unit
min
0.49
-50
-
typ
max
Mounting torque
M3 screw and washer
Refer to Figure 8
-
-
0.78
100
-
Nm
µm
g
Flatness
Weight
6.58
Figure 8
Flatness measurement position
Datasheet
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IFCM30U65GD
Circuit of a Typical Application
(1) NC
(2) NC
(24) NC
(23) P
(3) NC
(4) NC
(22) X
(5) NC
#7
#7
(6) NC
#4
#1
LO1
LO2
LO3
(7) LIN(X)
LIN1
(21) NX
(8) LIN(Y)
LIN2
Micro
Controller
(9) LIN(Z)
LIN3
(20) Y
(19) NY
(18) Z
(10) NC
5 or 3.3V line VDD line
#5
(11) VDD
VDD
(12) VFO
VFO
#6
(13) ITRIP
ITRIP
(14) VSS
VSS
#7
(15) NTC
~
<Signal for protection>
(16) NC
(17) NZ
AC
Temperature monitor
#3
#2
#8
X-phase current sensing
Y-phase current sensing
Z-phase current sensing
Input surge voltage sensing
<Signal for protection>
Figure 9
Typical application circuit
Because CIPOS™ Mini PFC has very high speed switching characteristics, considerable large surge voltage between P and N
terminals and switching noise on signaling path are generated easily. Please pay attention to the below items for optimized
application circuit design.
1. Input circuit
- To reduce input signal noise by high speed switching, the RIN and CIN filter circuit should be mounted. (100Ω, 1nF)
- CIN should be placed as close to VSS pin as possible.
2. Itrip circuit
- To prevent protection function errors, CITRIP should be placed as close to Itrip and VSS pins as possible.
3. VFO circuit
- VFO output is an open drain output. This signal line should be pulled up to the positive side of the 5V/3.3V logic power
supply with a proper resistor RPU. It is recommended that RC filter be placed as close to the controller as possible.
4. Snubber capacitor
- The wiring between CIPOS™ Mini PFC and snubber capacitor including shunt resistor should be as short as possible.
5. Shunt resistor
- The shunt resistor of SMD type should be used for reducing its stray inductance.
6. Ground pattern
- Ground pattern should be separated at only one point of shunt resistor as short as possible.
7. It is mandatory to connect anti-parallel diode (2A, voltage rating higher than 650V) to PFC IGBT.
8. Input surge voltage protection circuit
- This protection circuit is necessary for PFC IGBT to be protected from excessive surge voltage.
Datasheet
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Control Integrated POwer System (CIPOS™)
IFCM30U65GD
Switching Times Definition
LINx
2.1V
0.9V
trr
toff
ton
10%
10%
iCx
90%
90%
tf
tr
10%
10%
10%
vCEx
tc(on)
tc(off)
Figure 10 Switching times definition
Datasheet
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IFCM30U65GD
Electrical characteristic
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
VDD=15V
TJ=25℃
VDD=15V
VDD=20V
TJ=25℃
TJ=25℃
TJ=150℃
TJ=150℃
0
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
80
80
80
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VCE(sat), Collector - Emitter voltage [V]
V , Forward voltage [V]
F
VCE(sat), Collector - Emitter voltage [V]
Typ. Collector – Emitter saturation voltage
Typ. Collector – Emitter saturation voltage
Typ. Diode forward voltage
4.5
350
325
300
275
250
225
200
175
150
125
100
75
2.4
VDC=400V
VDD=15V
VDC=400V
VDD=15V
VDC=400V
VDD=15V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.2
2.0
1.8
1.6
1.4
1.2
Tj=25C
Tj=150C
TJ=25℃
TJ=150℃
TJ=25℃
1.0
TJ=150℃
0.8
0.6
0.4
0.2
0.0
50
25
0
0
10
20
30
Ic, Collector current [A]
40
50
60
70
80
80
80
0
10
20
30
40
Ic, Collector current [A]
50
60
70
0
10
20
Ic, Collector current [A]
30
40
50
60
70
80
Typ. Turn on switching energy loss
Typ. Turn off switching energy loss
Typ. Reverse recovery energy loss
850
400
1000
975
950
925
900
875
850
825
800
775
750
725
700
675
650
VDC=400V
VDD=15V
VDC=400V
VDD=15V
375
350
325
300
275
250
225
200
175
150
125
100
75
VDC=400V
VDD=15V
825
800
775
750
725
700
675
650
625
600
575
550
TJ=25℃
TJ=150℃
TJ=25℃
TJ=25℃
TJ=150℃
TJ=150℃
50
25
0
0
10
20
30
Ic, Collector current [A]
40
50
60
70
0
10
20
30
40
50
Ic, Collector current [A]
60
70
0
10
20
Ic, Collector current [A]
30
40
50
60
70
80
Typ. Turn on propagation delay time
Typ. Turn on switching time
Typ. Turn off propagation delay time
10
150
250
VDC=400V
225 VDD=15V
140
130
120
110
100
90
VDC=400V
VDD=15V
1
200
175
150
125
100
75
0.1
D : duty ratio
80
D=50%
D=20%
D=10%
D=5%
D=2%
Single pulse
70
0.01
1E-3
1E-4
60
50
40
TJ=25℃
TJ=25℃
30
50
TJ=150℃
TJ=150℃
20
25
10
0
0
1E-7 1E-6 1E-5 1E-4 1E-3 0.01 0.1
tP, Pulse width [sec.]
1
10
100
0
10
20
Ic, Collector current [A]
30
40
50
60
70
0
10
20
Ic, Collector current [A]
30
40
50
60
70
Typ. Turn off switching time
Typ. Reverse recovery time
IGBT transient thermal resistance at all
IGBTs operation
Datasheet
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Control Integrated POwer System (CIPOS™)
IFCM30U65GD
Package Outline
Datasheet
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Control Integrated POwer System (CIPOS™)
IFCM30U65GD
Revision history
Document
version
Date of release
Description of changes
V 2.1
V 2.2
Jun. 2017
Sep. 2017
Package outline update
Maximum operating case temperature, Tc= 125°C
Datasheet
16 of 17
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2017-09-06
Trademarks
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IMPORTANT NOTICE
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Edition 2017-09-06
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