首页 |元器件品牌

IGB50N65H5 [INFINEON]

IGBT TRENCHSTOP™ 5;
IGB50N65H5
型号： IGB50N65H5
厂家： Infineon    Infineon
描述：

IGBT TRENCHSTOP™ 5

双极性晶体管
文件： 总14页 (文件大小：1366K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
IGB50N65H5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
HighꢀspeedꢀIGBTꢀinꢀTRENCHSTOPTMꢀꢀ5ꢀtechnology  
ꢀ
C
E
FeaturesꢀandꢀBenefits:  
HighꢀspeedꢀH5ꢀtechnologyꢀoffering  
•ꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant  
topologies  
•ꢀ650Vꢀbreakdownꢀvoltage  
•ꢀLowꢀQG  
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:  
http://www.infineon.com/igbt/  
G
C
PotentialꢀApplications:  
•ꢀEnergyꢀGeneration  
ꢀꢀꢀ-ꢀSolarꢀStringꢀInverter  
ꢀꢀꢀ-ꢀSolarꢀMicroꢀInverter  
•ꢀIndustrialꢀPowerꢀSupplies  
ꢀꢀꢀ-ꢀIndustrialꢀSMPS  
ꢀꢀꢀ-ꢀIndustrialꢀUPS  
G
•ꢀMetalꢀTreatment  
ꢀꢀꢀ-ꢀWelding  
E
•ꢀEnergyꢀDistribution  
ꢀꢀꢀ-ꢀEnergyꢀStorage  
•ꢀInfrastructureꢀ–ꢀCharge  
ꢀꢀꢀ-ꢀCharger  
ProductꢀValidation:  
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests  
ofꢀJEDEC47/20/22  
KeyꢀPerformanceꢀandꢀPackageꢀParameters  
Type  
VCE  
IC  
VCEsat,ꢀTvj=25°C Tvjmax  
1.65V 175°C  
Marking  
G50EH5  
Package  
IGB50N65H5  
650V  
50A  
PG-TO263-3  
Datasheet  
www.infineon.com  
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument  
Vꢀ2.2  
2018-01-11  
IGB50N65H5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11  
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
Datasheet  
2
Vꢀ2.2  
2018-01-11  
IGB50N65H5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
MaximumꢀRatings  
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.  
Parameter  
Symbol  
Value  
Unit  
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C  
VCE  
650  
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
Tcꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire  
Tcꢀ=ꢀ100°C  
IC  
80.0  
53.7  
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
ICpuls  
150.0  
150.0  
A
A
Turn off safe operating area  
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs  
-
Gate-emitter voltage  
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)  
±20  
±30  
VGE  
Ptot  
V
PowerꢀdissipationꢀTcꢀ=ꢀ25°C  
PowerꢀdissipationꢀTcꢀ=ꢀ100°C  
270.0  
135.0  
W
Operating junction temperature  
Storage temperature  
Tvj  
-40...+175  
-55...+150  
°C  
°C  
Tstg  
Soldering temperature,  
reflow soldering (MSL1 according to JEDEC J-STA-020)  
°C  
260  
ThermalꢀResistance  
Value  
min. typ. max.  
Parameter  
Symbol Conditions  
Unit  
RthꢀCharacteristics  
IGBT thermal resistance,  
junction - case  
Rth(j-c)  
Rth(j-a)  
-
-
-
-
0.55 K/W  
65 K/W  
Thermal resistance, min. footprint  
junction - ambient  
Thermal resistance, 6cm² Cu on  
PCB  
Rth(j-a)  
-
-
40 K/W  
junction - ambient  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
StaticꢀCharacteristic  
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA  
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ50.0A  
Tvjꢀ=ꢀ25°C  
Collector-emitter saturation voltage VCEsat  
Tvjꢀ=ꢀ125°C  
650  
-
-
V
V
-
-
-
1.65 2.10  
1.85  
1.95  
-
-
Tvjꢀ=ꢀ175°C  
Gate-emitter threshold voltage  
VGE(th)  
ICꢀ=ꢀ0.50mA,ꢀVCEꢀ=ꢀVGE  
3.2  
4.0  
4.8  
V
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Zero gate voltage collector current ICES  
-
-
-
50  
-
µA  
2000  
Gate-emitter leakage current  
Transconductance  
IGES  
gfs  
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V  
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ50.0A  
-
-
-
100  
-
nA  
S
62.0  
Datasheet  
3
Vꢀ2.2  
2018-01-11  
IGB50N65H5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
DynamicꢀCharacteristic  
Input capacitance  
Cies  
-
-
-
3000  
50  
-
-
-
Output capacitance  
Coes  
Cres  
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz  
pF  
Reverse transfer capacitance  
11  
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ50.0A,  
VGEꢀ=ꢀ15V  
Gate charge  
QG  
LE  
-
-
120.0  
7.0  
-
-
nC  
nH  
Internal emitter inductance  
measured 5mm (0.197 in.) from  
case  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
23  
31  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ25°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ50.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
173  
40  
ns  
ns  
Turn-on energy  
Eon  
Eoff  
Ets  
1.59  
0.75  
2.34  
mJ  
mJ  
mJ  
Turn-off energy  
Total switching energy  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
21  
15  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ25°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ25.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
180  
18  
ns  
ns  
Turn-on energy  
Turn-off energy  
Total switching energy  
Eon  
Eoff  
Ets  
0.52  
0.18  
0.70  
mJ  
mJ  
mJ  
Datasheet  
4
Vꢀ2.2  
2018-01-11  
IGB50N65H5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
23  
29  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ150°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ50.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
190  
33  
ns  
ns  
Turn-on energy  
Eon  
Eoff  
Ets  
1.95  
0.73  
2.68  
mJ  
mJ  
mJ  
Turn-off energy  
Total switching energy  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
20  
15  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ150°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ25.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
205  
26  
ns  
ns  
Turn-on energy  
Turn-off energy  
Total switching energy  
Eon  
Eoff  
Ets  
0.75  
0.27  
1.02  
mJ  
mJ  
mJ  
Datasheet  
5
Vꢀ2.2  
2018-01-11  
IGB50N65H5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
270  
240  
210  
180  
150  
120  
90  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
60  
30  
0
25  
50  
75  
100  
125  
150  
175  
25  
50  
75  
100  
125  
150  
175  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase  
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase  
temperature  
temperature  
(Tvj≤175°C)  
(VGE≥15V,ꢀTvj≤175°C)  
150  
135  
150  
135  
120  
120  
VGE=20V  
VGE=20V  
18V  
18V  
105  
105  
15V  
15V  
90  
90  
12V  
12V  
10V  
8V  
7V  
6V  
5V  
10V  
8V  
7V  
6V  
5V  
75  
60  
45  
30  
15  
0
75  
60  
45  
30  
15  
0
0
1
2
3
4
5
0
1
2
3
4
5
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 3. Typicalꢀoutputꢀcharacteristic  
(Tvj=25°C)  
Figure 4. Typicalꢀoutputꢀcharacteristic  
(Tvj=150°C)  
Datasheet  
6
Vꢀ2.2  
2018-01-11  
IGB50N65H5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
150  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
Tj=25°C  
Tj=150°C  
IC=12,5A  
IC=25A  
IC=50A  
135  
120  
105  
90  
75  
60  
45  
30  
15  
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5  
25  
50  
75  
100  
125  
150  
175  
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 5. Typicalꢀtransferꢀcharacteristic  
(VCE=20V)  
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas  
aꢀfunctionꢀofꢀjunctionꢀtemperature  
(VGE=15V)  
1000  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
1000  
100  
10  
1
100  
10  
1
0
30  
60  
90  
120  
150  
0
5
10  
15  
20  
25  
30  
35  
40  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
rG,ꢀGATEꢀRESISTORꢀ[Ω]  
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
collectorꢀcurrent  
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate  
resistor  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=0/15V,ꢀrG=12Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=0/15V,ꢀIC=50A,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
Datasheet  
7
Vꢀ2.2  
2018-01-11  
IGB50N65H5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
1000  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
td(off)  
tf  
td(on)  
tr  
typ.  
100  
10  
1
25  
50  
75  
100  
125  
150  
175  
0
25  
50  
75  
100  
125  
150  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
junctionꢀtemperature  
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction  
ofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,  
IC=50A,ꢀrG=12Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
(IC=0.5mA)  
12  
5.0  
Eoff  
Eon  
Ets  
Eoff  
Eon  
Ets  
11  
10  
9
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
8
7
6
5
4
3
2
1
0
0
25  
50  
75  
100  
125  
150  
0
5
10  
15  
20  
25  
30  
35  
40  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
rG,ꢀGATEꢀRESISTORꢀ[Ω]  
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀcurrent  
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀgateꢀresistor  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=0/15V,ꢀrG=12Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=0/15V,ꢀIC=50A,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
Figure E)  
Datasheet  
8
Vꢀ2.2  
2018-01-11  
IGB50N65H5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
3.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Eoff  
Eon  
Ets  
Eoff  
Eon  
Ets  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
25  
50  
75  
100  
125  
150  
175  
200  
250  
300  
350  
400  
450  
500  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,  
IC=50A,ꢀrG=12Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀemitterꢀvoltage  
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=0/15V,  
IC=50A,ꢀrG=12Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
16  
130V  
520V  
Cies  
Coes  
1E+4  
Cres  
14  
12  
10  
8
1000  
100  
10  
1
6
4
2
0
0
20  
40  
60  
80  
100  
120  
0
5
10  
15  
20  
25  
30  
QGE,ꢀGATEꢀCHARGEꢀ[nC]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 15. Typicalꢀgateꢀcharge  
(IC=50A)  
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof  
collector-emitterꢀvoltage  
(VGE=0V,ꢀf=1MHz)  
Datasheet  
9
Vꢀ2.2  
2018-01-11  
IGB50N65H5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
1
D=0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
0.01  
single pulse  
0.01  
i:  
1
2
3
4
5
ri[K/W]: 0.1587018 0.2383852 0.1347618 0.01158283 1.8E-3  
τi[s]:  
3.4E-4  
2.8E-3  
0.0136827 0.2164563 3.533918  
0.001  
1E-6  
1E-5  
1E-4  
0.001  
0.01  
0.1  
1
tp,ꢀPULSEꢀWIDTHꢀ[s]  
Figure 17. IGBTꢀtransientꢀthermalꢀimpedance  
(D=tp/T)  
Datasheet  
10  
Vꢀ2.2  
2018-01-11  
IGB50N65H5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
Package Drawing PG-TO263-3  
MIN  
4.30  
0.00  
0.65  
0.95  
0.33  
1.17  
8.51  
7.10  
9.80  
6.50  
MAX  
4.57  
0.25  
0.85  
1.15  
0.65  
1.40  
9.45  
7.90  
10.31  
8.60  
MIN  
MAX  
0.180  
0.010  
0.033  
0.045  
0.026  
0.055  
0.372  
0.311  
0.406  
0.339  
0.169  
0.000  
0.026  
0.037  
0.013  
0.046  
0.335  
0.280  
0.386  
0.256  
Z8B00003324  
0
5
5
0
2.54  
5.08  
2
0.100  
0.200  
2
7.5mm  
14.61  
2.29  
0.70  
1.00  
16.05  
9.30  
4.50  
10.70  
3.65  
1.25  
15.88  
3.00  
1.60  
1.78  
16.25  
9.50  
4.70  
10.90  
3.85  
1.45  
0.575  
0.090  
0.028  
0.039  
0.632  
0.366  
0.177  
0.421  
0.144  
0.049  
0.625  
0.118  
0.063  
0.070  
0.640  
0.374  
0.185  
0.429  
0.152  
0.057  
30-08-2007  
01  
Datasheet  
11  
Vꢀ2.2  
2018-01-11  
IGB50N65H5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
Testing Conditions  
VGE(t)  
I,V  
90% VGE  
trr = ta + tb  
dIF/dt  
Qrr = Qa + Qb  
a
b
10% VGE  
t
Qa  
Qb  
IC(t)  
dI  
90% IC  
90% IC  
10% IC  
10% IC  
Figure C. Definition of diode switching  
characteristics  
t
VCE(t)  
t
t
td(off)  
tf  
td(on)  
tr  
Figure A.  
VGE(t)  
90% VGE  
Figure D.  
10% VGE  
t
IC(t)  
CC  
2% IC  
t
VCE(t)  
Figure E. Dynamic test circuit  
Parasitic inductance L ,  
parasitic capacitor C ,  
s
s
relief capacitor C ,  
(only for ZVT switching)  
r
t2  
t4  
E
=
VCE x IC x dt  
E
=
VCE x IC x dt  
off  
on  
2% VCE  
t1  
t3  
t
t1  
t2  
t3  
t4  
Figure B.  
Datasheet  
12  
Vꢀ2.2  
2018-01-11  
IGB50N65H5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
RevisionꢀHistory  
IGB50N65H5  
Revision:ꢀ2018-01-11,ꢀRev.ꢀ2.2  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.1  
2.2  
2017-05-19 Final data sheet  
2018-01-11 Remove of Pb-free symbol and editorial changes.  
Datasheet  
13  
Vꢀ2.2  
2018-01-11  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
ꢀ
ꢀ
ꢀ
ꢀ
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀInfineonꢀTechnologiesꢀAGꢀ2018.  
AllꢀRightsꢀReserved.  
ImportantꢀNotice  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics  
(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany  
informationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀand  
liabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthird  
party.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀof  
theꢀproductꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀof  
customer’sꢀtechnicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀthe  
completenessꢀofꢀtheꢀproductꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Forꢀfurtherꢀinformationꢀonꢀtheꢀproduct,ꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearest  
InfineonꢀTechnologiesꢀofficeꢀ(www.infineon.com).  
PleaseꢀnoteꢀthatꢀthisꢀproductꢀisꢀnotꢀqualifiedꢀaccordingꢀtoꢀtheꢀAECꢀQ100ꢀorꢀAECꢀQ101ꢀdocumentsꢀofꢀtheꢀAutomotive  
ElectronicsꢀCouncil.  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirementsꢀproductsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion  
pleaseꢀcontactꢀyourꢀnearestꢀInfineonꢀTechnologiesꢀoffice.  
ExceptꢀasꢀotherwiseꢀexplicitlyꢀapprovedꢀbyꢀInfineonꢀTechnologiesꢀinꢀaꢀwrittenꢀdocumentꢀsignedꢀbyꢀauthorized  
representativesꢀofꢀInfineonꢀTechnologies,ꢀInfineonꢀTechnologies’ꢀproductsꢀmayꢀnotꢀbeꢀusedꢀinꢀanyꢀapplicationsꢀwhereꢀa  
failureꢀofꢀtheꢀproductꢀorꢀanyꢀconsequencesꢀofꢀtheꢀuseꢀthereofꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀresultꢀinꢀpersonalꢀinjury.  

相关型号：

SI9130DB

 5- and 3.3-V Step-Down Synchronous Converters

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1-E3

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135_11

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9136_11

 Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130CG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130LG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130_11

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明