IGC54T65T8RM [INFINEON]

TRENCHSTOP™ IGBT 结合独特 TRENCHSTOP™ 和场终止技术，为行业树立新标准。;


型号：	IGC54T65T8RM
厂家：	Infineon
描述：	TRENCHSTOP™ IGBT 结合独特 TRENCHSTOP™ 和场终止技术，为行业树立新标准。双极性晶体管
文件：	总9页 (文件大小：103K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IGC54T65T8RM

IGBT3 Chip Medium Power

Features

• V_CES= 650 V

• I_Cn= 100 A

• 650 V trench & field stop technology

• High short circuit capability, self limiting short circuit current

• Positive temperature coeﬀicient

• Easy paralleling

Potential applications

• Drives

Product validation

• Technology qualified for industrial applications. Ready for validation in industrial applications

according to the relevant tests of IEC 60747 and 60749 or alternatively JEDEC47/20/22

Description

• Recommended for power modules

Type

Die size

Delivery form

IGC54T65T8RM

5.97 mm x 8.97 mm

Sawn on foil

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.00

2023-04-28

IGC54T65T8RM

IGBT3 Chip Medium Power

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Mechanical parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

Chip drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Bare die product specifics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Datasheet

Revision 1.00

2023-04-28

IGC54T65T8RM

IGBT3 Chip Medium Power

1 Mechanical parameters

Mechanical parameters

Table 1

Mechanical parameters

Parameter

Die size

Values

5.97 mm x 8.97 mm

Area total

53.55 mm²

Emitter pad size

Gate pad size

Silicon thickness

Wafer size

See chip drawing

80 µm

200 mm

486

Maximum possible chips per wafer

Passivation frontside

Photoimide

Pad metal

3.2 µm AlSiCu

Backside metal

Ni Ag - system

Die attach

Electrically conductive epoxy glue and sof solder

Wire bond: Al ≤ 500 µm

Ø 0.65 mm; max. 1.2 mm

Ambient atmosphere air, temperature 17°C – 25°C

Frontside interconnect

Reject ink dot size (valid for inked delivery form only)

Storage environment (<12 months) for original and sealed

MBB bags

Storage environment (<12 months) for open MBB bags

Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert

gas, Humidity <25%RH, Temperature 17°C – 25°C

Datasheet

Revision 1.00

2023-04-28

IGC54T65T8RM

IGBT3 Chip Medium Power

2 Characteristics

Characteristics

Table 2

Maximum ratings

Symbol Note or test condition

V_CES

Parameter

Values

Unit

Collector-emitter voltage

T_vj= 25 °C

650

DC collector current,

limited by T_vjmax

I_C

Pulsed collector current, t_p

I_Cpulse

300

limited by T_vjmax

Gate-emitter voltage

V_GE

Operating junction

temperature

T_vjop

-40...175

°C

Short-circuit withstand

time^{2) 3)}

t_SC

V_CC= 360 V, V_GE= 15 V

T_vj= 150 °C

µs

depending on thermal properties of assembly

not subject to production test - verified by design/characterization

allowed number of short circuits: <1000; time between short circuits: >1s

Table 3

Static characteristics (tested on wafer), Tvj = 25°C

Parameter

Symbol Note or test condition

Values

Typ.

Unit

Min.

Max.

Collector-emitter

V_BRCESI_C= 4 mA, V_GE= 0 V

V_CEsatV_GE= 15 V, I_C= 90 A

650

breakdown voltage

Collector-emitter

saturation voltage

1.08

5.1

1.55

5.8

1.82

6.4

Gate-emitter threshold

voltage

V_GEth

I_CES

I_C= 1.6 mA, V_GE= V_CE

V_CE= 650 V, V_GE= 0 V

V_CE= 0 V, V_GE= 20 V

Zero gate-voltage collector

current

0.54

600

µA

Ω

Gate-emitter leakage

current

I_GES

Internal gate resistance

R_G,int

Table 4

Electrical characteristics

Symbol Note or test condition

Parameter

Values

Typ.

1.55

Unit

Min.

Max.

Collector-emitter

saturation voltage

V_CEsatV_GE= 15 V, I_C= 100 A

T_vj= 25 °C

T_vj= 150 °C

1.75

Input capacitance

C_ies

C_res

V_CE= 25 V, V_GE= 0 V, f = 1000 kHz, T_vj= 25 °C

6160

183

Reverse transfer

capacitance

Datasheet

Revision 1.00

2023-04-28

IGC54T65T8RM

IGBT3 Chip Medium Power

2 Characteristics

Note:

In general, from reliability and lifetime point of view, the lower the operating junction temperature and/or

the applied voltage, the greater the expected lifetime of any semiconductor device.

For "Maximum ratings" and "Electrical characteristics": Not subject to production test, specified by design.

Datasheet

Revision 1.00

2023-04-28

IGC54T65T8RM

IGBT3 Chip Medium Power

3 Chip drawing

Chip drawing

Figure 1

Datasheet

Revision 1.00

2023-04-28

IGC54T65T8RM

IGBT3 Chip Medium Power

4 Bare die product specifics

•

Bare die product specifics

Switching characteristics and thermal properties are dependent on module design and mounting technology and

can therefore not be specified for a bare die.

•

AQL 0.65 for visual inspection according to failure catalogue.

Electrostatic discharge sensitive device according to MIL-STD 883.

The example application may be subject to change without prior notice. It is intended for information purposes

only, and should not be interpreted as a commitment.

•

Example application: FS100R07N2E4

Datasheet

Revision 1.00

2023-04-28

IGC54T65T8RM

IGBT3 Chip Medium Power

Revision history

Document revision

Date of release Description of changes

1.00

2023-04-28

Final datasheet

***Legacy Revisions***

V1.1 2012-04-05

Datasheet

Revision 1.00

2023-04-28

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

Edition 2023-04-28

Published by

Infineon Technologies AG

81726 Munich, Germany

Important notice

Please note that this product is not qualified

according to the AEC Q100 or AEC Q101 documents

of the Automotive Electronics Council.

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaﬀenheitsgarantie”).

With respect to any examples, hints or any typical

values stated herein and/or any information regarding

the application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities

of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer’s compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer’s products and any use of the product of

Infineon Technologies in customer’s applications.

Warnings

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies oﬀice.

2023 Infineon Technologies AG

Except as otherwise explicitly approved by Infineon

Technologies in

a written document signed by

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or

any consequences of the use thereof can reasonably

be expected to result in personal injury.

Document reference

IFX-ABG909-001

The data contained in this document is exclusively

intended for technically trained staﬀ. It is the

responsibility of customer’s technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to such

application.

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