IGP30N60T_09 [INFINEON]
Low Loss IGBT in TrenchStop and Fieldstop technology; 低损耗IGBT的TRENCHSTOP和场终止技术
| 型号： | IGP30N60T_09 |
| 厂家： | 
Infineon |
| 描述： | Low Loss IGBT in TrenchStop and Fieldstop technology |
| 文件： | 总13页 (文件大小：442K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGP30N60T
IGW30N60T
TrenchStop Series
Low Loss IGBT in TrenchStop and Fieldstop technology
C
•
•
•
•
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Designed for :
G
E
- Frequency Converters
- Uninterruptible Power Supply
TrenchStop® and Fieldstop technology for 600 V applications
offers :
•
PG-TO-220-3-1
PG-TO-247-3
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
•
•
•
•
•
•
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat),Tj=25°C Tj,max
Marking Code
G30T60
Package
PG-TO-220-3-1
PG-TO-247-3
IGP30N60T
IGW30N60T
600V
600V
30A
30A
1.5V
1.5V
175°C
175°C
G30T60
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
VCE
IC
600
V
A
60
30
TC = 100°C
Pulsed collector current, tp limited by Tjmax
ICpuls
-
VGE
tSC
90
90
±20
5
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
Gate-emitter voltage
V
Short circuit withstand time2)
µs
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Ptot
Tj
Tstg
187
W
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
-40...+175
-55...+175
260
°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.6 Nov. 09
Power Semiconductors
IGP30N60T
IGW30N60T
TrenchStop Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
0.80
RthJC
RthJA
K/W
PG-TO-220-3-1
PG-TO-247-3-21
62
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V(BR)CES
V
GE=0V, IC=0.2mA
600
-
-
V
Collector-emitter saturation voltage
VCE(sat) VGE = 15V, IC=30A
Tj=25°C
-
-
1.5
1.9
2.05
-
Tj=175°C
Gate-emitter threshold voltage
VGE(th)
ICES
IC=0.43mA,
4.1
4.9
5.7
V
CE=VGE
Zero gate voltage collector current
V
CE=600V,
µA
V
GE=0V
Tj=25°C
Tj=175°C
-
-
-
-
-
-
40
1000
100
-
Gate-emitter leakage current
Transconductance
IGES
gfs
V
V
CE=0V,VGE=20V
CE=20V, IC=30A
-
16.7
-
nA
S
Integrated gate resistor
RGint
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
V
V
CE=25V,
GE=0V,
-
-
-
-
1630
108
50
-
-
-
-
pF
f=1MHz
V
V
PG-TO-220-3-1
PG-TO-247-3-21
QGate
CC=480V, IC=30A
GE=15V
167
nC
nH
A
Internal emitter inductance
LE
-
-
-
7
13
275
-
-
-
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
V
GE=15V,tSC≤5µs
VCC = 400V,
Tj = 150°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.6 Nov. 09
Power Semiconductors
IGP30N60T
IGW30N60T
TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Unit
Parameter
Symbol
Conditions
min.
Typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
-
-
-
-
-
-
-
23
21
254
46
0.69
0.77
1.46
-
-
-
-
-
-
-
ns
Tj=25°C,
V
V
CC=400V,IC=30A,
GE=0/15V,
RG=10.6 Ω,
Lσ 1)=136nH,
Cσ 1)=39pF
mJ
Energy losses include
“tail” and diode
reverse recovery. 2)
Switching Characteristic, Inductive Load, at Tj=175 °C
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
-
-
-
-
-
-
-
24
26
292
90
1.0
1.1
2.1
-
-
-
-
-
-
-
ns
Tj=175°C,
V
V
CC=400V,IC=30A,
GE=0/15V,
RG= 10.6 Ω
Lσ 1)=136nH,
Cσ 1)=39pF
mJ
Energy losses include
“tail” and diode
reverse recovery.2)
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
2) Includes Reverse Recovery Losses from IKW30N60T due to dynamic test circuit in Figure E.
3
Rev. 2.6 Nov. 09
Power Semiconductors
IGP30N60T
IGW30N60T
TrenchStop Series
100A
10A
1A
tp=2µs
90A
80A
70A
60A
50A
40A
30A
20A
10A
0A
10µs
TC=80°C
50µs
TC=110°C
1ms
Ic
10ms
DC
Ic
0.1A
1V
100Hz
1kHz
10kHz
100kHz
10V
VCE, COLLECTOR
100V
1000V
f, SWITCHING FREQUENCY
-EMITTER VOLTAGE
Figure 1. Collector current as a function of
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤175°C;
GE=15V)
switching frequency
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
V
VGE = 0/+15V, RG = 10Ω)
50A
40A
30A
20A
10A
0A
160W
120W
80W
40W
0W
25°C
75°C
125°C
25°C
50°C
75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
Figure 4. Collector current as a function of
case temperature
(Tj ≤ 175°C)
(VGE ≥ 15V, Tj ≤ 175°C)
4
Rev. 2.6 Nov. 09
Power Semiconductors
IGP30N60T
IGW30N60T
TrenchStop Series
80A
70A
60A
50A
40A
30A
20A
10A
0A
50A
V
GE=20V
15V
V
GE=20V
40A
30A
20A
10A
0A
15V
13V
13V
11V
9V
11V
9V
7V
7V
0V
1V
2V
3V
0V
1V
2V
3V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
Figure 6. Typical output characteristic
(Tj = 25°C)
(Tj = 175°C)
2.5V
50A
40A
30A
20A
IC=60A
2.0V
1.5V
1.0V
0.5V
0.0V
IC=30A
IC=15A
TJ=175°C
10A
25°C
0A
0°C
50°C
100°C
150°C
0V
2V
4V
6V
8V
V
GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
(VCE=20V)
saturation voltage as a function of
junction temperature
(VGE = 15V)
5
Rev. 2.6 Nov. 09
Power Semiconductors
IGP30N60T
IGW30N60T
TrenchStop Series
td(off)
td(off)
tf
100ns
10ns
1ns
tf
td(on)
100ns
td(on)
tr
tr
10ns
0A
10A
20A
30A
10Ω
20Ω
30Ω
40Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
V
CE = 400V, VGE = 0/15V, RG = 10ꢀ,
VCE= 400V, VGE = 0/15V, IC = 30A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
7V
6V
td(off)
max.
typ.
5V
100ns
4V
3V
2V
1V
0V
min.
tf
td(on)
tr
10ns
25°C
50°C
75°C 100°C 125°C 150°C
-50°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.43mA)
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 30A, RG=10ꢀ,
Dynamic test circuit in Figure E)
6
Rev. 2.6 Nov. 09
Power Semiconductors
IGP30N60T
IGW30N60T
TrenchStop Series
*) Eon and Ets include losses
*) Eon and Ets include losses
due to diode recovery
Ets*
5.0mJ
4.0mJ
3.0mJ
2.0mJ
1.0mJ
0.0mJ
due to diode recovery
Ets*
3.0mJ
2.0mJ
1.0mJ
0.0mJ
Eoff
Eoff
Eon
*
Eon*
0A
10A
20A
30A
40A
50A
0Ω
10Ω
20Ω
30Ω
40Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
Figure 14. Typical switching energy losses
as a function of collector current
as a function of gate resistor
(inductive load, TJ = 175°C,
(inductive load, TJ = 175°C,
V
CE = 400V, VGE = 0/15V, RG = 10ꢀ,
VCE = 400V, VGE = 0/15V, IC = 30A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
*) Eon and Ets include losses
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
due to diode recovery
due to diode recovery
3.0mJ
2.5mJ
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
Ets*
Ets*
Eoff
Eoff
Eon*
Eon*
300V 350V 400V 450V 500V 550V
25°C
50°C
75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR EMITTER VOLTAGE
-
Figure 15. Typical switching energy losses
as a function of junction
temperature
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, VCE = 400V,
(inductive load, TJ = 175°C,
V
GE = 0/15V, IC = 30A, RG = 10ꢀ,
VGE = 0/15V, IC = 30A, RG = 10ꢀ,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
7
Rev. 2.6 Nov. 09
Power Semiconductors
IGP30N60T
IGW30N60T
TrenchStop Series
Ciss
1nF
15V
10V
5V
120V
480V
Coss
100pF
Crss
0V
0V
10V
20V
30V
40V
0nC 30nC 60nC 90nC 120nC 150nC 180nC
QGE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
Figure 18. Typical capacitance as a function
(IC=30 A)
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
12µs
10µs
8µs
400A
300A
200A
100A
0A
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
12V
14V
VGE, GATE
16V
18V
-
EMITTETR VOLTAGE
VGE, GATE-EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
T
Jmax<150°C)
(VCE ≤ 400V, Tj ≤ 150°C)
8
Rev. 2.6 Nov. 09
Power Semiconductors
IGP30N60T
IGW30N60T
TrenchStop Series
D=0.5
0.2
10-1K/W
0.1
R , ( K / W )
0.29566
0.25779
0.19382
0.05279
τ , ( s )
6.478*10-2
6.12*10-3
4.679*10-4
6.45*10-5
R2
0.05
R1
0.02
0.01
10-2K/W
C1=τ1/R1 C = /R2
τ2
2
single pulse
1µs 10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)
9
Rev. 2.6 Nov. 09
Power Semiconductors
IGP30N60T
IGW30N60T
TrenchStop Series
PG-TO-220-3-1
10
Rev. 2.6 Nov. 09
Power Semiconductors
IGP30N60T
IGW30N60T
TrenchStop Series
11
Rev. 2.6 Nov. 09
Power Semiconductors
IGP30N60T
IGW30N60T
TrenchStop Series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
tF
t
QS
10% Ir r m
QF
Ir r m
dir r /dt
VR
90% Ir r m
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r 2
τn
r1
r n
T (t)
j
p(t)
r 2
r1
rn
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Figure B. Definition of switching losses
12
Rev. 2.6 Nov. 09
Power Semiconductors
IGP30N60T
IGW30N60T
TrenchStop Series
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies
components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
13
Rev. 2.6 Nov. 09
Power Semiconductors
相关型号：
IGP30N65F5XKSA1
Insulated Gate Bipolar Transistor, 55A I(C), 650V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
INFINEON
IGP50N60TXKSA1
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明