IGW08T12_技术文档

IGW08T120

q

TrenchStop^®Series

Low Loss IGBT in TrenchStop^®and Fieldstop technology

C

•

Short circuit withstand time – 10µs

Designed for :

- Frequency Converters

G

E

- Uninterrupted Power Supply

•

TrenchStop^®and Fieldstop technology for 1200 V applications

offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

NPT technology offers easy parallel switching capability due to

positive temperature coefficient in V_CE(sat)

Low EMI

•

PG-TO-247-3

Low Gate Charge

Qualified according to JEDEC¹for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}T_j,maxMarking Code

1.7V G08T120

Package

IGW08T120

1200V

8A

PG-TO-247-3

150°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

1200

V

A

16

8

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_Cpuls

-

24

V

_CE≤ 1200V, T_j≤ 150°C

Gate-emitter voltage

V_GE

t_SC

V

±20

10

Short circuit withstand time²⁾

µs

V

_GE= 15V, V_CC≤ 1200V, T_j≤ 150°C

Power dissipation

P_tot

70

W

T_C= 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

T_j

T_stg

-

-40...+150

-55...+150

260

°C

¹J-STD-020 and JESD-022

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

1

Rev. 2.6 Nov. 09

Power Semiconductors

IGW08T120

q

TrenchStop^®Series

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

Thermal resistance,

junction – ambient

R_thJC

R_thJA

1.7

40

K/W

Electrical Characteristic, at T_j= 25 °C, unless otherwise specified

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_{(BR)C ES}

V

_GE=0V, I_C=0.5mA

1200

-

V

Collector-emitter saturation voltage

V_{C E(sa t)}V_GE= 15V, I_C=8A

T_j=25°C

-

1.7

2.0

2.2

-

T_j=125°C

T_j=150°C

Gate-emitter threshold voltage

Zero gate voltage collector current

V_{GE(th )}

I_{C ES}

I_C=0.3mA,V_CE=V_GE

5.0

5.8

6.5

V

_{C E}=1200V,

mA

V

_GE=0V

T_j=25°C

T_j=150°C

-

5

0.2

2.0

100

-

Gate-emitter leakage current

Transconductance

I_GES

g_fs

V

_{C E}=0V,V_GE=20V

_{C E}=20V, I_C=8A

nA

S

Integrated gate resistor

R_Gint

none

Ω

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

C_iss

C_oss

C_rss

V

_{C E}=25V,

_GE=0V,

-

600

36

28

-

pF

f=1MHz

V

Q_{Ga te}

_CC=960V, I_C=8A

_GE=15V

53

nC

nH

A

Internal emitter inductance

L_E

-

13

48

-

measured 5mm (0.197 in.) from case

Short circuit collector current¹⁾

I_{C (SC)}

V

_GE=15V,t_SC≤10µs

V_CC= 600V,

T_j= 25°C

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

2

Rev. 2.6 Nov. 09

Power Semiconductors

IGW08T120

q

TrenchStop^®Series

Switching Characteristic, Inductive Load, at T_j=25 °C

Value

Unit

Parameter

Symbol

Conditions

min.

typ.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

t_{d (on)}

t_r

t_{d (off)}

t_f

E_on

E_{o ff}

E_ts

-

40

23

450

70

0.67

0.7

1.37

-

ns

T_j=25°C,

V

_CC=600V,I_C=8A,

_GE=-15/15V,

R_G=81Ω,

L_σ²⁾=180nH,

C_σ²⁾=39pF

mJ

Energy losses include

“tail” and diode

reverse recovery.

Switching Characteristic, Inductive Load, at T_j=150 °C

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

t_{d (on)}

t_r

t_{d (off)}

t_f

E_on

E_{o ff}

E_ts

-

40

26

570

140

1.08

1.2

-

ns

T_j=150°C,

V

_CC=600V, I_C=8A,

_GE=-15/15V,

R_G= 81Ω,

L_σ²⁾=180nH,

C_σ²⁾=39pF

mJ

Energy losses include

“tail” and diode

reverse recovery.

2.28

²⁾Leakage inductance L_σand Stray capacity C_σdue to dynamic test circuit in Figure E.

3

Rev. 2.6 Nov. 09

Power Semiconductors

IGW08T120

q

TrenchStop^®Series

t_p=2µs

10A

1A

20A

15A

10A

5A

T_C=80°C

10µs

50µs

T_C=110°C

150µs

500µs

I_c

0,1A

20ms

DC

0,01A

1V

0A

10Hz

100Hz

1kHz

10kHz

100kHz

10V

100V

1000V

f, SWITCHING FREQUENCY

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

Figure 2. Safe operating area

switching frequency

(D = 0, T_C= 25°C,

(T_j≤ 150°C, D = 0.5, V_CE= 600V,

T_j≤150°C;V_GE=15V)

V

_GE= 0/+15V, R_G= 81Ω)

15A

10A

5A

70W

60W

50W

40W

30W

20W

10W

0W

0A

25°C

75°C

125°C

25°C

50°C

75°C

100°C

125°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature

Figure 4. Collector current as a function of

case temperature

(T_j≤ 150°C)

(V_GE≥ 15V, T_j≤ 150°C)

4

Rev. 2.6 Nov. 09

Power Semiconductors

IGW08T120

q

TrenchStop^®Series

20A

15A

10A

5A

20A

V

_GE=17V

15V

V

_GE=17V

15V

15A

10A

5A

13V

11V

9V

13V

11V

9V

7V

0A

0V

1V

2V

3V

4V

5V

6V

0V

1V

2V

3V

4V

5V

6V

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

Figure 6. Typical output characteristic

(T_j= 25°C)

(T_j= 150°C)

3,0V

2,5V

2,0V

1,5V

1,0V

0,5V

0,0V

20A

15A

10A

I_C=15A

I_C=8A

I_C=5A

I_C=2.5A

5A

T_J=150°C

25°C

0A

0V

2V

4V

6V

8V

10V

12V

-50°C

0°C

50°C

100°C

V

_GE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic

T_J, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

(V_CE=20V)

saturation voltage as a function of

junction temperature

(V_GE= 15V)

5

Rev. 2.6 Nov. 09

Power Semiconductors

IGW08T120

q

TrenchStop^®Series

t_d(off)

t_f

100ns

10ns

1ns

100 ns

t_d(on)

10 ns

t_r

1 ns

5A

10A

15A

5Ω

50Ω

100Ω

150Ω

200Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, T_J=150°C,

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T_J=150°C,

V_CE=600V, V_GE=0/15V, R_G=81ꢀ,

Dynamic test circuit in Figure E)

V_CE=600V, V_GE=0/15V, I_C=8A,

Dynamic test circuit in Figure E)

t_d(off)

7V

6V

5V

4V

3V

2V

1V

0V

max.

typ.

100ns

t_f

min.

t_d(on)

t_r

10ns

0°C

50°C

100°C

150°C

-50°C

0°C

50°C

100°C

150°C

T_J, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(I_C= 0.3mA)

function of junction temperature

(inductive load, V_CE=600V,

V

_GE=0/15V, I_C=8A, R_G=81ꢀ,

Dynamic test circuit in Figure E)

6

Rev. 2.6 Nov. 09

Power Semiconductors

IGW08T120

q

TrenchStop^®Series

*) E_onand E_tsinclude losses

due to diode recovery

3,2 mJ

2,8 mJ

2,4 mJ

2,0 mJ

1,6 mJ

1,2 mJ

0,8 mJ

0,4 mJ

0,0 mJ

E_ts*

6,0mJ

4,0mJ

2,0mJ

0,0mJ

E

E_on*

off

E_off

E_on*

E

E_off*

on

E

E_on*

off

5A

10A

15A

5Ω

50Ω

100Ω

150Ω

200Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, T_J=150°C,

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, T_J=150°C,

V_CE=600V, V_GE=0/15V, R_G=81ꢀ,

Dynamic test circuit in Figure E)

V_CE=600V, V_GE=0/15V, I_C=8A,

Dynamic test circuit in Figure E)

*) E_onand E_tsinclude losses

due to diode recovery

*) E_onand E_tsinclude losses

due to diode recovery

E_ts*

2.0mJ

1.5mJ

1.0mJ

0.5mJ

0.0mJ

3mJ

E_off

2mJ

E_ts*

E_on*

E_off

1mJ

0mJ

E_on*

E *

E

on

off

25°C

50°C

75°C

100°C

125°C

400V

500V

600V

700V

800V

T_J, JUNCTION TEMPERATURE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses

as a function of junction

temperature

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, V_CE=600V,

V_GE=0/15V, I_C=8A, R_G=81ꢀ,

Dynamic test circuit in Figure E)

(inductive load, T_J=150°C,

V_GE=0/15V, I_C=8A, R_G=81ꢀ,

Dynamic test circuit in Figure E)

7

Rev. 2.6 Nov. 09

Power Semiconductors

IGW08T120

q

TrenchStop^®Series

1nF

C_iss

15V

10V

5V

240V

960V

100pF

C_oss

C_rss

0V

10pF

0V

0nC

25nC

50nC

10V

20V

Q

_GE, GATE CHARGE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

Figure 18. Typical capacitance as a function

(I_C=8 A)

of collector-emitter voltage

(V_GE=0V, f = 1 MHz)

15µs

10µs

5µs

75A

50A

25A

0A

0µs

12V

14V

16V

12V

14V

16V

18V

V

_GE, GATE-EMITTETR VOLTAGE

V_GE, GATE-EMITTETR VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(V_CE=600V, start at T_J=25°C)

Figure 20. Typical short circuit collector

current as a function of gate-

emitter voltage

(V_CE≤ 600V, T_j≤ 150°C)

8

Rev. 2.6 Nov. 09

Power Semiconductors

IGW08T120

q

TrenchStop^®Series

V_CE

600V

400V

200V

0V

600V

400V

200V

0V

30A

20A

10A

0A

20A

10A

0A

I_C

V_CE

I_C

0us

0.5us

1.5us

0.5us

1us

1.5us

1us

t, TIME

Figure 21. Typical turn on behavior

(V_GE=0/15V, R_G=81ꢀ, T_j= 150°C,

Dynamic test circuit in Figure E)

Figure 22. Typical turn off behavior

(V_GE=15/0V, R_G=81ꢀ, T_j= 150°C,

Dynamic test circuit in Figure E)

10⁰K/W

D=0.5

0.2

0.1

R , ( K / W )

0.187

τ , ( s )

1.73*10^-1

2.75*10^-2

2.57*10^-3

2.71*10^-4

R₂

0.575

0.589

0.350

0.05

R₁

10^-1K/W

0.02

0.01

C₁=τ /R₁C₂=τ /R₂

1

2

single pulse

10^-2K/W

10µs

100µs

1ms

10ms

100ms

t_P, PULSE WIDTH

Figure 23. IGBT transient thermal resistance

(D = t_p/ T)

9

Rev. 2.6 Nov. 09

Power Semiconductors

IGW08T120

q

TrenchStop^®Series

10

Rev. 2.6 Nov. 09

Power Semiconductors

IGW08T120

q

TrenchStop^®Series

τ₁

τ

r²₂

τ_n

r₁

r _n

T (t)

j

p(t)

r ₂

r₁

r_n

Figure A. Definition of switching times

T

C

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses

Figure E. Dynamic test circuit

Leakage inductance L_σ=180nH

and Stray capacity C_σ=39pF.

11

Rev. 2.6 Nov. 09

Power Semiconductors

IGW08T120

q

TrenchStop^®Series

Edition 2006-01

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this data sheet shall in no event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device, Infineon Technologies

hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types

in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or

system. Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

12

Rev. 2.6 Nov. 09

Power Semiconductors


型号：	IGW08T12
厂家：	Infineon
描述：	IGBT TRENCHSTOP™ 双极性晶体管
文件：	总12页 (文件大小：347K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IGW08T12 [INFINEON]

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