IGW25T12 [INFINEON]
IGBT TRENCHSTOP™;型号: | IGW25T12 |
厂家: | Infineon |
描述: | IGBT TRENCHSTOP™ 双极性晶体管 |
文件: | 总12页 (文件大小:349K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IGW25T120
TrenchStop® Series
Low Loss IGBT in TrenchStop® and Fieldstop technology
C
•
•
Short circuit withstand time – 10µs
Designed for :
- Frequency Converters
G
E
- Uninterrupted Power Supply
•
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
•
PG-TO-247-3
•
•
•
•
•
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat),Tj=25°C Tj,max
1.7V
Marking
Package
IGW25T120
1200V
25A
G25T120
PG-TO-247-3
150°C
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
VCE
IC
1200
V
A
50
25
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
ICpuls
-
75
75
V
CE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
VGE
tSC
V
±20
10
Short circuit withstand time2)
µs
V
GE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation
Ptot
190
W
TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj
Tstg
-
-40...+150
-55...+150
260
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.4
Nov. 09
Power Semiconductors
IGW25T120
TrenchStop® Series
Thermal Resistance
Parameter
Symbol
RthJC
RthJA
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
0.65
40
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V(BR)C ES
1200
-
-
V
V
GE=0V, IC=500µA
Collector-emitter saturation voltage
VC E(sa t) VGE = 15V, IC=25A
Tj=25°C
-
-
-
1.7
2.0
2.2
2.2
-
-
Tj=125°C
Tj=150°C
Gate-emitter threshold voltage
VGE(th )
IC ES
IC=1mA,
5.0
5.8
6.5
V
C E=VGE
Zero gate voltage collector current
V
C E=1200V,
mA
V
GE=0V
Tj=25°C
Tj=150°C
-
-
-
-
-
-
-
16
8
0.25
2.5
600
-
Gate-emitter leakage current
Transconductance
IGES
gfs
V
V
C E=0V,VGE=20V
C E=20V, IC=25A
nA
S
Integrated gate resistor
RGint
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
V
V
C E=25V,
GE=0V,
-
-
-
-
1860
96
82
-
-
-
-
pF
f=1MHz
V
V
QGa te
CC=960V, IC=25A
GE=15V
155
nC
nH
A
Internal emitter inductance
LE
-
-
13
-
-
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC (SC)
150
V
GE=15V,tSC ≤10µs
VCC = 600V,
Tj = 25°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.4
Nov. 09
Power Semiconductors
IGW25T120
TrenchStop® Series
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td (on)
tr
td (off)
tf
Eon
Eo ff
Ets
-
-
-
-
-
-
-
50
30
560
70
2.0
2.2
4.2
-
-
-
-
-
-
-
ns
Tj=25°C,
V
V
CC=600V,IC=25A
GE=-15/15V,
RG=22Ω,
Lσ 2)=180nH,
Cσ 2)=39pF
mJ
Energy losses include
“tail” and diode
reverse recovery.
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td (on)
tr
td (off)
tf
Eon
Eo ff
Ets
-
-
-
-
-
-
-
50
32
-
-
-
-
-
-
-
ns
Tj=150°C
V
V
CC=600V,IC=25A,
GE=-15/15V,
660
130
3.0
4.0
7.0
RG= 22Ω,
Lσ 2)=180nH,
Cσ 2)=39pF
mJ
Energy losses include
“tail” and diode
reverse recovery.
2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
3
Rev. 2.4
Nov. 09
Power Semiconductors
IGW25T120
TrenchStop® Series
tp=3µs
70A
60A
50A
40A
30A
20A
10A
0A
10µs
TC=80°C
10A
1A
50µs
TC=110°C
150µs
500µs
Ic
Ic
20ms
DC
0,1A
10Hz
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
Figure 2. Safe operating area
(D = 0, TC = 25°C,
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 600V,
Tj ≤150°C;VGE=15V)
V
GE = 0/+15V, RG = 22Ω)
40A
30A
20A
10A
0A
150W
100W
50W
0W
25°C
75°C
125°C
25°C
50°C
75°C
100°C
125°C
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
Figure 4. Collector current as a function of
case temperature
(Tj ≤ 150°C)
(VGE ≥ 15V, Tj ≤ 150°C)
4
Rev. 2.4
Nov. 09
Power Semiconductors
IGW25T120
TrenchStop® Series
70A
60A
50A
40A
30A
20A
10A
0A
70A
60A
V
GE=17V
15V
VGE=17V
15V
50A
40A
30A
20A
10A
0A
13V
11V
9V
13V
11V
9V
7V
7V
0V
1V
2V
3V
4V
5V
6V
0V
1V
2V
3V
4V
5V
6V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
Figure 6. Typical output characteristic
(Tj = 25°C)
(Tj = 150°C)
70A
60A
50A
40A
30A
20A
3,0V
2,5V
2,0V
1,5V
1,0V
0,5V
0,0V
IC=50A
IC=25A
IC=15A
IC=8A
TJ=150°C
10A
25°C
0A
0V
2V
4V
6V
8V
10V
12V
-50°C
0°C
50°C
100°C
V
GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
(VCE=20V)
saturation voltage as a function of
junction temperature
(VGE = 15V)
5
Rev. 2.4
Nov. 09
Power Semiconductors
IGW25T120
TrenchStop® Series
td(off)
td(off)
tf
tf
100ns
10ns
1ns
100 ns
10 ns
1 ns
td(on)
tr
td(on)
tr
0A
10A
20A
30A
40A
5Ω
15Ω
25Ω
35Ω
45Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=22ꢀ,
Dynamic test circuit in Figure E)
VCE=600V, VGE=0/15V, IC=25A,
Dynamic test circuit in Figure E)
td(off)
7V
6V
5V
4V
3V
2V
1V
0V
max.
typ.
100ns
tf
min.
td(on)
tr
10ns
-50°C
0°C
50°C
100°C
150°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 1.0mA)
function of junction temperature
(inductive load, VCE=600V,
V
GE=0/15V, IC=25A, RG=22ꢀ,
Dynamic test circuit in Figure E)
6
Rev. 2.4
Nov. 09
Power Semiconductors
IGW25T120
TrenchStop® Series
*) Eon and Etsinclude losses
due to diode recovery
*) Eon and Ets include losses
due to diode recovery
14,0mJ
12,0mJ
10,0mJ
8,0mJ
6,0mJ
4,0mJ
2,0mJ
0,0mJ
8 mJ
6 mJ
4 mJ
2 mJ
0 mJ
Ets*
Eoff
Ets*
Eon*
Eoff
Eon*
10A
20A
30A
40A
5Ω
15Ω
25Ω
35Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=22ꢀ,
Dynamic test circuit in Figure E)
VCE=600V, VGE=0/15V, IC=25A,
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
*) Eon and Ets include losses
7mJ
10mJ
9mJ
8mJ
7mJ
6mJ
5mJ
4mJ
3mJ
2mJ
1mJ
0mJ
due to diode recovery
due to diode recovery
6mJ
5mJ
4mJ
Ets*
3mJ
Ets*
Eoff
2mJ
Eoff
Eon*
1mJ
0mJ
Eon*
50°C
100°C
150°C
400V
500V
600V
700V
800V
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, VCE=600V,
(inductive load, TJ=150°C,
V
GE=0/15V, IC=25A, RG=22ꢀ,
VGE=0/15V, IC=25A, RG=22ꢀ,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
7
Rev. 2.4
Nov. 09
Power Semiconductors
IGW25T120
TrenchStop® Series
Ciss
1nF
15V
10V
5V
240V
960V
Coss
Crss
100pF
10pF
0V
0V
10V
20V
0nC
50nC
100nC
150nC
200nC
Q
GE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
Figure 18. Typical capacitance as a function
(IC=25 A)
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
15µs
10µs
5µs
200A
150A
100A
50A
0µs
0A
12V
14V
16V
12V
14V
16V
18V
V
GE, GATE-EMITTETR VOLTAGE
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
Figure 20. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE ≤ 600V, Tj ≤ 150°C)
8
Rev. 2.4
Nov. 09
Power Semiconductors
IGW25T120
TrenchStop® Series
VCE
600V
400V
200V
0V
60A
60A
600V
400V
200V
0V
40A
40A
IC
20A
20A
VCE
IC
0A
0A
0us
0.5us
1us
1.5us
1us
0.5us
1.5us
t, TIME
t, TIME
Figure 21. Typical turn on behavior
(VGE=0/15V, RG=22ꢀ, Tj = 150°C,
Dynamic test circuit in Figure E)
Figure 22. Typical turn off behavior
(VGE=15/0V, RG=22ꢀ, Tj = 150°C,
Dynamic test circuit in Figure E)
D=0.5
0.2
10-1K/W
0.1
0.05
0.02
0.01
R , ( K / W )
0.229
τ , ( s )
1.10*10-1
1.56*10-2
1.35*10-3
1.52*10-4
R2
0.192
10-2K/W
10-3K/W
single pulse
0.174
0.055
R1
C1=τ /R1 C2=τ /R2
1
2
10µs
100µs
1ms
10ms
100ms
tP, PULSE WIDTH
Figure 23. IGBT transient thermal resistance
(D = tp / T)
9
Rev. 2.4
Nov. 09
Power Semiconductors
IGW25T120
TrenchStop® Series
10
Rev. 2.4
Nov. 09
Power Semiconductors
IGW25T120
TrenchStop® Series
τ1
τ
r22
τn
r1
r n
T (t)
j
p(t)
r 2
r1
rn
T
Figure A. Definition of switching times
C
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
and Stray capacity Cσ =39pF.
Figure B. Definition of switching losses
11
Rev. 2.4
Nov. 09
Power Semiconductors
IGW25T120
TrenchStop® Series
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 11/18/09.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
12
Rev. 2.4
Nov. 09
Power Semiconductors
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