IGW30N65L5 [INFINEON]
IGBT TRENCHSTOP™ 5;
| 型号： | IGW30N65L5 |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ 5 双极性晶体管 |
| 文件： | 总14页 (文件大小：1617K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
LowꢀVCE(sat)ꢀIGBTꢀinꢀTRENCHSTOPTMꢀꢀ5ꢀtechnology
IGW30N65L5
650VꢀIGBTꢀLowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
Dataꢀsheet
IndustrialꢀPowerꢀControl
IGW30N65L5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
LowꢀVCE(sat)ꢀIGBTꢀinꢀTRENCHSTOPTMꢀꢀ5ꢀtechnology
ꢀ
C
E
FeaturesꢀandꢀBenefits:
LowꢀVCE(sat)ꢀL5ꢀtechnologyꢀoffering
•ꢀVeryꢀlowꢀcollector-emitterꢀsaturationꢀvoltageꢀVCEsat
•ꢀBest-in-Classꢀtradeoffꢀbetweenꢀconductionꢀandꢀswitchingꢀlosses
•ꢀ650Vꢀbreakdownꢀvoltage
G
•ꢀLowꢀgateꢀchargeꢀQG
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating
•ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀmodels:
http://www.infineon.com/igbt/
Applications:
•ꢀUninterruptibleꢀpowerꢀsupplies
•ꢀSolarꢀphotovoltaicꢀinverters
•ꢀWeldingꢀmachines
ProductꢀValidation:
G
C
E
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.05V 175°C
Marking
Package
PG-TO247-3
IGW30N65L5
650V
30A
G30EL5
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.2
2020-10-07
IGW30N65L5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Datasheet
3
Vꢀ2.2
2020-10-07
IGW30N65L5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
Tcꢀ=ꢀ100°C
IC
85.0
62.0
A
1)
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
120.0
120.0
A
A
Turn off safe operating area
-
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs1)
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
VGE
Ptot
V
PowerꢀdissipationꢀTcꢀ=ꢀ25°C
PowerꢀdissipationꢀTcꢀ=ꢀ100°C
227.0
114.0
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,2)
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-a)
-
-
-
-
0.66 K/W
40 K/W
Thermal resistance
junction - ambient
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ30.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ100°C
650
-
-
V
V
-
-
-
1.05 1.35
1.05
1.04
-
-
Tvjꢀ=ꢀ150°C
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.40mA,ꢀVCEꢀ=ꢀ20V
4.2
5.0
5.8
V
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ150°C
-
-
-
-
40
-
-
Zero gate voltage collector current ICES
µA
400
2000
Tvjꢀ=ꢀ175°C
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ30.0A
-
-
-
100
-
nA
S
65.0
1) Defined by design. Not subject to production test.
2) Package not recommended for surface mount applications.
Datasheet
4
Vꢀ2.2
2020-10-07
IGW30N65L5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
4900
42
-
-
-
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V
fꢀ=ꢀ1000kHz
Output capacitance
Coes
Cres
pF
Reverse transfer capacitance
18
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ30.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
168.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
33
11
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ30.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ10.0Ω,ꢀRG(off)ꢀ=ꢀ10.0Ω,
Lσꢀ=ꢀ60nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Diode: IDW30E65D1.
Turn-off delay time
Fall time
308
51
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.47
1.35
1.82
mJ
mJ
mJ
Turn-off energy
Total switching energy
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
31
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ30.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ10.0Ω,ꢀRG(off)ꢀ=ꢀ10.0Ω,
Lσꢀ=ꢀ60nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Diode: IDW30E65D1.
13
Turn-off delay time
Fall time
370
150
0.68
2.18
2.86
ns
ns
Turn-on energy
Eon
Eoff
Ets
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
5
Vꢀ2.2
2020-10-07
IGW30N65L5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
250
225
200
175
150
125
100
75
100
10
1
50
25
not for linear use
0.1
0
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
(D=0,ꢀTC=25°C,ꢀTvj≤175°C,ꢀVGE=15V,ꢀtp=1µs,
ICmaxꢀdefinedꢀbyꢀdesignꢀ-ꢀnotꢀsubjectꢀto
production test)
temperature
(Tvj≤175°C)
90
80
70
60
50
40
30
20
10
0
90
VGE = 20V
18V
15V
12V
10V
8V
80
70
60
50
40
30
20
10
0
7V
6V
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
(VGE≥15V,ꢀTvj≤175°C)
Datasheet
6
Vꢀ2.2
2020-10-07
IGW30N65L5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
90
90
80
70
60
50
40
30
20
10
0
VGE = 20V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ150°C
18V
15V
12V
10V
8V
80
70
60
50
40
30
20
10
0
7V
6V
5V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2
3
4
5
6
7
8
9
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
1.250
ICꢀ=ꢀ7.5A
ICꢀ=ꢀ15A
ICꢀ=ꢀ30A
td(off)
tf
td(on)
tr
1.125
1.000
0.875
0.750
0.625
0.500
1000
100
10
1
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
90
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=10Ω,ꢀRG(off)=10Ω,ꢀdynamic
test circuit in Figure E)
Datasheet
7
Vꢀ2.2
2020-10-07
IGW30N65L5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
td(off)
tf
td(on)
td(off)
tf
td(on)
tr
1000
100
10
tr
1000
100
10
1
1
0.0
10.0 20.0 30.0 40.0 50.0 60.0 70.0
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistance
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=30A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=30A,ꢀRG(on)=10Ω,ꢀRG(off)=10Ω,ꢀdynamic
test circuit in Figure E)
7
6
5
4
3
2
1
7
6
5
4
3
2
1
0
typ.
min.
max.
Eoff
Eon
Ets
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
90
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
functionꢀofꢀcollectorꢀcurrent
(IC=0.4mA)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=10Ω,ꢀRG(off)=10Ω,
dynamic test circuit in Figure E)
Datasheet
8
Vꢀ2.2
2020-10-07
IGW30N65L5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
3.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
10
20
30
40
50
60
70
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistance
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=30A,ꢀRG(on)=10Ω,ꢀRG(off)=10Ω,ꢀdynamic
test circuit in Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=30A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
3.6
16
Eoff
Eon
Ets
VCCꢀ=ꢀ130V
VCCꢀ=ꢀ520V
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
14
12
10
8
6
4
2
0
200
250
300
350
400
450
500
0
20
40
60
80 100 120 140 160 180
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
QG,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=0/15V,
IC=30A,ꢀRG(on)=10Ω,ꢀRG(off)=10Ω,ꢀdynamic
test circuit in Figure E)
Figure 16. Typicalꢀgateꢀcharge
(IC=30A)
Datasheet
9
Vꢀ2.2
2020-10-07
IGW30N65L5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
1
Cies
Coes
Cres
1E+4
D = 0.5
0.2
0.1
0.05
1000
0.02
0.01
0.1
single pulse
100
i:
1
2
3
4
5
6
ri[K/W]: 0.010702 0.155056 0.172937 0.290173 0.027136 2.2E-3
τi[s]:
2.0E-5
2.2E-4
2.0E-3
0.011473 0.092564 1.827121
10
0.01
0
5
10
15
20
25
30
1E-6
1E-5
1E-4
0.001
0.01
0.1
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
(VGE=0V,ꢀf=1MHz)
Datasheet
10
Vꢀ2.2
2020-10-07
IGW30N65L5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
Package Drawing PG-TO247-3
MILLIMETERS
MAX.
DIMENSIONS
MIN.
4.70
2.20
1.50
1.00
1.60
2.57
0.38
20.70
13.08
0.51
15.50
12.38
3.40
1.00
A
A1
A2
b
5.30
2.60
2.50
1.40
2.41
3.43
0.89
21.50
17.65
1.35
16.30
14.15
5.10
2.60
DOCUMENT NO.
Z8B00003327
b1
b2
c
REVISION
D
06
D1
D2
E
3:1
SCALE
0 1 2 3 4
5mm
E1
E2
E3
e
EUROPEAN PROJECTION
5.44
L
19.80
3.85
3.50
5.35
6.04
20.40
4.50
3.70
6.25
6.30
L1
P
ISSUE DATE
25.07.2018
Q
S
Datasheet
11
Vꢀ2.2
2020-10-07
IGW30N65L5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
12
Vꢀ2.2
2020-10-07
IGW30N65L5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
RevisionꢀHistory
IGW30N65L5
Revision:ꢀ2020-10-07,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2014-12-10 Final data sheet
2020-10-07 VGE(th): test condition update
2.1
2.2
Datasheet
13
Vꢀ2.2
2020-10-07
Trademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
ꢀ
ꢀ
ꢀ
ꢀ
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀInfineonꢀTechnologiesꢀAGꢀ2020.
AllꢀRightsꢀReserved.
ImportantꢀNotice
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics
(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany
informationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀand
liabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthird
party.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀof
theꢀproductꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀof
customer’sꢀtechnicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀthe
completenessꢀofꢀtheꢀproductꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Forꢀfurtherꢀinformationꢀonꢀtheꢀproduct,ꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearest
InfineonꢀTechnologiesꢀofficeꢀ(www.infineon.com).
PleaseꢀnoteꢀthatꢀthisꢀproductꢀisꢀnotꢀqualifiedꢀaccordingꢀtoꢀtheꢀAECꢀQ100ꢀorꢀAECꢀQ101ꢀdocumentsꢀofꢀtheꢀAutomotive
ElectronicsꢀCouncil.
Warnings
Dueꢀtoꢀtechnicalꢀrequirementsꢀproductsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion
pleaseꢀcontactꢀyourꢀnearestꢀInfineonꢀTechnologiesꢀoffice.
ExceptꢀasꢀotherwiseꢀexplicitlyꢀapprovedꢀbyꢀInfineonꢀTechnologiesꢀinꢀaꢀwrittenꢀdocumentꢀsignedꢀbyꢀauthorized
representativesꢀofꢀInfineonꢀTechnologies,ꢀInfineonꢀTechnologies’ꢀproductsꢀmayꢀnotꢀbeꢀusedꢀinꢀanyꢀapplicationsꢀwhereꢀa
failureꢀofꢀtheꢀproductꢀorꢀanyꢀconsequencesꢀofꢀtheꢀuseꢀthereofꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀresultꢀinꢀpersonalꢀinjury.
相关型号：
IGW40N60H3FKSA1
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3
INFINEON
IGW40N60TPXKSA1
Insulated Gate Bipolar Transistor, 67A I(C), 600V V(BR)CES, N-Channel, TO-247,
INFINEON
IGW40N65F5AXKSA1
Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-247,
INFINEON
IGW40N65H5AXKSA1
Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-247,
INFINEON
©2020 ICPDF网 联系我们和版权申明