IGW40T12 [INFINEON]

IGBT TRENCHSTOP™;


型号：	IGW40T12
厂家：	Infineon
描述：	IGBT TRENCHSTOP™ 双极性晶体管
文件：	总13页 (文件大小：301K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IGW40T120

TrenchStop^®Series

Low Loss IGBT in TrenchStop^®and Fieldstop technology



Short circuit withstand time – 10s

Designed for :

- Frequency Converters

- Uninterrupted Power Supply



TrenchStop^®and Fieldstop technology for 1200 V applications

offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

NPT technology offers easy parallel switching capability due to

positive temperature coefficient in V_CE(sat)

Low EMI



PG-TO-247-3

Low Gate Charge

Qualified according to JEDEC¹for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}T_j,maxMarking Code

1.7V G40T120

Package

IGW40T120

1200V

40A

PG-TO-247-3

150C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25C

V_{C E}

I_C

1200

T_C= 100C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

V_CE 1200V, T_j 150C

Gate-emitter voltage

Short circuit withstand time²⁾

V_GE= 15V, V_CC 1200V, T_j 150C

Power dissipation

I_{Cp ul s}

105

V_{G E}

t_SC

20

s

P_{t ot}

270

T_C= 25C

Operating junction temperature

Storage temperature

T_j

-40...+150

-55...+150

260

C

T_{st g}

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

¹J-STD-020 and JESD-022

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.4 Nov. 09

Power Semiconductors

IGW40T120

TrenchStop^®Series

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

R_{t hJC}

0.45

K/W

Thermal resistance,

junction – ambient

R_{t hJA}

Electrical Characteristic, at T_j= 25 C, unless otherwise specified

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_{( BR )C ES}V_{G E}=0V, I_C=1.5mA

1200

Collector-emitter saturation voltage

V_{C E( sat )}V_{G E}= 15V, I_C=40A

T_j=25C

1.7

2.1

2.3

T_j=125C

T_j=150C

Gate-emitter threshold voltage

V_{G E( t h)}

I_{CE S}

I_C=1.5mA,V_{C E}=V_{G E}

5.0

5.8

6.5

Zero gate voltage collector current

V_{C E}=1200V,

V_{G E}=0V

T_j=25C

0.4

4.0

600

T_j=150C

Gate-emitter leakage current

Transconductance

I_{GE S}

g_fs

V_{C E}=0V,V_{G E}=20V

V_{C E}=20V, I_C=40A

Integrated gate resistor

R_{G int}

Rev. 2.4 Nov. 09

Power Semiconductors

IGW40T120

TrenchStop^®Series

Dynamic Characteristic

Input capacitance

C_{i ss}

V_{C E}=25V,

V_{G E}=0V,

f=1MHz

2500

130

110

203

Output capacitance

Reverse transfer capacitance

Gate charge

C_{os s}

C_{rs s}

Q_{Gat e}

V_{C C}=960V, I_C=40A

V_{G E}=15V

Internal emitter inductance

L_E

measured 5mm (0.197 in.) from case

Short circuit collector current¹⁾

I_{C( SC )}

210

V_{G E}=15V,t_SC10s

V_{C C}= 600V,

T_j= 25C

Switching Characteristic, Inductive Load, at T_j=25 C

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

t_{d( o n)}

t_r

t_{d( of f)}

t_f

T_j=25C,

V_{C C}=600V,I_C=40A,

V_{G E}=0/15V,

Turn-off delay time

Fall time

480

R_G=15,

L_^{2 )}=180nH,

C_²⁾=39pF

Turn-on energy

Turn-off energy

Total switching energy

E_{o n}

E_{o ff}

E_{t s}

3.3

3.2

6.5

Energy losses include

“tail” and diode

reverse recovery.

Switching Characteristic, Inductive Load, at T_j=150 C

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

t_{d( o n)}

t_r

t_{d( of f)}

t_f

T_j=150C

V_{C C}=600V,I_C=40A,

V_{G E}=0/15V,

Turn-off delay time

Fall time

580

120

5.0

5.4

10.4

R_G= 15,

L_^{2 )}=180nH,

C_²⁾=39pF

Turn-on energy

Turn-off energy

Total switching energy

E_{o n}

E_{o ff}

E_{t s}

Energy losses include

“tail” and diode

reverse recovery.

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

²⁾Leakage inductance L_and Stray capacity C_due to dynamic test circuit in Figure E.

Rev. 2.4 Nov. 09

Power Semiconductors

IGW40T120

TrenchStop^®Series

100A

t_p=3µs

100A

80A

60A

40A

20A

T_C=80°C

10µs

T_C=110°C

10A

50µs

150µs

500µs

I_c

20ms

I_c

0,1A

10Hz

100Hz

1kHz

10kHz

100kHz

10V

100V

1000V

f, SWITCHING FREQUENCY

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency

Figure 2. Safe operating area

(D = 0, T_C= 25C,

(T_j 150C, D = 0.5, V_CE= 600V,

V_GE= 0/+15V, R_G= 15)

T_j150C;V_GE=15V)

70A

60A

50A

40A

30A

20A

10A

250W

200W

150W

100W

50W

25°C

75°C

125°C

25°C

50°C

75°C

100°C

125°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature

Figure 4. Collector current as a function of

case temperature

(T_j 150C)

(V_GE 15V, T_j 150C)

Rev. 2.4 Nov. 09

Power Semiconductors

IGW40T120

TrenchStop^®Series

100A

90A

80A

70A

60A

50A

40A

30A

20A

10A

100A

90A

V_GE=17V

80A

70A

60A

50A

40A

30A

20A

10A

15V

13V

11V

13V

11V

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

Figure 6. Typical output characteristic

(T_j= 25°C)

(T_j= 150°C)

100A

90A

80A

70A

60A

50A

40A

30A

3,5V

3,0V

2,5V

2,0V

1,5V

1,0V

0,5V

0,0V

I_C=80A

I_C=40A

I_C=25A

I_C=10A

20A

T_J=150°C

25°C

10A

-50°C

0°C

50°C

100°C

10V 12V

V_GE, GATE-EMITTER VOLTAGE

T_J, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic

Figure 8. Typical collector-emitter

(V_CE=20V)

saturation voltage as a function of

junction temperature

(V_GE= 15V)

Rev. 2.4 Nov. 09

Power Semiconductors

IGW40T120

TrenchStop^®Series

t_d(off)

1000 ns

t_d(off)

100ns

10ns

1ns

t_f

100 ns

10 ns

1 ns

t_d(on)

t_r

t_d(on)

t_r

20A

40A

60A











I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, T_J=150°C,

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T_J=150°C,

V_CE=600V, V_GE=0/15V, R_G=15Ω,

Dynamic test circuit in Figure E)

V_CE=600V, V_GE=0/15V, I_C=40A,

Dynamic test circuit in Figure E)

t_d(off)

max.

typ.

100ns

t_f

min.

t_d(on)

t_r

10ns

-50°C

0°C

50°C

100°C

150°C

0°C

50°C

100°C

150°C

T_J, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(I_C= 1.5mA)

function of junction temperature

(inductive load, V_CE=600V,

V_GE=0/15V, I_C=40A, R_G=15Ω,

Dynamic test circuit in Figure E)

Rev. 2.4 Nov. 09

Power Semiconductors

IGW40T120

TrenchStop^®Series

*) E_onand E_tsinclude losses

due to diode recovery

*) E_onand E_tsinclude losses

due to diode recovery

E_ts*

15 mJ

25,0mJ

20,0mJ

15,0mJ

10,0mJ

5,0mJ

E_ts*

10 mJ

E_on*

E_off

5 mJ

0 mJ

0,0mJ

10A 20A 30A 40A 50A 60A 70A









I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, T_J=150°C,

as a function of collector current

(inductive load, T_J=150°C,

V_CE=600V, V_GE=0/15V, R_G=15Ω,

Dynamic test circuit in Figure E)

V_CE=600V, V_GE=0/15V, I_C=40A,

Dynamic test circuit in Figure E)

*) E_onand E_tsinclude losses

due to diode recovery

15mJ

10mJ

5mJ

E_ts*

10mJ

E_ts*

E_off

5mJ

E_off

E_on*

0mJ

50°C

100°C

150°C

400V

500V

600V

700V

800V

T_J, JUNCTION TEMPERATURE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses

as a function of junction

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

temperature

(inductive load, V_CE=600V,

V_GE=0/15V, I_C=40A, R_G=15Ω,

Dynamic test circuit in Figure E)

(inductive load, T_J=150°C,

V_GE=0/15V, I_C=40A, R_G=15Ω,

Dynamic test circuit in Figure E)

Rev. 2.4 Nov. 09

Power Semiconductors

IGW40T120

TrenchStop^®Series

C_iss

15V

10V

1nF

100pF

10pF

240V

960V

C_oss

C_rss

10V

20V

0nC

50nC

100nC 150nC 200nC 250nC

Q_GE, GATE CHARGE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(I_C=40 A)

(V_GE=0V, f = 1 MHz)

15µs

10µs

5µs

300A

200A

100A

0µs

12V

14V

16V

12V

14V

16V

18V

V_GE, GATE-EMITTETR VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(V_CE=600V, start at T_J=25°C)

Figure 20. Typical short circuit collector

current as a function of gate-

emitter voltage

(V_CE 600V, T_j 150C)

Rev. 2.4 Nov. 09

Power Semiconductors

IGW40T120

TrenchStop^®Series

V_CE

600V

400V

200V

600V

400V

200V

60A

40A

20A

60A

40A

20A

I_C

V_CE

I_C

0us

0.5us

1us

1.5us

0.5us

1us

1.5us

t, TIME

Figure 21. Typical turn on behavior

(V_GE=0/15V, R_G=15Ω, T_j= 150C,

Dynamic test circuit in Figure E)

Figure 22. Typical turn off behavior

(V_GE=15/0V, R_G=15Ω, T_j= 150C,

Dynamic test circuit in Figure E)

D=0.5

0.2

10^-1K/W

0.1

R , ( K / W )

0.159

0.133

0.120

0.038

 , ( s )  

1.10*10^-1

1.56*10^-2

1.35*10^-3

1.51*10^-4

0.05

0.02

0.01

10^-2K/W

single pulse

R₁

R₂

C₁=₁/R₁C₂=₂/R₂

10^-3K/W

10µs

100µs

1ms

10ms

100ms

t_P, PULSE WIDTH

Figure 23. IGBT transient thermal resistance

(D = t_p/ T)

Rev. 2.4 Nov. 09

Power Semiconductors

IGW40T120

TrenchStop^®Series

PG-TO247-3

Rev. 2.4 Nov. 09

Power Semiconductors

IGW40T120

TrenchStop^®Series

₁

₂

_n

r₁

r ₂

r _n

T (t)

p(t)

r ₂

r₁

r_n

Figure A. Definition of switching times

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses

Figure E. Dynamic test circuit

Leakage inductance L_=180nH

and Stray capacity C_=39pF.

Rev. 2.4 Nov. 09

Power Semiconductors

IGW40T120

TrenchStop^®Series

Rev. 2.4 Nov. 09

Power Semiconductors

IGW40T120

TrenchStop^®Series

Edition 2006-01

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this data sheet shall in no event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device, Infineon Technologies

hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types

in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or

system. Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

Rev. 2.4 Nov. 09

Power Semiconductors

IGW40T12 [INFINEON]

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