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IHW30N120R5 [INFINEON]

IGBT RC Soft Switching;
IHW30N120R5
型号： IHW30N120R5
厂家： Infineon    Infineon
描述：

IGBT RC Soft Switching

双极性晶体管
文件： 总15页 (文件大小：1440K)
中文：  中文翻译
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IHW30N120R5  
ResonantꢀSwitchingꢀSeries  
ReverseꢀConductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀdiode  
ꢀ
C
E
Features:  
•ꢀPowerfulꢀmonolithicꢀbodyꢀdiodeꢀwithꢀlowꢀforwardꢀvoltage  
designedꢀforꢀsoftꢀcommutation  
•ꢀTRENCHSTOPTMꢀtechnologyꢀoffering:  
-ꢀveryꢀtightꢀparameterꢀdistribution  
G
-ꢀhighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior  
-ꢀlowꢀVCEsat  
-ꢀeasyꢀparallelꢀswitchingꢀcapabilityꢀdueꢀtoꢀpositive  
temperatureꢀcoefficientꢀinꢀVCEsat  
•ꢀLowꢀEMI  
•ꢀQualifiedꢀaccordingꢀtoꢀJESD-022ꢀforꢀtargetꢀapplications  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogenꢀfreeꢀ(accordingꢀtoꢀIECꢀ61249-2-21)  
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:  
http://www.infineon.com/igbt/  
Applications:  
•ꢀInductionꢀcooking  
•ꢀMicrowaveꢀovens  
G
C
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters  
Type  
VCE  
IC  
VCEsat,ꢀTvj=25°C Tvjmax  
1.55V 175°C  
Marking  
Package  
PG-TO247-3  
IHW30N120R5  
1200V  
30A  
H30MR5  
Datasheet  
www.infineon.com  
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument  
Vꢀ2.3  
2019-09-20  
IHW30N120R5  
ResonantꢀSwitchingꢀSeries  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
Datasheet  
2
Vꢀ2.3  
2019-09-20  
IHW30N120R5  
ResonantꢀSwitchingꢀSeries  
MaximumꢀRatings  
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.  
Parameter  
Symbol  
Value  
Unit  
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C  
VCE  
1200  
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
Tcꢀ=ꢀ25°C  
Tcꢀ=ꢀ100°C  
IC  
60.0  
30.0  
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
Non repetitive peak collector current1)  
ICpuls  
ICSM  
90.0  
200  
A
A
Turn off safe operating area  
VCEꢀ≤ꢀ1200V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs  
-
90.0  
A
A
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
Tcꢀ=ꢀ25°C  
Tcꢀ=ꢀ100°C  
IF  
60.0  
30.0  
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
IFpuls  
VGE  
90.0  
A
V
Gate-emitter voltage  
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)  
±20  
±25  
PowerꢀdissipationꢀTcꢀ=ꢀ25°C  
PowerꢀdissipationꢀTcꢀ=ꢀ100°C  
330.0  
165.0  
Ptot  
W
Operating junction temperature  
Storage temperature  
Tvj  
-40...+175  
-55...+150  
°C  
°C  
Tstg  
Soldering temperature,  
wave soldering 1.6mm (0.063in.) from case for 10s  
°C  
260  
0.6  
Mounting torque, M3 screw  
Maximum of mounting processes: 3  
M
Nm  
ThermalꢀResistance  
Value  
min. typ. max.  
Parameter  
Symbol Conditions  
Unit  
RthꢀCharacteristics  
IGBT thermal resistance,  
junction - case  
Rth(j-c)  
Rth(j-c)  
Rth(j-a)  
-
-
-
-
-
-
0.45 K/W  
0.45 K/W  
40 K/W  
Diode thermal resistance,  
junction - case  
Thermal resistance  
junction - ambient  
1) capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3µs  
Datasheet  
3
Vꢀ2.3  
2019-09-20  
IHW30N120R5  
ResonantꢀSwitchingꢀSeries  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
StaticꢀCharacteristic  
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.50mA  
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ30.0A  
Tvjꢀ=ꢀ25°C  
Collector-emitter saturation voltage VCEsat  
Tvjꢀ=ꢀ125°C  
1200  
-
-
V
V
-
-
-
1.55 1.85  
1.80  
1.90  
-
-
Tvjꢀ=ꢀ175°C  
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ30.0A  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ125°C  
Tvjꢀ=ꢀ175°C  
-
-
-
1.80 2.00  
Diode forward voltage  
VF  
V
2.00  
2.10  
-
-
Gate-emitter threshold voltage  
VGE(th)  
ICꢀ=ꢀ0.75mA,ꢀVCEꢀ=ꢀVGE  
5.1  
5.8  
6.4  
V
VCEꢀ=ꢀ1200V,ꢀVGEꢀ=ꢀ0V  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Zero gate voltage collector current ICES  
-
-
-
100  
-
µA  
630  
Gate-emitter leakage current  
Transconductance  
IGES  
gfs  
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V  
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ30.0A  
-
-
-
100  
-
nA  
S
23.0  
none  
Integrated gate resistor  
rG  
Ω
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
DynamicꢀCharacteristic  
Input capacitance  
Cies  
-
-
-
1800  
55  
-
-
-
Output capacitance  
Coes  
Cres  
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz  
pF  
Reverse transfer capacitance  
45  
VCCꢀ=ꢀ960V,ꢀICꢀ=ꢀ30.0A,  
VGEꢀ=ꢀ15V  
Gate charge  
QG  
LE  
-
-
235.0  
13.0  
-
-
nC  
nH  
Internal emitter inductance  
measured 5mm (0.197 in.) from  
case  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Turn-off delay time  
Fall time  
td(off)  
tf  
-
-
-
330  
33  
-
-
-
ns  
ns  
Tvjꢀ=ꢀ25°C,  
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ30.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ10.0Ω,ꢀRG(off)ꢀ=ꢀ10.0Ω,  
Lσꢀ=ꢀ175nH,ꢀCσꢀ=ꢀ40pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Turn-off energy  
Eoff  
1.10  
mJ  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off energy, soft switching  
Eoff  
dv/dtꢀ=ꢀ200.0V/µs  
-
0.12  
-
mJ  
Datasheet  
4
Vꢀ2.3  
2019-09-20  
IHW30N120R5  
ResonantꢀSwitchingꢀSeries  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C  
Turn-off delay time  
Fall time  
td(off)  
tf  
-
-
-
395  
125  
2.30  
-
-
-
ns  
ns  
Tvjꢀ=ꢀ175°C,  
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ30.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ10.0Ω,ꢀRG(off)ꢀ=ꢀ10.0Ω,  
Lσꢀ=ꢀ175nH,ꢀCσꢀ=ꢀ40pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Turn-off energy  
Eoff  
mJ  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off energy, soft switching  
Eoff  
dv/dtꢀ=ꢀ200.0V/µs  
-
0.37  
-
mJ  
Datasheet  
5
Vꢀ2.3  
2019-09-20  
IHW30N120R5  
ResonantꢀSwitchingꢀSeries  
100  
330  
297  
264  
231  
198  
165  
132  
99  
not for linear use  
10  
1
66  
33  
0.1  
0
1
10  
100  
1000  
25  
50  
75  
100  
125  
150  
175  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea  
(D=0,ꢀTC=25°C,ꢀTvj≤175°C;ꢀVGE=15V;ꢀtp=1µs)  
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase  
temperature  
(Tvj≤175°C)  
60  
50  
40  
30  
20  
10  
0
90  
VGE = 20V  
17V  
15V  
13V  
11V  
9V  
80  
70  
60  
50  
40  
30  
20  
10  
0
8V  
7V  
5V  
25  
50  
75  
100  
125  
150  
175  
0
1
2
3
4
5
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase  
temperature  
Figure 4. Typicalꢀoutputꢀcharacteristic  
(Tvj=25°C)  
(VGE≥15V,ꢀTvj≤175°C)  
Datasheet  
6
Vꢀ2.3  
2019-09-20  
IHW30N120R5  
ResonantꢀSwitchingꢀSeries  
90  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 20V  
Tvj = 25°C  
Tvj =175°C  
17V  
15V  
13V  
11V  
9V  
80  
70  
60  
50  
40  
30  
20  
10  
0
8V  
7V  
5V  
0
1
2
3
4
5
2
4
6
8
10  
12  
14  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  
Figure 5. Typicalꢀoutputꢀcharacteristic  
(Tvj=175°C)  
Figure 6. Typicalꢀtransferꢀcharacteristic  
(VCE=20V)  
3.0  
1000  
100  
10  
IC = 15A  
IC = 30A  
IC = 60A  
td(off)  
tf  
2.5  
2.0  
1.5  
1.0  
25  
50  
75  
100  
125  
150  
175  
0
10  
20  
30  
40  
50  
60  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
aꢀfunctionꢀofꢀjunctionꢀtemperature  
collectorꢀcurrent  
(VGE=15V)  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,  
VGE=0/15V,ꢀrG=10Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
Datasheet  
7
Vꢀ2.3  
2019-09-20  
IHW30N120R5  
ResonantꢀSwitchingꢀSeries  
1E+4  
1000  
100  
10  
td(off)  
tf  
td(off)  
tf  
1000  
100  
10  
0
10  
20  
30  
40  
50  
25  
50  
75  
100  
125  
150  
175  
rG,ꢀGATEꢀRESISTORꢀ[Ω]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
resistor  
junctionꢀtemperature  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,  
VGE=0/15V,ꢀIC=30A,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=0/15V,  
IC=30A,ꢀrG=10Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
7.0  
6.2  
5.4  
4.6  
3.8  
3.0  
5
4
3
2
1
0
typ.  
min.  
max.  
Eoff  
25  
50  
75  
100  
125  
150  
175  
0
10  
20  
30  
40  
50  
60  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
ofꢀjunctionꢀtemperature  
(IC=0.75mA)  
functionꢀofꢀcollectorꢀcurrent  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,  
VGE=0/15V,ꢀrG=10Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
Datasheet  
8
Vꢀ2.3  
2019-09-20  
IHW30N120R5  
ResonantꢀSwitchingꢀSeries  
3.2  
2.5  
2.2  
1.9  
1.6  
1.3  
1.0  
Eoff  
Eoff  
2.9  
2.6  
2.3  
2.0  
0
10  
20  
30  
40  
50  
25  
50  
75  
100  
125  
150  
175  
rG,ꢀGATEꢀRESISTORꢀ[Ω]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀgateꢀresistor  
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=0/15V,  
IC=30A,ꢀrG=10Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,  
VGE=0/15V,ꢀIC=30A,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
2.7  
1.0  
Eoff  
Tvj = 25°C  
Tvj = 175°C  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
2.4  
2.1  
1.8  
1.5  
400 450 500 550 600 650 700 750 800  
0
10  
20  
30  
40  
50  
60  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀemitterꢀvoltage  
(inductiveꢀload,ꢀTvj=175°C,ꢀVGE=0/15V,  
IC=30A,ꢀrG=10Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
Figure 16. Typicalꢀturnꢀoffꢀswitchingꢀenergyꢀlossꢀfor  
softꢀswitching  
(inductiveꢀload,VCE=600V,ꢀVGE=0/15V,  
rG=10Ω,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)  
Datasheet  
9
Vꢀ2.3  
2019-09-20  
IHW30N120R5  
ResonantꢀSwitchingꢀSeries  
16  
1E+4  
1000  
100  
VCCꢀ=ꢀ240V  
VCCꢀ=ꢀ960V  
Cies  
Coes  
Cres  
14  
12  
10  
8
6
4
2
0
10  
0
50  
100  
150  
200  
250  
0
5
10  
15  
20  
25  
30  
QGE,ꢀGATEꢀCHARGEꢀ[nC]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 17. Typicalꢀgateꢀcharge  
(IC=30A)  
Figure 18. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof  
collector-emitterꢀvoltage  
(VGE=0V,ꢀf=1MHz)  
1
1
D = 0.5  
0.2  
0.1  
0.1  
D = 0.5  
0.2  
0.1  
0.05  
0.1  
0.02  
0.05  
0.01  
0.01  
0.001  
0.01  
0.02  
single pulse  
0.01  
single pulse  
0.001  
i:  
1
2
3
4
i:  
1
2
3
4
ri[K/W]: 6.5E-3 0.1328125 0.1953125 0.1158854  
ri[K/W]: 0.03036972 0.1122227 0.13125 0.1761444  
τi[s]:  
9.0E-6 2.1E-4  
3.2E-3  
0.016711  
τi[s]:  
3.6E-5  
10.0E-5  
2.3E-3  
0.03551  
1E-4  
1E-4  
1E-7 1E-6 1E-5 1E-4 0.001 0.01  
0.1  
1
1E-7 1E-6 1E-5 1E-4 0.001 0.01  
0.1  
1
tp,ꢀPULSEꢀWIDTHꢀ[s]  
tp,ꢀPULSEꢀWIDTHꢀ[s]  
Figure 19. IGBTꢀtransientꢀthermalꢀresistance  
(D=tp/T)  
Figure 20. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa  
functionꢀofꢀpulseꢀwidth  
(D=tp/T)  
Datasheet  
10  
Vꢀ2.3  
2019-09-20  
IHW30N120R5  
ResonantꢀSwitchingꢀSeries  
90  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
Tvj = 25°C  
Tvj = 175°C  
IF = 15A  
IF = 30A  
IF = 60A  
80  
70  
60  
50  
40  
30  
20  
10  
0
0
1
2
3
4
5
25  
50  
75  
100  
125  
150  
175  
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 21. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 22. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction  
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature  
Datasheet  
11  
Vꢀ2.3  
2019-09-20  
IHW30N120R5  
ResonantꢀSwitchingꢀSeries  
Package Drawing PG-TO247-3  
Datasheet  
12  
Vꢀ2.3  
2019-09-20  
IHW30N120R5  
ResonantꢀSwitchingꢀSeries  
Testing Conditions  
VGE(t)  
I,V  
90% VGE  
trr = ta + tb  
dIF/dt  
Qrr = Qa + Qb  
a
b
10% VGE  
t
Qa  
Qb  
IC(t)  
dI  
90% IC  
90% IC  
10% IC  
10% IC  
Figure C. Definition of diode switching  
characteristics  
t
VCE(t)  
t
t
td(off)  
tf  
td(on)  
tr  
Figure A.  
VGE(t)  
90% VGE  
Figure D.  
10% VGE  
t
IC(t)  
CC  
2% IC  
t
VCE(t)  
Figure E. Dynamic test circuit  
Parasitic inductance L ,  
parasitic capacitor C ,  
s
s
relief capacitor C ,  
(only for ZVT switching)  
r
t2  
t4  
E
=
VCE x IC x dt  
E
=
VCE x IC x dt  
off  
on  
2% VCE  
t1  
t3  
t
t1  
t2  
t3  
t4  
Figure B.  
Datasheet  
13  
Vꢀ2.3  
2019-09-20  
IHW30N120R5  
ResonantꢀSwitchingꢀSeries  
RevisionꢀHistory  
IHW30N120R5  
Revision:ꢀ2019-09-20,ꢀRev.ꢀ2.3  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.1  
2.2  
2.3  
2018-04-17  
1
2018-09-18 Added thermal network on Fig.19 & 20  
2019-09-20 additional parameter in maximum ratings table: non repetitive peak collector current  
Datasheet  
14  
Vꢀ2.3  
2019-09-20  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
ꢀ
ꢀ
ꢀ
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Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀInfineonꢀTechnologiesꢀAGꢀ2019.  
AllꢀRightsꢀReserved.  
ImportantꢀNotice  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics  
(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany  
informationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀand  
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