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IHW30N65R5_16 [INFINEON]

Reverse conducting IGBT with monolithic body diode;
IHW30N65R5_16
型号： IHW30N65R5_16
厂家： Infineon    Infineon
描述：

Reverse conducting IGBT with monolithic body diode

双极性晶体管
文件： 总15页 (文件大小：2104K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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ResonantꢀSwitchingꢀSeries  
ReverseꢀconductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀdiode  
IHW30N65R5  
Dataꢀsheet  
IndustrialꢀPowerꢀControl  
IHW30N65R5  
ResonantꢀSwitchingꢀSeries  
ReverseꢀconductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀdiode  
ꢀ
C
Features:  
•ꢀPowerfulꢀmonolithicꢀreverse-conductingꢀdiodeꢀwithꢀlowꢀforward  
voltage  
•ꢀTRENCHSTOPTMꢀtechnologyꢀoffers:  
-ꢀveryꢀtightꢀparameterꢀdistribution  
-ꢀhighꢀruggednessꢀandꢀstableꢀtemperatureꢀbehavior  
-ꢀveryꢀlowꢀVCEsatꢀandꢀlowꢀEoff  
G
E
-ꢀeasyꢀparallelꢀswitchingꢀcapabilityꢀdueꢀtoꢀpositive  
temperatureꢀcoefficientꢀinꢀVCEsat  
•ꢀLowꢀEMI  
•ꢀQualifiedꢀaccordingꢀtoꢀJESD-022ꢀforꢀtargetꢀapplications  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:  
http://www.infineon.com/igbt/  
Applications:  
•ꢀInductionꢀcooking  
•ꢀInverterizedꢀmicrowaveꢀovens  
•ꢀResonantꢀconverters  
G
C
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters  
Type  
VCE  
IC  
VCEsat,ꢀTvj=25°C Tvjmax  
1.35V 175°C  
Marking  
Package  
IHW30N65R5  
650V  
30A  
H30ER5  
PG-TO247-3  
2
Rev.ꢀ2.1,ꢀꢀ2015-12-22  
IHW30N65R5  
ResonantꢀSwitchingꢀSeries  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
3
Rev.ꢀ2.1,ꢀꢀ2015-12-22  
IHW30N65R5  
ResonantꢀSwitchingꢀSeries  
MaximumꢀRatings  
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.  
Parameter  
Symbol  
Value  
Unit  
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C  
VCE  
650  
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
TCꢀ=ꢀ25°C  
TCꢀ=ꢀ100°C  
IC  
60.0  
30.0  
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
ICpuls  
90.0  
90.0  
A
A
Turn off safe operating area  
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs  
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
TCꢀ=ꢀ25°C  
TCꢀ=ꢀ100°C  
IF  
23.0  
14.0  
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
IFpuls  
VGE  
42.0  
±20  
A
V
Gate-emitter voltage  
PowerꢀdissipationꢀTCꢀ=ꢀ25°C  
PowerꢀdissipationꢀTCꢀ=ꢀ100°C  
176.0  
88.0  
Ptot  
W
Operating junction temperature  
Storage temperature  
Tvj  
-40...+175  
-55...+150  
°C  
°C  
Tstg  
Soldering temperature,  
wave soldering 1.6mm (0.063in.) from case for 10s  
°C  
260  
0.6  
Mounting torque, M3 screw  
Maximum of mounting processes: 3  
M
Nm  
ThermalꢀResistance  
Parameter  
Symbol Conditions  
Max.ꢀValue  
Unit  
Characteristic  
IGBT thermal resistance,  
junction - case  
Rth(j-c)  
Rth(j-c)  
Rth(j-a)  
0.81  
3.81  
40  
K/W  
K/W  
K/W  
Diode thermal resistance,  
junction - case  
Thermal resistance  
junction - ambient  
4
Rev.ꢀ2.1,ꢀꢀ2015-12-22  
IHW30N65R5  
ResonantꢀSwitchingꢀSeries  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Unit  
min. typ. max.  
Parameter  
Symbol Conditions  
StaticꢀCharacteristic  
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA  
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ30.0A  
650  
-
-
V
V
Collector-emitter saturation voltage VCEsat  
Tvjꢀ=ꢀ25°C  
-
-
1.35 1.70  
1.60  
Tvjꢀ=ꢀ175°C  
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ30.0A  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Diode forward voltage  
VF  
-
-
1.70 2.10  
V
V
2.00  
-
Gate-emitter threshold voltage  
VGE(th)  
ICꢀ=ꢀ0.30mA,ꢀVCEꢀ=ꢀVGE  
3.2  
4.0  
4.8  
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Zero gate voltage collector current ICES  
-
-
-
-
40  
-
µA  
Gate-emitter leakage current  
Transconductance  
IGES  
gfs  
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V  
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ30.0A  
-
-
-
100  
-
nA  
S
35.0  
none  
Integrated gate resistor  
rG  
Ω
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
DynamicꢀCharacteristic  
Input capacitance  
Cies  
-
-
-
3690  
34  
-
-
-
Output capacitance  
Coes  
Cres  
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz  
pF  
Reverse transfer capacitance  
15  
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ30.0A,  
VGEꢀ=ꢀ15V  
Gate charge  
QG  
LE  
-
-
153.0  
13.0  
-
-
nC  
nH  
Internal emitter inductance  
measured 5mm (0.197 in.) from  
case  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
29  
17  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ25°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ30.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ13.0Ω,ꢀRG(off)ꢀ=ꢀ13.0Ω,  
Lσꢀ=ꢀ35nH,ꢀCσꢀ=ꢀ32pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
220  
8
ns  
ns  
Turn-on energy  
Eon  
Eoff  
Ets  
0.85  
0.24  
1.09  
mJ  
mJ  
mJ  
Turn-off energy  
Total switching energy  
5
Rev.ꢀ2.1,ꢀꢀ2015-12-22  
IHW30N65R5  
ResonantꢀSwitchingꢀSeries  
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Diode reverse recovery time  
Diode reverse recovery charge  
trr  
-
-
-
95  
-
-
-
ns  
µC  
A
Tvjꢀ=ꢀ25°C,  
VRꢀ=ꢀ400V,  
IFꢀ=ꢀ30.0A,  
diF/dtꢀ=ꢀ1100A/µs  
Qrr  
1.90  
28.0  
Diode peak reverse recovery current Irrm  
Diode peak rate of fall of reverse  
recoveryꢀcurrentꢀduringꢀtb  
dirr/dt  
-
-2000  
-
A/µs  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
28  
16  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ175°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ30.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ13.0Ω,ꢀRG(off)ꢀ=ꢀ13.0Ω,  
Lσꢀ=ꢀ35nH,ꢀCσꢀ=ꢀ32pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
240  
18  
ns  
ns  
Turn-on energy  
Eon  
Eoff  
Ets  
0.95  
0.41  
1.36  
mJ  
mJ  
mJ  
Turn-off energy  
Total switching energy  
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C  
Diode reverse recovery time  
Diode reverse recovery charge  
trr  
-
-
-
114  
3.30  
45.0  
-
-
-
ns  
µC  
A
Tvjꢀ=ꢀ175°C,  
VRꢀ=ꢀ400V,  
IFꢀ=ꢀ30.0A,  
Qrr  
Diode peak reverse recovery current Irrm  
diF/dtꢀ=ꢀ1100A/µs  
Diode peak rate of fall of reverse  
recoveryꢀcurrentꢀduringꢀtb  
dirr/dt  
-
-1650  
-
A/µs  
6
Rev.ꢀ2.1,ꢀꢀ2015-12-22  
IHW30N65R5  
ResonantꢀSwitchingꢀSeries  
100  
10  
1
200  
180  
160  
140  
120  
100  
80  
not for linear use  
60  
40  
20  
0.1  
0
1
10  
100  
1000  
25  
50  
75  
100  
125  
150  
175  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
Figure 1. Safeꢀoperatingꢀarea  
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase  
(D=0,ꢀTC=25°C,ꢀTvj≤175°C,ꢀVGE=15V,ꢀtp=1µs)  
temperature  
(Tvj≤175°C)  
70  
60  
50  
40  
30  
20  
10  
0
90  
VGE=20V  
15V  
13V  
11V  
9V  
80  
70  
60  
50  
40  
30  
20  
10  
0
8V  
7V  
6V  
25  
50  
75  
100  
125  
150  
175  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase  
temperature  
Figure 4. Typicalꢀoutputꢀcharacteristic  
(Tvj=25°C)  
(VGE≥15V,ꢀTvj≤175°C)  
7
Rev.ꢀ2.1,ꢀꢀ2015-12-22  
IHW30N65R5  
ResonantꢀSwitchingꢀSeries  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
VGE = 20V  
17V  
15V  
13V  
11V  
9V  
Tvjꢀ=ꢀ25°C  
Tvj=ꢀ175°C  
80  
70  
60  
50  
40  
30  
20  
10  
0
8V  
7V  
6V  
5V  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
2
3
4
5
6
7
8
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  
Figure 5. Typicalꢀoutputꢀcharacteristic  
(Tvj=175°C)  
Figure 6. Typicalꢀtransferꢀcharacteristic  
(VCE=20V)  
2.00  
1000  
IC = 7A  
IC = 15A  
IC = 30A  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
td(off)  
tf  
td(on)  
tr  
100  
10  
1
25  
50  
75  
100  
125  
150  
175  
0
10  
20  
30  
40  
50  
60  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
aꢀfunctionꢀofꢀjunctionꢀtemperature  
collectorꢀcurrent  
(VGE=15V)  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,  
VGE=0/15V,ꢀRGon=13Ω,ꢀRGoff=13Ω,ꢀdynamic  
test circuit in Figure E)  
8
Rev.ꢀ2.1,ꢀꢀ2015-12-22  
IHW30N65R5  
ResonantꢀSwitchingꢀSeries  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
td(on)  
1000  
100  
10  
1000  
tr  
100  
10  
1
1
10  
20  
30  
40  
50  
60  
70  
80  
25  
50  
75  
100  
125  
150  
175  
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
resistance  
junctionꢀtemperature  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,  
VGE=0/15V,ꢀIC=30A,ꢀdynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,  
IC=30A,ꢀRGon=13Ω,ꢀRGoff=13Ω,ꢀdynamicꢀtest  
circuit in Figure E)  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
typ.  
min.  
max.  
Eoff  
Eon  
Ets  
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
50  
60  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
ofꢀjunctionꢀtemperature  
functionꢀofꢀcollectorꢀcurrent  
(IC=0.3mA)  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,  
VGE=0/15V,ꢀRGon=13Ω,ꢀRGoff=13Ω,ꢀdynamic  
test circuit in Figure E)  
9
Rev.ꢀ2.1,ꢀꢀ2015-12-22  
IHW30N65R5  
ResonantꢀSwitchingꢀSeries  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
1.75  
Eoff  
Eon  
Ets  
Eoff  
Eon  
Ets  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
10  
20  
30  
40  
50  
60  
70  
80  
25  
50  
75  
100  
125  
150  
175  
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀgateꢀresistance  
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,  
VGE=0/15V,ꢀIC=30A,ꢀdynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,  
IC=30A,ꢀRGon=13Ω,ꢀRGoff=13Ω,ꢀdynamicꢀtest  
circuit in Figure E)  
15  
1E+4  
1000  
100  
10  
VCCꢀ=ꢀ130V  
VCCꢀ=ꢀ520V  
14  
13  
12  
11  
10  
9
Cies  
Coes  
Cres  
8
7
6
5
4
3
2
1
0
1
0
20  
40  
60  
80  
100  
120  
0
3
6
9
12 15 18 21 24 27 30  
QG,ꢀGATEꢀCHARGEꢀ[nC]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 15. Typicalꢀgateꢀcharge  
(IC=30A)  
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof  
collector-emitterꢀvoltage  
(VGE=0V,ꢀf=1MHz)  
10  
Rev.ꢀ2.1,ꢀꢀ2015-12-22  
IHW30N65R5  
ResonantꢀSwitchingꢀSeries  
1
1
D = 0.5  
D = 0.5  
0.2  
0.2  
0.1  
0.1  
0.05  
0.05  
0.1  
0.02  
0.02  
0.01  
0.01  
0.1  
single pulse  
single pulse  
i:  
1
2
3
4
5
i:  
1
2
3
4
5
ri[K/W]: 1.2E-3 0.026208 0.325117 0.273429 0.185068  
ri[K/W]: 1.8E-3 0.265343 0.526929 2.350517 0.280098  
τi[s]:  
5.0E-7 1.7E-5  
1.1E-4  
7.0E-4  
4.5E-3  
τi[s]:  
6.0E-7 6.3E-5  
4.5E-4  
4.8E-3  
0.02441  
0.01  
0.01  
1E-6  
1E-5  
1E-4  
0.001  
0.01  
0.1  
1E-6  
1E-5  
1E-4  
0.001  
0.01  
0.1  
tp,ꢀPULSEꢀWIDTHꢀ[s]  
tp,ꢀPULSEꢀWIDTHꢀ[s]  
Figure 17. IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa  
functionꢀofꢀpulseꢀwidth  
Figure 18. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa  
functionꢀofꢀpulseꢀwidth  
(D=tp/T)  
(D=tp/T)  
200  
4.0  
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ30A  
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ30A  
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ30A  
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ30A  
175  
150  
125  
100  
75  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
50  
25  
0
500  
700  
900  
1100  
1300  
1500  
500  
700  
900  
1100  
1300  
1500  
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
Figure 19. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 20. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa  
ofꢀdiodeꢀcurrentꢀslope  
functionꢀofꢀdiodeꢀcurrentꢀslope  
(VR=400V)  
(VR=400V)  
11  
Rev.ꢀ2.1,ꢀꢀ2015-12-22  
IHW30N65R5  
ResonantꢀSwitchingꢀSeries  
60  
50  
40  
30  
20  
10  
0
0
-500  
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ30A  
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ30A  
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ30A  
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ30A  
-1000  
-1500  
-2000  
-2500  
-3000  
-3500  
-4000  
-4500  
-5000  
500  
700  
900  
1100  
1300  
1500  
500  
700  
900  
1100  
1300  
1500  
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
Figure 21. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa  
functionꢀofꢀdiodeꢀcurrentꢀslope  
(VR=400V)  
Figure 22. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse  
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode  
currentꢀslope  
(VR=400V)  
90  
2.50  
Tvjꢀ=ꢀ25°C  
IFꢀ=ꢀ7A  
Tvjꢀ=ꢀ175°C  
IFꢀ=ꢀ15A  
IFꢀ=ꢀ30A  
80  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
70  
60  
50  
40  
30  
20  
10  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
25  
50  
75  
100  
125  
150  
175  
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 23. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 24. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction  
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature  
12  
Rev.ꢀ2.1,ꢀꢀ2015-12-22  
IHW30N65R5  
ResonantꢀSwitchingꢀSeries  
Package Drawing PG-TO247-3  
13  
Rev.ꢀ2.1,ꢀꢀ2015-12-22  
IHW30N65R5  
ResonantꢀSwitchingꢀSeries  
Testing Conditions  
VGE(t)  
I,V  
90% VGE  
trr = ta + tb  
dIF/dt  
Qrr = Qa + Qb  
a
b
10% VGE  
t
Qa  
Qb  
IC(t)  
dI  
90% IC  
90% IC  
10% IC  
10% IC  
Figure C. Definition of diode switching  
characteristics  
t
VCE(t)  
t
t
td(off)  
tf  
td(on)  
tr  
Figure A.  
VGE(t)  
90% VGE  
Figure D.  
10% VGE  
t
IC(t)  
CC  
2% IC  
t
VCE(t)  
Figure E. Dynamic test circuit  
Parasitic inductance L ,  
parasitic capacitor C ,  
s
s
relief capacitor C ,  
(only for ZVT switching)  
r
t2  
t4  
E
=
VCE x IC x dt  
E
=
VCE x IC x dt  
off  
on  
2% VCE  
t1  
t3  
t
t1  
t2  
t3  
t4  
Figure B.  
14  
Rev.ꢀ2.1,ꢀꢀ2015-12-22  
IHW30N65R5  
ResonantꢀSwitchingꢀSeries  
RevisionꢀHistory  
IHW30N65R5  
Revision:ꢀ2015-12-22,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2015-06-01 Preliminary  
2015-12-22 Final data sheet  
1.1  
2.1  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀInfineonꢀTechnologiesꢀAGꢀ2015.  
AllꢀRightsꢀReserved.  
ImportantꢀNotice  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics  
(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany  
informationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀand  
liabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthird  
party.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀof  
theꢀproductꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀof  
customer’sꢀtechnicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀthe  
completenessꢀofꢀtheꢀproductꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Forꢀfurtherꢀinformationꢀonꢀtheꢀproduct,ꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearest  
InfineonꢀTechnologiesꢀofficeꢀ(www.infineon.com).  
PleaseꢀnoteꢀthatꢀthisꢀproductꢀisꢀnotꢀqualifiedꢀaccordingꢀtoꢀtheꢀAECꢀQ100ꢀorꢀAECꢀQ101ꢀdocumentsꢀofꢀtheꢀAutomotive  
ElectronicsꢀCouncil.  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirementsꢀproductsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion  
pleaseꢀcontactꢀyourꢀnearestꢀInfineonꢀTechnologiesꢀoffice.  
ExceptꢀasꢀotherwiseꢀexplicitlyꢀapprovedꢀbyꢀInfineonꢀTechnologiesꢀinꢀaꢀwrittenꢀdocumentꢀsignedꢀbyꢀauthorized  
representativesꢀofꢀInfineonꢀTechnologies,ꢀInfineonꢀTechnologies’ꢀproductsꢀmayꢀnotꢀbeꢀusedꢀinꢀanyꢀapplicationsꢀwhereꢀa  
failureꢀofꢀtheꢀproductꢀorꢀanyꢀconsequencesꢀofꢀtheꢀuseꢀthereofꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀresultꢀinꢀpersonalꢀinjury.  
15  
Rev.ꢀ2.1,ꢀꢀ2015-12-22  

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